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"That the automobile has practically reached the limit of its development is suggested by the fact that during the past year no improvements of a radical nature have been introduced."
Scientific American ; Jan. 2 edition, 1909
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| Number | Title | Issue Date |
| 8039919 | Memory devices having a carbon nanotube In a memory device having a carbon nanotube and a method of manufacturing the same, the memory device includes a lower electrode, an upper electrode having a first void exposing a sidewall of a diode therein, an insulating interlayer pattern having a second void exp... | 10/18/2011 |
| 7436039 | Gallium nitride semiconductor device A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n− doped GaN layer having a thickness greater than one micron disposed on said n+ GaN laye... | 10/14/2008 |
| 7388272 | Chip package and producing method thereof A chip package including a carrier, a chip, a stiffener and a molding compound is provided. A producing method of the chip package includes the steps of disposing a bottom surface of the chip on the carrier; covering an edge of a top surface of the chip with the sti... | 06/17/2008 |
| 7388271 | Schottky diode with minimal vertical current flow A method of forming a rectifying diode. The method comprises providing a first semiconductor region of a first conductivity type and having a first dopant concentration and forming a second semiconductor region in the first semiconductor region. The second semicondu... | 06/17/2008 |
| 7368762 | Heterojunction photodiode The present invention provides a heterojunction photodiode which includes a pn or Schottky-barrier junction formed in a first material region having a bandgap energy Eg1. When reverse-biased, the junction creates a depletion region which expands towards a... | 05/06/2008 |
| 7345350 | Process and integration scheme for fabricating conductive components, through-vias and semiconductor components including conductive through-wafer vias A method for forming a conductive via in a semiconductor component is disclosed. The method includes providing a substrate having a first surface and an opposing, second surface. At least one hole is formed in the substrate extending between the first surface and th... | 03/18/2008 |
| 7326995 | Trench MIS device having implanted drain-drift region and thick bottom oxide A trench MIS device is formed in a P-epitaxial layer that overlies an N+ substrate. In one embodiment, the device includes a thick oxide layer at the bottom of the trench and an N-type drain-drift region that extends from the bottom of the trench to the substrate. T... | 02/05/2008 |
| 7291884 | Trench MIS device having implanted drain-drift region and thick bottom oxide A trench MIS device is formed in a P-epitaxial layer that overlies an N-epitaxial layer and an N+ substrate. In one embodiment, the device includes a thick oxide layer at the bottom of the trench and an N-type drain-drift region that extends from the bottom of the t... | 11/06/2007 |
| 7274082 | Chemical sensor using chemically induced electron-hole production at a schottky barrier Electron-hole production at a Schottky barrier has recently been observed experimentally as a result of chemical processes. This conversion of chemical energy to electronic energy may serve as a basic link between chemistry and electronics and offers the potential f... | 09/25/2007 |
| 7271403 | Isolating phase change memory devices A phase change memory may be made using an isolation diode in the form of a Schottky diode between a memory cell and a word line. The use of Schottky diode isolation devices may make the memory more scaleable in some embodiments. ... | 09/18/2007 |
| 7262434 | Semiconductor device with a silicon carbide substrate and ohmic metal layer A semiconductor device provided with a silicon carbide semiconductor substrate, and an ohmic metal layer joined to one surface of the silicon carbide semiconductor substrate in an ohmic contact and composed of a metal material whose silicide formation free energy an... | 08/28/2007 |
| 7211824 | Organic semiconductor diode The present invention relates to organic semiconductor diodes, in particular, to the diodes with nonlinear current-voltage characteristics, which are used for power switching, rectifying variable signals, and frequency mixing. The organic semiconductor diode with th... | 05/01/2007 |
| 7193291 | Organic Schottky diode An organic Schottky diode includes a polycrystalline organic semiconductor layer with a rectifying contact on one side of the layer. An amorphous doped semiconductor layer is placed on the other side of the polycrystalline organic semiconductor layer, and it acts as... | 03/20/2007 |
| 7176129 | Methods of fabricating highly conductive regions in semiconductor substrates for radio frequency applications Methods of fabricating highly conductive regions in semiconductor substrates for radio frequency applications are used to fabricate two structures: (1) a first structure includes porous Si (silicon) regions extending throughout the thickness of an Si substrate that ... | 02/13/2007 |
| 7176537 | High performance CMOS with metal-gate and Schottky source/drain A semiconductor device having a metal/metal silicide gate and a Schottky source/drain and a method of forming the same are provided. The semiconductor device includes a gate dielectric overlying a semiconductor substrate, a metal or metal silicide gate electrode hav... | 02/13/2007 |
| 7148119 | Process for production of semiconductor substrate A process for producing a semiconductor substrate is provided which comprises steps of forming a porous layer on a first substrate, forming a nonporous monocrystalline semiconductor layer on the porous layer of the first substrate, bonding the nonporous monocrystall... | 12/12/2006 |
| 7145176 | Active matrix display device An active matrix display device using a thin film transistor as a switching element in the displaying portion or driving portion is characterized in that said thin film transistor includes an insulating substrate on which a gate electrode, a gate insulating film, a ... | 12/05/2006 |
| 7141861 | Semiconductor device and manufacturing method there A problem in related art according to which an increase in leak current cannot be avoided in order to obtain a low forward voltage VF as forward voltage VF and reverse leak current IR characteristics of a Schottky barrier diode are in a trade-off relationship is her... | 11/28/2006 |
| 7119361 | Luminescence stabilization of anodically oxidized porous silicon layers A porous silicon structure is stabilized by anodically oxidizing the structure and then subjecting it to chemical functionalization to protect non-oxidized surface regions, preferably in the presence of 1-decene under thermal conditions. This process creates a prote... | 10/10/2006 |
| 7105907 | Gallium nitride compound semiconductor device having schottky contact A buffer layer, an undoped gallium nitride layer, and an n-type gallium nitride active layer are formed on a sapphire substrate. Ohmic contacts and a Schottky contact are then formed on the n-type gallium nitride active layer as a source contact, a drain contact and... | 09/12/2006 |
| 7084475 | Lateral conduction Schottky diode with plural mesas A lateral conduction Schottky diode includes multiple mesa regions upon which Schottky contacts are formed and which are at least separated by ohmic contacts to reduce the current path length and reduce current crowding in the Schottky contact, thereby reducing the ... | 08/01/2006 |
| 7084423 | Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions An electrical device in which an interface layer is disposed between and in contact with a metal and a Si-based semiconductor, the interface layer being of a thickness effective to depin of the Fermi level of the semiconductor while still permitting current to flow ... | 08/01/2006 |
| 7075002 | Thin-film photoelectric conversion device and a method of manufacturing the same A method of manufacturing a thin-film solar cell, comprising the steps of: forming an amorphous silicon film on a substrate; placing a metal element that accelerates the crystallization of silicon in contact with the surface of the amorphous silicon film; subjecting... | 07/11/2006 |
| 7071526 | Semiconductor device having Schottky junction electrode A GaN semiconductor device with improved heat resistance of the Schottky junction electrode and excellent power performance and reliability is provided. In this semiconductor device having a Schottky gate electrode 17 which is in contact with an AlGaN electro... | 07/04/2006 |
| 7071525 | Merged P-i-N schottky structure A Merged P-i-N Schottky device in which the oppositely doped diffusions extend to a depth and have been spaced apart such that the device is capable of absorbing a reverse avalanche energy comparable to a Fast Recovery Epitaxial Diode having a comparatively deeper o... | 07/04/2006 |
| 7061067 | Schottky barrier diode To reduce a reverse leakage current in a Schottky barrier diode with achieving a lower forward voltage Vf and a smaller capacitance than in the related art, a Schottky barrier diode includes a semiconductor layer of a first conductivity type, a first electrode which... | 06/13/2006 |
| 7053417 | Semiconductor led device and producing method The present invention provides a semiconductor device with InxGa1-xN crystal passivation layer and manufacturing method thereof which effectively blocks the leakage current between the surface & boundary of a device and a pn-junction boundary, and enhances the light... | 05/30/2006 |
| 7023030 | MISFET A metal insulator semiconductor field effect transistor (MISFET) is disclosed comprising a source layer being made with a material having a source band-gap (EG2) and a source mid-gap value (EGM2), the source layer having a source Fermi-Level (EF2 | 04/04/2006 |
| 7022597 | Method for manufacturing gallium nitride based transparent conductive oxidized film ohmic electrodes A method for manufacturing gallium nitride based transparent conductive oxidized film ohmic electrodes includes forming a transparent conductive film on a GaN layer, forming a transparent conductive hetero-junction of opposing electrical characteristics on a transpa... | 04/04/2006 |
| 6972438 | Light emitting diode with porous SiC substrate and method for fabricating A method and apparatus for forming a porous layer on the surface of a semiconductor material wherein an electrolyte is provided and is placed in contact with one or more surfaces of a layer of semiconductor material. The electrolyte is heated and a bias is introduce... | 12/06/2005 |
| 6969900 | Semiconductor diode capable of detecting hydrogen at high temperatures A semiconductor diode with hydrogen detection capability includes a semiconductor substrate, a doped semiconductor active layer formed on the substrate and made from a compound having the formula XYZ, in which X is a Group III element, Y is another Group III element... | 11/29/2005 |
| 6960782 | Electronic devices with fullerene layers Described is an electronic device comprising a junction formed between a first fullerene layer having a first doping concentration and a second fullerene layer having a second doping concentration different from the first doping concentration. The first doping conce... | 11/01/2005 |
| 6960482 | Method of fabricating nitride semiconductor and method of fabricating semiconductor device A method of fabricating a nitride semiconductor includes the steps of forming a nitride semiconductor doped with a p-type impurity, treating the surface of the nitride semiconductor in an atmosphere containing active oxygen to remove carbon remaining on the surface ... | 11/01/2005 |
| 6949401 | Semiconductor component and method for producing the same A method for producing a semiconductor component with adjacent Schottky (5) and pn (9) junctions positions in a drift area (2, 10) of a semiconductor material. According to the method, a silicon carbide substrate doped with a first doping materi... | 09/27/2005 |
| 6949806 | Electrostatic discharge protection structure for deep sub-micron gate oxide The present disclosure provides a deep submicron electrostatic discharge (ESD) protection structure for a deep submicron integrated circuit (IC) and a method for forming such a structure. The structure includes at least two electrodes separated by a dielectric mater... | 09/27/2005 |
| 6946305 | Apparatus for evaluating amount of charge, method for fabricating the same, and method for evaluating amount of charge A wafer for charge amount evaluation having a silicon substrate and p-type regions sandwiched between a first silicon oxide film and a SA-NSG film and surrounded by an undoped silicon film is prepared and subjected to a target process for which an amount of charge i... | 09/20/2005 |
| 6936906 | Integration of barrier layer and seed layer The present invention generally relates to filling of a feature by depositing a barrier layer, depositing a seed layer over the barrier layer, and depositing a conductive layer over the seed layer. In one embodiment, the seed layer comprises a copper alloy seed laye... | 08/30/2005 |
| 6936840 | Phase-change memory cell and method of fabricating the phase-change memory cell A memory cell and method of fabricating the memory cell includes an insulating layer formed on a first electrode layer, the insulating layer having a first opening, a stencil layer formed on the insulating layer, and having a second opening formed in an area of the ... | 08/30/2005 |
| 6885077 | Schottky diode A Schottky diode has a Schottky junction formed by a thin metal layer and/or metal silicide layer at the top side of a doped well in a semiconductor body or substrate. In contrast to the fabrication of low-impedance contacts on CMOS wells, a metal, to be precise tit... | 04/26/2005 |
| 6846731 | Schottky diode with silver layer contacting the ZnO and MgxZn1-xO films In the present invention, there is provided semiconductor devices such as a Schottky UV photodetector fabricated on n-type ZnO and MgxZn1-xO epitaxial films. The ZnO and MgxZn1-xO films are grown on R-plane sapphire substr... | 01/25/2005 |
