Did You Know...
...that while attempting to develop a super strong glue, 3M employee Spencer Silver accidentally developed a glue that was so weak it would barely hold two pieces of paper together? However, his colleague Art Fry needed the glue. Fry sang with his church choir and marked the pages of his hymnal with small scraps of paper that often fell out. He used Silver's glue to hold the papers in place. Today we call this invention Post-it Notes.
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| Number | Title | Issue Date |
| 8063465 | Backside illuminated imaging sensor with vertical pixel sensor A backside illuminated imaging sensor includes a vertical stacked sensor that reduces cross talk by using different silicon layers to form photodiodes at separate levels within a stack (or separate stacks) to detect different colors. Blue light-, green light-, and r... | 11/22/2011 |
| 8049293 | Solid-state image pickup device, electronic apparatus using such solid-state image pickup device and method of manufacturing solid-state image pickup device A back-illuminated type solid-state image pickup device (1041) includes read circuits (Tr1, Tr2) formed on one surface of a semiconductor substrate (1042) to read a signal from a photo-electric conversion element (PD) formed on the semico... | 11/01/2011 |
| 7973380 | Method for providing metal extension in backside illuminated sensor for wafer level testing A method of providing metal extension in a backside illuminated image sensor is provided in the present disclosure. In one embodiment, a first set of pads and a second set of pads, and a metal layer are provided in a backside illuminated image sensor. The first set ... | 07/05/2011 |
| 7939903 | Photodetector for backside-illuminated sensor A backside-illuminated sensor including a semiconductor substrate. The semiconductor substrate has a front surface and a back surface. A plurality of pixels are formed on the front surface of the semiconductor substrate. At least one pixel includes a photogate struc... | 05/10/2011 |
| 7936039 | Backside illuminated CMOS image sensor with photo gate pixel A pixel for a CMOS photo sensor with increased full well capacity is disclosed. The pixel having a photosensitive element, a photo gate, potential well and a readout circuit. The photosensitive element having a front side and a back side, for releasing charge when l... | 05/03/2011 |
| 7893516 | Backside-illuminated imaging device and manufacturing method of the same A backside-illuminated imaging device, which performs imaging by illuminating light from a back side of a semiconductor substrate to generate electric charges in the semiconductor substrate based on the light and reading out the electric charges from a front side of... | 02/22/2011 |
| 7888763 | Backside illuminated imaging sensor with improved infrared sensitivity A backside illuminated imaging sensor includes a semiconductor layer and an infrared detecting layer. The semiconductor layer has a front surface and a back surface. An imaging pixel includes a photodiode region formed within the semiconductor layer. The infrared de... | 02/15/2011 |
| 7843028 | Electro-optical device, semiconductor device, display device, and electronic apparatus having the same An electro-optical device includes: a panel having a display area in which an electro-optical material is interposed between first and second substrates; and a light detection unit disposed on the first or second substrate to detect illuminance of ambient light of t... | 11/30/2010 |
| 7696595 | Semiconductor device and method for manufacturing the same With this semiconductor device, the distortion and cracking of a thinned portion of a semiconductor substrate are prevented to enable high precision focusing with respect to a photodetecting unit and uniformity and stability of high sensitivity of the photodetecting... | 04/13/2010 |
| 7656000 | Photodetector for backside-illuminated sensor A backside-illuminated sensor including a semiconductor substrate. The semiconductor substrate has a front surface and a back surface. A plurality of pixels are formed on the front surface of the semiconductor substrate. At least one pixel includes a photogate struc... | 02/02/2010 |
| 7498650 | Backside illuminated CMOS image sensor with pinned photodiode A backside illuminated CMOS image sensor having an silicon layer with a front side and a backside, the silicon layer liberates charge when illuminated from the backside with light, an active pixel circuitry located on the front side of the semiconductor layer, a pin... | 03/03/2009 |
| 7420257 | Backside-illuminated photodetector The present invention provides a back illuminated photodetector having a sufficiently small package as well as being capable of suppressing the scattering of to-be-detected light. A back illuminated photodiode 1 comprises an N-type semiconductor substrate ... | 09/02/2008 |
| 7288825 | Low-noise semiconductor photodetectors A photodetector is formed from a body of semiconductor material substantially surrounded by dielectric surfaces. A passivation process is applied to at least one surface to reduce the rate of carrier generation and recombination on that surface. Photocurrent is read... | 10/30/2007 |
| 7271468 | High-voltage compatible, full-depleted CCD A charge coupled device for detecting electromagnetic and particle radiation is described. The device includes a high-resistivity semiconductor substrate, buried channel regions, gate electrode circuitry, and amplifier circuitry. For good spatial resolution and high... | 09/18/2007 |
| 7262498 | Assembly with a ring and bonding pads formed of a same material on a substrate An assembly includes a substrate, a device coupled to the substrate; a ring formed on the substrate; and one or more bonding pads formed on the substrate, wherein the ring and bonding pads are formed of a same material. ... | 08/28/2007 |
| 7234864 | Measurement of multi-channel cold junction temperature The cold junction temperature of the channels on a multi-channel terminal block are accurately determined for each terminal pair without affixing a thermistor to each terminal. One embodiment provides accurate cold junction measurement of a six channel device (12 te... | 06/26/2007 |
| 7235852 | Integrated variable optical attenuator A variable optical attenuator. A PIN structure is integrated with an optical detector such as a PIN diode or an APD diode. When the PIN structure is forward biased, the light signal is not affected and is detected by the optical detector. When the PIN structure is r... | 06/26/2007 |
| 7214971 | Semiconductor light-receiving device A semiconductor light-receiving device has a substrate including upper, middle and lower regions in its front side. A p-type layer on the lower region has a top surface including a portion on a level with the middle region. An electrode covers at least part of the b... | 05/08/2007 |
| 7161222 | Semiconductor device and semiconductor device fabrication method An SOI layer is formed on a substrate of a semiconductor device, and one or more elements are formed on the SOI layer. One or more grooves are formed in a substrate of the semiconductor device by removing part of the substrate. The groove is formed directly below an... | 01/09/2007 |
| 7157742 | Integrated circuit device An integrally packaged optronic integrated circuit device (310) including an integrated circuit die (322) containing at least one of a radiation emitter and radiation receiver and having top and bottom surfaces formed of electrically insulative and mec... | 01/02/2007 |
| 7154156 | Solid-state imaging device and method for producing the same A solid-state imaging device includes: a base made of an insulation material and having a frame form in planar shape with an aperture formed at an inner region; a plurality of wirings provided on one surface of the base and extending toward an outer periphery of the... | 12/26/2006 |
| 7112465 | Fabrication methods for ultra thin back-illuminated photodiode array Ultra thin back-illuminated photodiode array structures and fabrication methods. The photodiode arrays are back illuminated photodiode arrays having a substrate of a first conductivity type having first and second surfaces, the second surface having a layer of the f... | 09/26/2006 |
| 7098519 | Avalanche radiation detector The invention relates to an avalanche radiation detector comprising a semiconductor substrate (HK) with a front side (VS) and a back side (RS), an avalanche region (AB) which is arranged in the semiconductor substrate (HK) on the front side (VS) of the semiconductor... | 08/29/2006 |
| 7086134 | Alignment apparatus and method for aligning stacked devices An apparatus for passively aligning first and second substrates having micro-components disposed thereon when the substrates do not include patterned surfaces which face each other. The apparatus includes a first depression which cooperates with an alignment sphere ... | 08/08/2006 |
| 7079776 | Optical signal transmission board and apparatus An individual optical signal transmission substrate includes an optical signal transmission area where at least one of a light emitting element for sending an optical signal to other optical signal transmission substrates or a light receiving element for receiving a... | 07/18/2006 |
| 7042060 | Backside thinning of image array devices Backthinning in an area selective manner is applied to imaging sensors 12 for use in electron bombarded devices. A further arrangement results in an array of collimators 51 aligned with pixels 42 or groups of pixels providing improved image cont... | 05/09/2006 |
| 6995441 | Integrated circuits using optical waveguide interconnects formed through a semiconductor wafer and methods for forming same An integrated circuit with a number of optical waveguides that are formed in high aspect ratio holes. The high aspect ratio holes extend through a semiconductor wafer. The optical waveguides include a highly reflective material that is deposited so as to line an inn... | 02/07/2006 |
| 6995443 | Integrated circuits using optical fiber interconnects formed through a semiconductor wafer An integrated circuit with a number of optical fibers that are formed in high aspect ratio holes. The high aspect ratio holes extend through a semiconductor wafer. The optical fibers include a cladding layer and a core formed in the high aspect ratio hole. These opt... | 02/07/2006 |
| 6972469 | Lateral PIN diode and method for processing same A PIN diode includes a first p-area, an n-area, and in between an intermediate area on a first surface of a substrate, wherein a doping concentration of the intermediate area is lower than a doping concentration of the p-area and lower than a doping concentration of... | 12/06/2005 |
| 6969839 | Backthinned CMOS sensor with low fixed pattern noise This invention deals with the reduction in fixed pattern noise in backthinned CMOS imagers primarily for use in a vacuum environment. Reduction is achieved by effectively shielding the imager. This is done by depositing a conductive layer on the front surface prior ... | 11/29/2005 |
| 6945106 | Mass flowmeter A mass flowmeter of the thermal type, having a planar, thin substrate with a sensing surface that can be brought into direct or indirect contact with a flowing fluid during a measurement, wherein electrically controllable heating elements and temperature sensor elem... | 09/20/2005 |
| 6933489 | Back illuminated photodiode array and method of manufacturing the same Disclosed are a back illuminated photodiode array, which is mass-producible and has an ultra-thin high-performance single-sided electrode structure, and a method of manufacturing the same. Both electrodes of a photodiode on a semiconductor substrate 1, which ... | 08/23/2005 |
| 6930327 | Solid-state imaging device and method of manufacturing the same There are provided a semiconductor substrate 101 on which solid-state imaging devices are formed, and a translucent member 201 provided onto a surface of the semiconductor substrate such that spaces are provided to oppose to light receiving areas of th... | 08/16/2005 |
| 6924541 | Semiconductor photodetection device A semiconductor photodetection device includes a semiconductor structure including an optical absorption layer having a photo-incidence surface on a first side thereof, a dielectric reflecting layer formed on a second side of the semiconductor structure opposite to ... | 08/02/2005 |
| 6873034 | Solid-state imaging device, method for producing same, and mask The present invention provides a solid-state imaging device comprising: a transparent substrate transmitting light therethrough; a first chip including a solid-state imaging element having a light receiving portion; a first resin providing airtight sealing between t... | 03/29/2005 |
| 6872992 | Semiconductor device for detecting wide wavelength ranges A CCD unit is provided on the surface side of a thin shape section that is formed on a first substrate. In the CCD unit, first cells are provided and disposed in the form of an array in a direction in which the thin shape section extends. An InGaAs photodiode unit i... | 03/29/2005 |
| 6835990 | Semiconductor light receiving element A semiconductor light receiving element has a semiconductor portion. The semiconductor portion includes a substrate, a light detecting portion, and a filter portion. The substrate, the light detecting portion, and the filter portion are provided sequentially in a di... | 12/28/2004 |
| 6815789 | Semiconductor electronic device and method of manufacturing thereof A semiconductor electronic device includes a die of semiconductor material and a support. The die of semiconductor material includes an integrated electronic circuit and a plurality of contact pads associated with the electronic circuit and connected electrically to... | 11/09/2004 |
| 6777769 | Light-receiving element, light-receiving element array and light-receiving module and method for high frequency characteristics A light-receiving element, comprises an absorption layer formed on a semiconductor substrate, a window layer formed on the absorption layer, a first electrode formed on the window layer, a second electrode formed on the window layer and electrically connected to the... | 08/17/2004 |
| 6753587 | Semiconductor photo detecting device and its manufacturing method A high response speed semiconductor photo detecting device having a thin photo absorption layer which avoids an optical efficiency loss. The semiconductor photo detecting devices are formed on a semiconductor substrate having an inclined cleavage face to a principal... | 06/22/2004 |
