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| Number | Title | Issue Date |
| 8164151 | Thin active layer fishbone photodiode and method of manufacturing the same The present invention is directed toward a detector structure, detector arrays, and a method of detecting incident radiation. The present invention comprises a photodiode array and method of manufacturing a photodiode array that provides for reduced radiation damage... | 04/24/2012 |
| 8120130 | Solid-state imaging device and method for manufacturing the same It is an object of the present invention to provide a solid-state imaging device that can achieve a high sensitivity, finer pixels for increasing the number of pixels, a high-speed operation, and high image quality, and a method for manufacturing the same. There are... | 02/21/2012 |
| 8110885 | Solid state imaging device comprising hydrogen supply film and antireflection film Provided is a MOS type solid state imaging device, including a semiconductor substrate, a plurality of pixels arranged on the semiconductor substrate, each pixel having a light receiving element for generating a signal charge due to incident light, and a MOS transis... | 02/07/2012 |
| 7994600 | Antireflective coating Device and method for an antireflective coating to improve image quality in an image display system. A preferred embodiment comprises a first high refractive index layer overlying a reflective surface of an integrated circuit, a first low refractive index layer over... | 08/09/2011 |
| 7973378 | Solid-state imaging device having improved sensitivity and reduced flare Provided is a solid-state imaging device that realizes sensitivity improvement while maintaining flare prevention effect even when miniaturization of cell is advanced. The solid-state imaging device according to the present invention includes: light receiving units ... | 07/05/2011 |
| 7956432 | Photodiode for multiple wavelength operation A photodiode includes a substrate having a first semiconductor type surface region on at least a portion thereof, and a second semiconductor type surface layer formed in a portion of the surface region. A multi-layer anti-reflective coating (ARC) is on the second se... | 06/07/2011 |
| 7902623 | Solid-state imaging device A solid-state imaging device includes a photoelectric conversion section which is provided for each pixel and which converts light incident on a first surface of a substrate into signal charges, a circuit region which reads signal charges accumulated by the photoele... | 03/08/2011 |
| 7893515 | Photodetector integrated chip There are provided a semiconductor device including a photo receiving region having high photosensitivity by forming an antireflection film capable of both decreasing a reflectance and lowering a surface level density, and a manufacturing method of the semiconductor... | 02/22/2011 |
| 7880256 | Semiconductor device with passivation layer covering wiring layer The invention provides a semiconductor device with a bonding pad made of a wiring layer including aluminum and its manufacturing method that enhance the yield of the semiconductor device. The method of manufacturing the semiconductor device of the invention includes... | 02/01/2011 |
| 7868407 | Substrate comprising a lower silicone resin film and an upper silicone resin film There is disclosed a substrate comprising at least an organic film, an antireflection silicone resin film over the organic film, and a photoresist film over the antireflection silicone resin film, wherein the antireflection silicone resin film includes a lower silic... | 01/11/2011 |
| 7838954 | Semiconductor structure with solder bumps A semiconductor solder bump structure having a solder bump with at least a first solder and a second solder attached to the first solder, producing one solder bump having at least two different solders with different melting temperatures. A method of fabricating the... | 11/23/2010 |
| 7777288 | Integrated circuit device and fabrication method therefor In a temperature sensor section of a semiconductor integrated circuit device, wires of the topmost wiring layer of a multi-layer wiring structure are formed. A sheet-like temperature monitor element of vanadium oxide is provided between two of the wires in such a wa... | 08/17/2010 |
| 7745900 | Method and apparatus providing refractive index structure for a device capturing or displaying images A transient index stack having an intermediate transient index layer, for use in an imaging device or a display device, that reduces reflection between layers having different refractive indexes by making a gradual transition from one refractive index to another. Ot... | 06/29/2010 |
| 7709919 | Solid-state image sensing device including anti-reflection structure including polysilicon and method of manufacturing the same A solid-state image sensing device including an anti-reflection structure that uses polysilicon and a method of manufacturing the same, in which the solid-state image sensing device includes a photodiode region and a transistor region. The photodiode region includes... | 05/04/2010 |
| 7626238 | Semiconductor devices having antireflective material In one aspect, the invention includes a semiconductor processing method. An antireflective material layer is formed over a substrate. At least a portion of the antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photo... | 12/01/2009 |
| 7605439 | Antireflective hard mask compositions The invention includes new organic-containing compositions that can function as an antireflective layer for an overcoated photoresist. Compositions of the invention also can serve effectively as a hard mask layer by exhibiting a sufficient plasma etch selectivity fr... | 10/20/2009 |
| 7449761 | Electro-optical device, method for manufacturing electro-optical device, and electronic apparatus An electro-optical device includes an anti-reflective layer arranged on the face of a first metal layer that is closer to a semiconductor layer than a second metal layer. The anti-reflective layer covers the channel region as viewed in plan view. ... | 11/11/2008 |
| 7411170 | Photoelectric-conversion apparatus and image-pickup system A photoelectric-conversion apparatus includes a photoelectric-conversion area where a plurality of photoelectric-conversion elements configured to convert incident light into electrical charges, a plurality of floating-diffusion areas, a plurality of transfer-MOS tr... | 08/12/2008 |
| 7378627 | Semiconductor light receiving element and optical pick-up device having the semiconductor light receiving element A semiconductor light receiving element has: a semiconductor substrate; a plurality of photodiodes formed on the semiconductor substrate and configured to receive respective lights of different wavelengths; and an anti-reflection film provided on light receiving sur... | 05/27/2008 |
| 7368797 | Photoelectric conversion element and method of manufacturing the same In a back-surface electrode type photoelectric conversion element having electrodes and semiconductor layers for collecting carriers disposed only on a back surface side of a semiconductor substrate, a semiconductor thin film that is larger in band gap than the semi... | 05/06/2008 |
| 7364832 | Wet developable hard mask in conjunction with thin photoresist for micro photolithography A novel process for using a hard mask or protective layer in conjunction with an extremely thin photoresist is provided. In this process, a thin film of the protective layer is coated on the surface of a substrate that is to be selectively modified by reactive ion e... | 04/29/2008 |
| 7365408 | Structure for photolithographic applications using a multi-layer anti-reflection coating A bi-layer anti-reflective coating for use in photolithographic applications, and specifically, for use in ultraviolet photolithographic processes. The bi-layered anti-reflective coating is used to minimize pattern distortion due to reflections from neighboring feat... | 04/29/2008 |
| 7355222 | Imaging device having a pixel cell with a transparent conductive interconnect line and the method of making the pixel cell The invention relates to an imaging device having a pixel cell with a transparent conductive material interconnect line for focusing incident light onto a photosensor and providing an electrical connection to pixel circuitry, and the method of making the same. ... | 04/08/2008 |
| 7352047 | Systems and methods for integration of heterogeneous circuit devices A heterogeneous device comprises a substrate and a plurality of heterogeneous circuit devices defined in the substrate. In embodiments, a plurality of heterogeneous circuit devices are integrated by successively masking and ion implanting the substrate. The heteroge... | 04/01/2008 |
| 7348649 | Transparent conductive film The present invention provides a transparent conductive film having: a transparent base film; a transparent SiOx thin film having a thickness of from 10 to 100 nm, a refractive index of from 1.40 to 1.80 and an average surface roughness Ra of from 0.8 to ... | 03/25/2008 |
| 7341956 | Disposable hard mask for forming bit lines A method includes forming a group of disposable hard mask structures on a semiconductor device that includes a group of memory cells. The method further includes using the disposable hard mask structures to precisely control a junction profile of the memory cells. | 03/11/2008 |
| 7341930 | Systems and methods for integration of heterogeneous circuit devices A heterogeneous device comprises a substrate and a plurality of heterogeneous circuit devices defined in the substrate. In embodiments, a plurality of heterogeneous circuit devices are integrated by successively masking and ion implanting the substrate. The heteroge... | 03/11/2008 |
| 7329953 | Structure for reducing leakage currents and high contact resistance for embedded memory and method for making same A method for fabricating an insulating layer having contact openings of varying depths for logic/DRAM circuits is achieved using a single mask and etch step. After forming stacked or trench capacitors, a planar insulating layer is formed. Contact openings are etched... | 02/12/2008 |
| 7326646 | Nitrogen-free ARC layer and a method of manufacturing the same The present invention provides a nitrogen-free ARC layer, which is formed on the basis of silane and carbon dioxide by PECVD in a nitrogen-free deposition atmosphere. The optical characteristics may be tuned in a wide range, wherein, in particular, a back reflection... | 02/05/2008 |
| 7321455 | Microelectronic devices and methods for packaging microelectronic devices Microelectronic devices and methods of packaging microelectronic devices are disclosed herein. In one embodiment, a method includes placing a plurality of singulated radiation responsive dies on a support member, electrically connecting circuitry of the radiation re... | 01/22/2008 |
| 7320896 | Infrared radiation detector Electronic devices are disclosed that may be used for infrared radiation detection. An example electronic device includes a substrate, a transistor included in the substrate and a silicon-germanium (Si—Ge) structural layer coupled with the transistor. The structur... | 01/22/2008 |
| 7319553 | Optical modulator module package structure Disclosed herein is an optical modulator module package structure. In the optical modulator module package structure, an optical modulator device and a drive integrated circuit device are flip-chip bonded to a substrate, and an opening of the substrate is blocked us... | 01/15/2008 |
| 7317476 | Camera incorporating method and mobile electronic equipment with camera In a mobile electronic equipment, a main body has a flat bottom surface and a flat side which cooperatively form a frame and having a recess with rib slots on its side. A camera unit is constructed by connecting a flexible cable to a substrate on which a camera IC p... | 01/08/2008 |
| 7317237 | Photovoltaic conversion device and method of manufacturing the device There is disclosed a photovoltaic conversion device constructed using a p-type crystalline silicon substrate 404 doped with boron, which comprises a bulk substrate region 404, regions other than the bulk substrate region including an n-type region 4... | 01/08/2008 |
| 7315642 | System and method for measuring thin film thickness variations and for compensating for the variations A method for measuring thin film thickness variations of inspected wafer that includes an upper non-opaque thin film. The method including (i) scanning the wafer and obtain wafer image that includes die images each of which composed of pixels, (ii) identifying regio... | 01/01/2008 |
| 7314824 | Nitrogen-free ARC/capping layer and method of manufacturing the same The present invention provides a nitrogen-free ARC/capping layer in a low-k layer stack, which, in particular embodiments, is comprised of carbon-containing silicon dioxide, wherein the optical characteristics are tuned to conform to the 193 nm lithography. Moreover... | 01/01/2008 |
| 7309661 | Method for forming gate of semiconductor device Disclosed is a method for forming a gate of a semiconductor device capable of preventing a bridge from being created between adjacent gates due to a nitride polymer. The method includes the steps of forming a gate oxide film, a gate poly-Si film, and a gate W film s... | 12/18/2007 |
| 7291893 | Photoelectric conversion element and method of manufacturing the same In a back-surface electrode type photoelectric conversion element having electrodes and semiconductor layers for collecting carriers disposed only on a back surface side of a semiconductor substrate, a semiconductor thin film that is larger in band gap than the semi... | 11/06/2007 |
| 7279793 | System and method for manufacturing semiconductor devices using an anti-reflective coating layer An anti-reflective coating layer for the manufacturing of semiconductor devices is disclosed. In one example, a partial semiconductor device includes a substrate; a bottom anti-reflective coating (BARC) layer over the substrate, and the BARC layer is transformed fro... | 10/09/2007 |
| 7276798 | Integral topside vacuum package An integrated vacuum package having an added volume on a perimeter within the perimeter of a bonding seal between two wafers. The added volume of space may be an etching of material from the inside surface of the top wafer. This wafer may have vent holes that may be... | 10/02/2007 |
