Quotables
"To place a man in a multi-stage rocket and project him into the controlling gravitational field of the moon where the passengers can make scientific observations, perhaps land alive, and then return to earth--all that constitutes a wild dream worthy of Jules Verne. I am bold enough to say that such a man-made voyage will never occur regardless of all future advances."
Lee deForest, American radio pioneer ; 1957
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| Number | Title | Issue Date |
| 8188563 | Shallow-trench-isolation (STI)-bounded single-photon CMOS photodetector Techniques and apparatus for using single photon avalanche diode (SPAD) devices in various applications. ... | 05/29/2012 |
| 7443008 | Lateral programmable polysilicon structure incorporating polysilicon blocking diode A programmable element includes a diode and a programmable structure formed in a polysilicon layer isolated from a semiconductor substrate by a dielectric layer. The diode includes a first region and a second region of opposite conductivity types. The programmable s... | 10/28/2008 |
| 7436039 | Gallium nitride semiconductor device A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n− doped GaN layer having a thickness greater than one micron disposed on said n+ GaN laye... | 10/14/2008 |
| 7436070 | Semiconductor device A non-insulated DC-DC converter hs a power MOS•FRT for a highside switch and a power MOS•FET for a lowside switch. In the non-insulated DC-DC converter, the power MOS•FET for the highside switch and the power MOS•FET for the lowside switch, driver circuits t... | 10/14/2008 |
| 7429761 | High power diode utilizing secondary emission A high power diode includes a cathode for emitting a primary electron discharge, an anode, and a porous dielectric layer, e.g. a honeycomb ceramic, positioned between the cathode and the anode for receiving the primary electron discharge and emitting a secondary ele... | 09/30/2008 |
| 7368762 | Heterojunction photodiode The present invention provides a heterojunction photodiode which includes a pn or Schottky-barrier junction formed in a first material region having a bandgap energy Eg1. When reverse-biased, the junction creates a depletion region which expands towards a... | 05/06/2008 |
| 7333684 | Stack-integrated package of optical transceiver for single core full duplex fiber communications This invention relates to a novel stack-integration package of a light emitter and a photodetector in a high speed, full duplex optical transceiver for fiber communications. The structure is comprised of a photodetector chip, having an isolated micromachined cavity ... | 02/19/2008 |
| 7319046 | Integrated optoelectronic silicon biosensor for the detection of biomolecules labeled with chromophore groups or nanoparticles An integrated optoelectronic silicon biosensor that can detect biomolecules by the change of the optical coupling between the integrated light source and the integrated detector that is caused by the binding of the appropriately labeled analytes onto the recognition... | 01/15/2008 |
| 7310004 | Apparatus and method of interconnecting nanoscale programmable logic array clusters An apparatus and methods for interconnecting a plurality of nanoscale programmable logic array (PLA) clusters are disclosed. The appartus allows PLA clusters to be built at nanoscale dimensions, signal restoration to occur at the nanoscale, and interconnection betwe... | 12/18/2007 |
| 7274208 | Nanoscale wire-based sublithographic programmable logic arrays An apparatus and methods for a sublithographic programmable logic array (PLA) are disclosed. The apparatus allows combination of non-restoring, programmable junctions and fixed (non-programmable) restoration logic to implement any logic function or any finite-state ... | 09/25/2007 |
| 7242601 | Deterministic addressing of nanoscale devices assembled at sublithographic pitches A method for constructing and addressing a nanoscale memory with known addresses and for tolerating defects which may arise during manufacture or device operational lifetime. During construction, nanoscale wires with addresses are stochastically assembled. During a ... | 07/10/2007 |
| 7220636 | Process for controlling performance characteristics of a negative differential resistance (NDR) device A variety of processes are disclosed for controlling NDR characteristics for an NDR element, such as peak-to-valley ratio (PVR), NDR onset voltage (VNDR) and related parameters. The processes are based on conventional semiconductor manufacturing operation... | 05/22/2007 |
| 7217932 | UV sensor A UV sensor (1) includes a container (5) in which the upper end opening of a metal side tube (2) is sealed with a front plate (3) composed of borosilicate glass as an incident light window and the lower end opening is sealed with a base p... | 05/15/2007 |
| 7176505 | Electromechanical three-trace junction devices Three trace electromechanical circuits and methods of using same. A circuit includes first and second electrically conductive elements with a nanotube ribbon (or other electromechanical elements) disposed therebetween. An insulative layer is disposed on one of the f... | 02/13/2007 |
| 7130175 | Monolithic integratable circuit arrangement for protection against a transient voltage At least one or more terminals of an integrated circuit, such as a low- or high-side driver stage, are protected against transient or over-voltages by two pairs of diodes. A first pair of diodes includes a regular diode (D1 or D1′) and a Zener-diode (ZD1 or ZD1′... | 10/31/2006 |
| 7120047 | Device selection circuitry constructed with nanotube technology A memory system having electromechanical memory cells and decoders is disclosed. A decoder circuit selects at least one of the memory cells of an array of such cells. Each cell in the array is a crossbar junction at least one element of which is a nanotube or a nano... | 10/10/2006 |
| 7109498 | Radiation source, lithographic apparatus, and device manufacturing method A radiation source for use in lithography. The radiation source comprising a pn-junction disposed on a substrate that can be reverse-biased to cause avalanche breakdown and emission of UV or DUV radiation by deceleration of electrons accelerated into an n-type regio... | 09/19/2006 |
| 7091572 | Fast recovery diode with a single large area p/n junction A fast recovery diode has a single large area P/N junction surrounded by a termination region. The anode contact in contact with the central active area extends over the inner periphery of an oxide termination ring and an EQR metal ring extends over the outer periph... | 08/15/2006 |
| 7078783 | Vertical unipolar component A vertical unipolar component formed in a semiconductor substrate. An upper portion of the substrate includes insulated trenches filled with a vertical multiple-layer of at least two conductive elements separated by an insulating layer, the multiple-layer depth bein... | 07/18/2006 |
| 7078781 | High-breakdown-voltage semiconductor device A high-breakdown-voltage semiconductor device includes a high-resistance semiconductor layer, first trenches formed on the surface thereof in a longitudinal plane shape and in parallel, a Schottky electrode formed thereon and sandwiched between adjacent first trench... | 07/18/2006 |
| 7073157 | Array-based architecture for molecular electronics An architecture for nanoscale electronics is disclosed. The architecture comprises arrays of crossed nanoscale wires having selectively programmable crosspoints. Nanoscale wires of one array are shared by other arrays, thus providing signal propagation between the a... | 07/04/2006 |
| 7071525 | Merged P-i-N schottky structure A Merged P-i-N Schottky device in which the oppositely doped diffusions extend to a depth and have been spaced apart such that the device is capable of absorbing a reverse avalanche energy comparable to a Fast Recovery Epitaxial Diode having a comparatively deeper o... | 07/04/2006 |
| 7071537 | Power device having electrodes on a top surface thereof A power device includes a substrate assembly including an upper surface and a lower surface. The substrate assembly includes a first layer and a second layer. The first layer overlies the second layer and has different conductivity than the second layer. A first ele... | 07/04/2006 |
| 7022597 | Method for manufacturing gallium nitride based transparent conductive oxidized film ohmic electrodes A method for manufacturing gallium nitride based transparent conductive oxidized film ohmic electrodes includes forming a transparent conductive film on a GaN layer, forming a transparent conductive hetero-junction of opposing electrical characteristics on a transpa... | 04/04/2006 |
| 7019379 | Semiconductor device comprising voltage regulator element A semiconductor device includes a heavily doped layer 25 of p-type formed in the surface of an n-type well 21, an intermediately doped layer 26 of p-type formed to adjoin and surround the heavily p-doped layer 25, and an isolation region ... | 03/28/2006 |
| 7012833 | Integrated circuit having negative differential resistance (NDR) devices with varied peak-to-valley ratios (PVRs) An integrated circuit is disclosed which includes a variety of NDR devices having different characteristics. The different NDR devices are formed to have different PVRs, different onset NDR voltages, etc. in a common substrate, by controlling various conventional pr... | 03/14/2006 |
| 6995444 | Ultrasensitive photodetector with integrated pinhole for confocal microscopes Photodetector device comprising a semiconductor substrate (1) of a first type of conductivity connected to a first electrode (2). Said substrate comprises an active area (4) made up of different semiconductor regions of a second type of conducti... | 02/07/2006 |
| 6979590 | Methods of making electromechanical three-trace junction devices Methods of producing an electromechanical circuit element are described. A lower structure having lower support structures and a lower electrically conductive element is provided. A nanotube ribbon (or other electromechanically responsive element) is formed on an up... | 12/27/2005 |
| 6963077 | Sublithographic nanoscale memory architecture A memory array comprising nanoscale wires is disclosed. The nanoscale wires are addressed by means of controllable regions axially and/or radially distributed along the nanoscale wires. In a one-dimensional embodiment, memory locations are defined by crossing points... | 11/08/2005 |
| 6960783 | Erasing and programming an organic memory device and method of fabricating An organic memory cell made of two electrodes with a selectively conductive media between the two electrodes is disclosed. The selectively conductive media contains an organic layer and passive layer. The selectively conductive media is programmed by applying bias v... | 11/01/2005 |
| 6936868 | Sequential mesa avalanche photodiode capable of realizing high sensitization and method of manufacturing the same A sequential mesa type avalanche photodiode (APD) includes a semiconductor substrate and a sequential mesa portion formed on the substrate. In the sequential mesa portion, a plurality of semiconductor layers, including a light absorbing layer and a multiplying layer... | 08/30/2005 |
| 6919592 | Electromechanical memory array using nanotube ribbons and method for making same Electromechanical circuits, such as memory cells, and methods for making same are disclosed. The circuits include a structure having electrically conductive traces and supports extending from a surface of the substrate, and nanotube ribbons suspended by the supports... | 07/19/2005 |
| 6911682 | Electromechanical three-trace junction devices Three trace electromechanical circuits and methods of using same are described. A circuit includes first and second electrically conductive elements with a nanotube ribbon (or other electromechanical elements) disposed therebetween. The nanotube ribbon is movable to... | 06/28/2005 |
| 6855999 | Schottky diode having a shallow trench contact structure for preventing junction leakage A method for fabricating a Schottky diode using a shallow trench contact to reduce leakage current in the fabrication of an integrated circuit device is described. An insulating layer is deposited over a thermal oxide layer provided overlying a silicon semiconductor... | 02/15/2005 |
| 6855983 | Semiconductor device having reduced on resistance A trench gate type semiconductor device has an ON resistance that has been reduced. The device has a drain electrode on one side of the substrate and has a drift region, channel region, source region, and a source electrode on the other side. The channel region is s... | 02/15/2005 |
| 6791161 | Precision Zener diodes The present invention is directed to a novel semiconductor device, which can be efficiently fabricated for use in Zener diode applications. Precision Zener diodes and the method for manufacturing the same are provided. The Zener diodes of the present invention are m... | 09/14/2004 |
| 6768138 | Diode element The invention relates to technology improving the withstand voltage of a Schottky diode. With a diode of the present invention, the distance a between the long sides of the narrow groove withstand voltage portions and the inner ring circumference of the intermediate... | 07/27/2004 |
| 6730979 | Recessed p-type region cap layer avalanche photodiode A recessed p-type region cap layer avalanche photodiode (12) is provided. The photodiode (12) includes a semiconductor substrate (30) and a semiconductor stack (32), which is electrically coupled to the substrate (30). A cap layer ... | 05/04/2004 |
| 6724018 | Zn1-xMgxSySe1-y pin-photodiode and Zn1-xMgxSySe1-y avalanche-photodiode A blue-violet-near-ultraviolet pin-photodiode with small dark current, high reliability and long lifetime. The pin-photodiode has a metallic n-electrode, a n-ZnSe single crystal substrate, an optionally added n-ZnSe buffer layer, an n-Zn1-xMgxS... | 04/20/2004 |
| 6713937 | Minitab rectifier for alternators A diode for use in an under-the-hood automotive application has a TO 220 outline and consists of a diode die on a two piece lead frame which has a thick section to which the bottom of the die is soldered, and a thinner section which extends through a plastic housing... | 03/30/2004 |
