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| Number | Title | Issue Date |
| 7629665 | Semiconductor component with a channel stop zone A semiconductor component has a semiconductor body (100) having a basic doping and a first and second side, an inner region (103) arranged between the first and second sides, and an edge region (104) adjacent to the inner region in a lateral dir... | 12/08/2009 |
| 7385273 | Power semiconductor device A power semiconductor device that includes a plurality of gate structure each having a gate insulation of a first thickness, and a termination region, the termination including a field insulation body surrounding the active region and having a recess that includes a... | 06/10/2008 |
| 7326974 | Sensor for measuring a gas concentration or ion concentration A field-effect transistor used as a sensor for measuring a gas or ion concentration utilizes a surface structure such as rings along with surface profiling, for example elevations of the rings and depressions therebetween, to decrease the surface conductivity betwee... | 02/05/2008 |
| 7319057 | Phase change material memory device A lower electrode may be covered by a protective film to reduce the exposure of the lower electrode to subsequent processing steps or the open environment. As a result, materials that may have advantageous properties as lower electrodes may be utilized despite the f... | 01/15/2008 |
| 7294901 | Semiconductor device with improved resurf features including trench isolation structure A p impurity region (3) defines a RESURF isolation region in an n− semiconductor layer (2). A trench isolation structure (8a) and the p impurity region (3) together define a trench isolation region in the n− | 11/13/2007 |
| 7276787 | Silicon chip carrier with conductive through-vias and method for fabricating same A carrier structure and method for fabricating a carrier structure with through-vias each having a conductive structure with an effective coefficient of thermal expansion which is less than or closely matched to that of the substrate, and having an effective elastic... | 10/02/2007 |
| 7259411 | Vertical MOS transistor A vertical MOS transistor has a source region, a channel region, and a drain region that are vertically stacked, and a trench that extends from the top surface of the drain region through the drain region, the channel region, and partially into the source region. Th... | 08/21/2007 |
| 7247925 | Semiconductor device and method for fabricating the same A semiconductor device includes a semiconductor substrate of a first conductive type, a collector layer formed on the semiconductor substrate and made of a first semiconductor being of the first conductive type and having a higher resistance than that of the semicon... | 07/24/2007 |
| 7238976 | Schottky barrier rectifier and method of manufacturing the same A Schottky barrier rectifier, in accordance with embodiments of the present invention, includes a first conductive layer and a semiconductor. The semiconductor includes a first doped region, a second doped region and a plurality of third doped regions. The second do... | 07/03/2007 |
| 7230313 | Voltage divider field plate termination with unequal fixed biasing An integrated circuit includes a die having a device layer. An insulating layer is disposed over the device layer. A die street defines the outermost bounds of the die. A voltage divider network including a plurality of resistive elements derives a plurality of pred... | 06/12/2007 |
| 7193255 | Semiconductor device with floating conducting region placed between device elements Floating conducting regions at floating potentials are placed on a substrate surface between adjacent conducting regions to which predetermined potentials are applied. This makes it possible to block the spread of a depletion layer to the substrate between the condu... | 03/20/2007 |
| 7183626 | Passivation structure with voltage equalizing loops A semiconductor device which includes a passivation structure formed with a conductive strip of resistive material that crosses itself once around the active region of the device to form a first closed loop, a continuous strip that loops around the first closed loop... | 02/27/2007 |
| 7161208 | Trench mosfet with field relief feature A trench MOS-gated semiconductor device that includes field relief regions formed below its base region to improve its breakdown voltage, and method for its manufacturing. ... | 01/09/2007 |
| 7135742 | Insulated gate type semiconductor device and method for fabricating same An insulated gate type semiconductor device comprised of a semiconductor layer serving as an active region isolated from a semiconductor substrate by a substrate isolation insulating film and a T-shaped gate electrode comprised of a trunk-shaped main gate electrode ... | 11/14/2006 |
| 7119415 | Monolithically integrated circuit comprising a thin film resistor, and fabrication method thereof A monolithically integrated circuit comprises a thin film resistor (8) with low resistance and low temperature coefficient; a high frequency lateral power transistor device (9) including gate (17), source (16) and drain (15) region... | 10/10/2006 |
| 7119379 | Semiconductor device A semiconductor device disclosed herein comprises: a first base region which is of a first conductivity type; a second base region which is of a second conductivity type and which is selectively formed on a major surface of the first base region; a stopper region wh... | 10/10/2006 |
| 7109562 | High voltage laterally double-diffused metal oxide semiconductor A high voltage laterally double-diffused metal oxide semiconductor (LDMOS) stricture is characterized as follows: the second source electrode metal layer connected to the first source electrode metal layer protrudes out of a certain length relative to the first sour... | 09/19/2006 |
| 7098495 | Magnetic tunnel junction element structures and methods for fabricating the same Magnetic tunnel junction (“MTJ”) element structures and methods for fabricating MTJ element structures are provided. An MTJ element structure may comprise a crystalline pinned layer, an amorphous fixed layer, and a coupling layer disposed between the crystalline... | 08/29/2006 |
| 7084478 | Load resistor with dummy contact substantially free of charge build up during etching process A semiconductor device with a load resistor is manufactured such that a contact is formed at both ends of the load resistor, and at least one contact is formed between the contacts, in order to prevent impurities from being generated within each contact while the co... | 08/01/2006 |
| 6946717 | High voltage semiconductor device A compound semiconductor device is comprising a compound semiconductor substrate (219) having a ground plane (205); an active element (201) disposed on the substrate; a passive element (211) disposed on the substrate and electrically coup... | 09/20/2005 |
| 6943406 | Semiconductor device According to the present invention, there is provided a semiconductor device having, a semiconductor substrate having a surface on which an insulating layer is formed, a first-conductivity-type first semiconductor layer formed on the insulating layer and having a fi... | 09/13/2005 |
| 6927141 | Process for forming fast recovery diode with a single large area P/N junction A fast recovery diode has a single large area P/N junction surrounded by a termination region. The anode contact in contact with the central active area extends over the inner periphery of an oxide termination ring and an EQR metal ring extends over the outer periph... | 08/09/2005 |
| 6903421 | Isolated high-voltage LDMOS transistor having a split well structure The isolated high-voltage LDMOS transistor according to the present invention includes a split N-well and P-well in the extended drain region. The P-well is split in the extended drain region of the N-well to form a split junction-field in the N-well. The split N-we... | 06/07/2005 |
| 6879005 | High withstand voltage semiconductor device A high withstand voltage semiconductor device, comprises: a substrate, a semiconductor layer formed on an upper surface of the substrate, a lateral semiconductor device formed in a surface region of the semiconductor layer and having a first principal electrode in i... | 04/12/2005 |
| 6873028 | Surge current chip resistor A chip resistor comprising a substrate having opposite parallel symmetrical first and second surfaces, a central longitudinal plane of symmetry, separate and spaced first and second resistive layers on the first and second surfaces. The resistive layers are electric... | 03/29/2005 |
| 6864521 | Method to control silver concentration in a resistance variable memory element A method for controlling silver doping of a chalcogenide glass in a resistance variable memory element is disclosed herein. The method includes forming a thin metal containing layer having a thickness of less than about 250 Angstroms over a second chalcogenide glass... | 03/08/2005 |
| 6831312 | Amorphous alloys for magnetic devices An amorphous layer of a cobalt iron-based (CoFe-based) magnetic alloy suitable for use in magnetoelectronic devices is disclosed. In the most preferred embodiments of the present invention, at least one amorphous layer is provided in an MTJ stack to increase the smo... | 12/14/2004 |
| 6750506 | High-voltage semiconductor device A high-voltage semiconductor device includes: a drain region; a metal electrode electrically connected to the drain region; and electrically floating plate electrodes formed on a field insulating film over a semiconductor regionm. Parts of the metal electrodes are e... | 06/15/2004 |
| 6724021 | Semiconductor devices and their peripheral termination A semiconductor device, such as a power MOSFET, Schottky rectifier or p-n rectifier, has a voltage-sustaining zone (20) between a first (21, 23, 31a) and second (22) device regions adjacent to respective first and second opposite surfaces... | 04/20/2004 |
| 6700175 | Vertical semiconductor device having alternating conductivity semiconductor regions There is provided a method of manufacturing a vertical semiconductor device including a structural section in which an n- -type semiconductor region and a p- -type semiconductor region are arranged alternately without filling trenche... | 03/02/2004 |
| 6680515 | Lateral high voltage transistor having spiral field plate and graded concentration doping A lateral high voltage transistor device is disclosed. The transistor includes a gate, a drain, and a source. The drain is located apart from the gate to form an intermediate drift region. The drift region has variable dopant concentration between the dra... | 01/20/2004 |
| 6624472 | Semiconductor device with voltage sustaining zone A semiconductor body has first and second opposed major surfaces. A first region meets the first major surface and at least one second region meets the second major surface. The semiconductor body provides a voltage-sustaining zone between the first and s... | 09/23/2003 |
| 6614088 | Breakdown improvement method and sturcture for lateral DMOS device In a lateral DMOS device 10 breakdown voltage is controlled by a voltage divider 50 coupled at opposite ends to the source 18 and drain 19. The divider node N1 between first and second resistive elements R1, R2 is connected to a second level conductive sh... | 09/02/2003 |
| 6608351 | Semiconductor device comprising a high-voltage circuit element The performance of high-voltage devices is often influenced by charge-creep effects in the package. In order to avoid the resultant degradation, a bleeder may be used between the device and the package. However, it has been found in practice that the use ... | 08/19/2003 |
| 6603185 | Voltage withstanding structure for a semiconductor device A semiconductor device comprising: a semiconductor substrate, a dielectric film formed on the semiconductor substrate, a first electrode and a second electrode separated from each other on the dielectric film; a spiral thin film layer having both ends con... | 08/05/2003 |
| 6586798 | High voltage MOS-gated power device MOS-gated power device including a plurality of elementary functional units, each elementary functional unit including a body region of a first conductivity type formed in a semiconductor material layer of a second conductivity type. A plurality of doped ... | 07/01/2003 |
| 6525390 | MIS semiconductor device with low on resistance and high breakdown voltage The invention provides a semiconductor device, manufactured with low manufacturing costs, that prevents the breakdown voltage from lowering. The semiconductor device according to the invention includes a p-type highly resistive semiconductor substrate; an... | 02/25/2003 |
| 6492689 | Semiconductor device switching regulator used as a DC regulated power supply In a driving power IC including a starter circuit comprising a main-switch (MS) transistor, a starter switch (SS) for starting the MS transistor and a start resistor (or a resistor element) SR, the start resistor is created on a field insulation film. In ... | 12/10/2002 |
| 6462377 | Insulated gate field effect device A semiconductor body (10) has first and second opposed major surfaces (10a and 10b), with a first region (11) of one conductivity type and a plurality of body regions (32) of the opposite conductivity type each forming a pn junction with the first region ... | 10/08/2002 |
| 6452245 | Semiconductor device The present invention provides a semiconductor device capable of improving a withstand voltage for a wire placed in the neighborhood of a contact. When the direction in which a wiring layer extends in the direction of a plane as viewed from the top of a s... | 09/17/2002 |
