Did You Know...
...that the Eveready Battery began as an invention called the "electric flowerpot," which was a tube with a battery and light bulb inside? The idea was to fasten this gizmo to the side of a flowerpot so it would illuminate the flowers from the bottom. The idea died on the vine and the businessman who licensed the flower pot, Conrad Huber, was left with a pile of useless tubes -- until he found a way to market them as batteries to light the world!
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| Number | Title | Issue Date |
| 7420215 | Transparent conductive film, semiconductor device and active matrix display unit A transparent conductive film substantially made from In2O3, SnO2 and ZnO, having a molar ratio In/(In+Sn+Zn) of 0.65 to 0.8 and also a molar ratio Sn/Zn of 1 or less: The transparent conductive film has a favorable electric contact ... | 09/02/2008 |
| 7368796 | Metal gate engineering for surface P-channel devices A semiconductor device, such as a CMOS device, having gates with a high work function in PMOS regions and low work functions in NMOS regions and a method of producing the same. Using nitrogen implantation or plasma annealing, a low work function W (or CoSix | 05/06/2008 |
| 7358585 | Silicon-based Schottky barrier infrared optical detector A silicon-based IR photodetector is formed within a silicon-on-insulator (SOI) structure by placing a metallic strip (preferably, a silicide) over a portion of an optical waveguide formed within a planar silicon surface layer (i.e., “planar SOI layer”) of the SO... | 04/15/2008 |
| 7214988 | Metal oxide semiconductor transistor A method for forming a metal oxide semiconductor (MOS) transistor is provided. First, a gate structure is formed over a substrate. Then, offset spacers are formed on respective sidewalls of the gate structure. A first ion implantation process is performed to form a ... | 05/08/2007 |
| 7183221 | Method of fabricating a semiconductor having dual gate electrodes using a composition-altered metal layer Fabricating a semiconductor includes depositing a metal layer outwardly from a dielectric layer and forming a mask layer outwardly from a first portion of the metal layer. Atoms are incorporated into an exposed second portion of the metal layer to form a composition... | 02/27/2007 |
| 7176537 | High performance CMOS with metal-gate and Schottky source/drain A semiconductor device having a metal/metal silicide gate and a Schottky source/drain and a method of forming the same are provided. The semiconductor device includes a gate dielectric overlying a semiconductor substrate, a metal or metal silicide gate electrode hav... | 02/13/2007 |
| 7030430 | Transition metal alloys for use as a gate electrode and devices incorporating these alloys Embodiments of a transition metal alloy having an n-type or p-type work function that does not significantly shift at elevated temperature. The disclosed transition metal alloys may be used as, or form a part of, the gate electrode in a transistor. Methods of formin... | 04/18/2006 |
| 7005716 | Dual metal gate process: metals and their silicides Methods for forming dual-metal gate CMOS transistors are described. An NMOS and a PMOS active area of a semiconductor substrate are separated by isolation regions. A metal layer is deposited over a gate dielectric layer in each active area. Silicon ions are implante... | 02/28/2006 |
| 6846729 | Process for counter doping N-type silicon in Schottky device Ti silicide barrier A Schottky diode is adjusted by implanting an implant species by way of a titanium silicide Schottky contact and driving the implant species into the underlying silicon substrate by a rapid anneal. The implant is at a low energy, (e.g. about 10 keV) and at a low dos... | 01/25/2005 |
| 6831343 | Metal gate engineering for surface p-channel devices A semiconductor device, such as a CMOS device, having gates with a high work function in PMOS regions and low work functions in NMOS regions and a method of producing the same. Using nitrogen implantation or plasma annealing, a low work function W (or CoSix | 12/14/2004 |
| 6798034 | Technique for suppression of edge current in semiconductor devices A passive mechanism suppresses injection, into any active guard regions interposed between the edge of a photodiode array chip and the outer photodiode pixels or into the outer pixels themselves, of minority carrier current generated in the physically disrupted regi... | 09/28/2004 |
| 6756651 | CMOS-compatible metal-semiconductor-metal photodetector A novel photodetector CMOS-compatible photodetector is disclosed in which photo-generation of carriers (electrons) is carried out in the metal of the electrodes, rather than as electron-hole pairs in the semiconductor on which the metal electrodes are deposited. The... | 06/29/2004 |
| 6734515 | Semiconductor light receiving element A semiconductor light receiving element having a light receiving layer (1) formed from a GaN group semiconductor, and an electrode (2) formed on one surface of the light receiving layer as a light receiving surface (1a) in such a way that... | 05/11/2004 |
| 6608360 | One-chip micro-integrated optoelectronic sensor This disclosure describes one-chip micro-integrated optoelectronic sensors and methods for fabricating and using the same. The sensors may include an optical emission source, optical filter and a photodetector fabricated on the same transparent substrate ... | 08/19/2003 |
| 6597050 | Method of contacting a silicide-based schottky diode and diode so formed A method of contacting a silicide-based Schottky diode including the step of providing a contact to the silicide that is fully bordered with respect to an internal edge of the guard ring area. A Schottky diode having silicide contacting a guard ring of th... | 07/22/2003 |
| 6555424 | Thin film transistor with sub-gates and schottky source/drain and a manufacturing method of the same The present invention discloses a thin film transistor with sub-gates and Schottky source/drain and a method of manufacturing the same. Doping of source/drain, and the following annealing steps used conventionally are omitted and the complexity of process... | 04/29/2003 |
| 6483164 | Schottky barrier diode A Schottky electrode is formed of an alloy, which is composed of two or more kinds of metal materials in combinations that provide different Schottky barrier heights with respect to a semiconductor and that form no intermetallic compound.... | 11/19/2002 |
| 6420643 | Silicon thin-film, integrated solar cell, module, and methods of manufacturing the same A polycrystalline film of silicon including silicon grains having an aspect ratio, d/t, of more than 1:1, wherein "d" is the grain diameter and "t" is the grain thickness. The polycrystalline film of silicon can be used to form an electronic device, such ... | 07/16/2002 |
| 6373076 | Passivated silicon carbide devices with low leakage current and method of fabricating Semiconductor power devices with improved electrical characteristics are disclosed including rectifying contacts on a specially prepared semiconductor surface with little or no additional exposure to other chemical treatments, with oxide passivation and e... | 04/16/2002 |
| 6211560 | Voltage tunable schottky diode photoemissive infrared detector PtSi/Si Schottky diode infrared detectors are currently being used in large-area focal plane arrays for imaging in the 3-5 micron atmospheric transmission window. Their photoresponse cuts off at about 6 microns, beyond which they cannot detect infrared ra... | 04/03/2001 |
| 5859464 | Optoelectronic diode and component containing same An optoelectronic component has an Al2 O3 or Si substrate having a surface on which a buried CoSi2 layer is provided, a Si layer overlying the buried CoSi2 layer. A metal layer on a portion of this latter Si lay... | 01/12/1999 |
| 5449924 | Photodiode having a Schottky barrier formed on the lower metallic electrode A photodiode capable of obtaining a sufficient photo current/dark ratio at both a forward bias state and a reverse bias state. The photodiode includes a glass substrate, an aluminum film formed as a lower electrode over the glass substrate, an alumina fil... | 09/12/1995 |
| 5055901 | Multi-layer metal silicide infrared detector The efficiency of a metal silicide infrared (10) in greatly enhanced by depositing on the substrate (14) a stack (30) of alternating metal silicide (12,24) and silicon layers (22). The metal silicide layers (12,24) are connected to each other and to a con... | 10/08/1991 |
| 4878097 | Semiconductor photoelectric conversion device and method for making same A non-single-crystal semiconductor photoelectric conversion device has a laminate member composed of a pair of first and second PIN structures and a transparent conductive layer interposed therebetween, the first PIN structure being disposed on the side t... | 10/31/1989 |
| 4782377 | Semiconducting metal silicide radiation detectors and source Semiconducting metal silicide electromagnetic radiation sources and detectors have a thin film of semiconducting metal silicide grown or deposited on a silicon wafer. The metals are chosen from a group consisting of iron, iridium, manganese, chromium, rhe... | 11/01/1988 |
| 4772931 | Interdigitated Schottky barrier photodetector A semiconductor photodetector is formed of interdigitated, metal-semiconductor-metal electrodes disposed on a surface of semi-insulating semiconductor material, gallium arsenide. Radiation such as infra-red or visible light is converted to an electric cur... | 09/20/1988 |
| 4531055 | Self-guarding Schottky barrier infrared detector array A two dimensional focal plane array of Schottky photodiodes on a silicon substrate for infrared imaging. The array is designed for mating with multiplexing circuitry and has a self-guarding feature wherein adjacent Schottky electrodes act as guard electro... | 07/23/1985 |
