Quotables
"We are probably nearing the limit of all we can know about astronomy."
Simon Newcomb, astronomer ; 1888
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7939905 | Electrostatic discharge protection method and device for semiconductor device including an electrostatic discharge protection element providing a discharge path of a surge current According to an embodiment of the present invention, an electrostatic breakdown protection method protects a semiconductor device from a surge current impressed between a first terminal and a second terminal, the semiconductor device including: a diode impressing a ... | 05/10/2011 |
| 7321140 | Magnetron sputtered metallization of a nickel silicon alloy, especially useful as solder bump barrier A nickel silicon alloy barrier layer formed between a metal bonding pad on an integrated circuit and a tin-based solder ball, for example, a lead-free solder. The nickel silicon alloy contains at least 2 wt % silicon and preferably less than 20 wt %. An adhesion lay... | 01/22/2008 |
| 7262498 | Assembly with a ring and bonding pads formed of a same material on a substrate An assembly includes a substrate, a device coupled to the substrate; a ring formed on the substrate; and one or more bonding pads formed on the substrate, wherein the ring and bonding pads are formed of a same material. ... | 08/28/2007 |
| 7190007 | Isolated fully depleted silicon-on-insulator regions by selective etch The present invention provides a method of forming an ultra-thin and uniform layer of Si including the steps of providing a substrate having semiconducting regions separated by insulating regions; implanting dopants into the substrate to provide an etch differential... | 03/13/2007 |
| 7102234 | Method and structure for reduction of contact resistance of metal silicides using a metal-germanium alloy A method of reducing the contact resistance of metal silicides to the p+ silicon area or the n+ silicon area of the substrate comprising: (a) forming a metal germanium (Ge) layer over a silicon-containing substrate, wherein said metal is selected from the group cons... | 09/05/2006 |
| 7019378 | Field-shielded SOI-MOS structure free from floating body effects, and method of fabrication therefor A silicon-on-insulator structure provides an effective drift field for holes, and simultaneously enhanced recombination centers for holes and electrons. The structure includes a silicon substrate, an oxide insulation layer disposed above the silicon substrate, a sil... | 03/28/2006 |
| 6670650 | Power semiconductor rectifier with ring-shaped trenches A high-speed, soft-recovery semiconductor device that reduces leakage current by increasing the Schottky ratio of Schottky contacts to pn junctions. In one embodiment of the present invention, an n- drift layer is formed on an n+ cat... | 12/30/2003 |
| 6417554 | Latch free IGBT with schottky gate A three layer IGBT which cannot latch on is provided with a trench gate and a Schottky contact to the depletion region surrounding the trench gate. An emitter contact is connected to base diffusion regions which are diffused into the depletion region. The... | 07/09/2002 |
| 6351018 | Monolithically integrated trench MOSFET and Schottky diode A monolithically integrated Schottky diode together with a high performance trenched gate MOSFET. A MOS enhanced Schottky diode structure is interspersed throughout the trench MOSFET cell array to enhance the performance characteristics of the MOSFET swit... | 02/26/2002 |
| 6208012 | Zener zap diode and method of manufacturing the same The invention provides a zener zap diode having a high reliability and a method of manufacturing the same that can remove the problems accompanied with the zener zap trimming. In order to attain the object, the zener zap diode according to the invention i... | 03/27/2001 |
| 5536966 | Retrograde NWell cathode Schottky transistor and fabrication process An improved Schottky transistor structure (6), including a bipolar transistor structure (7) and a Schottky diode structure (8), is formed by retrograde diffusing relatively fast diffusing atoms to form a localized retrograde diode well (9) as the substrat... | 07/16/1996 |
| 5376809 | Surge protection device A surge protection device for absorbing surges of either polarity has a second region forming a first pn junction with a first region, a third region capable of injecting first minority carriers into the second region, a fourth region forming a second pn ... | 12/27/1994 |
| 5371400 | Semiconductor diode structure Desirably, a Schottky barrier semiconductor diode has low forward direction rising voltage and high inverse direction yield voltage. A semiconductor device is provided with a first metal producing a low Schottky barrier and a second metal producing a high... | 12/06/1994 |
| 5250834 | Silicide interconnection with schottky barrier diode isolation In a semiconductor device, an interconnection of differentially doped diffusion regions formed on a substrate includes an interconnecting layer disposed between the two diffusion regions so that the two regions are coupled to one another. The interconnect... | 10/05/1993 |
| 5111253 | Multicellular FET having a Schottky diode merged therewith A semiconductor power switching device comprises a multicellular FET structure with a Schottky barrier diode structure interspersed therewith with at least some of the FET cells being free of Schottky barrier portions. The ratio of Schottky barrier contac... | 05/05/1992 |
| 4969027 | Power bipolar transistor device with integral antisaturation diode A high power bipolar transistor device includes an integral antisaturation Schottky diode resulting from direct contact between the metallic base electrode and the collector region of the transistor. The barrier height of the Schottky diode is chosen so t... | 11/06/1990 |
| 4965643 | Schottky diode for integrated circuits An improved Schottky diode may be placed above an insulating layer such as the field oxide instead of within an epitaxial layer. The forward voltage, dynamic resistance and breakdown voltage may all be tailored.... | 10/23/1990 |
| 4943742 | Schottky barrier diode clamp transistor A semiconductor device used for, particularly, an output stage of a logic circuit is formed by a Schottky.barrier.diode clamping transistor. A clamping circuit is provided between a collector and a base for clamping a collector potential. The clamping cir... | 07/24/1990 |
| 4835580 | Schottky barrier diode and method The preferred embodiments include Schottky barrier diode (80) clmaped bipolar transistors for use in planar integrated circuits with the diode (80) being formed in a trench to increase junction area, reduce series resistance from junction to the buried la... | 05/30/1989 |
| 4823172 | Vertical MOSFET having Schottky diode for latch-up prevention In a vertical MOSFET of a conductivity modulated type or a standard type, including an n epitaxial layer grown on a p+ or n+ substrate, a p type channel region, and an n+ source region, there is further provided a Schottky... | 04/18/1989 |
| 4811065 | Power DMOS transistor with high speed body diode This inventive DMOS transistor provides faster turn-on switching than prior art lateral and vertical DMOS transistors in dV/dt situations and prevents catastrophic failures from high dV/dt's. The preferred embodiment of this improved device combines a Sch... | 03/07/1989 |
| 4806787 | Schmitt circuit for semiconductor integrated circuit A Schmitt circuit for a semiconductor integrated circuit has resistances of predetermined resistors of the Schmitt circuit respectively selected from a plurality of resistances so as to obtain desired threshold voltages by selecting electrodes to which wi... | 02/21/1989 |
| 4807008 | Static memory cell using a heterostructure complementary transistor switch A heterostructure complementary transistor switch (HCTS) is fabricated using epitaxial layers on a substrate to form the desired P-N-P-N (or N-P-N-P) complementary structure in III-V compound semiconductor materials. Two HCTS are formed on a single substr... | 02/21/1989 |
| 4752813 | Schottky diode and ohmic contact metallurgy A Schottky barrier diode and ohmic contact metallurgy which is especially suited for shallow-junction bipolar semiconductor devices. The metallurgy comprises a thin layer of an at least 95 atomic % pure Schottky metal disposed in the contact openings on a... | 06/21/1988 |
| 4613887 | Semiconductor device with a means for discharging carriers In an output transistor of transistor-transistor logic (TTL) circuits, an output transistor of TTL is provided with, in a region between a p-type base region and the p-type semiconductor substrate on which a TTL circuit is fabricated, a p- diff... | 09/23/1986 |
| 4586071 | Heterostructure bipolar transistor A heterojunction bipolar transistor having an ohmic contact at the intersection of the base and an adjacent region serving as emitter or collector that forms an ohmic contact to the base and a Schottky barrier to the adjacent emitter or collector. A GaAs-... | 04/29/1986 |
| 4443808 | Semiconductor device A semiconductor device having a high breakdown voltage transistor and a Schottky barrier diode. The Schottky barrier diode is formed in a surface portion of a semiconductor layer adjacent to the base region of the transistor, and a well layer of the same ... | 04/17/1984 |
| 4394673 | Rare earth silicide Schottky barriers In the practice of this disclosure, rare earth disilicide low Schottky barriers (.ltorsim.0.4 eV) are used as low resistance contacts to n-Si. Further, high resistance contacts to p-Si (Schottky barrier of .gtorsim.0.7 eV) are also available by practice o... | 07/19/1983 |
| 4333100 | Aluminum Schottky contacts and silicon-aluminum interconnects for integrated circuits A silicon substrate integrated circuit having a layer of aluminum forming Schottky contacts with lightly doped N conductivity regions and silicon doped aluminum forming ohmic contacts to heavily doped N conductivity regions and forming interconnects betwe... | 06/01/1982 |
| 4316202 | Semiconductor integrated circuit device having a Schottky barrier diode An integrated Schottky barrier diode having a low forward voltage is disclosed. It has been discovered that, contrary to previous theory, the mathematical relationships between the contact area of a Schottky barrier diode and the series resistance thereof... | 02/16/1982 |
| 4282538 | Method of integrating semiconductor components A dielectric-isolated PNP transistor with Schottky protection, either alone or as one of an integrated pair of complementary bipolar transistors has complete dielectric isolation from neighboring devices and from the substrate by means of a topside anisot... | 08/04/1981 |
| 4253105 | Semiconductor power device incorporating a schottky barrier diode between base and emitter of a PNP device A semiconductor power device comprises a semiconductor pellet having first and second opposing major surfaces, including, in series, emitter, base and collector regions forming a PNP transistor. The collector region is substantially planar and adjacent to... | 02/24/1981 |
| 4228448 | Bipolar integrated semiconductor structure including I2 L and linear type devices and fabrication methods therefor This disclosure relates to a bipolar integrated semiconductor structure that has incorporated therein both I2 L and linear type bipolar devices. The integrated structure utilizes a double epitaxial layer deposited or formed on a starting substr... | 10/14/1980 |
| 4199860 | Method of integrating semiconductor components A dielectric-isolated PNP transistor with Schottky protection, either alone or as one of an integrated pair of complementary bipolar transistors has complete dielectric isolation from neighboring devices and from the substrate by means of a topside anisot... | 04/29/1980 |
| 4178603 | Schottky transistor with low residual voltage A planar transistor has its base-collector-pn-junction bridged with a Schottky diode, wherein the degree of coupling of the Schottky diode is modified by means of a semiconducting layer with non-homogenous doping.... | 12/11/1979 |
| 4156246 | Combined ohmic and Schottky output transistors for logic circuit A silicon semiconductor integrated logic circuit of the injection or merged transistor logic type has output contacts in which ohmic and Schottky barrier portions are combined. A portion of the surface region of each output transistor collector is convert... | 05/22/1979 |
| 4127860 | Integrated circuit mesa bipolar device on insulating substrate incorporating Schottky barrier contact A PNP bipolar transistor is protected by a Schottky barrier, in which an N- base of the device forms a Schottky diode with a metallizing which is used as the collector. No separate P- semiconductor region is provided as the collector. Such transistors may... | 11/28/1978 |
| 4121116 | Component for logic circuits and logic circuits equipped with this component A component for integrated logic circuits comprises two complementary transistors integrated on the same substrate. A Schottky diode is connected in parallel with the output electrode and prevents saturation of the output transistor when it is in the cond... | 10/17/1978 |
| 4084174 | Graduated multiple collector structure for inverted vertical bipolar transistors A graduated multiple collector structure for inverted vertical bipolar transistors, integrated injection logic devices and the like. The invention increases the gain of more distant collectors toward which current flows laterally past intervening collecto... | 04/11/1978 |
| 4079408 | Semiconductor structure with annular collector/subcollector region Disclosed is a semiconductor structure with an annular collector/subcollector region. The base area with the emitter, is positioned over the collector/subcollector region only, resulting in a smaller base to collector capacitance. Packing density is impro... | 03/14/1978 |
