Class 257/482 - Microwave transit time device (e.g., IMPATT diode)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter wherein the avalanche breakdown provides
No. of patents: 35
Last issue date: 08/07/2007

Number	Title	Issue Date
7253034	Dual SIMOX hybrid orientation technology (HOT) substrates This invention provides a separation by implanted oxygen (SIMOX) method for forming planar hybrid orientation semiconductor-on-insulator (SOI) substrates having different crystal orientations, thereby making it possible for devices to be fabricated on crystal orient...	08/07/2007
7135717	Semiconductor switches and switching circuits for microwave The purpose of the present invention is to provide a small-sized switch attaining high isolation of not less than 80 dB, maintaining low insertion loss also in high frequencies not less than 60 GHz. A semiconductor switch according to the present invention utilizes ...	11/14/2006
7071525	Merged P-i-N schottky structure A Merged P-i-N Schottky device in which the oppositely doped diffusions extend to a depth and have been spaced apart such that the device is capable of absorbing a reverse avalanche energy comparable to a Fast Recovery Epitaxial Diode having a comparatively deeper o...	07/04/2006
7015556	Packaging substrate and manufacturing method thereof, integrated circuit device and manufacturing method thereof, and saw device A basic portion layer 21 of a substrate electrode 12a connected to a projecting electrode 13 electrically and mechanically on a substrate member of ceramics. The substrate member on which the basic portion layer 21 is formed is sub...	03/21/2006
7012337	Semiconductor device including a photosensitive resin covering at least a portion of a substrate having a via hole A semiconductor device includes a substrate with a via hole. An electrode is formed on a surface of the substrate so that a portion of the electrode extends through the via hole. A photosensitive resin is formed over the surface so as to cover an aperture of the via...	03/14/2006
6936868	Sequential mesa avalanche photodiode capable of realizing high sensitization and method of manufacturing the same A sequential mesa type avalanche photodiode (APD) includes a semiconductor substrate and a sequential mesa portion formed on the substrate. In the sequential mesa portion, a plurality of semiconductor layers, including a light absorbing layer and a multiplying layer...	08/30/2005
6921952	Torsion spring for MEMS structure A torsion spring for a MEMS structure has a plurality of beams, each beam having two ends wherein both ends are fixed to a predetermined area, and at least one connection bar disposed at a right angle to a lengthwise direction of the plurality of beams, wherein the ...	07/26/2005
6855587	Gate-controlled, negative resistance diode device using band-to-band tunneling A new gate-controlled, negative resistance diode device is achieved. The device comprises, first, a semiconductor layer in a substrate. The semiconductor layer contains an emitter region and a barrier region. The barrier region is in contact with the emitter region ...	02/15/2005
6759744	Electronic circuit unit suitable for miniaturization The electronic circuit unit of the present invention includes first and second insulating substrates on respective surfaces of which wiring patterns are formed, and thick-film passive elements formed on the surfaces of the first and second insulating substrates in a...	07/06/2004
6274922	Fabrication of high power semiconductor device with a heat sink and integration with planar microstrip circuitry A low cost highly integrated method of fabricating a heat sink on the backside of a power semiconductor device maintains device performance, improves thermal transfer, and enables reliable planar connections without having to dice the wafer or package the...	08/14/2001
6147386	Semiconductor device and method of producing the same A semiconductor device of the present invention is a semiconductor device of a complementary MIS field effect transistor, wherein an anode of a first diode is connected to a silicon substrate of a first conduction type while a cathode of the first diode i...	11/14/2000
6075276	ESD protection device using Zener diodes A semiconductor device is provided which includes a first conductivity type semiconductor substrate, a second conductivity type Zener region formed in a surface layer of the first conductivity type semiconductor substrate, a first conductivity type anode ...	06/13/2000
6002147	Hybrid microwave-frequency integrated circuit The microwave hybrid integrated circuit comprises a dielectric board (1) provided with a topological metallization pattern (2) on its face side, a shield grounding metallization (3) on the back side thereof, a hole (4), and a metal base (5) having a proje...	12/14/1999
5917227	Light-emitting-diode array and light-emitting-diode element A light-emitting-diode array includes a non-doped compound semiconductor layer between a substrate and a first compound semiconductor layer. A plurality of isolation regions extend from the first compound semiconductor layer to the surface of the non-dope...	06/29/1999
5612556	Monolithic integration of microwave silicon devices and low loss transmission lines A monolithic integrated circuit capable of operation in the microwave range which is fabricated using silicon technology wherein transmission line interconnects are fabricated along with active devices on the same substrate. The transmission line is provi...	03/18/1997
5559359	Microwave integrated circuit passive element structure and method for reducing signal propagation losses A passive element structure and method for a microwave integrated circuit reduces signal propagation losses. In one approach, a passive element (10) has an insulating layer (12) overlying a silicon substrate (14). A metal layer (16) comprising a signal li...	09/24/1996
5488253	Semiconductor device A semiconductor device includes a semiconductor substrate having opposite front and rear surfaces; lower electrodes disposed on the front surface of the substrate and a rear electrode disposed on the rear surface of the substrate; an air-bridge wiring dis...	01/30/1996
5371400	Semiconductor diode structure Desirably, a Schottky barrier semiconductor diode has low forward direction rising voltage and high inverse direction yield voltage. A semiconductor device is provided with a first metal producing a low Schottky barrier and a second metal producing a high...	12/06/1994
5347149	Integrated circuit and method Integrated circuits and fabrication methods incorporating both two-terminal devices such as IMPATT diodes (446) and Schottky diodes (454) and three-terminal devices such as n-channel MESFETs (480) in a monolithic integrated circuit....	09/13/1994
5343065	Method of controlling surge protection device hold current The hold current of a breakover type surge protection device is increased by irradiating the device with γ or x rays so as to form crystal lattice defects in the semiconductor regions thereof....	08/30/1994
5278444	Planar varactor frequency multiplier devices with blocking barrier A planar frequency tripler comprised of two semiconductor diode structures connected back-to-back by an n+ doped layer (N+) of semiconductor material utilizes an n doped semiconductor material for a drift region (N) over the back con...	01/11/1994
5140382	Microwave integrated circuit using a distributed line with a variable effective length In this invention, a distributed constant line on a microwave IC is formed of a Schottky metal, and a semiconductor conductive layer contacting the distributed constant line at least at one position and an ohmic contact electrode contacting the semiconduc...	08/18/1992
5086329	Planar gallium arsenide NPNP microwave switch A microwave switch is provided for controlling the transmission of microw energy in a microstrip transmission line structure. The microwave switch comprises an electrically conducting ground plane in contact with one side of an undoped semiconductor mate...	02/04/1992
4706041	Periodic negative resistance microwave structures and amplifier and oscillator embodiments thereof Structures (30) with IMPATT type diodes (34) located periodically along a transmission line (38-32) to simulate a distributed diode are disclosed. Preferred embodiments include incorporation of the periodic diode structures as the gain element of microwav...	11/10/1987
4352115	Transit time diode with an input structure formed by a matrix of micropoints A semiconducting diode utilizing the transit time of electrical charge carriers in a semiconductor medium, having an input structure formed by a matrix of micropoints, said matrix consisting of a plurality of microscopic contacts separated by an insulatin...	09/28/1982
4286276	Dual Schottky contact avalanche semiconductor structure with electrode spacing equal to EPI layer thickness A semiconductor structure comprising two conventional electrodes of an avalanche diode and furthermore a supplementary electrode. In a preferred embodiment the conventional and supplementary electrodes form two combs of which the teeth are intermingled an...	08/25/1981
4201604	Process for making a negative resistance diode utilizing spike doping A modified Read-type diode having an extremely thin doping spike and with the electric field in the drift region terminated before the buffer zone. The buffer zone and a drift region are first grown upon a doped semiconductor substrate using epitaxial vap...	05/06/1980
4197551	Semiconductor device having improved Schottky-barrier junction A semiconductor device having an improved non-diffusive Schottky-barrier junction and metallization layers and method for producing the same. A thin layer of a Schottky-barrier forming metal such as platinum is sputter deposited upon a hot gallium arsenid...	04/08/1980
4106959	Producing high efficiency gallium arsenide IMPATT diodes utilizing a gas injection system The operating frequency of an IMPATT diode depends on the width of the depletion region formed during operation. The frequency of high efficiency GaAs IMPATT diodes comprising a non-uniformly doped depletion region contacted by a rectifying barrier can be...	08/15/1978
4062103	Method for manufacturing a semiconductor device A method comprises forming a Schottky barrier forming a metal layer on one surface of a gallium arsenide substrate using niobium, tantalum and/or vanadium to provide a Schottky barrier, and subjecting the Schottky barrier to heat treatment at 350° to 800...	12/13/1977
4060820	Low noise read-type diode A Read-type avalanche diode having a low noise measure and capable of attaining output signal powers of one watt or more. An effective injection current is defined as the conduction current in the avalanche zone in the absence of avalanche multiplication ...	11/29/1977
4033810	Method for making avalanche semiconductor amplifier A microwave semiconductor amplifier or oscillator system in which a semiconductor device has an avalanching region at a junction and a heat sink having a higher thermal conductivity than said avalanching region in close thermal contact with the said junct...	07/05/1977
4034394	Schottky semiconductor device A Schottky semiconductor device includes a gallium arsenide substrate, a first metal layer formed of niobium, tantalum or vanadium to define a Schottky junction with the substrate, a second metal layer of platinum or palladium formed on the first metal la...	07/05/1977
4001858	Simultaneous molecular beam deposition of monocrystalline and polycrystalline III(a)-V(a) compounds to produce semiconductor devices Described is a molecular beam technique for fabricating semiconductor devices from Group III(a)-V(a) compounds. To form planar isolated devices, an amorphous insulative layer is formed on selected portions of a monocrystalline substrate of the Group III(a...	01/04/1977
3986192	High efficiency gallium arsenide impatt diodes The operating frequency of an IMPATT diode depends on the width of the depletion region formed during operation. The frequency of high efficiency GaAs IMPATT diodes comprising a non-uniformly doped depletion region contacted by a rectifying barrier can be...	10/12/1976

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Class 257/482 - Microwave transit time device (e.g., IMPATT diode)