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| Number | Title | Issue Date |
| 7973379 | Photovoltaic ultraviolet sensor A photovoltaic ultraviolet sensor comprises a zinc oxide single crystal substrate. On the +c face of the zinc oxide single crystal substrate, an ultraviolet receiver is formed. The exemplary ultraviolet receiver includes a Schottky electrode which, when receiving ul... | 07/05/2011 |
| 7800193 | Photodiode, method for manufacturing such photodiode, optical communication device and optical interconnection module Both high light receiving sensitivity and high speed of a photodiode are achieved at the same time. The photodiode is provided with a semiconductor layer (1) and a pair of metal electrodes (2) which are arranged on the surface of the semiconductor laye... | 09/21/2010 |
| 7745901 | Highly-depleted laser doped semiconductor volume A device with increased photo-sensitivity using laser treated semiconductor as detection material is disclosed. In some embodiments, the laser treated semiconductor may be placed between and an n-type and a p-type contact or two Schottky metals. The field within the... | 06/29/2010 |
| 7705415 | Optical and electronic devices based on nano-plasma A device for detecting electromagnetic radiation, charged particles or photons including a 2-dimensional electron gas (2DEG) and/or a 2-dimensional hole gas (2DHG). The device detects the collective response of the plasma to perturbations of the 2DEG and/or the 2DHG... | 04/27/2010 |
| 7608904 | Semiconductor device components with conductive vias and systems including the components A semiconductor device component includes at least one conductive via. The at least one conductive via may include a seed layer for facilitating adhesion of a conductive material within the via aperture, a barrier material and solder, or a silicon-containing filler.... | 10/27/2009 |
| 7438978 | Transparent conductive film, transparent conductive plate, and touch panel A touch panel having excellent durability, in which depression is scarcely generated on the surface of the touch panel by pushing the surface with a pen, and a transparent conductive film and plate useful in the touch panel are provided. The transparent conductive f... | 10/21/2008 |
| 7432577 | Semiconductor component for the detection of radiation, electronic component for the detection of radiation, and sensor system for electromagnetic radiation A semiconductor component for detecting electromagnetic radiation includes a contact between a metal and a semiconductor. The semiconductor has at least one metal-chalcogenide compound semiconductor as an optical absorbing material or is configured completely from s... | 10/07/2008 |
| 7420215 | Transparent conductive film, semiconductor device and active matrix display unit A transparent conductive film substantially made from In2O3, SnO2 and ZnO, having a molar ratio In/(In+Sn+Zn) of 0.65 to 0.8 and also a molar ratio Sn/Zn of 1 or less: The transparent conductive film has a favorable electric contact ... | 09/02/2008 |
| 7414767 | Semiconductor optical device and semiconductor optical package using the same A semiconductor optical device, which includes a semiconductor substrate, an electro-absorption modulator, and at least one optical device is monolithically integrated on the semiconductor substrate. An insulative layer surrounds the electro-absorption modulator and... | 08/19/2008 |
| 7405458 | Asymmetric field transistors (FETs) A semiconductor structure and a method for forming the same. The structure includes (a) a semiconductor channel region, (b) a semiconductor source block in direct physical contact with the semiconductor channel region; (c) a source contact region in direct physical ... | 07/29/2008 |
| 7402891 | Semiconductor polymers, method for the production thereof and an optoelectronic component Layered germanium polymers that are semiconductive and demonstrate a strong red or infrared luminescence are produced through the topochemical conversion of calcium digermanide. Furthermore, silicon/germanium layer polymers can also be produced in this manner. These... | 07/22/2008 |
| 7385271 | Chemical sensor using chemically induced electron-hole production at a schottky barrier Electro-hole production at a Schottky barrier has recently been observed experimentally as a result of chemical processes. This conversion of chemical energy to electronic energy may serve as a basic link between chemistry and electronics and offers the potential fo... | 06/10/2008 |
| 7358585 | Silicon-based Schottky barrier infrared optical detector A silicon-based IR photodetector is formed within a silicon-on-insulator (SOI) structure by placing a metallic strip (preferably, a silicide) over a portion of an optical waveguide formed within a planar silicon surface layer (i.e., “planar SOI layer”) of the SO... | 04/15/2008 |
| 7348649 | Transparent conductive film The present invention provides a transparent conductive film having: a transparent base film; a transparent SiOx thin film having a thickness of from 10 to 100 nm, a refractive index of from 1.40 to 1.80 and an average surface roughness Ra of from 0.8 to ... | 03/25/2008 |
| 7345350 | Process and integration scheme for fabricating conductive components, through-vias and semiconductor components including conductive through-wafer vias A method for forming a conductive via in a semiconductor component is disclosed. The method includes providing a substrate having a first surface and an opposing, second surface. At least one hole is formed in the substrate extending between the first surface and th... | 03/18/2008 |
| 7329937 | Asymmetric field effect transistors (FETs) A semiconductor structure and a method for forming the same. The structure includes (a) a semiconductor channel region, (b) a semiconductor source block in direct physical contact with the semiconductor channel region; (c) a source contact region in direct physical ... | 02/12/2008 |
| 7286195 | Interconnect structure for TFT-array substrate and method for fabricating the same An interconnect structure connecting two isolated metal lines in a non-display area of a TFT-array substrate. A first metal line is disposed on the substrate, covered with a first insulating layer. A second metal line is disposed on the first insulating layer and co... | 10/23/2007 |
| 7279765 | Transparent electrode made from indium-zinc-oxide and etchant for etching the same A pixel electrode employs a transparent electrode made from indium-zinc-oxide (IZO) that is capable of preventing damage and bending thereof. In a liquid crystal display device containing pixel electrodes, the transparent electrode is made from indium-zinc-oxide (IZ... | 10/09/2007 |
| RE39780 | Photoelectric converter, its driving method, and system including the photoelectric converter A photoelectric converter of a high signal-to-noise ratio, low cost, high productivity and stable characteristics and a system including the above photoelectric converter. The photoelectric converter includes a photoelectric converting portion in which a first elect... | 08/21/2007 |
| 7253491 | Silicon light-receiving device A silicon light-receiving device is provided. In the device, a substrate is based on n-type or p-type silicon. A doped region is ultra-shallowly doped with the opposite type dopant to the dopant type of the substrate on one side of the substrate so that a photoelect... | 08/07/2007 |
| 7250666 | Schottky barrier diode and method of forming a Schottky barrier diode Disclosed is a silicon-on-insulator-based Schottky barrier diode with a low forward voltage that can be manufactured according to standard SOI process flow. An active silicon island is formed using an SOI wafer. One area of the island is heavily-doped with an n-type... | 07/31/2007 |
| 7244656 | Thin film circuit board device and method for manufacturing the same The present invention relates to a thin film circuit board device having passive elements in wiring layers. The thin film circuit board device includes a base board (2) and a circuit part (3) including insulating layers (11) and (16) and ... | 07/17/2007 |
| 7205665 | Porous silicon undercut etching deterrent masks and related methods The disclosed invention relates to masked silicon structures and methods for making porous silicon in selected areas of a silicon substrate via anodic etching. The masked silicon structures comprise: (1) a frontside barrier layer; and (2) a backside opaque ohmic con... | 04/17/2007 |
| 7173310 | Lateral lubistor structure and method An ESD LUBISTOR structure based on FINFET technology employs a vertical fin (a thin vertical member containing the source, drain and body of the device) in alternatives with and without a gate. The gate may be connected to the external electrode being protected to m... | 02/06/2007 |
| 7170142 | Planar integrated circuit including a plasmon waveguide-fed Schottky barrier detector and transistors connected therewith A planar integrated circuit includes a semiconductor substrate having a substrate surface and a trench in the substrate, a waveguide medium in the trench having a top surface and a light propagation axis, the trench having a sufficient depth for the waveguide medium... | 01/30/2007 |
| RE39445 | Solar cell and solar cell unit The solar cell of the present invention includes a titanium dioxide semiconductor that is held between a pair of electrodes so that the titanium dioxide semiconductor and at least one of the electrodes form a rectification barrier. ... | 12/26/2006 |
| 7154136 | Isolation structures for preventing photons and carriers from reaching active areas and methods of formation Regions of an integrated circuit are isolated by a structure that includes at least one isolating trench on the periphery of an active area. The trench is deep, extending at least about 0.5 μm into the substrate. The isolating structure prevents photons and electro... | 12/26/2006 |
| 7132656 | High speed and high efficiency Si-based photodetectors using waveguides formed with silicide for near IR applications According to this invention, silicon-based photodetectors using waveguides formed with silicide regions can have high speed and high efficiency for near IR applications. Utilizing the unique properties of silicides, the proposed method provides a simple and elegant ... | 11/07/2006 |
| 7119411 | Interconnect structure for TFT-array substrate and method for fabricating the same An interconnect structure connecting two isolated metal lines in a non-display area of a TFT-array substrate. A first metal line is disposed on the substrate, covered with a first insulating layer. A second metal line is disposed on the first insulating layer and co... | 10/10/2006 |
| 7115896 | Semiconductor structures for gallium nitride-based devices A nitride semiconductor is grown on a silicon substrate by depositing a few mono-layers of aluminum to protect the silicon substrate from ammonia used during the growth process, and then forming a nucleation layer from aluminum nitride and a buffer structure includi... | 10/03/2006 |
| 7098518 | Die-level opto-electronic device and method of making same In one embodiment of the invention, a die-level opto-electronic device comprises a semiconductor die having edges and a photonic device exposed on a first surface. The device includes a conductive structure formed in the die and away from the edges of the die, the c... | 08/29/2006 |
| 7087834 | Apparatus and method for photovoltaic energy production based on internal charge emission in a solid-state heterostructure An apparatus and method for solar energy production comprises a multi-layer solid-state structure including a photosensitive layer, a thin conductor, a charge separation layer, and a back ohmic conductor, wherein light absorption occurs in a photosensitive layer and... | 08/08/2006 |
| 7064005 | Semiconductor apparatus and method of manufacturing same A semiconductor apparatus that allow miniaturization of a multichip module using an interposer substrate and a method of manufacturing the same are provided. It is configured that an embedded electrode (4) penetrating through an interposer substrate (1... | 06/20/2006 |
| 7053458 | Suppressing radiation charges from reaching dark signal sensor An image sensor and method is provided to improve the measurement of a dark signal reference while substantially suppressing radiation charges that enter an active area of the image sensor from reaching a shielded dark signal detector. In one implementation, dark si... | 05/30/2006 |
| 7053457 | Opto-electronic component The invention relates to an opto-electronic component for converting electromagnetic radiation into an intensity-dependent photocurrent, comprising a substrate (1) with a microelectronic circuit whose surface is provided with a first layer (7) which is... | 05/30/2006 |
| 7042058 | Image sensor with guard ring for suppressing radiation charges An image sensor and method is provided to improve the measurement of a dark signal reference while substantially suppressing radiation charges that enter an active area of the image sensor from reaching a shielded dark signal detector. In one implementation, dark si... | 05/09/2006 |
| 7029937 | Semiconductor device and method of manufacturing the same, circuit board, and electronic instrument A depression is formed from a first surface of a semiconductor substrate. An insulating layer is provided on the bottom surface and an inner wall surface of the depression. A conductive portion is provided inside the insulating layer. A second surface of the semicon... | 04/18/2006 |
| 7026223 | Hermetic electric component package An electric component package having a base and a lid, the base and lid defining a hermetically sealed cavity therebetween for accommodating an electric component. The base includes at least one conductive via extending therethrough, allowing control and/or input/ou... | 04/11/2006 |
| 7026701 | Schottky barrier photodetectors A Schottky barrier photodetector comprises a waveguide structure formed by a thin strip of material having a relatively high free charge carrier density, for example a conductor or certain classes of highly-doped semiconductor, surrounded by material having a relati... | 04/11/2006 |
| 7015560 | Light-receiving device, method for manufacturing the same, and optoelectronic integrated circuit comprising the same A light-receiving device, a method for manufacturing the same, and an optoelectronic integrated circuit including the same are provided. The light-receiving device includes a substrate; an intrinsic region formed on the substrate; a first region formed to a shallow ... | 03/21/2006 |
