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| Number | Title | Issue Date |
| 8168971 | Pseudomorphic Si/SiGe/Si body device with embedded SiGe source/drain The invention relates to a semiconductor structure and method of manufacturing and more particularly to a CMOS device with at least one embedded SiGe layer in the source/drain region of the PFET, and at least one embedded SiGe layer in the channel region of the NFET... | 05/01/2012 |
| 8089067 | Semiconductor device A self emission silicon emission display is provided at a low price, which contains silicon and oxygen which exist in abundance on the earth as the main component and which can be easily formed by conventional silicon process. A light emission element includes a fir... | 01/03/2012 |
| 8058649 | Thin-film transistor and method of manufacturing the same In one embodiment, a thin-film transistor (TFT) includes a gate electrode, a semiconductor pattern, first and second electrodes and a protective layer. The semiconductor pattern is formed on the gate electrode, and includes a first semiconductor layer deposited at a... | 11/15/2011 |
| 7943929 | Thin film transistor and method of fabricating the same A thin film transistor and method of fabricating the same are provided. The thin film transistor includes: a metal catalyst layer formed on a substrate, and a first capping layer and a second capping layer pattern sequentially formed on the metal catalyst layer. The... | 05/17/2011 |
| 7928436 | Methods for forming germanium-on-insulator semiconductor structures using a porous layer and semiconductor structures formed by these methods A semiconductor structure that includes a monocrystalline germanium-containing layer, preferably substantially pure germanium, a substrate, and a buried insulator layer separating the germanium-containing layer from the substrate. A porous layer, which may be porous... | 04/19/2011 |
| 7923724 | Phase change memory that switches between crystalline phases A phase change memory may transition between two crystalline states. In one embodiment, the phase change material is a chalcogenide which transitions between face centered cubic and hexagonal states. Because these states are more stable, they are less prone to drift... | 04/12/2011 |
| 7897966 | Method for manufacturing flat substrates For avoiding the metallic inner surface of a PECVD reactor to influence thickness uniformity and quality uniformity of a μc-Si layer (19) deposited on a large-surface substrate, (15) before each substrate is single treated at least parts of the addres... | 03/01/2011 |
| 7893433 | Thin films and methods of making them Thin, smooth silicon-containing films are prepared by deposition methods that utilize a silicon containing precursor. In preferred embodiments, the methods result in Si-containing films that are continuous and have a thickness of about 150 Å or less, a surface rou... | 02/22/2011 |
| 7781765 | Mask for crystallizing polysilicon and a method for forming thin film transistor using the mask A mask for forming polysilicon has a first slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while bearing the same width, a second slit region where a plurality of horizontal slit patterns are arranged in the vertical ... | 08/24/2010 |
| 7755085 | Semiconductor device and method for fabricating same A semiconductor device has an IC chip with a thickness of equal to or less than 100 μm and includes a semiconductor substrate. A device forming region is within the depth of approximately equal to or less than 5 μm from a surface of the semiconductor substrate, an... | 07/13/2010 |
| 7745822 | Thin film transistor and thin film transistor substrate including a polycrystalline semiconductor thin film having a large heat capacity part and a small heat capacity part A TFT and the like capable of realizing performances such as a low threshold voltage value, high carrier mobility and a low leak current easily. A TFT consists of a polycrystalline Si film having a small heat capacity part and a large heat capacity part, and the sma... | 06/29/2010 |
| 7728327 | 2-terminal semiconductor device using abrupt metal-insulator transition semiconductor material Provided is a 2-terminal semiconductor device that uses an abrupt MIT semiconductor material layer. The 2-terminal semiconductor device includes a first electrode layer, an abrupt MIT semiconductor organic or inorganic material layer having an energy gap less than 2... | 06/01/2010 |
| 7700947 | Semiconductor device A metallic element is effectively removed from a semiconductor film crystallized by using the metallic element. The concentration distribution of phosphorous or antimony in the depth direction of at least one of a source and a drain of a TFT semiconductor film has: ... | 04/20/2010 |
| 7612372 | Method and system for laser thermal processing of semiconductor devices Methods and systems for performing laser thermal processing (LTP) of semiconductor devices are disclosed. The method includes forming a dielectric cap atop a temperature-sensitive element, and then forming an absorber layer atop the dielectric layer. A switch layer ... | 11/03/2009 |
| 7482627 | Semiconductor device, and method of fabricating the same A crystalline semiconductor film in which the locations and sizes of crystal grains have been controlled, is prepared, and a TFT capable of high speed operation is realized by employing the crystalline semiconductor film as the channel forming region of the TFT. An ... | 01/27/2009 |
| 7439544 | Structure and manufacturing method of an image TFT array The present invention provides a manufacturing method of an image TFT array, which includes providing a substrate including a thin film transistor region, a storage capacitor region, a pad region, and a common electrode region, forming a photoresist layer on the sub... | 10/21/2008 |
| 7436114 | Electronic device including a first workpiece, a second workpiece, and a conductive member substantially directly bonded to the first and second workpieces An electronic device can include a first workpiece, a second workpiece, and a conductive member. The first workpiece can include an electronic component that includes an electrode and an organic layer. The first workpiece can also include a substrate structure lying... | 10/14/2008 |
| 7422634 | Three inch silicon carbide wafer with low warp, bow, and TTV A high quality single crystal wafer of SiC is disclosed. The wafer has a diameter of at least about 3 inches, a warp of less than about 5 μm, a bow less than about 5 μm, and a total thickness variation of less than about 2.0 μm. ... | 09/09/2008 |
| 7394102 | Pulse output circuit, shift register, and display device A circuit is provided which is constituted by TFTs of one conductivity type, and which is capable of outputting signals of a normal amplitude. When an input clock signal CK1 becomes a high level, each of TFTs (101, 103) is turned on to settle at a low ... | 07/01/2008 |
| 7391050 | Phase change memory device with thermal insulating layers A memory device is described an active material configured to be placed in a more or less conductive state by means of appropriate switching processes. The active material is positioned between a material having low thermal conductivity or material layers having low... | 06/24/2008 |
| 7371564 | Apparatus for automatically analyzing genetic and protein materials using photodiodes An apparatus for automatically analyzing genetic and protein materials using photodiodes. The apparatus comprises a computer for controlling the entire operation of the apparatus and analyzing a voltage level from a characteristic detector to analyze states of the g... | 05/13/2008 |
| 7372512 | Liquid crystal display and fabrication method thereof A liquid crystal display employs an on-common storage capacitor which includes a lower storage electrode of a predetermined size provided in the same layer that a signal line is formed, and a pixel electrode provided on the lower storage electrode, and functioning a... | 05/13/2008 |
| 7372073 | Semiconductor thin film, semiconductor device and manufacturing method thereof A semiconductor device includes a substrate having an insulating film on its surface, and ac active layer made of a semiconductive thin film on the substrate surface. The thin film contains a mono-domain region formed of multiple columnar and/or needle-like crystals... | 05/13/2008 |
| 7368331 | Manufacturing method of thin-film transistor, thin-film transistor sheet, and electric circuit A thin-film transistor, a thin-film transistor sheet, an electric circuit, and a manufacturing method thereof are disclosed, the method comprising the steps of forming a semiconductor layer by providing a semiconductive material on a substrate, b) forming an isolati... | 05/06/2008 |
| 7361563 | Methods of fabricating a semiconductor device using a selective epitaxial growth technique Methods of fabricating a semiconductor device using a selective epitaxial growth technique include forming a recess in a semiconductor substrate. The substrate having the recess is loaded into a reaction chamber. A semiconductor source gas and a main etching gas are... | 04/22/2008 |
| 7362784 | Laser irradiation method, laser irradiation apparatus, and semiconductor device An object of the present invention is obtaining a semiconductor film with uniform characteristics by improving irradiation variations of the semiconductor film. The irradiation variations are generated due to scanning while irradiating with a linear laser beam of th... | 04/22/2008 |
| 7358161 | Methods of forming transistor devices associated with semiconductor-on-insulator constructions The invention encompasses a method of forming a semiconductor on-insulator construction. A substrate is provided. The substrate includes a semiconductor-containing layer over an insulative mass. The insulative mass comprises silicon dioxide. A band of material is fo... | 04/15/2008 |
| 7352002 | Semiconductor device including semiconductor thin films having different crystallinity, substrate of the same, and manufacturing method of the same, and liquid crystal display and manufacturing method of the same A method of manufacturing a thin-film semiconductor device substrate includes a step of forming a non-single crystalline semiconductor thin film on a base layer, and an annealing step of irradiating the non-single crystalline semiconductor thin film with an energy b... | 04/01/2008 |
| 7348599 | Semiconductor device and manufacturing method thereof A p channel TFT of a driving circuit has a single drain structure and its n channel TFT, a GOLD structure or an LDD structure. A pixel TFT has the LDD structure. A pixel electrode disposed in a pixel portion is connected to the pixel TFT through a hole bored in at l... | 03/25/2008 |
| 7339188 | Polycrystalline silicon film containing Ni The present invention is related to a polycrystalline silicon film containing Ni which is formed by crystallizing an amorphous silicon layer containing nickel. The present invention includes a polycrystalline silicon film wherein the polycrystalline film contains Ni... | 03/04/2008 |
| 7339205 | Gallium nitride materials and methods associated with the same Semiconductor materials including a gallium nitride material region and methods associated with such structures are provided. The semiconductor structures include a strain-absorbing layer formed within the structure. The strain-absorbing layer may be formed between ... | 03/04/2008 |
| 7326589 | Method for producing a TFA image sensor and one such TFA image sensor The invention relates to a method for producing a TFA image sensor in which a multi-layer arrangement comprising a photo diode matrix is arranged on an ASIC switching circuit provided with electronic circuits for operating the TFA image sensor, such as pixel electro... | 02/05/2008 |
| 7319258 | Semiconductor-on-insulator chip with<100>-oriented transistors A semiconductor-on-insulator device includes a silicon active layer with a crystal direction placed over an insulator layer. The insulator layer is placed onto a substrate with a crystal direction. Transistors oriented on a direction are formed on ... | 01/15/2008 |
| 7310213 | Semiconductor device provided with overheat protection circuit and electronic circuit using the same A overheat protection circuit is formed on the same semiconductor substrate as a power MOS FET is formed on. As the configuration, a first resistor is connected between an input terminal and a gate of the power MOS FET, a second resistor, a temperature sensing eleme... | 12/18/2007 |
| 7300711 | Magnetic tunnel junctions with high tunneling magnetoresistance using non-bcc magnetic materials Magnetic material, which is not normally bcc-structured under ambient conditions, is induced into becoming bcc as a result of its proximity to a suitable templating material, such as a bcc-structured underlayer that is in contact with the magnetic material. The magn... | 11/27/2007 |
| 7273797 | Methods of forming semiconductor-on-insulator constructions The invention encompasses a method of forming a semiconductor-on-insulator construction. A substrate is provided. The substrate includes a semiconductor-containing layer over an insulative mass. The insulative mass comprises silicon dioxide. A band of material is fo... | 09/25/2007 |
| 7262485 | Substrate for growing electro-optical single crystal thin film and method of manufacturing the same A substrate 1 for growing an electro-optical single crystal thin film in which two or more layers of buffer layers 3, 4, and 5 for buffering lattice mismatch between Si and BTO are formed on an Si (001) substrate 2 is provided as a substr... | 08/28/2007 |
| 7262484 | Structure and method for performance improvement in vertical bipolar transistors A method of forming a semiconductor device having two different strains therein is provided. The method includes forming a strain in a first region with a first straining film, and forming a second strain in a second region with a second straining film. Either of th... | 08/28/2007 |
| 7259393 | Device structures for reducing device mismatch due to shallow trench isolation induced oxides stresses A circuit and method are disclosed for reducing device mismatch due to trench isolation related stress. One or more extended active regions are formed on the substrate, wherein the active regions being extended from one or more ends thereof, and one or more operatio... | 08/21/2007 |
| 7259389 | Organic electronic device and method for manufacturing the same An organic electronic device of the present invention includes a substrate, at least two electrodes formed on the substrate, a conductive organic thin film that is formed on the substrate and electrically connects the electrodes, and a coating film for coating at le... | 08/21/2007 |
