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| Number | Title | Issue Date |
| 8164154 | Low profile Schottky barrier diode for solar cells and solar panels and method of fabrication thereof A low profile high power Schottky barrier bypass diode for solar cells and panels with the cathode and anode electrodes on the same side of the diode and a method of fabrication thereof are disclosed for generating a thin chip with both electrodes being on the same ... | 04/24/2012 |
| 8053858 | Integrated latch-up free insulated gate bipolar transistor A lateral Insulated Gate Bipolar Transistor (LIGBT) includes a semiconductor substrate and an anode region in the semiconductor substrate. A cathode region of a first conductivity type in the substrate is laterally spaced from the anode region, and a cathode region ... | 11/08/2011 |
| 7999343 | Semiconductor component with a space-saving edge termination, and method for production of such component An arrangement for use in a semiconductor component includes a semiconductor body and an edge structure. The semiconductor body having a first face, a second face, a first semiconductor zone of a first conductance type, at least one second semiconductor zone of a se... | 08/16/2011 |
| 7859076 | Edge termination for semiconductor device A semiconductor device has active region (30) and edge termination region (32) which includes a plurality of floating field regions (46). Field plates (54) extend in the edge termination region (32) inwards from contact holes (5... | 12/28/2010 |
| 7642615 | Semiconductor device with a noise prevention structure A semiconductor device including a substrate of a first semiconductor type with a pad region and a noise prevention structure in the substrate, on least one side of the pad region. The device further includes the substrate structure, a pad, and a dielectric layer th... | 01/05/2010 |
| 7508045 | SiC Schottky barrier semiconductor device A semiconductor device includes a first-conductivity-type SiC substrate, a first-conductivity-type SiC semiconductor layer formed on the substrate, whose impurity concentration is lower than that of the substrate, a first electrode formed on the semiconductor layer ... | 03/24/2009 |
| 7420215 | Transparent conductive film, semiconductor device and active matrix display unit A transparent conductive film substantially made from In2O3, SnO2 and ZnO, having a molar ratio In/(In+Sn+Zn) of 0.65 to 0.8 and also a molar ratio Sn/Zn of 1 or less: The transparent conductive film has a favorable electric contact ... | 09/02/2008 |
| 7408206 | Method and structure for charge dissipation in integrated circuits Methods and structures and methods of designing structures for charge dissipation in an integrated circuit on an SOI substrate. A first structure includes a charge dissipation ring around a periphery of the integrated circuit chip and one or more charge dissipation ... | 08/05/2008 |
| 7391093 | Semiconductor device with a guard-ring structure and a field plate formed of polycrystalline silicon film embedded in an insulating film A semiconductor device has a semiconductor device chip with upper and lower terminal electrodes, and upper and lower frames bonded to the upper and lower terminal electrodes, respectively, with solder material, wherein the semiconductor device chip includes: a semic... | 06/24/2008 |
| 7317236 | Semiconductor light-receiving module capable of converting light into current efficiently at light absorbing layer A semiconductor light-receiving module includes a semiconductor light-receiving element and an incident light direction device. The semiconductor light-receiving element includes a substrate, at least a light absorbing layer and an upper cladding layer formed sequen... | 01/08/2008 |
| 7294896 | Photodetector with charge-carrier reflector A photodetector includes a charge carrier collector and a charge carrier concentrator that redirects onto the collector charge carriers that are not initially headed towards the collector. ... | 11/13/2007 |
| 7271468 | High-voltage compatible, full-depleted CCD A charge coupled device for detecting electromagnetic and particle radiation is described. The device includes a high-resistivity semiconductor substrate, buried channel regions, gate electrode circuitry, and amplifier circuitry. For good spatial resolution and high... | 09/18/2007 |
| 7262400 | Image sensor device having an active layer overlying a substrate and an isolating region in the active layer An image sensing device. An active layer is disposed overlying a substrate, wherein the active layer has different conductivity with the substrate. A plurality of photodiodes is disposed in the active layer. An isolating region is interposed between two adjacent pho... | 08/28/2007 |
| 7259377 | Diode design to reduce the effects of radiation damage A photodetector for X-ray applications includes a photodiode at each pixel location that is gated to reduce leakage of charge from the photodiode. A gate layer may be disposed around the entire peripheral edge of the detector, and maintained at a common potential wi... | 08/21/2007 |
| 7253487 | Integrated circuit chip having a seal ring, a ground ring and a guard ring An integrated circuit chip is provided. The chip includes a silicon substrate, a circuit, a seal ring, a ground ring and a guard ring. The circuit is formed on the silicon substrate and has an input/output (I/O) pad. The seal ring is formed on the silicon substrate ... | 08/07/2007 |
| 7241702 | Processing method for annealing and doping a semiconductor A treatment method of annealing and doping a semiconductor including irradiating a semiconductor layer (13) formed on a substrate (11) with a laser beam (a), thereby melting at least a part of the semiconductor layer; irradiating a target material (... | 07/10/2007 |
| 7233046 | Semiconductor device and fabrication method thereof A semiconductor device and fabrication method thereof restrains an amplified current between input voltage Vin and ground voltage Vss, and first and second n-wells are biased into internal voltage sources, whereby the current-voltage characteristic of the input pad ... | 06/19/2007 |
| 7217984 | Divided drain implant for improved CMOS ESD performance A divided drain implant structure for transistors used for electrostatic discharge protection is disclosed. At least two transistors are formed close to each other on a substrate with their gates and sources coupled together and with the drains placed next to each o... | 05/15/2007 |
| 7187052 | Photoelectric conversion apparatus and image pick-up system using the photoelectric conversion apparatus A primary object of the present invention is to provide a photoelectric conversion apparatus with less leak current in a floating diffusion region. In order to obtain the above object, a photoelectric conversion apparatus according to the present invention includes ... | 03/06/2007 |
| 7157742 | Integrated circuit device An integrally packaged optronic integrated circuit device (310) including an integrated circuit die (322) containing at least one of a radiation emitter and radiation receiver and having top and bottom surfaces formed of electrically insulative and mec... | 01/02/2007 |
| 7151302 | Method and apparatus for maintaining topographical uniformity of a semiconductor memory array A semiconductor device includes a memory array having a plurality of non-volatile memory cells. Each non-volatile memory cell of the plurality of non-volatile memory cells has a gate stack. The gate stack includes a control gate and a discrete charge storage layer s... | 12/19/2006 |
| 7141778 | Semiconductor device, optoelectronic board, and production methods therefor The semiconductor device of the present invention comprises an optical transmission region, and a light receiving part for converting light propagating through the optical transmission region to an electrical signal, wherein the optical transmission region comprises... | 11/28/2006 |
| 7129558 | Chip-scale schottky device A chip-scale schottky package which has at least one cathode electrode and at least one anode electrode disposed on only one major surface of a die, and solder bumps connected to the electrode for surface mounting of the package on a circuit board. ... | 10/31/2006 |
| 7102678 | Image reading device with reduced variations among signal levels In an image reading device having a plurality of photoelectric conversion elements formed in one or more rows on an IC chip and a conductor layer having openings formed therein for limiting light striking the photoelectric conversion elements, a conductor having sub... | 09/05/2006 |
| 7098520 | Semiconductor memory device having pick-up structure A semiconductor memory device includes a first transistor area doped by a first-type dopant for having a plurality of second-type transistors; a second transistor area doped by a second-type dopant for having a plurality of first-type transistors; a first guardring ... | 08/29/2006 |
| 7095087 | Semiconductor device and fabrication method thereof A semiconductor device and fabrication method thereof restrains an amplified current between input voltage Vin and ground voltage Vss, and first and second n-wells are biased into internal voltage sources, whereby the current-voltage characteristic of the input pad ... | 08/22/2006 |
| 7084044 | Optoelectronic device and method of manufacture thereof The present invention provides an optoelectronic device and a method of manufacture thereof. In one embodiment, the method of manufacturing the optoelectronic device may include creating a multilayered optical substrate and then forming a self aligned dual mask over... | 08/01/2006 |
| 7053453 | Substrate contact and method of forming the same A substrate contact and semiconductor chip, and methods of forming the same. The substrate contact is employable with a semiconductor chip formed from a semiconductor substrate and includes a seal ring region about a periphery of an integrated circuit region. In one... | 05/30/2006 |
| 7053458 | Suppressing radiation charges from reaching dark signal sensor An image sensor and method is provided to improve the measurement of a dark signal reference while substantially suppressing radiation charges that enter an active area of the image sensor from reaching a shielded dark signal detector. In one implementation, dark si... | 05/30/2006 |
| 7042058 | Image sensor with guard ring for suppressing radiation charges An image sensor and method is provided to improve the measurement of a dark signal reference while substantially suppressing radiation charges that enter an active area of the image sensor from reaching a shielded dark signal detector. In one implementation, dark si... | 05/09/2006 |
| 7026701 | Schottky barrier photodetectors A Schottky barrier photodetector comprises a waveguide structure formed by a thin strip of material having a relatively high free charge carrier density, for example a conductor or certain classes of highly-doped semiconductor, surrounded by material having a relati... | 04/11/2006 |
| 6998619 | Position sensitive solid state detector with internal gain The present invention is a solid state detector that has internal gain and incorporates a special readout technique to determine the input position at which a detected signal originated without introducing any dead space to the active area of the device. In a prefer... | 02/14/2006 |
| 6998595 | Color filter configuration for a silicon wafer to be diced into photosensitive chips An architecture and manufacturing method for photosensitive chips, such as used in office equipment and digital cameras, involves creating grooves between chip areas in a wafer, and then placing a light-transmissive planar layer over the main surface of the wafer. T... | 02/14/2006 |
| 6995629 | Center-tap termination circuit and printed circuit board having the same A center-tap termination circuit which includes two resistors having the same resistance, which are serially connected between forward and return transmission lines, where the forward and return transmission lines constitute a differential signal transmission line. ... | 02/07/2006 |
| 6940131 | MOS ESD CDM clamp with integral substrate injection guardring and method for fabrication The present invention includes a MOS device (100) that has a P-type substrate (102) and an N-type drain region (104) formed within the substrate (102). An annular N-type source region (106) generally surrounds the drain region (... | 09/06/2005 |
| 6936808 | Semiconductor device, optoelectronic board, and production methods therefor The semiconductor device of the present invention comprises an optical transmission region, and a light receiving part for converting light propagating through the optical transmission region to an electrical signal, wherein the optical transmission region comprises... | 08/30/2005 |
| 6928205 | Optical waveguide device, layered substrate and electronics using the same An optical waveguide device that comprises an optical waveguide layer and a light-receiving element, wherein the optical waveguide layer is provided with a light direction-altering means for altering the direction of light propagated in the optical waveguide layer a... | 08/09/2005 |
| 6919609 | High speed detectors having integrated electrical components An opto-electronic device configured as a photodetector has a capacitor and/or resistor monolithically formed on a surface of the photodetector. The capacitor capacitively couples the AC ground of the photodetector to the bias terminal of the photodetector. The on c... | 07/19/2005 |
| 6909160 | Semiconductor light-receiving module capable of converting light into current efficiently at light absorbing layer A semiconductor light-receiving module includes a semiconductor light-receiving element and an incident light direction device. The semiconductor light-receiving element includes a substrate, at least a light absorbing layer and an upper cladding layer formed sequen... | 06/21/2005 |
| 6906355 | Semiconductor device A semiconductor device having guard grooves uniformly filled with a semiconductor filler is provided. The four corners of a rectangular ring-shaped guard groove meet at right angles, and outer and inner auxiliary diffusion regions both rounded are connected to the f... | 06/14/2005 |
