Bizarre Patents
Hands free towel carrying system
A hands free towel carrying system for coupling a towel to a user to prevent loss, theft or contamination.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7973381 | Thick field oxide termination for trench schottky device A schottky diode of the trench variety which includes a trench termination having a thick insulation layer that is thicker than the insulation layer inside the trenches in its active region. ... | 07/05/2011 |
| 7923804 | Edge termination with improved breakdown voltage A MOSFET switch which has a low surface electric field at an edge termination area, and also has increased breakdown voltage. The MOSFET switch has a new edge termination structure employing an N-P-N sandwich structure. The MOSFET switch also has a polysilicon field... | 04/12/2011 |
| 7821095 | Method of forming a Schottky diode and structure therefor In one embodiment, a Schottky diode is formed on a doped region having a thickness less than about eighteen microns. ... | 10/26/2010 |
| 7498651 | Junction termination structures for wide-bandgap power devices Disclosed are a variety of junction termination structures for high voltage semiconductor power devices. The structures are specifically aimed at providing a high breakdown voltage while being constructed with a minimal number of process steps. The combination of an... | 03/03/2009 |
| 7388272 | Chip package and producing method thereof A chip package including a carrier, a chip, a stiffener and a molding compound is provided. A producing method of the chip package includes the steps of disposing a bottom surface of the chip on the carrier; covering an edge of a top surface of the chip with the sti... | 06/17/2008 |
| 7350160 | Method of displaying a guard ring within an integrated circuit The invention displays a guard ring within an integrated circuit design by determining positions of the logic devices within the integrated circuit design, incorporating the guard ring into the integrated circuit design, and displaying the logic devices and the guar... | 03/25/2008 |
| 7323402 | Trench Schottky barrier diode with differential oxide thickness A fabrication process for a trench Schottky diode with differential oxide thickness within the trenches includes forming a first nitride layer on a substrate surface and subsequently forming a plurality of trenches in the substrate including, possibly, a termination... | 01/29/2008 |
| 7307329 | Electronic device with guard ring An electronic device includes a substrate, an insulating layer arranged on the substrate, the insulating layer having an opening in an area of the surface of the substrate, an active layer arranged within the opening on the surface of the substrate, the active layer... | 12/11/2007 |
| 7276440 | Method of fabrication of a die oxide ring In accordance with the objectives of the invention a new design and method for the implementation thereof is provided in the form of an “oxide ring”. A conventional die is provided with a guard ring or sealing ring, which surrounds and isolates the active surfac... | 10/02/2007 |
| 7265436 | Non-repeated and non-uniform width seal ring structure A method of forming an improved seal ring structure is described. A continuous metal seal ring is formed along a perimeter of a die wherein the metal seal ring is parallel to the edges of the die and sloped at the corner of the die so as not to have a sharp corner a... | 09/04/2007 |
| 7238976 | Schottky barrier rectifier and method of manufacturing the same A Schottky barrier rectifier, in accordance with embodiments of the present invention, includes a first conductive layer and a semiconductor. The semiconductor includes a first doped region, a second doped region and a plurality of third doped regions. The second do... | 07/03/2007 |
| 7211500 | Pre-process before cutting a wafer and method of cutting a wafer A pre-process before cutting a wafer is described. The wafer includes a plurality of scribe lines and a plurality of dies defined by the scribe lines, and a material layer covers the wafer. A pre-processing step is performed to remove the material layer on the scrib... | 05/01/2007 |
| 7199442 | Schottky diode structure to reduce capacitance and switching losses and method of making same A SiC Schottky barrier diode (SBD) is provided having a substrate and two or more epitaxial layers, including at least a thin, lightly doped N-type top epitaxial layer, and an N-type epitaxial layer on which the topmost epitaxial layer is disposed. Multiple epitaxia... | 04/03/2007 |
| 7183575 | High reverse voltage silicon carbide diode and method of manufacturing the same high reverse voltage silicon carbide diode A high reverse voltage diode includes a hetero junction made up from a silicon carbide base layer, which constitutes a first semiconductor base layer, and a polycrystalline silicon layer, which constitutes a second semiconductor layer, and whose band gap is differen... | 02/27/2007 |
| 7176537 | High performance CMOS with metal-gate and Schottky source/drain A semiconductor device having a metal/metal silicide gate and a Schottky source/drain and a method of forming the same are provided. The semiconductor device includes a gate dielectric overlying a semiconductor substrate, a metal or metal silicide gate electrode hav... | 02/13/2007 |
| 7129558 | Chip-scale schottky device A chip-scale schottky package which has at least one cathode electrode and at least one anode electrode disposed on only one major surface of a die, and solder bumps connected to the electrode for surface mounting of the package on a circuit board. ... | 10/31/2006 |
| 7112865 | Diode and method for manufacturing the same A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode layer, a generally ring-like second-conductivity-type ring region formed ... | 09/26/2006 |
| 7102207 | Semiconductor device having rectifying action A semiconductor device including a base layer of a first conductivity type having a first main surface and a second main surface opposite the first main surface, a first main electrode layer connected to the first main surface, control regions arranged inside groove... | 09/05/2006 |
| 7101739 | Method for forming a schottky diode on a silicon carbide substrate A method for manufacturing a vertical Schottky diode with a guard ring on a lightly-doped N-type silicon carbide layer, including forming a P-type epitaxial layer on the N-type layer; implanting N-type dopants in areas of the P-type epitaxial layer to neutralize in ... | 09/05/2006 |
| 7078783 | Vertical unipolar component A vertical unipolar component formed in a semiconductor substrate. An upper portion of the substrate includes insulated trenches filled with a vertical multiple-layer of at least two conductive elements separated by an insulating layer, the multiple-layer depth bein... | 07/18/2006 |
| 7071525 | Merged P-i-N schottky structure A Merged P-i-N Schottky device in which the oppositely doped diffusions extend to a depth and have been spaced apart such that the device is capable of absorbing a reverse avalanche energy comparable to a Fast Recovery Epitaxial Diode having a comparatively deeper o... | 07/04/2006 |
| 6977208 | Schottky with thick trench bottom and termination oxide and process for manufacture A trench schottky diode which includes a thin insulation layer on the sidewalls of its trenches and a relatively thicker insulation layer at the bottoms of its trenches. ... | 12/20/2005 |
| 6949439 | Semiconductor power component and a method of producing same A semiconductor power component and a method for producing a semiconductor power component, in particular a vertical NPT-IGBT for ignition applications with a breakdown voltage of less than approx. 1000 V. The semiconductor power component includes a wafer substrate... | 09/27/2005 |
| 6946711 | Semiconductor device In a semiconductor device such as MOSFET, a single crystal semiconductor substrate is provided. An epitaxitial layer is formed on the single crystal semiconductor substrate. A p-well regions are formed on the epitaxitial layer, respectively, and n+ source... | 09/20/2005 |
| 6855999 | Schottky diode having a shallow trench contact structure for preventing junction leakage A method for fabricating a Schottky diode using a shallow trench contact to reduce leakage current in the fabrication of an integrated circuit device is described. An insulating layer is deposited over a thermal oxide layer provided overlying a silicon semiconductor... | 02/15/2005 |
| 6798034 | Technique for suppression of edge current in semiconductor devices A passive mechanism suppresses injection, into any active guard regions interposed between the edge of a photodiode array chip and the outer photodiode pixels or into the outer pixels themselves, of minority carrier current generated in the physically disrupted regi... | 09/28/2004 |
| 6787871 | Integrated schottky barrier diode and manufacturing method thereof An integrated Schottky barrier diode chip includes a compound semiconductor substrate, a plurality of Schottky barrier diodes formed on the substrate and an insulating region formed on the substrate by an on implantation. The insulating region electrically separates... | 09/07/2004 |
| 6740951 | Two-mask trench schottky diode A Schottky rectifier includes a semiconductor structure having first and second opposing faces each extending to define an active semiconductor region and a termination semiconductor region. The semiconductor structure includes a cathode region of the first conducti... | 05/25/2004 |
| 6734520 | Semiconductor component and method of producing it A semiconductor component includes a first layer and at least one adjacent semiconductor layer or metallic layer, which forms a rectifying junction with the first layer. Further semiconductor layers and metallic layers are provided for contacting the component. Insu... | 05/11/2004 |
| 6717229 | Distributed reverse surge guard A diode (20), having first and second conductive layers (24,26), a conductive pad (28), and a distributed reverse surge guard (22), provides increased protection from reverse current surges. The surge guard (22) includes an outer l... | 04/06/2004 |
| 6707127 | Trench schottky rectifier A Schottky rectifier is provided. The Schottky rectifier comprises: (a) a semiconductor region having first and second opposing faces, with the semiconductor region comprising a cathode region of first conductivity type adjacent the first face and a drift region of ... | 03/16/2004 |
| 6707128 | Vertical MISFET transistor surrounded by a Schottky barrier diode with a common source and anode electrode A semiconductor device comprises a first semiconductor layer of a first conductivity type provided on a semiconductor substrate of the first conductivity type, a base layer of a second conductivity type provided in the first semiconductor layer, for defining a verti... | 03/16/2004 |
| 6670688 | Semiconductor device including at least one schottky metal layer surrounding PN junction A semiconductor device which can prevent an operation thereof from being uncontrollable to obtain a high reliability, and can be manufactured easily and can reduce a manufacturing cost. A p-type impurity layer containing a p-type impurity in a relatively ... | 12/30/2003 |
| 6653707 | Low leakage Schottky diode A preferred embodiment of the present invention provides a Schottky diode (100) formed from a conductive anode contact (102), a semiconductor junction layer (104) supporting the conductive contact (102) and a base layer ring (108) formed around at least a... | 11/25/2003 |
| 6627967 | Schottky barrier diode A Schottky barrier diode has a Schottky contact region formed in an n epitaxial layer disposed on a GaAs substrate and an ohmic electrode surrounding the Schottky contact region. The ohmic electrode is disposed directly on an impurity-implanted region for... | 09/30/2003 |
| 6583485 | Schottky diode The invention relates to a semiconductor device, in particular a Schottky hybrid diode with a guard ring (S). The semiconductor device comprises a semiconductor substrate (1), an epitaxial layer (2) on which an insulating layer (3) with an opening (10) is... | 06/24/2003 |
| 6576973 | Schottky diode on a silicon carbide substrate A vertical Schottky diode including an N-type silicon carbide layer of low doping level formed by epitaxy on a silicon carbide substrate of high doping level. The periphery of the active area of the diode is coated with a P-type epitaxial silicon carbide ... | 06/10/2003 |
| 6551911 | Method for producing Schottky diodes and Schottky diodes A method for producing Schottky diodes having a protective ring in an edge region of a Schottky contact. The protective ring is produced by a protective ring material that is deposited onto a surface of a semiconductor layer, which surface is provided wit... | 04/22/2003 |
| 6531743 | SOI MOS field effect transistor and manufacturing method therefor A device isolation region made up of a silicon oxide film, which is perfectly isolated up to the direction of the thickness of an SOI silicon layer, and an activation region of the SOI silicon layer, whose only ends are locally thinned, are formed on an S... | 03/11/2003 |
| 6509622 | Integrated circuit guard ring structures An integrated circuit including a die having a circuit area and a plurality of guard rings. The circuit area includes active devices, passive devices, and interconnects connected to form an integrated circuit. The plurality of guard rings includes a plura... | 01/21/2003 |
