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| Number | Title | Issue Date |
| 8169047 | Semiconductor device comprising a schottky barrier diode The present invention aims to enhance the reliability of a semiconductor device equipped with a Schottky barrier diode within the same chip, and its manufacturing technology. The semiconductor device includes an n-type n-well region formed over a p-type semiconducto... | 05/01/2012 |
| 8143690 | Semiconductor device having electrostatic discharge protection circuit and method of manufacturing the same Semiconductor device having an on-chip type electrostatic discharge (ESD) protection circuit and a method of manufacturing the same are provided. The on-chip type ESD protection circuit may include a first junction diode having a first conductive type region contact... | 03/27/2012 |
| 8129814 | Schottky diode with silicide anode and anode-encircling P-type doped region An integrated circuit includes a Schottky diode having a cathode defined by an n-type semiconductor region, an anode defined by a cobalt silicide region, and a p-type region laterally annularly encircling the cobalt silicide region. The resulting p-n junction forms ... | 03/06/2012 |
| 8044486 | Bottom anode Schottky diode structure This invention discloses a bottom-anode Schottky (BAS) diode that includes an anode electrode disposed on a bottom surface of a semiconductor substrate. The bottom-anode Schottky diode further includes a sinker dopant region disposed at a depth in the semiconductor ... | 10/25/2011 |
| 8018021 | Schottky diode and method of fabricating the same A schottky diode may include a schottky junction including a well formed in a semiconductor substrate and a first electrode contacting the first well. The well may have a first conductivity type. A first ohmic junction may include a first junction region formed in t... | 09/13/2011 |
| 7915704 | Schottky diode Improved Schottky diodes (20) with reduced leakage current and improved breakdown voltage are provided by building a JFET (56) into the diode, serially located in the anode-cathode current path (32). The gates of the JFET (56) formed by d... | 03/29/2011 |
| 7902626 | Semiconductor device and method for its manufacture In semiconductor devices and methods for their manufacture, the semiconductor devices are arranged as a trench-Schottky-barrier-Schottky diode having a pn diode as a clamping element (TSBS-pn), and having additional properties compared to usual TSBS elements which m... | 03/08/2011 |
| 7875950 | Schottky diode structure with multi-portioned guard ring and method of manufacture In one embodiment, a semiconductor structure comprises a multi-portioned guard ring that includes a first portion and a second portion formed in a region of semiconductor material. A conductive contact layer forms a first Schottky barrier with the region of semicond... | 01/25/2011 |
| 7829970 | Junction barrier schottky diode having high reverse blocking voltage A junction barrier Schottky diode has an N-type well having surface and a first impurity concentration; a p-type anode region in the surface of the well, and having a second impurity concentration; and an N-type cathode region in the surface of the well and horizont... | 11/09/2010 |
| 7750426 | Junction barrier Schottky diode with dual silicides An integrated circuit, including a junction barrier Schottky diode, has an N type well, a P-type anode region in the surface of the well, and an N-type Schottky region in the surface of the well and horizontally abutting the anode region. A first silicide layer is o... | 07/06/2010 |
| 7701031 | Integrated circuit structure and manufacturing method thereof An integrated circuit structure is described, and includes a substrate, a contact window, and a Schottky contact metal layer. A heavily doped region and a lightly doped region are formed in the substrate. The contact window is disposed above the heavily doped region... | 04/20/2010 |
| 7633135 | Bottom anode Schottky diode structure and method This invention discloses a bottom-anode Schottky (BAS) diode that includes an anode electrode disposed on a bottom surface of a semiconductor substrate. The bottom-anode Schottky diode further includes a sinker dopant region disposed at a depth in the semiconductor ... | 12/15/2009 |
| 7608907 | LDMOS gate controlled schottky diode An improved diode is disclosed. The diode comprises a Schottky diode and a LDMOS device coupled in series with the Schottky diode. In a preferred embodiment, a forward current from the Schottky diode is allowed to flow through the channel of a depletion mode LDMOS t... | 10/27/2009 |
| 7535075 | Semiconductor device The semiconductor device includes a first conductive type semiconductor substrate; a Schottky electrode forming a Schottky interface between a surface of the semiconductor substrate and itself; a leakage suppression structure, formed in a surface region of the semic... | 05/19/2009 |
| 7485941 | Cobalt silicide schottky diode on isolated well A Schottky diode is formed on an isolated well (e.g., a P-well formed in a buried N-well), and utilizes cobalt silicide (CoSi2) structures respectively formed on heavily doped and lightly doped regions of the isolated well to provide the Schottky barrier ... | 02/03/2009 |
| 7432579 | Semiconductor device with horizontal MOSFET and Schottky barrier diode provided on single substrate A MOS field-effect transistor includes a semiconductor substrate of a first-conductivity type, a semiconductor layer of the first-conductivity type, a source region of a second-conductivity type, a first drain region of the second-conductivity type, a resurf layer o... | 10/07/2008 |
| 7429523 | Method of forming schottky diode with charge balance structure a Schottky diode having a semiconductor region is formed as follows. A plurality of charge control electrodes are formed in the semiconductor region so as to influence an electric field in the semiconductor region, wherein at least two of the charge control electrod... | 09/30/2008 |
| 7402852 | Charge coupled device having a back electrode A charge coupled device (CCD) is disclosed which has a semiconductor body (20) comprising polymer or oligomer semiconductor material in place of the conventional silicon. A back electrode (22) of the device is electrically coupled to the semi-conductor... | 07/22/2008 |
| 7388271 | Schottky diode with minimal vertical current flow A method of forming a rectifying diode. The method comprises providing a first semiconductor region of a first conductivity type and having a first dopant concentration and forming a second semiconductor region in the first semiconductor region. The second semicondu... | 06/17/2008 |
| 7359672 | Apparatus and method for frequency conversion An apparatus for frequency up conversion and down conversion using frequency multiplier circuits. The frequency multiplier circuits receive a lower frequency signal and are operated in a forward direction to provide a higher frequency output. The same frequency mult... | 04/15/2008 |
| 7345350 | Process and integration scheme for fabricating conductive components, through-vias and semiconductor components including conductive through-wafer vias A method for forming a conductive via in a semiconductor component is disclosed. The method includes providing a substrate having a first surface and an opposing, second surface. At least one hole is formed in the substrate extending between the first surface and th... | 03/18/2008 |
| 7323402 | Trench Schottky barrier diode with differential oxide thickness A fabrication process for a trench Schottky diode with differential oxide thickness within the trenches includes forming a first nitride layer on a substrate surface and subsequently forming a plurality of trenches in the substrate including, possibly, a termination... | 01/29/2008 |
| 7312510 | Device using ambipolar transport in SB-MOSFET and method for operating the same A device using an ambipolar transport of an SB-MOSFET and a method for operating the same are provided. The SB-MOSFET includes: a silicon channel region; a source and a drain contacted on both sides of the channel region and formed of material including metal layer;... | 12/25/2007 |
| 7294901 | Semiconductor device with improved resurf features including trench isolation structure A p impurity region (3) defines a RESURF isolation region in an n− semiconductor layer (2). A trench isolation structure (8a) and the p impurity region (3) together define a trench isolation region in the n− | 11/13/2007 |
| 7238976 | Schottky barrier rectifier and method of manufacturing the same A Schottky barrier rectifier, in accordance with embodiments of the present invention, includes a first conductive layer and a semiconductor. The semiconductor includes a first doped region, a second doped region and a plurality of third doped regions. The second do... | 07/03/2007 |
| 7211865 | Silicided body contact SOI device A semiconductor device includes a dielectric layer, a semiconductor layer provided above the dielectric layer, a gate dielectric layer provided above the semiconductor layer, a gate electrode provided above the gate dielectric layer, a source region and a drain regi... | 05/01/2007 |
| 7199442 | Schottky diode structure to reduce capacitance and switching losses and method of making same A SiC Schottky barrier diode (SBD) is provided having a substrate and two or more epitaxial layers, including at least a thin, lightly doped N-type top epitaxial layer, and an N-type epitaxial layer on which the topmost epitaxial layer is disposed. Multiple epitaxia... | 04/03/2007 |
| 7193291 | Organic Schottky diode An organic Schottky diode includes a polycrystalline organic semiconductor layer with a rectifying contact on one side of the layer. An amorphous doped semiconductor layer is placed on the other side of the polycrystalline organic semiconductor layer, and it acts as... | 03/20/2007 |
| 7176532 | CMOS active pixel sensor with improved dark current and sensitivity An active pixel sensor which provides reduced dark current, improved sensitivity, and improved modulation transfer function. An N well, surrounded by a P well is formed in a P type epitaxial substrate. A P+ region is formed extending from within the P wel... | 02/13/2007 |
| 7145482 | Method, system, and apparatus for remote data calibration of a RFID tag population A method, system, and apparatus for remotely calibrating data symbols received by a radio frequency identification (RFID) tag population are described. Tags are interrogated by a reader, which may be located in a network of readers. The reader transmits data symbols... | 12/05/2006 |
| 7141860 | LDMOS transistor An LDMOS transistor has a Schottky diode inserted at the center of a doped region of the LDMOS transistor. A Typical LDMOS transistor has a drift region in the center. In this case a Schottky diode is inserted at the center of this drift region which has the effect ... | 11/28/2006 |
| 7129558 | Chip-scale schottky device A chip-scale schottky package which has at least one cathode electrode and at least one anode electrode disposed on only one major surface of a die, and solder bumps connected to the electrode for surface mounting of the package on a circuit board. ... | 10/31/2006 |
| 7115977 | Multi-chip package type semiconductor device A multi-chip package type semiconductor device includes an insulating substrate having first and second conductive patterns thereon, a first semiconductor chip on the insulating substrate and having a first terminal pad and a relay pad isolated from the first termin... | 10/03/2006 |
| 7102207 | Semiconductor device having rectifying action A semiconductor device including a base layer of a first conductivity type having a first main surface and a second main surface opposite the first main surface, a first main electrode layer connected to the first main surface, control regions arranged inside groove... | 09/05/2006 |
| 7078782 | Semiconductor device To attain reduction in size of a semiconductor device having a power transistor and an SBD, a semiconductor device according to the present invention comprises a first region and a second region formed on a main surface of a semiconductor substrate; plural first con... | 07/18/2006 |
| 7078770 | Fully depleted silicon-on-insulator CMOS logic A extractor implanted region is used in a silicon-on-insulator CMOS memory device. The extractor region is reversed biased to remove minority carriers from the body region of partially depleted memory cells. This causes the body region to be fully depleted without t... | 07/18/2006 |
| 7061066 | Schottky diode using charge balance structure In accordance with an embodiment of the invention, a Schottky diode includes a metal layer in contact with a semiconductor region to form a Schottky barrier therebetween. A first trench extends in the semiconductor region. The first trench includes at least one elec... | 06/13/2006 |
| 7023030 | MISFET A metal insulator semiconductor field effect transistor (MISFET) is disclosed comprising a source layer being made with a material having a source band-gap (EG2) and a source mid-gap value (EGM2), the source layer having a source Fermi-Level (EF2 | 04/04/2006 |
| 7019377 | Integrated circuit including high voltage devices and low voltage devices An integrated circuit includes a high voltage Schottky barrier diode and a low voltage device. The Schottky barrier diode includes a lightly doped p-well as guard ring while the low voltage devices are built using standard, more heavily doped p-wells. By using a pro... | 03/28/2006 |
| 6979874 | Semiconductor device and method of manufacturing thereof A plurality of p anode regions are formed at one surface of an n− substrate. A trench is formed in each p anode region. An ohmic junction region is formed between an anode metallic electrode and the p anode region. The p anode region has a minimum impur... | 12/27/2005 |
