Class 257/493 - With electric field controlling semiconductor layer having a low enough doping level in relationship to its thickness to be fully depleted prior to avalanche breakdown (e.g., RESURF devices)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter wherein the means to increase breakdown voltage
No. of patents: 234
Last issue date: 02/07/2012

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Number	Title	Issue Date
8110889	MOCVD single chamber split process for LED manufacturing In one embodiment a method for fabricating a compound nitride semiconductor device comprising positioning one or more substrates on a susceptor in a processing region of a metal organic chemical vapor deposition (MOCVD) chamber comprising a showerhead, depositing a ...	02/07/2012
7989910	Semiconductor device including a resurf region with forward tapered teeth A semiconductor device includes an n+ type semiconductor substrate 1 and a super junction region that has, on the top of the substrate 1, an n and p type pillar regions 2 and 3 provided alternately. The device also includes, in the top su...	08/02/2011
7851883	Semiconductor device and method of manufacture thereof This invention aims at providing an inexpensive semiconductor device having a parasitic diode and lowering an hfe of a parasitic PNP transistor and a manufacturing method thereof. Such semiconductor device includes a P-type silicon substrate and a gate electrode for...	12/14/2010
7622787	Process for high voltage superjunction termination A method of manufacturing a semiconductor device having an active region and a termination region includes providing a semiconductor substrate having first and second main surfaces opposite to each other. The semiconductor substrate has an active region and a termin...	11/24/2009
7511353	Semiconductor diode and production method suitable therefor A semiconductor diode (30) has an anode (32), a cathode (33) and a semiconductor volume (31) provided between the anode (32) and the cathode (33). An electron mobility and/or hole mobility within a zone (34) of the se...	03/31/2009
7449762	Lateral epitaxial GaN metal insulator semiconductor field effect transistor A Lateral Epitaxial Gallium Nitride metal insulator semiconductor field effect transistor (LEGaN-MISFET) is described that includes a body region including at least one layer formed of Gallium Nitride having a first conductivity type formed on the substrate; a resur...	11/11/2008
7446387	High voltage transistor and methods of manufacturing the same In a HV transistor having a high breakdown voltage and a method of manufacturing the same, a first insulation pattern is formed on a semiconductor substrate by oxidizing a portion of the substrate, and a second insulation pattern is formed such that at least a porti...	11/04/2008
7436025	Termination structures for super junction devices A semiconductor device 10 is provided. A first layer 12 has a first dopant type; a second layer 14 is provided over the first layer 12; and a third layer 16 is provided over the second layer and has the first dopant type. A plurali...	10/14/2008
7436041	Electrostatic discharge protection circuit using a double-triggered silicon controlling rectifier An ESD protection circuit using a double-triggered silicon controller rectifier (SCR). The double-triggered silicon controller rectifier (SCR) includes N+ diffusion areas, P+ diffusion areas, a first N-well region, a second N-well region and a third N-well region fo...	10/14/2008
7427795	Drain-extended MOS transistors and methods for making the same Drain-extended MOS transistors (T1, T2) and semiconductor devices (102) are described, as well as fabrication methods (202) therefor, in which a p-buried layer (130) is formed prior to formation of epitaxial silicon (106) ov...	09/23/2008
7411266	Semiconductor device having trench charge compensation regions and method In one embodiment, a semiconductor device is formed having charge compensation trenches in proximity to channel regions of the device. The charge compensation trenches comprise at least two opposite conductivity type semiconductor layers. A channel connecting region...	08/12/2008
7408234	Semiconductor device and method for manufacturing the same An object of the present invention is to provide a semiconductor device that is able to realize a low on-resistance maintaining a high drain-to-source breakdown voltage, and a method for manufacturing thereof, the present invention including: a supporting substrate;...	08/05/2008
7372111	Semiconductor device with improved breakdown voltage and high current capacity The superjunction semiconductor device includes a drain drift section, which includes a first alternating conductivity type layer formed of first n-type regions and first p-type regions arranged alternately. The device also includes a peripheral section around the d...	05/13/2008
7372104	High voltage CMOS devices A transistor suitable for high-voltage applications is provided. The transistor is formed on a substrate having a deep well of a first conductivity type. A first well of the first conductivity type and a second well of a second conductivity type are formed such that...	05/13/2008
7365402	LDMOS transistor An LDMOS semiconductor transistor structure comprises a substrate having an epitaxial layer of a first conductivity type, a source region extending from a surface of the epitaxial layer of a second conductivity type, a lightly doped drain region within the epitaxial...	04/29/2008
7364994	Method for manufacturing a superjunction device with wide mesas A method of manufacturing a semiconductor device includes providing semiconductor substrate having trenches and mesas. At least one mesa has first and second sidewalls. The method includes angularly implanting a dopant of a second conductivity into the first sidewal...	04/29/2008
7345341	High voltage semiconductor devices and methods for fabricating the same High voltage semiconductor devices and methods for fabricating the same are provided. An exemplary embodiment of a semiconductor device capable of high-voltage operation, comprising a substrate comprising a first well formed therein. A gate stack is formed overlying...	03/18/2008
7335944	High-voltage vertical transistor with a multi-gradient drain doping profile A high-voltage transistor includes first and second trenches that define a mesa in a semiconductor substrate. First and second field plate members are respectively disposed in the first and second trenches, with each of the first and second field plate members being...	02/26/2008
7329583	Method of fabricating isolated semiconductor devices in epi-less substrate An structure for electrically isolating a semiconductor device is formed by implanting dopant into a semiconductor substrate that does not include an epitaxial layer. Following the implant the structure is exposed to a very limited thermal budget so that dopant does...	02/12/2008
7327007	Semiconductor device with high breakdown voltage A technique is provided which allows easy achievement of a semiconductor device with desired breakdown voltage. In a high-potential island region defined by a p impurity region, an n+ impurity region is formed in an n− semiconductor layer, an...	02/05/2008
7326995	Trench MIS device having implanted drain-drift region and thick bottom oxide A trench MIS device is formed in a P-epitaxial layer that overlies an N+ substrate. In one embodiment, the device includes a thick oxide layer at the bottom of the trench and an N-type drain-drift region that extends from the bottom of the trench to the substrate. T...	02/05/2008
7323386	Method of fabricating semiconductor device containing dielectrically isolated PN junction for enhanced breakdown characteristics A semiconductor device includes a field shield region that is doped opposite to the conductivity of the substrate and is bounded laterally by dielectric sidewall spacers and from below by a PN junction. For example, in a trench-gated MOSFET the field shield region m...	01/29/2008
7323424	Semiconductor constructions comprising cerium oxide and titanium oxide The invention includes semiconductor constructions comprising dielectric materials which contain cerium oxide and titanium oxide. The dielectric materials can contain a homogeneous distribution of cerium oxide and titanium oxide, and/or can contain a laminate of cer...	01/29/2008
7315067	Native high-voltage n-channel LDMOSFET in standard logic CMOS A native high-voltage n-channel LDMOSFET includes a p− doped substrate, a first n+ doped region disposed in the p− doped substrate, a source terminal coupled to the first n+ doped region, an n− well disposed in the substrate, a second n+ doped region disposed ...	01/01/2008
7309894	High voltage gate driver integrated circuit including high voltage junction capacitor and high voltage LDMOS transistor There is provided a high voltage gate driver integrated circuit. The high voltage gate driver integrated circuit includes: a high voltage region; a junction termination region surrounding the high voltage region; a low voltage region surrounding the junction termina...	12/18/2007
7304363	Interacting current spreader and junction extender to increase the voltage blocked in the off state of a high power semiconductor device A technique of spreading current flowing in a semiconductor device comprising an electrode, a drift region adjacent to the electrode, a junction termination extension implant region in the drift region, and a current spreader adjacent to the junction termination ext...	12/04/2007
7304347	Method for fabricating a power semiconductor device having a voltage sustaining layer with a terraced trench facilitating formation of floating islands A method is provided for forming a power semiconductor device. The method begins by providing a substrate of a first conductivity type and then forming a voltage sustaining region on the substrate. The voltage sustaining region is formed by depositing an epitaxial l...	12/04/2007
7294886	Power semiconductor device Disclosed is a power semiconductor device, including a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type and a third semiconductor layer of a second conductivity type which are alternately and lateral...	11/13/2007
7291884	Trench MIS device having implanted drain-drift region and thick bottom oxide A trench MIS device is formed in a P-epitaxial layer that overlies an N-epitaxial layer and an N+ substrate. In one embodiment, the device includes a thick oxide layer at the bottom of the trench and an N-type drain-drift region that extends from the bottom of the t...	11/06/2007
7282764	Semiconductor device A semiconductor device having high ruggedness is provided. The distance Wm2 between buried regions, positioned at the bottoms of different base diffusion regions and face each other, is set smaller than the distance Wm1 between buried regions p...	10/16/2007
7279757	Double-sided extended drain field effect transistor A double-sided extended drain field effect transistor that includes a gate terminal overlying a channel region in a substrate. The substrate includes a drain region of a first carrier type that is laterally separated from the channel region by a first RESURF region ...	10/09/2007
7276431	Method of fabricating isolated semiconductor devices in epi-less substrate An structure for electrically isolating a semiconductor device is formed by implanting dopant into a semiconductor substrate that does not include an epitaxial layer. Following the implant the structure is exposed to a very limited thermal budget so that dopant does...	10/02/2007
7276773	Power semiconductor device A power semiconductor device includes second semiconductor layers of a first conductivity type and third semiconductor layers of a second conductivity type alternately disposed on a first semiconductor layer of the first conductivity type. The device further include...	10/02/2007
7262476	Semiconductor device having improved power density An MOS device is formed including a semiconductor layer of a first conductivity type, and source and drain regions of a second conductivity type formed in the semiconductor layer proximate an upper surface of the semiconductor layer. The source and drain regions are...	08/28/2007
7259440	Fast switching diode with low leakage current A fast switching diode includes an n− layer having an upper surface and a lower surface and a first edge and a second edge, the second edge provided on an opposing side of the first edge. A converted region is provided proximate the upper surface of the n− layer...	08/21/2007
7238577	Method of manufacturing self-aligned n and p type stripes for a superjunction device A method is provided for obtaining extremely fine pitch N-type and P-type stripes that form the voltage blocking region of a superjunction power device. The stripes are self-aligned and do not suffer from alignment tolerances. The self-aligned, fine pitch of the alt...	07/03/2007
7235841	Semiconductor device A semiconductor device includes an active region, an alternating conductivity type layer, and an insulation region surrounding the alternating conductivity type layer provided in a periphery section as a voltage withstanding section. The insulation region is made of...	06/26/2007
7234122	Three-dimensional interconnect resistance extraction using variational method A method and apparatus calculate resistance of a three-dimensional conductor system defined by boundary faces. The resistance calculation includes (a) partitioning the three-dimensional shape into a plurality of parallelepipeds, a boundary between two parallelepiped...	06/19/2007
7230310	Super-junction voltage sustaining layer with alternating semiconductor and High-K dielectric regions A semiconductor power device includes a device feature layer, a substrate contact layer and a voltage-sustaining layer between them. The voltage-sustaining layer includes alternating semiconductor and high permittivity dielectric regions, where each region extends f...	06/12/2007
7224023	Semiconductor device and method of manufacturing thereof This invention is characterized in that, a gate electrode 27F formed on a P-type well 3 via a gate oxide film 9, a high-concentration N-type source layer and a high-concentration N-type drain layer 15 respectively formed apart from the ga...	05/29/2007

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Class 257/493 - With electric field controlling semiconductor layer having a low enough doping level in relationship to its thickness to be fully depleted prior to avalanche breakdown (e.g., RESURF devices)