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Behavior Modification Wristwatch
A wristwatch including a watch band and a watch body having an octagon shaped perimeter and being red in color and having the word STOP thereon to resemble a stop sign.
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| Number | Title | Issue Date |
| 8115270 | Electrostatic discharge protection method and device for semiconductor device including an electrostatic discharge protection element providing a discharge path of a surge current An electrostatic discharge protection device includes a first bipolar transistor having a collector terminal connected with a first power supply terminal, an emitter terminal connected with the input/output terminal, and a base terminal connected with a second power... | 02/14/2012 |
| 7808069 | Robust structure for HVPW Schottky diode A high-voltage Schottky diode including a deep P-well having a first width is formed on the semiconductor substrate. A doped P-well is disposed over the deep P-well and has a second width that is less than the width of the deep P-well. An M-type guard ring is formed... | 10/05/2010 |
| 7781859 | Schottky diode structures having deep wells for improving breakdown voltages An integrated circuit structure includes a semiconductor substrate; a well region of a first conductivity type over the semiconductor substrate; a metal-containing layer on the well region, wherein the metal-containing layer and the well region form a Schottky barri... | 08/24/2010 |
| 7741693 | Method for integrating trench MOS Schottky barrier devices into integrated circuits and related semiconductor devices Trenches are formed in a semiconductor substrate, where the trenches include an outer trench and multiple inner trenches within the outer trench. A metal-oxide semiconductor (MOS) device and a trench MOS Schottky barrier (TMBS) device are also formed in the semicond... | 06/22/2010 |
| 7737523 | Semiconductor device In a semiconductor device of the present invention, a protection diode for protecting a device is formed on an epitaxial layer formed on a substrate. A Schottky barrier metal layer is formed on a surface of the epitaxial layer and a P-type diffusion layer is formed ... | 06/15/2010 |
| 7728403 | Semiconductor device A semiconductor device of unipolar type has Schottky-contacts (6) laterally separated by regions in the form of additional layers (7, 7ā³) of semiconductor material on top of a drift layer (3). Said additional layers being doped according to a ... | 06/01/2010 |
| 7692262 | Rectifying and protection diode A vertical rectifying and protection power diode, formed in a lightly-doped semiconductor layer of a first conductivity type, resting on a heavily-doped substrate of the first conductivity type, having a first ring-shaped region, of the first conductivity type more ... | 04/06/2010 |
| 7656003 | Electrical stress protection apparatus and method of manufacture In various embodiments, circuits and semiconductor devices and structures and methods to manufacture these structures and devices are disclosed. In one embodiment, a bidirectional polarity, voltage transient protection device is disclosed. The voltage transient prot... | 02/02/2010 |
| 7466005 | Recessed termination for trench schottky device without junction curvature A trench type Schottky device has a guard ring diffusion of constant depth between the outermost of an active trench and an outer surrounding termination trench. The junction curvature of the guard ring diffusion is suppressed or cut out by the trenches. ... | 12/16/2008 |
| 7436039 | Gallium nitride semiconductor device A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an nā doped GaN layer having a thickness greater than one micron disposed on said n+ GaN laye... | 10/14/2008 |
| 7417265 | Schottky diode structure with enhanced breakdown voltage and method of manufacture In one embodiment, a Schottky diode structure comprises a Schottky barrier layer in contact with a semiconductor material through a Schottky contact opening. A conductive ring is formed adjacent the Schottky contact opening and is separated from the semiconductor ma... | 08/26/2008 |
| 7409660 | Method and end cell library for avoiding substrate noise in an integrated circuit A method of avoiding substrate noise in an integrated circuit includes steps of receiving as input an integrated circuit design that includes at least a portion of a block for placement and routing on a substrate and an outer boundary of the block. An end cell is se... | 08/05/2008 |
| 7408206 | Method and structure for charge dissipation in integrated circuits Methods and structures and methods of designing structures for charge dissipation in an integrated circuit on an SOI substrate. A first structure includes a charge dissipation ring around a periphery of the integrated circuit chip and one or more charge dissipation ... | 08/05/2008 |
| 7397103 | Semiconductor with damage detection circuitry Disclosed herein are novel damage detection circuitries implemented on the periphery of a semiconductor device. The circuitries disclosed herein enable the easy identification of cracks and deformation, and other types of damage that commonly occur during test and a... | 07/08/2008 |
| 7394137 | Semiconductor device A semiconductor device including: a semiconductor layer; a gate insulating layer; a gate electrode; a channel region; a source region and a drain region; a guard ring region; an offset insulating layer; a first interlayer dielectric; a first shield layer formed abov... | 07/01/2008 |
| 7391093 | Semiconductor device with a guard-ring structure and a field plate formed of polycrystalline silicon film embedded in an insulating film A semiconductor device has a semiconductor device chip with upper and lower terminal electrodes, and upper and lower frames bonded to the upper and lower terminal electrodes, respectively, with solder material, wherein the semiconductor device chip includes: a semic... | 06/24/2008 |
| 7388272 | Chip package and producing method thereof A chip package including a carrier, a chip, a stiffener and a molding compound is provided. A producing method of the chip package includes the steps of disposing a bottom surface of the chip on the carrier; covering an edge of a top surface of the chip with the sti... | 06/17/2008 |
| 7372159 | Semiconductor device A glass-sealed type semiconductor device has Dumet electrodes, a glass sealing member, and a semiconductor element tightly sealed in a cavity constituted by the Dumet electrodes and the glass sealing member. The semiconductor element is constituted by a Schottky bar... | 05/13/2008 |
| 7364978 | Method of fabricating semiconductor device There is provided a method of fabricating semiconductor devices that allows ion implantation to be performed at high temperature with ions accelerated with high energy to help to introduce dopant in a semiconductor substrate, in particular a SiC semiconductor substr... | 04/29/2008 |
| 7339243 | Isolating substrate noise by forming semi-insulating regions An integrated circuit structure for isolating substrate noise and a method of forming the same are provided. In the preferred embodiment of the present invention, a semi-insulating region is formed using proton bombardment in a substrate between a first circuit regi... | 03/04/2008 |
| 7307329 | Electronic device with guard ring An electronic device includes a substrate, an insulating layer arranged on the substrate, the insulating layer having an opening in an area of the surface of the substrate, an active layer arranged within the opening on the surface of the substrate, the active layer... | 12/11/2007 |
| 7282778 | Chemical sensor using chemically induced electron-hole production at a Schottky barrier Electron-hole production at a Schottky barrier has recently been observed experimentally as a result of chemical processes. This conversion of chemical energy to electronic energy may serve as a basic link between chemistry and electronics and offers the potential f... | 10/16/2007 |
| 7276743 | Retaining ring with conductive portion A retaining ring for use with electrochemical mechanical processing is described. The retaining ring has a generally annular body formed with a conductive portion and a non-conductive portion. The non-conductive portion contacts the substrate during polishing. The c... | 10/02/2007 |
| 7276771 | Diode and method for manufacturing the same A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode layer, a generally ring-like second-conductivity-type ring region formed ... | 10/02/2007 |
| 7274077 | Trench transistor A trench transistor has a cell array, in which at least one cell array trench (2) is provided, and an edge structure framing the cell array. An edge trench (15) spaced apart from the cell array trenches (2) is provided in the edge structure.... | 09/25/2007 |
| 7265436 | Non-repeated and non-uniform width seal ring structure A method of forming an improved seal ring structure is described. A continuous metal seal ring is formed along a perimeter of a die wherein the metal seal ring is parallel to the edges of the die and sloped at the corner of the die so as not to have a sharp corner a... | 09/04/2007 |
| 7247888 | Film forming ring and method of manufacturing semiconductor device There is here disclosed a film forming ring including a ring main body being made of an insulating material and formed in an annular shape along an edge of a substrate on which a film forming process by using a material gas in a plasma state is applied, and an inner... | 07/24/2007 |
| 7238976 | Schottky barrier rectifier and method of manufacturing the same A Schottky barrier rectifier, in accordance with embodiments of the present invention, includes a first conductive layer and a semiconductor. The semiconductor includes a first doped region, a second doped region and a plurality of third doped regions. The second do... | 07/03/2007 |
| 7229866 | Non-activated guard ring for semiconductor devices A guard ring is formed in a semiconductor region that is part of a Schottky junction or Schottky diode. The guard ring is formed by ion implantation into the semiconductor contact layer without completely annealing the semiconductor contact layer to form a high resi... | 06/12/2007 |
| 7196397 | Termination design with multiple spiral trench rings A semiconductor device having a termination structure, which includes at least one spiral resistor disposed within a spiral trench and connected between two power poles of the device. ... | 03/27/2007 |
| 7187054 | Diode and method for manufacturing the same A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode layer, a generally ring-like second-conductivity-type ring region formed ... | 03/06/2007 |
| 7145211 | Seal ring for mixed circuitry semiconductor devices In mixed-component, mixed-signal, semiconductor devices, selective seal ring isolation from the substrate and its electrical potential is provided in order to segregate noise sensitive circuitry from electrical noise generated by electrically noisy circuitry. Approp... | 12/05/2006 |
| 7141860 | LDMOS transistor An LDMOS transistor has a Schottky diode inserted at the center of a doped region of the LDMOS transistor. A Typical LDMOS transistor has a drift region in the center. In this case a Schottky diode is inserted at the center of this drift region which has the effect ... | 11/28/2006 |
| 7135718 | Diode device and transistor device A semiconductor device having improved breakdown voltage is provided. A diode device of the present invention includes relay diffusion layers provided between guard ring portions. Therefore, a depletion layer expanded outward from the guard ring portions except the ... | 11/14/2006 |
| 7129565 | Semiconductor device, method of manufacturing the same, and phase shift mask A main wall part is provided so as to surround an integrated circuit part. A sub-wall part which is in āLā shape is provided between each corner of the main wall part and the integrated circuit part. Therefore, even if the stress is concentrated due to heat trea... | 10/31/2006 |
| 7129558 | Chip-scale schottky device A chip-scale schottky package which has at least one cathode electrode and at least one anode electrode disposed on only one major surface of a die, and solder bumps connected to the electrode for surface mounting of the package on a circuit board. ... | 10/31/2006 |
| 7118970 | Methods of fabricating silicon carbide devices with hybrid well regions MOS channel devices and methods of fabricating such devices having a hybrid channel are provided. Exemplary devices include vertical power MOSFETs that include a hybrid well region of silicon carbide and methods of fabricating such devices are provided. The hybrid w... | 10/10/2006 |
| 7112865 | Diode and method for manufacturing the same A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode layer, a generally ring-like second-conductivity-type ring region formed ... | 09/26/2006 |
| 7109100 | Semiconductor device and method for manufacturing semiconductor device To provide a semiconductor device able to be made uniform in diffusion depth of the impurity in a diffusion layer by a single diffusion and to give the desired threshold voltage and improved in yield and a method of producing the same. The device has a channel layer... | 09/19/2006 |
| 7098521 | Reduced guard ring in schottky barrier diode structure Schottky barrier diodes use a dielectric separation region to bound an active region. The dielectric separation region permits the elimination of a guard ring in at least one dimension. Further, using a dielectric separation region in an active portion of the integr... | 08/29/2006 |
