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| Number | Title | Issue Date |
| 4214916 | Thin film photovoltaic converter and method of preparing same The photovoltaic converter of the present invention comprises a thin film consisting essentially of a lattice of stacked carbon chains comprising alternating single and double bonds deposited on the surface of an electrode transparent to sunlight. The car... | 07/29/1980 |
| 4196438 | Article and device having an amorphous silicon containing a halogen and method of fabrication An amorphous silicon capable of the formation of a semiconductor junction. The amorphous silicon can be fabricated by a glow discharge in a gas atmosphere including hydrogen and a deposition gas. The deposition gas has therein the elements silicon and a h... | 04/01/1980 |
| 4142195 | Schottky barrier semiconductor device and method of making same A first layer of semiconductor device is of doped amorphous silicon prepared by a glow discharge in a mixture of silane and a doping gas. The first layer is on a substrate having good electrical properties. On the first layer and spaced from the substrate... | 02/27/1979 |
| 4139857 | Schottky barrier type solid-state element A Schottky barrier type solid-state element and a method of producing the same, the Schottky barrier type solid-state element comprising a Schottky barrier type element portion consisting of a metallic board and a semiconductor film layer provided on the ... | 02/13/1979 |
| 4127738 | Photovoltaic device containing an organic layer A photovoltaic device for the conversion of light (preferably in the visible spectrum) to electrical current consists of at least two electrodes (one of which must be substantially transparent to the light), each electrode being made of different material... | 11/28/1978 |
| 4121238 | Metal oxide/indium phosphide devices Devices using a transparent conductive layer of indium oxide or indium tin oxide, and a layer of a direct gap semiconductor material have been found to operate as solar cells and as light emitting devices. Exemplary of such devices is an indium tin oxide/... | 10/17/1978 |
| 4105470 | Dye-sensitized Schottky barrier solar cells A low-cost dye-sensitized Schottky barrier solar cell comprised of a substrate of semiconductor with an ohmic contact on one face, a sensitizing dye adsorbed onto the opposite face of the semiconductor, a transparent thin-film layer of a reducing agent ov... | 08/08/1978 |
| 4094751 | Photochemical diodes Photochemical diodes are provided which use light to drive both endoergic and exoergic chemical reactions such that optical energy is converted into chemical energy. The photochemical diodes are typically suspended in a bulk volume matrix of the constitue... | 06/13/1978 |
| 4059461 | Method for improving the crystallinity of semiconductor films by laser beam scanning and the products thereof A method is disclosed for improving the crystallinity of semiconductor films by scanning the surface of such films with a shaped, focused laser beam. The laser is matched to the film so that the beam delivers sufficient energy thereto to heat the film abo... | 11/22/1977 |
| 4057476 | Thin film photovoltaic diodes and method for making same Photovoltaic diodes prepared by the methods of the invention include p-n (or n-p) heterojunction or homojunction diodes as well as Schottky barrier diodes where both elements of the diode comprise thin monocrystalline films of Pb1-x Snx | 11/08/1977 |
| 4053918 | High voltage, high current Schottky barrier solar cell A Schottky barrier solar cell is disclosed, consisting of a layer of wide band gap semiconductor material such as AlGaAs on which a very thin film of semi-transparent metal is deposited to form a Schottky barrier. The layer of the wide band gap semiconduc... | 10/11/1977 |
| 4035197 | Barrier type photovoltaic cells with enhanced open-circuit voltage, and process of manufacture A cadmium telluride photovoltaic cell is produced with increased conversion efficiency arising from enhanced open-circuit voltage. Such voltage is achieved by altering the surface of the crystalline cadmium telluride that contacts the barrier metal by hea... | 07/12/1977 |
| 4021833 | Infrared photodiode An improved lead tin telluride Schottky barrier photodiode includes a lead telluride -- lead tin telluride heterojunction structure to increase zero bias resistance.... | 05/03/1977 |
| 4016589 | Semiconductor device A semiconductor composite having a rectifying characteristic is provided by first forming an insulating film of a semiconductor compound such as SiO2 on a semiconductor substrate of N-type Si to a uniform thickness of 27A to 500A, for example, ... | 04/05/1977 |
| 4005468 | Semiconductor photoelectric device with plural tin oxide heterojunctions and common electrical connection A semiconductor photoelectric device of improved photoelectric and rectifying characteristics is provided by first forming a film of electrically insulating material such as silicon dioxide of a substantial thickness on a main surface of a semiconductor s... | 01/25/1977 |
| 3990095 | Selenium rectifier having hexagonal polycrystalline selenium layer A rectifying junction suitable for use in photosensitive devices is fabricated between a polycrystalline selenium layer and an electrode of n-type or low work function metal material.... | 11/02/1976 |
| 3980915 | Metal-semiconductor diode infrared detector having semi-transparent electrode This disclosure is directed to a photovoltaic detector having specific response to the infrared range, wherein the detector comprises a metal-semiconductor diode having a semi-transparent electrode and disposed on a specially prepared substrate of a narro... | 09/14/1976 |
| 3978333 | Photovoltaic device having polycrystalline base A photovoltaic device comprising a polycrystalline base having an electrically conductive grid affixed to the surface of the device to which illumination is to be applied, said grid effecting a rectifying junction with the base and at the same time functi... | 08/31/1976 |
| 3952323 | Semiconductor photoelectric device A semiconductor photoelectric device of improved photoelectric and rectifying characteristics is provided by first forming a film or silicon dioxide on a main surface, having a crystallographic orientation of (100), of a semiconductor substrate of N-type ... | 04/20/1976 |
| 3948682 | Semiconductor photoelectric generator A semiconductor photoelectric generator comprising interconnected photocells with rectifying barriers, with isotype junctions in the base region and with current leads in the regions adjacent the rectifying barriers. Each photocell has a working surface, ... | 04/06/1976 |
