Did You Know...
...that Charles Goodyear performed some of his experiments on rubber while in debtor's prison? He was there so often he referred to it as his "hotel". Chronically in debt because of poor business sense and ill health, Goodyear depended on the generosity of friends and family. Even after he unlocked the secret to vulcanizing rubber, he was unable to improve his financial situation. When he died, his estate was $200,000 in debt.
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| Number | Title | Issue Date |
| 8164152 | Liquid crystal display and method of manufacturing the same A liquid crystal display and a method of manufacturing the same are provided. The liquid crystal display includes an insulating substrate, a gate electrode formed on the insulating substrate, an oxide semiconductor layer formed on the gate electrode, an etch stopper... | 04/24/2012 |
| 8143686 | Laser-induced structuring of substrate surfaces In one aspect, the present invention provides a method of processing a substrate, e.g., a semiconductor substrate, by irradiating a surface of the substrate (or at least a portion of the surface) with a first set of polarized short laser pulses while exposing the su... | 03/27/2012 |
| 8125043 | Photodetector element An element of photodetection of a radiation having a wavelength in vacuum close to a value λ0, including: a semiconductor layer of index ns and of a thickness ranging between λ0/4 ns and λ0/20 ns... | 02/28/2012 |
| 8044477 | Photovoltaic device and method for making One aspect of the present invention provides a device that includes a substrate; a first semiconducting layer; a transparent conductive layer; a transparent window layer. The transparent window layer includes cadmium sulfide and oxygen. The device has a fill factor ... | 10/25/2011 |
| RE41427 | Hybrid nanostructured materials based in II-VI semiconductors Hybrid crystalline organic-inorganic quantum confined systems are disclosed, which contain alternating layers of a bifunctional organic ligand and a II-VI semiconducting chalcogenide, wherein the semiconducting chalcogenide layers contain chalcogenides have the form... | 07/13/2010 |
| 7675133 | Persistent p-type group II-IV semiconductors A persistent p-type group II-VI semiconductor material is disclosed containing atoms of group II elements, atoms of group VI elements, and a p-type dopant which replaces atoms of the group VI element in the semiconductor material. The p-type dopant has a negative ox... | 03/09/2010 |
| 7518207 | Molecular beam epitaxy growth of ternary and quaternary metal chalcogenide films The ternary alloy CdSexTe1-x(2 1 1) and the quaternary alloy Cd1-zZnzSexTe1-x have been grown on Si(2 1 1) substrates using molecular beam epitaxy (MBE). The growth of CdSeTe is facilitated using a co... | 04/14/2009 |
| 7368762 | Heterojunction photodiode The present invention provides a heterojunction photodiode which includes a pn or Schottky-barrier junction formed in a first material region having a bandgap energy Eg1. When reverse-biased, the junction creates a depletion region which expands towards a... | 05/06/2008 |
| 7352043 | Multispectral detector matrix The invention concerns a matrix structure of multispectral detectors (200) comprising: a superimposition of several layers of semiconductor material separated by layers of dielectric material transparent to a light to be det... | 04/01/2008 |
| 7348054 | Substrate coated with a composite film, method for making same and uses thereof This substrate is coated with a composite film based on a mesoporous mineral layer containing nanoparticles formed in situ inside the layer. The composite film has a periodic lattice structure over a major portion of the thickness in which the nanoparticles are pres... | 03/25/2008 |
| 7332704 | Photosensitive button structure A photosensitive button structure includes a button body and a photosensitive layer. The photosensitive layer is disposed on a bottom side of the button body, and has a plurality of words and pictures formed thereon. Whereby, the photosensitive layer produces a firs... | 02/19/2008 |
| 7326503 | Process for color filter array residual pigment removal A method of fabricating a color filter array including the removal of unwanted residual color pigments. A substrate is coated with a colored photoresist layer. The photoresist layer is patterned. The substrate is then cured. A descumming step is performed after the ... | 02/05/2008 |
| 7301571 | Method and imaging apparatus for correcting defective pixel of solid-state image sensor, and method for creating pixel information In a solid-state image sensor in which a large number of pixel cells each comprised of a combination of a main photosensitive pixel having a relatively large area and a subsidiary photosensitive pixel having a relatively small area are arranged, if the subsidiary ph... | 11/27/2007 |
| 7271468 | High-voltage compatible, full-depleted CCD A charge coupled device for detecting electromagnetic and particle radiation is described. The device includes a high-resistivity semiconductor substrate, buried channel regions, gate electrode circuitry, and amplifier circuitry. For good spatial resolution and high... | 09/18/2007 |
| 7253412 | Focal plane antenna to sensor interface for an ultra-sensitive silicon sensor An electrical interface between a scene to be imaged and a bolometer type sensor is disclosed. Efficiency is improved by means of a thermal energy concentrator including a lens and an antenna. Where a plurality of bolometer pixels are located in an array, a microant... | 08/07/2007 |
| 7238960 | QWIP with enhanced optical coupling A QWIP structure is disclosed that is configured with enhanced optical coupling to improve absorption capability and efficiency. A waffle-type light-coupling grating having a pattern of etched wells operates to improve absorption by preventing photons from bouncing ... | 07/03/2007 |
| 7220973 | Modular manipulation system for manipulating a sample under study with a microscope A modular manipulation system and method for using such modular manipulation system for manipulating a sample under study with a microscope are provided. According to at least one embodiment, a platform is provided that comprises an interface to a microscope, a samp... | 05/22/2007 |
| 7217982 | Photodiode having voltage tunable spectral response A photodetector (10) includes a substrate (12) having a surface; a first layer (14) of semiconductor material that is disposed above the surface, the first layer containing a first dopant at a first concentration for having a first type of elect... | 05/15/2007 |
| 7217926 | Systems involving voltage-tunable quantum-well infrared photodetectors (QWIPs) and related methods The present disclosure relates to detection of light (or radiation) at different wavelengths. A voltage-tunable multi-color infrared (IR) detector element receives incident radiation through a substantially-transparent substrate. Side surfaces of the voltage-tunable... | 05/15/2007 |
| 7205545 | Electromagnetic radiation detection device with integrated housing comprising two superposed detectors The invention concerns an electromagnetic radiation sensing device with integrated housing including two superimposed sensors. A first sensor detects one first wavelength range, and a second sensor detects a second wavelength range. The first sensor is arranged insi... | 04/17/2007 |
| 7200318 | Near infra-red composite polymer-nanocrystal materials and electro-optical devices produced therefrom The invention comprises a composite material comprising a host material in which are incorporated semiconductor nanocrystals. The host material is light-transmissive and/or light-emissive and is electrical chargetransporting thus permitting electrical charge transpo... | 04/03/2007 |
| 7190403 | Solid-state image pickup apparatus having a broad photometric range and a photometric method for the same A solid-state image pickup apparatus includes a timing signal generator for generating timing signals. Particular gates formed in each of photosensitive cells arranged in an image pickup section are driven independently or simultaneously in response to the timing si... | 03/13/2007 |
| 7132726 | Integrated semiconductor circuit having a logic and power metallization without intermetal dielectric An integrated semiconductor circuit having a first and a second portion of a substrate, in which a power semiconductor circuit structure and a logic circuit structure are respectively formed. The metallization having a power metal layer and an in relative terms thin... | 11/07/2006 |
| 7129489 | Method and apparatus providing single bump, multi-color pixel architecture An infrared detector has a multi-layer structure to simultaneously detect IR energy in different spectral bands without changing polarity of a bias imposed across the detector. Two absorption layers are separated by a barrier layer that imposes an electrical potenti... | 10/31/2006 |
| 7112829 | Light emitting device and method for making same A light emission device and method for producing the device. The device includes, on a substrate, a stack including an etching stop layer, a first barrier layer, an emitting layer, and a second barrier layer. The stop layer is of the same nature as the emitting laye... | 09/26/2006 |
| 7113534 | Device for generating terahertz radiation, and a semiconductor component The invention relates to a device for generating terahertz (THz) radiation comprising a short pulse laser (1) with mode coupling to which a pump beam (3) is supplied, and comprising a semiconductor component equipped with a resonator mirror (M4)... | 09/26/2006 |
| 7075079 | Sensor for dual wavelength bands A dual wavelength focal plane has a first array of infrared sensing pixel elements and a second array of visible light pixel elements adapted to be selective to colors encountered while driving an automobile. The second array is selective to the colors red, blue and... | 07/11/2006 |
| 7045871 | II-VI compound semiconductor crystal and photoelectric conversion device Since a ZnTe-base compound semiconductor crystal was designed so as to have, on a ZnTe-base compound semiconductor layer, an n-type contact layer which includes a superlattice layer having n-type CdSe and n-type ZnTe grown with each other or a ZnCdSeTe-graded layer,... | 05/16/2006 |
| 7041983 | Planar geometry buried junction infrared detector and focal plane array The described embodiments of the present invention include a method for forming a radiation detector. A radiation absorption layer is formed on a substrate. A wider bandgap layer is formed on the radiation absorption layer. A passivation layer is formed on the wider... | 05/09/2006 |
| 7026228 | Methods of fabricating devices and semiconductor layers comprising cadmium mercury telluride, mercury telluride, and cadmium telluride The invention relates to a method of depositing Hg1-xCdxTe onto a substrate, in a MOVPE technique, where 0≦x≦1; comprising the step of reacting together a volatile organotellurium compound, and one or both of (i) a volatile organocadmium co... | 04/11/2006 |
| 7009226 | In-situ nitride/oxynitride processing with reduced deposition surface pattern sensitivity Carrier mobility in transistor channel regions is increased by depositing a conformal stressed liner. Embodiments include forming a silicon oxynitride layer on the stressed liner to reduce or eliminate deposition surface pattern sensitivity during gap filling, and i... | 03/07/2006 |
| 7005687 | Photodetector The present invention provides the photodetector comprising a lower cladding layer including a n-type doped region, an absorbing layer, an upper cladding layer including a p-type doped region, and ohmic electrodes connected to said lower cladding layer and said uppe... | 02/28/2006 |
| 7002230 | CdTe-base compound semiconductor single crystal for electro-optic element In case of chlorine doping, a CdTe-base compound semiconductor single crystal used for an electro-optic element has a crystal which is set to chlorine concentration ranging from 0.1 ppmwt to 5.0 ppmwt and has no precipitation having diameter of 2 μm or above. In ca... | 02/21/2006 |
| 6992321 | Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials High quality epitaxial layers of piezoelectric monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the piezoelectric monocrystalline layers. An accommodating buffer lay... | 01/31/2006 |
| 6979825 | Quantum-grid infrared photodetector (QGIP) spectrometers and related methods A plurality of quantum-grid infrared photodetector (QGIP) elements are concatenated to form a spectrometer. Each of the QGIP elements is adapted to detect light at a particular range of wavelengths. Additionally, each QGIP element is adapted to produce a photocurren... | 12/27/2005 |
| 6975012 | Semiconductor radiation detector having voltage application means comprises InxCdyTez on CdTe semiconductor substrate Disclosed is a semiconductor radiation detector element of Schottky barrier type, comprising: a compound semiconductor crystal including cadmium and tellurium as main components; and voltage application means for applying voltage to the compound semiconductor crysta... | 12/13/2005 |
| 6909539 | System and method for combining multiple energy bands to improve scene viewing A single sensor that can operate in multiple bands and display either one radiation band alone or multiple overlaid bands, using an appropriate color choice to distinguish the bands. The multiple-band sensor allows the user to look through at least one eyepiece and ... | 06/21/2005 |
| 6861681 | On-p-GaAs substrate Zn1-xMgxSySe1-y pin photodiode and on-p-GaAs substrate Zn1-xMgxSySe1-y avalanche photodiode A blue-ultraviolet on-p-GaAs substrate pin Zn1-xMgxSySe1-y photodiode with high quantum efficiency, small dark current, high reliability and a long lifetime. The ZnMgSSe photodiode has a metallic p-electrode, a p-GaAs single crystal substrate, a p-(ZnSe/ZnTe)m super... | 03/01/2005 |
| 6818975 | ELECTRIC CHARGE GENERATING SEMICONDUCTOR SUBSTRATE BUMP FORMING DEVICE, METHOD OF REMOVING ELECTRIC CHARGE FROM ELECTRIC CHARGE GENERATING SEMICONDUCTOR SUBSTRATE DEVICE FOR REMOVING ELECTRIC CHARGE FROM ELECTRIC CHARGE GENERATING SEMICONDUCTOR SUBSTRATE, AND ELECTRIC CHARGE GENERATING SEMICONDUCTOR SUBSTRATE The present invention provides a bump forming apparatus (101, 501) which can prevent charge appearance semiconductor substrates (201, 202) from pyroelectric breakdown and physical failures, a method carried out by the bump forming apparatus for removin... | 11/16/2004 |
| 6790701 | Method of manufacturing a multi-wavelength semiconductor image sensor A multi-wavelength semiconductor image sensor comprises a p-type Hg0.7Cd0.3Te photo-absorbing layer formed on a single crystal CdZnTe substrate, a CdTe isolation layer deposited on the photo-absorbing layer, a p-type Hg0.77Cd0.2... | 09/14/2004 |
