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| Number | Title | Issue Date |
| 8049292 | Semiconductor device and method for manufacturing semiconductor device A semiconductor device includes a plurality of semiconductor integrated circuits bonded to a structure body in which a fibrous body is impregnated with an organic resin. The plurality of semiconductor integrated circuits are provided at openings formed in the struct... | 11/01/2011 |
| 8044476 | Wide range radiation detector and manufacturing method A radiation detector comprising a II-VI compound semiconductor substrate that absorbs radiation having a first energy, a II-VI compound semiconductor layer of a first conductivity type provided on a main surface of the II-VI compound semiconductor substrate, a metal... | 10/25/2011 |
| 8039916 | CMOS pixel sensor with depleted photocollectors and a depleted common node An active pixel sensor in a p-type semiconductor body includes an n-type common node formed below a pinning region. A plurality of n-type blue detectors more lightly doped than the common node are disposed below pinning regions and are spaced apart from the common n... | 10/18/2011 |
| 8035183 | Photodiodes with PN junction on both front and back sides The present invention is directed toward a dual junction photodiode semiconductor device. The photodiode has a semiconductor substrate of a first conductivity type, a first impurity region of a second conductivity type shallowly diffused on the front side of the sem... | 10/11/2011 |
| 8035182 | Sensor, solid-state imaging device, and imaging apparatus and method of manufacturing the same A sensor is provided. The sensor includes semiconductor layer; a photodiode, an impurity-doped polycrystalline silicon layer; and a gate electrode. The photodiode is formed in the semiconductor layer. The impurity-doped polycrystalline silicon layer is formed above ... | 10/11/2011 |
| 8022493 | Image sensor and manufacturing method thereof Provided are embodiments of an image sensor. The image sensor can comprise a first substrate including a transistor circuit, a lower interconnection layer, an upper interconnection layer, and a second substrate including a vertical stacked photodiode. The lower inte... | 09/20/2011 |
| 8013412 | Materials, systems and methods for optoelectronic devices A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circu... | 09/06/2011 |
| 8004057 | Materials, systems and methods for optoelectronic devices A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circu... | 08/23/2011 |
| 7989908 | Image sensor and method for manufacturing the same Provided is an image sensor. The image sensor includes a semiconductor substrate, photodiode structures, color filters, and microlenses. The semiconductor substrate includes a first region having pixel regions and a second region around the first region. The pixel r... | 08/02/2011 |
| 7964928 | Photodetector with an improved resolution A photodetector made in monolithic form in a lightly-doped substrate of a first conductivity type. This photodetector includes at least two photodiodes and includes a first region of the first conductivity type more heavily doped than the substrate extending at leas... | 06/21/2011 |
| 7960807 | Ambient light detectors using conventional CMOS image sensor process A CMOS light detector configured to detect specific wavelengths of light includes a first sensor and a second sensor. The first sensor includes CMOS photocells that are covered by a colored filter layer of a first color that has a first transmittance that allows bot... | 06/14/2011 |
| 7956433 | Image detector and radiation detecting system with separation of metal layers for bias, scan and data lines The invention provides an image detector capable of improving the quality of detected images by reducing electronic noise, the image detector comprising, a plurality of scan lines disposed in parallel, a plurality of data lines provided so as to cross with the scan ... | 06/07/2011 |
| 7936035 | Photoelectric conversion element, solid-state image pickup device, and manufacturing method of the photoelectric conversion element A photoelectric conversion element comprises: a pair of electrodes; and an organic photoelectric conversion layer between the pair of electrodes, wherein one of the electrodes is a first electrode that collects electrons generated in the organic photoelectric conver... | 05/03/2011 |
| 7923801 | Materials, systems and methods for optoelectronic devices A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circu... | 04/12/2011 |
| 7915701 | Stacked organic photosensitive devices A device is provided having a first electrode, a second electrode, a first photoactive region having a characteristic absorption wavelength λ1 and a second photoactive region having a characteristic absorption wavelength λ2. The photoactive r... | 03/29/2011 |
| 7880257 | Image sensors including photoelectric converting units having multiple impurity regions An image sensor includes a semiconductor layer, and first and second photoelectric converting units including first and second impurity regions in the semiconductor layer that are spaced apart from each other and that are at about an equal depth in the semiconductor... | 02/01/2011 |
| 7875947 | Filter, color filter array, method of manufacturing the color filter array, and image sensor Provided are color filters formed of alternately stacked inorganic materials having different refractive indices, a color filter array, a method of manufacturing the color filter array, and an image sensor. A color filter can include a substrate and first and second... | 01/25/2011 |
| 7838955 | Image sensor and method for manufacturing the same An image sensor includes a metal interconnection and readout circuitry over a first substrate, an image sensing device, and an ion implantation isolation layer. The image sensing device is over the metal interconnection, and an ion implantation isolation layer is in... | 11/23/2010 |
| 7834411 | CMOS pixel sensor with depleted photocollectors and a depleted common node An active pixel sensor in a p-type semiconductor body includes an n-type common node formed below a pinning region. A plurality of n-type blue detectors more lightly doped than the common node are disposed below pinning regions and are spaced apart from the common n... | 11/16/2010 |
| 7791158 | CMOS image sensor including an interlayer insulating layer and method of manufacturing the same Provided are a CMOS image sensor and a method of manufacturing the same. The CMOS image sensor includes a semiconductor substrate having photodiodes and transistors. An interlayer insulating layer is formed on the resultant structure having the photodiodes and trans... | 09/07/2010 |
| 7759756 | Dual-pixel full color CMOS imager A dual-pixel full color complementary metal oxide semiconductor (CMOS) imager is provided, along with an associated fabrication process. Two stand-alone pixels are used for three-color detection. The first pixel is a single photodiode, and the second pixel has two p... | 07/20/2010 |
| 7709920 | Photodiode arrangement A photodiode that can separately detect the intensities of the three wavelength ranges of ultraviolet light of 400 nm or below includes an insulating layer; and a plurality of silicon semiconductor layers having different thicknesses formed on the insulating layer, ... | 05/04/2010 |
| 7679159 | Solid state imaging device and solid state imaging element Each of three light receiving sections has a P-type well having a P+-type layer and an N-type layer formed therein. The P+-type layer is diffused from substrate surface to depth d1. A PN junction forming portion of the N-type layer is di... | 03/16/2010 |
| 7646076 | Method of fabricating CMOS image sensor A method of fabricating a CMOS image sensor is provided, in which a trapezoidal microlens pattern profile is formed to facilitate reflowing the microlens pattern and by which a curvature of the microlens may be enhanced to raise its light-condensing efficiency. The ... | 01/12/2010 |
| 7633134 | Stratified photodiode for high resolution CMOS image sensor implemented with STI technology A stratified photodiode for high resolution CMOS image sensors implemented with STI technology is provided. The photodiode includes a semi-conductive layer of a first conductivity type, multiple doping regions of a second conductivity type, multiple doping regions o... | 12/15/2009 |
| 7629662 | Image sensor and fabricating method thereof An image sensor is provided having: a color filter layer including a red color filter with a first thickness, a green color filter with a second thickness, and a blue color filter with a third thickness; and a microlens array having a first microlens with a fourth t... | 12/08/2009 |
| 7626239 | Process for the collective fabrication of optical filtering components, and wafer of components The invention relates to tunable wavelength-selective optical filters for letting light of a narrow optical spectrum band, centered around an adjustable wavelength, to pass through and to stop wavelengths lying outside this band. More particularly, the invention rel... | 12/01/2009 |
| 7579665 | Color light receiving device and image pickup device A light receiving device and an image pickup device in which a plurality of light receiving devices are arranged are provided. The light receiving device comprises a single semiconductor substrate and a light receiving device that has a first photoelectric conversio... | 08/25/2009 |
| 7573113 | Photodiode with ultra-shallow junction for high quantum efficiency CMOS image sensor and method of formation A pinned photodiode with an ultra-shallow highly-doped surface layer of a first conductivity type and a method of formation are disclosed. The ultra-shallow highly-doped surface layer has a thickness of about 100 Angstroms to about 500 Angstroms and a dopant concent... | 08/11/2009 |
| 7566942 | Multi-spectral pixel and focal plane array A novel detection pixel micro-structure allowing the simultaneous and continuous detection of several discrete optical frequencies. A focal plane array comprises a plurality of multi-spectral detection pixels and a connecting platform to electrically connect the pix... | 07/28/2009 |
| 7550813 | Photoelectric converting film stack type solid-state image pickup device, and method of producing the same A solid-state image pickup device comprises: a plurality of photoelectric converting films stacked via an insulating layer, the photoelectric converting films being above a semiconductor substrate in which a signal read circuit is formed, in which each of the photoe... | 06/23/2009 |
| 7535073 | Solid-state imaging device, camera module and electronic equipment module To provide a back-illuminated type solid-state imaging device capable of color separation of pixels without using a color filter, and a camera module and an electronic equipment module which incorporate the solid-state imaging device. A solid-state imaging device in... | 05/19/2009 |
| 7531884 | CMOS image sensor with backside illumination and method for manufacturing the same A CMOS image sensor includes a plurality of pixel regions formed under a front surface of a substrate, and having photodiodes separated from each other by a field oxide, a multi-layered metal interconnection formed over the pixel regions of the front of the substrat... | 05/12/2009 |
| 7504701 | Optical unit featuring both photoelectric conversion chip and semiconductor chip wrapped with flexible sheet In an optical unit including a photoelectric conversion chip adapted to be optically connected to an optical fiber, and a semiconductor chip for driving the photoelectric conversion chip, both the photoelectric conversion chip and the semiconductor chip are wrapped ... | 03/17/2009 |
| 7446386 | Optical color sensor system An optical color sensor system is provided including providing a substrate having an optical sensor therein and forming a passivation layer over the substrate. The passivation layer is planarized and color filters are formed over the passivation layer. A planar tran... | 11/04/2008 |
| 7427799 | Complementary metal oxide semiconductor image sensor and method for fabricating the same A CMOS image sensor and a method for fabricating the same is disclosed, to enhance the image-sensing efficiency by forming a concave lens area for improving the light-condensing efficiency in a planarization layer formed before a micro-lens array, in which the CMOS ... | 09/23/2008 |
| 7413923 | Method of manufacturing CMOS image sensor Provided is a manufacturing method of a CMOS image sensor. The method includes forming an interlayer insulating layer, a color filter layer, and a planarizing layer. A first photoresist is applied on the planarizing layer, and patterning of the first photoresist is ... | 08/19/2008 |
| 7411232 | Semiconductor photodetecting device and method of manufacturing the same A semiconductor photodetecting device is provided for enabling a solid-state image sensor to meet the requirements of higher quality imaging and more reduction in cost. The photodetecting device of the present invention includes: a semiconductor substrate; and an ep... | 08/12/2008 |
| 7407830 | CMOS image sensor and method of fabrication A CMOS imaging device including a two pixel detection system for red, green, and blue light. One pixel detects red and blue light and another pixel detects green light. The detection of red and blue is based on wavelength and the device is structured such that in th... | 08/05/2008 |
| 7400023 | Photoelectric converting film stack type solid-state image pickup device and method of producing the same In a photoelectric converting film stack type solid-state image pickup device, a plurality of photoelectric converting film are stacked on a semiconductor substrate in which a signal readout circuit is formed, each of the photoelectric converting films is sandwiched... | 07/15/2008 |
