Bizarre Patents
User-operated amusement apparatus for kicking the user's buttocks
An apparatus including a user-operated and controlled apparatus for self-infliction of repetitive blows to the user's buttocks by a plurality of elongated arms bearing flexible extensions that rotate under the user's control.
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| Number | Title | Issue Date |
| 7880260 | Semiconductor device with a semiconductor body and method for its production A semiconductor device includes an active region with a vertical drift path of a first conduction type and with a near-surface lateral well of a second, complementary conduction type. In addition, the semiconductor device has an edge region surrounding the active re... | 02/01/2011 |
| 7709924 | Semiconductor diode structures A semiconductor structure and a method for operating the same. The method includes providing a semiconductor structure. The semiconductor structure includes first, second, third, and fourth doped semiconductor regions. The second doped semiconductor region is in dir... | 05/04/2010 |
| 7683453 | Edge termination region for high-voltage bipolar-CMOS-DMOS integrated circuit devices All low-temperature processes are used to fabricate a variety of semiconductor devices in a substrate the does not include an epitaxial layer. The devices include a non-isolated lateral DMOS, a non-isolated extended drain or drifted MOS device, a lateral trench DMOS... | 03/23/2010 |
| 7675135 | Integrated high voltage power device having an edge termination of enhanced effectiveness Instabilities and related drawbacks that arise when interruptions of a perimetral high voltage ring extension implanted regions (RHV) of a main junction (P_tub 1, (P_tub2, . . . ) of an integrated device must be realized may be effectively prevented. T... | 03/09/2010 |
| 7598585 | Structure for preventing leakage of a semiconductor device A structure for preventing leakage of a semiconductor device is provided. The structure comprises a conductive layer, for shielding the features beneath thereof, located under a conductive line which crosses over a region having high voltage device. The conductive l... | 10/06/2009 |
| 7388266 | Structure for leakage prevention of a high voltage device A structure for preventing leakage of a high voltage device is provided. The structure comprises a conductive layer, for shielding the features beneath thereof, located under a conductive line which crosses over a region having high voltage device. The conductive la... | 06/17/2008 |
| 7385273 | Power semiconductor device A power semiconductor device that includes a plurality of gate structure each having a gate insulation of a first thickness, and a termination region, the termination including a field insulation body surrounding the active region and having a recess that includes a... | 06/10/2008 |
| 7372111 | Semiconductor device with improved breakdown voltage and high current capacity The superjunction semiconductor device includes a drain drift section, which includes a first alternating conductivity type layer formed of first n-type regions and first p-type regions arranged alternately. The device also includes a peripheral section around the d... | 05/13/2008 |
| 7332788 | Semiconductor power device with charge compensation structure and monolithic integrated circuit, and method for fabricating it The invention relates to a semiconductor power device with charge compensation structure and monolithic integrated circuit, and method for fabricating it. In the case of this semiconductor power device, zones (6) in charge compensation cells (27) that ... | 02/19/2008 |
| 7279768 | Semiconductor device for overvoltage protection In a semiconductor device of the present invention, an N-type buried diffusion layer is formed across a substrate and an epitaxial layer. A P-type buried diffusion layer is formed across an upper surface of the N-type buried diffusion layer over a wide range to form... | 10/09/2007 |
| 7276772 | Semiconductor device A semiconductor device, including: a semiconductor substrate of a first conduction type; an active region used as a function-element-forming region on the semiconductor substrate; a low-resistance region of a second conduction type formed on an outermost periphery o... | 10/02/2007 |
| 7205628 | Semiconductor device A semiconductor device, including: a semiconductor substrate of a first conduction type; an active region used as a function-element-forming region on the semiconductor substrate; a low-resistance region of a second conduction type formed on an outermost periphery o... | 04/17/2007 |
| 7193255 | Semiconductor device with floating conducting region placed between device elements Floating conducting regions at floating potentials are placed on a substrate surface between adjacent conducting regions to which predetermined potentials are applied. This makes it possible to block the spread of a depletion layer to the substrate between the condu... | 03/20/2007 |
| 7183610 | Super trench MOSFET including buried source electrode and method of fabricating the same In a trench MOSFET, the lower portion of the trench contains a buried source electrode, which is insulated from the epitaxial layer and semiconductor substrate but in electrical contact with the source region. When the MOSFET is in an “off” condition, the bias o... | 02/27/2007 |
| 7170083 | Bipolar transistor with collector having an epitaxial Si:C region A structure and method where C is incorporated into the collector region of a heterojunction bipolar device by a method which does not include C ion implantation are provided. In the present invention, C is incorporated into the collector by epitaxy in a perimeter t... | 01/30/2007 |
| 7135742 | Insulated gate type semiconductor device and method for fabricating same An insulated gate type semiconductor device comprised of a semiconductor layer serving as an active region isolated from a semiconductor substrate by a substrate isolation insulating film and a T-shaped gate electrode comprised of a trunk-shaped main gate electrode ... | 11/14/2006 |
| 7135718 | Diode device and transistor device A semiconductor device having improved breakdown voltage is provided. A diode device of the present invention includes relay diffusion layers provided between guard ring portions. Therefore, a depletion layer expanded outward from the guard ring portions except the ... | 11/14/2006 |
| 7119379 | Semiconductor device A semiconductor device disclosed herein comprises: a first base region which is of a first conductivity type; a second base region which is of a second conductivity type and which is selectively formed on a major surface of the first base region; a stopper region wh... | 10/10/2006 |
| 7112865 | Diode and method for manufacturing the same A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode layer, a generally ring-like second-conductivity-type ring region formed ... | 09/26/2006 |
| 7092609 | Method to realize fast silicon-on-insulator (SOI) optical device A fast silicon-on-insulator (SOI) waveguide-based optical device enhanced with minority charge carrier lifetime modifiers enables faster modulation speeds in optical attenuators, optical intensity/phase-modulators, and optical switches whose operation principles are... | 08/15/2006 |
| 7049663 | ESD protection device with high voltage and negative voltage tolerance An electrostatic discharge protection device with high voltage and negative voltage tolerance is provided. The electrostatic discharge protection device comprises: a first type substrate; a first type well inside the first type substrate, the first type well being f... | 05/23/2006 |
| 6992362 | Semiconductor with high-voltage components and low-voltage components on a shared die A method and apparatus for increasing a breakdown voltage of a semiconductor device. The semiconductor device is constructed within an epitaxial tub of a first conductivity type formed within a dielectric material and comprises a surface diffusion region of a second... | 01/31/2006 |
| 6943406 | Semiconductor device According to the present invention, there is provided a semiconductor device having, a semiconductor substrate having a surface on which an insulating layer is formed, a first-conductivity-type first semiconductor layer formed on the insulating layer and having a fi... | 09/13/2005 |
| 6943410 | High power vertical semiconductor device A vertical MOS semiconductor device exhibits a high breakdown voltage and low on-resistance, reduces the tradeoff relation between the on-resistance and the breakdown voltage, and realizes high speed switching. The semiconductor device has a breakdown-voltage sustai... | 09/13/2005 |
| 6940145 | Termination structure for a semiconductor device A semiconductor device (e.g. MOSFET or IGBT) comprises active and termination regions (1,2) formed in a semiconductor substrate (4). The substrate (4) has an upper surface and a termination including a trench (12) extending into the subst... | 09/06/2005 |
| 6927141 | Process for forming fast recovery diode with a single large area P/N junction A fast recovery diode has a single large area P/N junction surrounded by a termination region. The anode contact in contact with the central active area extends over the inner periphery of an oxide termination ring and an EQR metal ring extends over the outer periph... | 08/09/2005 |
| 6909142 | Semiconductor device including a channel stop structure and method of manufacturing the same It is an object to obtain a semiconductor device comprising a channel stop structure which is excellent in an effect of stabilizing a breakdown voltage and a method of manufacturing the semiconductor device. A silicon oxide film (2) is formed on an upper surf... | 06/21/2005 |
| 6909298 | Test socket with integral inductor and method of manufacturing using such a test socket A test socket (600) includes first (602) and second (606) test leads and a first electrically conductive member (604). The first test lead is adapted to contact a first external inductor terminal of an integrated circuit (706). The... | 06/21/2005 |
| 6906355 | Semiconductor device A semiconductor device having guard grooves uniformly filled with a semiconductor filler is provided. The four corners of a rectangular ring-shaped guard groove meet at right angles, and outer and inner auxiliary diffusion regions both rounded are connected to the f... | 06/14/2005 |
| 6879023 | Seal ring for integrated circuits The present invention is directed to a seal structure and a method for forming a seal structure for a semiconductor die. An elongate region which is electrically isolated from the remainder of the substrate, such as a well region of a conductivity type opposite that... | 04/12/2005 |
| 6870201 | High voltage resistant edge structure for semiconductor components The invention relates to a high voltage resistant edge structure in the edge region of a semiconductor component which has floating guard rings of the first conductivity type and inter-ring zones of the second conductivity type which are arranged between the floatin... | 03/22/2005 |
| 6815793 | Body of a semiconductor material with a reduced mean free path length A body (1) consisting of a doped semiconductor material with a pn junction (10) and an area (2) of reduced mean free path length (λr) for free charge carriers is disclosed. Said area (2) has sections (21, 22) which succeed each ot... | 11/09/2004 |
| 6787873 | Semiconductor device for providing a noise shield A first guard ring formed by high concentration ion diffusion is established around the transistor formation region of the semiconductor substrate. A second guard ring is established around the first guard ring with a prescribed gap therebetween. A metal film is for... | 09/07/2004 |
| 6770917 | High-voltage diode A high-voltage diode and a method for producing the high-voltage diode involve only three masking steps. Only three masking steps are required due to the use of adjustment structures and of a chipping stopper with an edge passivation containing a-C:H or a-Si. In thi... | 08/03/2004 |
| 6750506 | High-voltage semiconductor device A high-voltage semiconductor device includes: a drain region; a metal electrode electrically connected to the drain region; and electrically floating plate electrodes formed on a field insulating film over a semiconductor regionm. Parts of the metal electrodes are e... | 06/15/2004 |
| 6724063 | Photodiode and photodiode module Besides the central pn-junction and the central electrode, a PD chip has a peripheral pn-junction and a peripheral electrode which do not appear on the sides. The ends of the peripheral pn-junction are covered with a protection layer for preventing self-shortcircuit... | 04/20/2004 |
| 6724042 | Super-junction semiconductor device Disclosed is a semiconductor device facilitating a peripheral portion thereof with a breakdown voltage higher than the breakdown voltage in the drain drift layer without employing a guard ring or field plate. A preferred embodiment includes a drain drift region with... | 04/20/2004 |
| 6693327 | Lateral semiconductor component in thin-film SOI technology A lateral semiconductor element (10) in thin-film SOI technology comprises an insulator layer (14) which rests on a substrate (12) and is buried under a thin silicon film (16), on top of which the source, or anode, contact (18) and the drain, or cathode, ... | 02/17/2004 |
| 6646304 | Universal semiconductor wafer for high-voltage semiconductor components A universal semiconductor wafer for high-voltage semiconductor components includes at least one layer of a first conductivity type which is provided on a semiconductor substrate of the first conductivity type. A plurality of floating semiconductor zones o... | 11/11/2003 |
| 6639270 | Non-volatile memory cell A non-volatile memory cell includes a MOS transistor having a ring arrangement and comprising a floating gate, a center electrode at a center of the ring arrangement and surrounding the floating gate, and at least one peripheral electrode along a peripher... | 10/28/2003 |
