Class 257/449 - Schottky barrier (e.g., a transparent Schottky metallic layer or a Schottky barrier containing at least one of indium or tin (e.g., SnO 2 , indium tin oxide))

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter wherein the device has a rectifying junction
No. of patents: 175
Last issue date: 10/27/2009

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Number	Title	Issue Date
7608904	Semiconductor device components with conductive vias and systems including the components A semiconductor device component includes at least one conductive via. The at least one conductive via may include a seed layer for facilitating adhesion of a conductive material within the via aperture, a barrier material and solder, or a silicon-containing filler....	10/27/2009
7438978	Transparent conductive film, transparent conductive plate, and touch panel A touch panel having excellent durability, in which depression is scarcely generated on the surface of the touch panel by pushing the surface with a pen, and a transparent conductive film and plate useful in the touch panel are provided. The transparent conductive f...	10/21/2008
7432577	Semiconductor component for the detection of radiation, electronic component for the detection of radiation, and sensor system for electromagnetic radiation A semiconductor component for detecting electromagnetic radiation includes a contact between a metal and a semiconductor. The semiconductor has at least one metal-chalcogenide compound semiconductor as an optical absorbing material or is configured completely from s...	10/07/2008
7420215	Transparent conductive film, semiconductor device and active matrix display unit A transparent conductive film substantially made from In2O3, SnO2 and ZnO, having a molar ratio In/(In+Sn+Zn) of 0.65 to 0.8 and also a molar ratio Sn/Zn of 1 or less: The transparent conductive film has a favorable electric contact ...	09/02/2008
7414767	Semiconductor optical device and semiconductor optical package using the same A semiconductor optical device, which includes a semiconductor substrate, an electro-absorption modulator, and at least one optical device is monolithically integrated on the semiconductor substrate. An insulative layer surrounds the electro-absorption modulator and...	08/19/2008
7405458	Asymmetric field transistors (FETs) A semiconductor structure and a method for forming the same. The structure includes (a) a semiconductor channel region, (b) a semiconductor source block in direct physical contact with the semiconductor channel region; (c) a source contact region in direct physical ...	07/29/2008
7402891	Semiconductor polymers, method for the production thereof and an optoelectronic component Layered germanium polymers that are semiconductive and demonstrate a strong red or infrared luminescence are produced through the topochemical conversion of calcium digermanide. Furthermore, silicon/germanium layer polymers can also be produced in this manner. These...	07/22/2008
7385271	Chemical sensor using chemically induced electron-hole production at a schottky barrier Electro-hole production at a Schottky barrier has recently been observed experimentally as a result of chemical processes. This conversion of chemical energy to electronic energy may serve as a basic link between chemistry and electronics and offers the potential fo...	06/10/2008
7358585	Silicon-based Schottky barrier infrared optical detector A silicon-based IR photodetector is formed within a silicon-on-insulator (SOI) structure by placing a metallic strip (preferably, a silicide) over a portion of an optical waveguide formed within a planar silicon surface layer (i.e., “planar SOI layer”) of the SO...	04/15/2008
7348649	Transparent conductive film The present invention provides a transparent conductive film having: a transparent base film; a transparent SiOx thin film having a thickness of from 10 to 100 nm, a refractive index of from 1.40 to 1.80 and an average surface roughness Ra of from 0.8 to ...	03/25/2008
7345350	Process and integration scheme for fabricating conductive components, through-vias and semiconductor components including conductive through-wafer vias A method for forming a conductive via in a semiconductor component is disclosed. The method includes providing a substrate having a first surface and an opposing, second surface. At least one hole is formed in the substrate extending between the first surface and th...	03/18/2008
7329937	Asymmetric field effect transistors (FETs) A semiconductor structure and a method for forming the same. The structure includes (a) a semiconductor channel region, (b) a semiconductor source block in direct physical contact with the semiconductor channel region; (c) a source contact region in direct physical ...	02/12/2008
7286195	Interconnect structure for TFT-array substrate and method for fabricating the same An interconnect structure connecting two isolated metal lines in a non-display area of a TFT-array substrate. A first metal line is disposed on the substrate, covered with a first insulating layer. A second metal line is disposed on the first insulating layer and co...	10/23/2007
7279765	Transparent electrode made from indium-zinc-oxide and etchant for etching the same A pixel electrode employs a transparent electrode made from indium-zinc-oxide (IZO) that is capable of preventing damage and bending thereof. In a liquid crystal display device containing pixel electrodes, the transparent electrode is made from indium-zinc-oxide (IZ...	10/09/2007
RE39780	Photoelectric converter, its driving method, and system including the photoelectric converter A photoelectric converter of a high signal-to-noise ratio, low cost, high productivity and stable characteristics and a system including the above photoelectric converter. The photoelectric converter includes a photoelectric converting portion in which a first elect...	08/21/2007
7253491	Silicon light-receiving device A silicon light-receiving device is provided. In the device, a substrate is based on n-type or p-type silicon. A doped region is ultra-shallowly doped with the opposite type dopant to the dopant type of the substrate on one side of the substrate so that a photoelect...	08/07/2007
7250666	Schottky barrier diode and method of forming a Schottky barrier diode Disclosed is a silicon-on-insulator-based Schottky barrier diode with a low forward voltage that can be manufactured according to standard SOI process flow. An active silicon island is formed using an SOI wafer. One area of the island is heavily-doped with an n-type...	07/31/2007
7244656	Thin film circuit board device and method for manufacturing the same The present invention relates to a thin film circuit board device having passive elements in wiring layers. The thin film circuit board device includes a base board (2) and a circuit part (3) including insulating layers (11) and (16) and ...	07/17/2007
7205665	Porous silicon undercut etching deterrent masks and related methods The disclosed invention relates to masked silicon structures and methods for making porous silicon in selected areas of a silicon substrate via anodic etching. The masked silicon structures comprise: (1) a frontside barrier layer; and (2) a backside opaque ohmic con...	04/17/2007
7173310	Lateral lubistor structure and method An ESD LUBISTOR structure based on FINFET technology employs a vertical fin (a thin vertical member containing the source, drain and body of the device) in alternatives with and without a gate. The gate may be connected to the external electrode being protected to m...	02/06/2007
7170142	Planar integrated circuit including a plasmon waveguide-fed Schottky barrier detector and transistors connected therewith A planar integrated circuit includes a semiconductor substrate having a substrate surface and a trench in the substrate, a waveguide medium in the trench having a top surface and a light propagation axis, the trench having a sufficient depth for the waveguide medium...	01/30/2007
RE39445	Solar cell and solar cell unit The solar cell of the present invention includes a titanium dioxide semiconductor that is held between a pair of electrodes so that the titanium dioxide semiconductor and at least one of the electrodes form a rectification barrier. ...	12/26/2006
7154136	Isolation structures for preventing photons and carriers from reaching active areas and methods of formation Regions of an integrated circuit are isolated by a structure that includes at least one isolating trench on the periphery of an active area. The trench is deep, extending at least about 0.5 μm into the substrate. The isolating structure prevents photons and electro...	12/26/2006
7132656	High speed and high efficiency Si-based photodetectors using waveguides formed with silicide for near IR applications According to this invention, silicon-based photodetectors using waveguides formed with silicide regions can have high speed and high efficiency for near IR applications. Utilizing the unique properties of silicides, the proposed method provides a simple and elegant ...	11/07/2006
7119411	Interconnect structure for TFT-array substrate and method for fabricating the same An interconnect structure connecting two isolated metal lines in a non-display area of a TFT-array substrate. A first metal line is disposed on the substrate, covered with a first insulating layer. A second metal line is disposed on the first insulating layer and co...	10/10/2006
7115896	Semiconductor structures for gallium nitride-based devices A nitride semiconductor is grown on a silicon substrate by depositing a few mono-layers of aluminum to protect the silicon substrate from ammonia used during the growth process, and then forming a nucleation layer from aluminum nitride and a buffer structure includi...	10/03/2006
7098518	Die-level opto-electronic device and method of making same In one embodiment of the invention, a die-level opto-electronic device comprises a semiconductor die having edges and a photonic device exposed on a first surface. The device includes a conductive structure formed in the die and away from the edges of the die, the c...	08/29/2006
7087834	Apparatus and method for photovoltaic energy production based on internal charge emission in a solid-state heterostructure An apparatus and method for solar energy production comprises a multi-layer solid-state structure including a photosensitive layer, a thin conductor, a charge separation layer, and a back ohmic conductor, wherein light absorption occurs in a photosensitive layer and...	08/08/2006
7064005	Semiconductor apparatus and method of manufacturing same A semiconductor apparatus that allow miniaturization of a multichip module using an interposer substrate and a method of manufacturing the same are provided. It is configured that an embedded electrode (4) penetrating through an interposer substrate (1...	06/20/2006
7053458	Suppressing radiation charges from reaching dark signal sensor An image sensor and method is provided to improve the measurement of a dark signal reference while substantially suppressing radiation charges that enter an active area of the image sensor from reaching a shielded dark signal detector. In one implementation, dark si...	05/30/2006
7053457	Opto-electronic component The invention relates to an opto-electronic component for converting electromagnetic radiation into an intensity-dependent photocurrent, comprising a substrate (1) with a microelectronic circuit whose surface is provided with a first layer (7) which is...	05/30/2006
7042058	Image sensor with guard ring for suppressing radiation charges An image sensor and method is provided to improve the measurement of a dark signal reference while substantially suppressing radiation charges that enter an active area of the image sensor from reaching a shielded dark signal detector. In one implementation, dark si...	05/09/2006
7029937	Semiconductor device and method of manufacturing the same, circuit board, and electronic instrument A depression is formed from a first surface of a semiconductor substrate. An insulating layer is provided on the bottom surface and an inner wall surface of the depression. A conductive portion is provided inside the insulating layer. A second surface of the semicon...	04/18/2006
7026223	Hermetic electric component package An electric component package having a base and a lid, the base and lid defining a hermetically sealed cavity therebetween for accommodating an electric component. The base includes at least one conductive via extending therethrough, allowing control and/or input/ou...	04/11/2006
7026701	Schottky barrier photodetectors A Schottky barrier photodetector comprises a waveguide structure formed by a thin strip of material having a relatively high free charge carrier density, for example a conductor or certain classes of highly-doped semiconductor, surrounded by material having a relati...	04/11/2006
7015560	Light-receiving device, method for manufacturing the same, and optoelectronic integrated circuit comprising the same A light-receiving device, a method for manufacturing the same, and an optoelectronic integrated circuit including the same are provided. The light-receiving device includes a substrate; an intrinsic region formed on the substrate; a first region formed to a shallow ...	03/21/2006
7012314	Semiconductor devices with reduced active region defects and unique contacting schemes A method of making a semiconductor device having a predetermined epitaxial region, such as an active region, with reduced defect density includes the steps of: (a) forming a dielectric cladding region on a major surface of a single crystal body of a first material; ...	03/14/2006
6979644	Method of manufacturing electronic circuit component A method of manufacturing an electronic circuit component, including the steps of: (a) forming a first thin film circuit element on a surface of a circuit board made of an Si substrate; (b) forming a hole or trench from the surface of the circuit board through at le...	12/27/2005
6975012	Semiconductor radiation detector having voltage application means comprises InxCdyTez on CdTe semiconductor substrate Disclosed is a semiconductor radiation detector element of Schottky barrier type, comprising: a compound semiconductor crystal including cadmium and tellurium as main components; and voltage application means for applying voltage to the compound semiconductor crysta...	12/13/2005
6956163	Apparatus and method for photovoltaic energy production based on internal charge emission in a solid-state heterostructure An apparatus and method for solar energy production comprises a multi-layer solid-state structure including a photosensitive layer, a thin conductor, a charge separation layer, and a back ohmic conductor, wherein light absorption occurs in a photosensitive layer and...	10/18/2005

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Class 257/449 - Schottky barrier (e.g., a transparent Schottky metallic layer or a Schottky barrier containing at least one of indium or tin (e.g., SnO 2 , indium tin oxide))