Class 257/451 - Responsive to light having lower energy (i.e., longer wavelength) than forbidden band gap energy of semiconductor (e.g., by excitation of carriers from metal into semiconductor)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter wherein the device responds to light having
No. of patents: 62
Last issue date: 09/02/2008

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Number	Title	Issue Date
7420215	Transparent conductive film, semiconductor device and active matrix display unit A transparent conductive film substantially made from In2O3, SnO2 and ZnO, having a molar ratio In/(In+Sn+Zn) of 0.65 to 0.8 and also a molar ratio Sn/Zn of 1 or less: The transparent conductive film has a favorable electric contact ...	09/02/2008
7400021	Thin film optical detectors for retinal implantation and methods for making and using same The present invention provides a method for capturing optical micro detectors for improved surgical handling during implantation into an eye comprising the steps of providing an optically active thin film heterostructure on a soluble substrate; forming an array comp...	07/15/2008
7378616	Heating apparatus and method for semiconductor devices A heating apparatus and method for heating a semiconductor device during bonding of electrical contacts onto the device is provided, which includes a heating plate that is provided for heating the semiconductor device and a layer of compliant material extending over...	05/27/2008
7349603	Optical arrangement with two optical inputs/outputs and production methods Optical arrangement comprising two parallel plates each with a through-hole forming an optical input/output with a given optical axis and one at least partly optical component placed between the plates, the component and the first plate comprising first fastening st...	03/25/2008
7320896	Infrared radiation detector Electronic devices are disclosed that may be used for infrared radiation detection. An example electronic device includes a substrate, a transistor included in the substrate and a silicon-germanium (Si—Ge) structural layer coupled with the transistor. The structur...	01/22/2008
7317237	Photovoltaic conversion device and method of manufacturing the device There is disclosed a photovoltaic conversion device constructed using a p-type crystalline silicon substrate 404 doped with boron, which comprises a bulk substrate region 404, regions other than the bulk substrate region including an n-type region 4...	01/08/2008
7202899	Method to prevent white pixels in a CMOS image sensor A method and system for preventing white pixel difficulties resulting from undesired current induced in an image sensor having a photodiode and a depletion region therein. The photodiode is isolated in a pixel layout for an image sensor. A depletion region is config...	04/10/2007
7176111	Method for depositing polycrystalline SiGe suitable for micromachining and devices obtained thereof Method and apparatus to obtain as-deposited polycrystalline and low-stress SiGe layers. These layers may be used in Micro Electro-Mechanical Systems (MEMS) devices or micromachined structures. Different parameters are analysed which effect the stress in a polycrysta...	02/13/2007
7170126	Structure of vertical strained silicon devices A trench capacitor vertical-transistor DRAM cell in a SiGe wafer compensates for overhang of the pad nitride by forming an epitaxial strained silicon layer on the trench walls that improves transistor mobility, removes voids from the poly trench fill and reduces res...	01/30/2007
7075081	Method of fabrication of an infrared radiation detector and infrared detector device A method of controlling an internal stress in a polycrystalline silicon-germanium layer deposited on a substrate. The method includes selecting a deposition pressure that is at or below atmospheric pressure and selecting a deposition temperature that is no greater t...	07/11/2006
7064362	Photodetector of an image sensor A photodetector formed in monolithic form including a first active area of doped single-crystal silicon corresponding to first and second photodiodes having the same surface area as two charge transfer MOS transistors, and as one storage diode; a second active area ...	06/20/2006
7038227	Infrared emitter embodied as a planar emitter A radiant element which is heated on its rear side by a burning fluid-air mixture and whose front side emits the infrared radiation. The radiant element is produced from a highly heat resistant material which contains more than 50% by weight of a metal silicide, pre...	05/02/2006
7026701	Schottky barrier photodetectors A Schottky barrier photodetector comprises a waveguide structure formed by a thin strip of material having a relatively high free charge carrier density, for example a conductor or certain classes of highly-doped semiconductor, surrounded by material having a relati...	04/11/2006
7008805	Optical device and method of manufacture thereof The present invention provides an optical device and a method of manufacture thereof. In one embodiment, the method of manufacturing the optical device may include isolating an end of a first layer from a cladding layer located over a mesa structure that has been fo...	03/07/2006
6956274	TiW platinum interconnect and method of making the same A metallization stack is provided for use as a contact structure in an integrated MEMS device. The metallization stack comprises a titanium-tungsten adhesion and barrier layer formed with a platinum layer formed on top. The platinum feature is formed by sputter etch...	10/18/2005
6952022	Image sensor comprising thin film transistor optical sensor having offset region The present invention relates to an image sensor comprising an amorphous silicon thin-film transistor optical sensor which functions as an image sensor used for an X-ray photography device, a fingerprint recognition apparatus, a scanner, etc., and a method of manufa...	10/04/2005
6913713	Photovoltaic fibers Photovoltaic materials and methods of photovoltaic cell fabrication provide a photovoltaic cell in the form of a fiber. These fibers may be formed into a flexible fabric or textile. ...	07/05/2005
6909161	Photodiode A photodiode has an optical absorption layer composed of a depleted first semiconductor optical absorption layer with a layer width WD and a p-type neutral second semiconductor optical absorption layer with a layer width WA. The ratio between W...	06/21/2005
6661073	Semiconductor infrared detector and method for the production thereof A semiconductor infrared detector includes in the following order: a semiconductor substrate; a layer of electrically insulating material; and patterns formed in a semiconductor layer. The patterns are formed from at least one island that is connected to ...	12/09/2003
6639292	UV light sensing element A UV light sensing element has at least a first electrode and a sensor. The first electrode has a semiconductor containing at least one element selected from Al, Ga and In together with nitrogen or oxygen, and the sensor layer has a semiconductor containi...	10/28/2003
6573581	Reduced dark current pin photo diodes using intentional doping In a semiconductor p-i-n photodiode an undoped absorption region (10) is epitaxially grown between two highly doped regions (14, 16). In prior art lattice matched InGaAs p-i-n photodiodes current epitaxial structures use low InP cap (16) doping (n~2.5-6×...	06/03/2003
6380614	Non-contact type IC card and process for manufacturing same An IC card comprises: a plane coil having respective terminal sections; a semiconductor element arranged at a position not overlapping with the plane coil, the semiconductor element having electrode terminals; means for electrically connecting the respect...	04/30/2002
6262830	Transparent metallo-dielectric photonic band gap structure A transparent metal structure permits the transmission of light over a tunable range of frequencies, for example, visible light, and shields ultraviolet light and all other electromagnetic waves of lower frequencies, from infrared to microwaves and beyond...	07/17/2001
6211560	Voltage tunable schottky diode photoemissive infrared detector PtSi/Si Schottky diode infrared detectors are currently being used in large-area focal plane arrays for imaging in the 3-5 micron atmospheric transmission window. Their photoresponse cuts off at about 6 microns, beyond which they cannot detect infrared ra...	04/03/2001
6107652	Metal-semiconductor-metal photodetector A metal-semiconductor-metal photodetector including an absorbent layer, a barrier layer of greater forbidden band energy on which there are deposited Schottky electrodes and a transition layer of graded composition, the photodetector including a doping pl...	08/22/2000
6051884	Method of forming interconnections in an integrated circuit The invention provides a method for producing wiring and contacts in an integrated circuit including the steps of forming insulated gate components on a semiconductor substrate; applying a photo-reducible dielectric layer to cover the substrate; etching h...	04/18/2000
5977603	Infrared detector and fabrication method thereof In a IR detector and a fabrication method thereof, the IR detector has a insulating thin film (3) made up of insulating material, many semiconductor layers (1) each having an island shape formed on the insulating thin film (3), a forward bias connection s...	11/02/1999
5847931	Contactless integrated circuit card with a conductive polymer antenna An integrated circuit card comprising a card body, an integrated circuit fixed in a cavity of the card body, an antenna extending over a face of the card body and connected to the integrated circuit, and a layer of resin covering the integrated circuit an...	12/08/1998
5796155	Schottky barrier infrared detector array with increased effective fill factor An improvement of the design of Schottky barrier infrared detector (SBIR) arrays, as taught by Roosild, et al. We describe modifications of the detector unit cell design which maximize the fraction of detector electrode area exhibiting full spectral emiss...	08/18/1998
5691563	Silicon metal-semiconductor-metal photodetector Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of t...	11/25/1997
5685919	Method and device for improved photoelectric conversion Efficiency of a photoelectric conversion device is increased by inducing a surface plasmon also on a metallic electrode located on the side of the device where light is incident. Incident He-Ne laser light is refracted by a semicylindrical lens and is inc...	11/11/1997
5648297	Long-wavelength PTSI infrared detectors and method of fabrication thereof Extended cutoff wavelengths of PtSi Schottky infrared detectors in the long wavelength infrared (LWIR) regime have been demonstrated for the first time. This result was achieved by incorporating a 1-nm-thick p+ doping spike at the PtSi/Si interface. The e...	07/15/1997
5598016	Back-illuminated type photoelectric conversion device Disclosed is a photoelectric conversion device in which a photodiode capacitance is increased. A transparent electrode is formed between a reflecting plate and a photodiode constituting a unitary picture element of a CCD image sensor. It is so formed that...	01/28/1997
5565676	Method of driving photoelectric conversion device Disclosed is a photoelectric conversion device in which a photodiode capacitance is increased. A transparent electrode is formed between a reflecting plate and a photodiode constituting a unitary picture element of a CCD image sensor. It is so formed that...	10/15/1996
5550370	Potential sensor employing electrooptic crystal and potential measuring method A high-resistance compound semiconductor 12 is epitaxially grown on a low-resistance compound semiconductor 11 and a dielectric reflecting film 13 is formed thereon, thereby forming a monolithic sensor 10. As the low-resistance compound semiconductor 11, ...	08/27/1996
5483096	Photo sensor A photo sensor comprises a semiconductor substrate, a bipolar photo transistor having an emitter region, a base region and a collector region which is formed in the surface region of the semiconductor substrate, a silicon dioxide formed on the bipolar pho...	01/09/1996
5463494	Extrinsic semiconductor optical filter An optical filter (18) includes a first layer (22) of material having a bandgap and being doped with an impurity having an energy level in the bandgap such that the first layer absorbs optical energy below a first wavelength and transmits optical energy t...	10/31/1995
5449945	Silicon metal-semiconductor-metal photodetector Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of t...	09/12/1995
5434698	Potential sensor employing electrooptic crystal and potential measuring method A high-resistance compound semiconductor 12 is epitaxially grown on a low-resistance compound semiconductor 11 and a dielectric reflecting film 13 is formed thereon, thereby forming a monolithic sensor 10. As the low-resistance compound semiconductor 11, ...	07/18/1995
5373182	Integrated IR and visible detector A radiation detector (1) includes a multi-layered substrate (2,10) having a first major surface, which is a radiation receiving surface, and a second major surface disposed opposite to the first major surface. A first detector is formed adjacent to the fi...	12/13/1994

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Class 257/451 - Responsive to light having lower energy (i.e., longer wavelength) than forbidden band gap energy of semiconductor (e.g., by excitation of carriers from metal into semiconductor)