Class 257/480 - In voltage variable capacitance diode

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter wherein the Schottky barrier is used in a
No. of patents: 54
Last issue date: 10/14/2008

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Number	Title	Issue Date
7436039	Gallium nitride semiconductor device A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n− doped GaN layer having a thickness greater than one micron disposed on said n+ GaN laye...	10/14/2008
7386065	Voltage controlled oscillator (VCO) suitable for use in frequency shift keying (FSK) system A voltage controlled oscillator (VCO), suitable for use in a frequency shift keying (FSK) system. The VCO device comprises a switching varactor unit, having a first terminal and a second terminal, wherein the switching varactor unit produces a capacitance, according...	06/10/2008
7321158	Method of manufacturing variable capacitance diode and variable capacitance diode In a method of manufacturing a variable capacitance diode according to the present invention, a mask is formed on a semiconductor substrate of a first conductive type having a low impurity concentration, a semiconductor region of the first conductive type having an ...	01/22/2008
7312483	Thin film transistor device and method of manufacturing the same A semiconductor film is formed on a substrate. Subsequently, a resist film is formed on the semiconductor film, and dry etching is performed to the semiconductor film using the resist film as a mask. Due to the dry etching, the edge portion of the semiconductor film...	12/25/2007
7311008	Semiconductor structure comprising a stress sensitive element and method of measuring a stress in a semiconductor structure A semiconductor structure comprises a stress sensitive element. A property of the stress sensitive element is representative of a stress in the semiconductor structure. Additionally, the semiconductor structure may comprise an electrical element. The stress sensitiv...	12/25/2007
7301203	Superjunction semiconductor device In accordance with an embodiment of the invention, a superjunction semiconductor device includes an active region and a termination region surrounding the active region. A central vertical axis of a boundary column of a second conductivity type material defines the ...	11/27/2007
7193255	Semiconductor device with floating conducting region placed between device elements Floating conducting regions at floating potentials are placed on a substrate surface between adjacent conducting regions to which predetermined potentials are applied. This makes it possible to block the spread of a depletion layer to the substrate between the condu...	03/20/2007
7183626	Passivation structure with voltage equalizing loops A semiconductor device which includes a passivation structure formed with a conductive strip of resistive material that crosses itself once around the active region of the device to form a first closed loop, a continuous strip that loops around the first closed loop...	02/27/2007
7157742	Integrated circuit device An integrally packaged optronic integrated circuit device (310) including an integrated circuit die (322) containing at least one of a radiation emitter and radiation receiver and having top and bottom surfaces formed of electrically insulative and mec...	01/02/2007
7098521	Reduced guard ring in schottky barrier diode structure Schottky barrier diodes use a dielectric separation region to bound an active region. The dielectric separation region permits the elimination of a guard ring in at least one dimension. Further, using a dielectric separation region in an active portion of the integr...	08/29/2006
7026701	Schottky barrier photodetectors A Schottky barrier photodetector comprises a waveguide structure formed by a thin strip of material having a relatively high free charge carrier density, for example a conductor or certain classes of highly-doped semiconductor, surrounded by material having a relati...	04/11/2006
6979877	Solid-state device A method of making dielectrically isolated solid state device comprising state device (including integrated circuits) comprises providing a silicon wafer having a PN junction or other electronic rectifying barrier contained therein and thermally growing or ion-impla...	12/27/2005
6967538	PLL having VCO for dividing frequency A PLL comprising a phase detector, a loop filter and a VCO is disclosed. The phase detector periodically compares an externally inputted clock signal with a frequency of an internal clock signal, and outputs an output signal resulting from phase difference of the tw...	11/22/2005
6855999	Schottky diode having a shallow trench contact structure for preventing junction leakage A method for fabricating a Schottky diode using a shallow trench contact to reduce leakage current in the fabrication of an integrated circuit device is described. An insulating layer is deposited over a thermal oxide layer provided overlying a silicon semiconductor...	02/15/2005
6791121	Semiconductor device and method of manufacturing the same A semiconductor device, such as a pin diode, includes a first drift layer, a second drift layer, an anode layer on the first drift layer, and a buffer layer formed between the first and second drift layers. The shortest distance from the pn-junction between the anod...	09/14/2004
6787882	Semiconductor varactor diode with doped heterojunction A semiconductor device includes a plurality of barrier layers and a plurality of quantum well layers which are alternately interleaved with each other and disposed on a substrate of semiconductor material so as to form a multiple-heterojunction varactor diode. The b...	09/07/2004
6787871	Integrated schottky barrier diode and manufacturing method thereof An integrated Schottky barrier diode chip includes a compound semiconductor substrate, a plurality of Schottky barrier diodes formed on the substrate and an insulating region formed on the substrate by an on implantation. The insulating region electrically separates...	09/07/2004
6756606	Apparatus and method for marking defective sections of laminate substrates A method and apparatus is provided to identify defective laminate objects or package substrates having mounting sites for integrated circuit dies during the package substrate fabrication process. A hole is drilled or punched within the boundary of an individual pack...	06/29/2004
6686640	Varactor having improved Q-factor and method of fabricating the same using SiGe heterojunction bipolar transistor A varactor includes a semiconductor substrate of a first conductivity type, a high-concentration buried collector region of a second conductivity type formed in an upper portion of the semiconductor substrate, a collector region of the second conductivity...	02/03/2004
6683362	Metal-semiconductor diode clamped complementary field effect transistor integrated circuits The subject invention relates to a metal-semiconductor diode clamped semiconductor device and method for producing such device. A specific embodiment of the subject invention utilizes one or more Schottky barriers at, for example, the drain and/or source ...	01/27/2004
6673265	Antimony-based heterostructure varactor diode with bandgap engineered quantum well electrodes The present invention provides a varactor diode for frequency multipliers at submillimeter wave frequencies and above. Functionally the new diode replaces the conventional heterostructure barrier varactor diode. Two important features of the antimony-base...	01/06/2004
6670688	Semiconductor device including at least one schottky metal layer surrounding PN junction A semiconductor device which can prevent an operation thereof from being uncontrollable to obtain a high reliability, and can be manufactured easily and can reduce a manufacturing cost. A p-type impurity layer containing a p-type impurity in a relatively ...	12/30/2003
6661074	Receiver comprising a variable capacitance diode A receiver for radio or television signals provided with a high-frequency circuit having a discrete semiconductor component which includes a planar variable capacitance diode and an integrated series resistor formed on a common semiconductor or substrate....	12/09/2003
6627967	Schottky barrier diode A Schottky barrier diode has a Schottky contact region formed in an n epitaxial layer disposed on a GaAs substrate and an ohmic electrode surrounding the Schottky contact region. The ohmic electrode is disposed directly on an impurity-implanted region for...	09/30/2003
6605854	Schottky diode with bump electrodes The package size of a diode is made smaller. On the element forming face of a semiconductor substrate having a p- -type conductive type, after a hyper-abrupt p+ n+ junction of a p+ -type diffusion layer, an n	08/12/2003
6489670	Sealed symmetric multilayered microelectronic device package with integral windows A sealed symmetric multilayered package with integral windows for housing one or more microelectronic devices. The devices can be a semiconductor chip, a CCD chip, a CMOS chip, a VCSEL chip, a laser diode, a MEMS device, or a IMEMS device. The multilayere...	12/03/2002
6479840	Diode Disclosed is an inventive diode which can reduce a stray capacity to improve various characteristics thereof, in which a dielectric layer, a conductive layer and a second dielectric layer are respectively formed by deposition in this order on an upper fac...	11/12/2002
6426540	Optimized border of semiconductor components The invention relates to a semiconductor component which is capable of blocking such as an (IGBT), a thyristor, a GTO or diodes, especially schottky diodes. An insulator profile section (10a, 10b, 10c, 10d, 11) provided in the border area of an anode meta...	07/30/2002
6417552	Solid-state imaging device The invention relates to a solid-state imaging device (1) which is encapsulated in a ceramic package covered by a transparent window (6) comprising a phosphorus-containing glass. The window is provided with a coating (8), for example of chromium, at the c...	07/09/2002
6348742	Sacrificial bond pads for laser configured integrated circuits A bond pad structure is provided which has a primary bond pad region electrically connected to a secondary bond pad region. The secondary bond pad region is used to test a circuit for configuration, while the primary bond pad is covered with a protective ...	02/19/2002
6339249	Semiconductor diode A semiconductor diode has two electrodes that form a cathode and an anode. The semiconductor diode is distinguished by the fact that at least one of the electrodes is curved, and that a surface area of the other electrode amounts to at most 20% of a produ...	01/15/2002
6208012	Zener zap diode and method of manufacturing the same The invention provides a zener zap diode having a high reliability and a method of manufacturing the same that can remove the problems accompanied with the zener zap trimming. In order to attain the object, the zener zap diode according to the invention i...	03/27/2001
5747865	Varactor diode controllable by surface layout design An area-variable varactor diode is disclosed, in which the capacitance can be arbitrarily varied under an applied bias voltage. The area-variable varactor diode is characterized in that, in order to ensure freedom to designing the epi-layer, to obtain the...	05/05/1998
5699541	Memory system using schottky diodes to reduce load capacitance A computer memory system is disclosed with an input/output circuitry capable of separating the load separating the load capacitance of an output circuit of a semiconductor memory connected to a memory bus from the memory bus. In order to separate the load...	12/16/1997
5352627	Monolithic high voltage nonlinear transmission line fabrication process A process for fabricating sequential inductors and varactor diodes of a monolithic, high voltage, nonlinear, transmission line in GaAs is disclosed. An epitaxially grown laminate is produced by applying a low doped active n-type GaAs layer to an n-plus ty...	10/04/1994
5336923	Varactor diode having a stepped capacitance-voltage profile A varactor diode having a stepped capacitance-voltage profile, formed in heterostructural integrated circuit technology. Several layers in the diode structure have pulse doping to confine conduction in the diode to a sheet of charge that provides the step...	08/09/1994
5278444	Planar varactor frequency multiplier devices with blocking barrier A planar frequency tripler comprised of two semiconductor diode structures connected back-to-back by an n+ doped layer (N+) of semiconductor material utilizes an n doped semiconductor material for a drift region (N) over the back con...	01/11/1994
5256996	Integrated coplanar strip nonlinear transmission line An integrated coplanar strip nonlinear transmission line comprising a substrate of gallium arsenide upon which a heavily doped buried layer and a lightly doped surface layer of epitaxially grown gallium arsenide are grown. Two parallel conductors are inte...	10/26/1993
5220194	Tunable capacitor with RF-DC isolation A variable field effect capacitive device suitable for providing different amounts of capacitance in response to control signals of different magnitudes. The device includes a pair of plate electrodes and a pair of control electrodes. A semiconductor regi...	06/15/1993
5204540	Resin sealed semiconductor device for use in testing and evaluation method of stress due to resin seal A resin sealed semiconductor device for use in testing is disclosed, in which a first MOS field effect transistor is formed in a region within 100 μm from an outer perimeter of a main surface of a silicon substrate, and a second MOS field effect transist...	04/20/1993

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Class 257/480 - In voltage variable capacitance diode