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| Number | Title | Issue Date |
| 8410570 | Photodiode with interfacial charge control and associated process A photodiode includes a first doped layer and a second doped layer that share a common face. A deep isolation trench has a face contiguous with the first and second doped layers. A conducting layer is in contact with a free face of the second doped layer. A protecti... | 04/02/2013 |
| 8384176 | Solid-state imaging device A solid-state imaging device includes a photoelectric conversion section which is provided for each pixel and which converts light incident on a first surface of a substrate into signal charges, a circuit region which reads signal charges accumulated by the photoele... | 02/26/2013 |
| 8324702 | Solid-state imaging device A solid-state imaging device includes a photoelectric conversion section which is provided for each pixel and which converts light incident on a first surface of a substrate into signal charges, a circuit region which reads signal charges accumulated by the photoele... | 12/04/2012 |
| 8242571 | Waveguide photo-detector Provided is a waveguide photodetector that may improve an operation speed and increase or maximize productivity. The waveguide photodetector includes a waveguide layer extending in a first direction, an absorption layer disposed on the waveguide layer, a first elect... | 08/14/2012 |
| 8227885 | Selective light absorbing semiconductor surface A selective light absorbing semiconductor surface is disclosed. Said semiconductor surface is characterized by the presence of indentations or protrusions comprising a grating of dimensions such as to enhance the absorption of selected frequencies of radiation. In a... | 07/24/2012 |
| 8217482 | Infrared proximity sensor package with reduced crosstalk Disclosed are various embodiments of an infrared proximity sensor package comprising an infrared transmitter die, an infrared receiver die, a housing comprising outer sidewalls, a first recess, a second recess and a partitioning divider disposed between the first an... | 07/10/2012 |
| 8203195 | Materials, fabrication equipment, and methods for stable, sensitive photodetectors and image sensors made therefrom Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises a p-type semic... | 06/19/2012 |
| 8138567 | Materials, fabrication equipment, and methods for stable, sensitive photodetectors and image sensors made therefrom Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises an n-type semi... | 03/20/2012 |
| 8129809 | Image sensor and manufacturing method thereof Disclosed are an image sensor and a manufacturing method thereof. The image sensor includes a circuit layer on a first surface of a semiconductor substrate, a metal interconnection layer on the circuit layer, trenches formed in a second surface of the semiconductor ... | 03/06/2012 |
| 8102016 | Semiconductor integrated circuit device and method for manufacturing same In a light detector that is a semiconductor integrated circuit, a wiring structure is disposed on a semiconductor substrate along a periphery of a rectangular region that corresponds to a light receiver, and an interlayer insulating film composed of an SOG film is l... | 01/24/2012 |
| 8072039 | Energy conversion film and quantum dot film comprising quantum dot compound, energy conversion layer including the quantum dot film, and solar cell including the energy conversion layer An energy conversion film and a quantum dot film which contain a quantum dot compound, an energy conversion layer including the quantum dot film, and a solar cell including the energy conversion layer. The films act as cut-off filters blocking light of a particular ... | 12/06/2011 |
| 8035180 | Image sensor and method for manufacturing the same Provided is an image sensor and method for manufacturing the same. The image sensor includes a semiconductor substrate including a photodiode for each unit pixel, an interlayer insulating layer including metal lines on the semiconductor substrate, and an optical ref... | 10/11/2011 |
| 8035181 | Semiconductor photodetector with improved quantum efficiency as a function of detected light wavelength A semiconductor photodetector comprises: a semiconductor substrate; a first multilayer reflective layer on a first surface of the semiconductor substrate and including semiconductor layers; a first optically-resonant layer on the first multilayer reflective layer; a... | 10/11/2011 |
| 7986021 | Semiconductor device The invention provides a semiconductor device that solves a problem of reflection of a pattern of a wiring formed on a back surface of a semiconductor substrate on an output image. A reflection layer is formed between a light receiving element and a wiring layer, th... | 07/26/2011 |
| 7952158 | Elevated pocket pixels, imaging devices and systems including the same and method of forming the same An elevated photosensor for image sensors and methods of forming the photosensor. The photosensor may have light sensors having indentation features including, but not limited to, v-shaped, u-shaped, or other shaped features. Light sensors having such an indentation... | 05/31/2011 |
| 7902622 | Solid-state imaging device A solid-state imaging device includes a photoelectric conversion section which is provided for each pixel and which converts light incident on a first surface of a substrate into signal charges, a circuit region which reads signal charges accumulated by the photoele... | 03/08/2011 |
| 7898050 | Image sensor and method for manufacturing the sensor An image sensor and a method for manufacturing the sensor are provided for reducing loss of light reflected from photodiodes, and thus, improving light efficiency. The method of manufacturing an image sensor can include providing a semiconductor substrate having a p... | 03/01/2011 |
| 7880255 | Pixel cell having a grated interface A pixel cell having a photosensor within a silicon substrate; and an oxide layer provided over the photosensor, the oxide layer having a grated interface with said silicon substrate, and a method of fabricating the pixel cell having a grated interface. ... | 02/01/2011 |
| 7875945 | Rear electrode structure for use in photovoltaic device such as CIGS/CIS photovoltaic device and method of making same A photovoltaic device including a rear electrode which may also function as a rear reflector. In certain example embodiments of this invention, the rear electrode includes a metallic based reflective film that is oxidation graded, so as to be more oxided closer to a... | 01/25/2011 |
| 7868406 | Photodiode being monolithically integrated onto a waveguide A waveguide-integrated photodiode for high bandwidths with a semi-insulating monomode supply waveguide monolithically integrated on a substrate, together with an overlying photodiode mesa structure having an electroconducting n-contact layer, an absorption layer, a ... | 01/11/2011 |
| 7847362 | Photo detector, image sensor, photo-detection method, and imaging method A photo detector includes a photoelectric conversion layer having a periodic structure made of a semiconductor material on a surface of the photoelectric conversion layer. In the photo detector, at least a part of a resonance region formed by the periodic structure ... | 12/07/2010 |
| 7829968 | Planar layer of image sensor, method for manufacturing planer layer, and image sensor including planar layer An image sensor formed using a method for manufacturing a planar layer in a process for forming microlenses may be used in a complementary metal oxide semiconductor (CMOS) image sensor. Embodiments provide a planar layer that can improve the operation performance of... | 11/09/2010 |
| 7821091 | Photo detector A photo detector comprising a grating (PC). The grating (PC) is arranged on top of a surface of an active semiconductor layer. The grating (PC) is patterned in uninterrupted first strips (ST1), that are arranged in a first direction (x) in a first predetermin... | 10/26/2010 |
| 7812423 | Optical device comprising crystalline semiconductor layer and reflective element An optical semiconductor includes a first semiconductor layer and at least one reflective element that is formed on the semiconductor layer. The at least one reflective element comprises alternating layers of high and low index layers. A crystalline semiconductor la... | 10/12/2010 |
| 7808065 | Semiconductor light receiving element A semiconductor photosensitive element comprises: a semiconductor substrate of a first conductivity type; a first light absorption layer, a first semiconductor layer of a second conductivity type, a first semiconductor layer of the first conductivity type, a second ... | 10/05/2010 |
| 7791157 | Energy conversion film and quantum dot film comprising quantum dot compound, energy conversion layer including the quantum dot film, and solar cell including the energy conversion layer An energy conversion film and a quantum dot film which contain a quantum dot compound, an energy conversion layer including the quantum dot film, and a solar cell including the energy conversion layer. The films act as cut-off filters blocking light of a particular ... | 09/07/2010 |
| 7768088 | Solid-state imaging device that efficiently guides light to a light-receiving part In a solid-state imaging device including an on-chip microlens and a light-receiving part to receive incident light condensed by the on-chip microlens, an optical waveguide extending from an undersurface part of the microlens to the light-receiving part and for guid... | 08/03/2010 |
| 7759755 | Anti-reflection structures for CMOS image sensors Optical structures having an array of protuberances between two layers having different refractive indices are provided. The array of protuberances has vertical and lateral dimensions less than the wavelength range of lights detectable by a photodiode of a CMOS imag... | 07/20/2010 |
| 7701025 | Method and device for concentrating light in optoelectronic devices using resonant cavity modes A grating structure for channeling and concentrating incident radiation includes a regular pattern of elements each with a metallic shell partially surrounding at least one subcavity. The subcavity is filled with a dielectric or semiconductor. Light of one or more p... | 04/20/2010 |
| 7598582 | Ultra low dark current pin photodetector A photodetector and a method for fabricating a photodetector. The photodetector may include a substrate, a buffer layer formed on the substrate, and an absorption layer formed on the buffer layer for receiving incident photons and generating charged carriers. An N-d... | 10/06/2009 |
| 7538405 | Semiconductor sensor using surface plasmons to increase energy absorption efficiency Surface plasmons are used to increase an energy absorbing efficiency of a semiconductor sensor. ... | 05/26/2009 |
| 7498648 | Mirror-based projection system with a programmable control unit for controlling a spatial light modulator A projection system is disclosed herein. The projection system employs a spatial light modulator comprising an array of individually addressable pixels for modulating the incident light based on image data. The modulated light is projected on a screen for viewing. | 03/03/2009 |
| 7443005 | Lens structures suitable for use in image sensors and method for making the same An image sensor includes a double-microlens structure with an outer microlens aligned over an inner microlens, both microlenses aligned over a corresponding photosensor. The inner or outer microlens may be formed by a silylation process in which a reactive portion o... | 10/28/2008 |
| 7443006 | Photon amplification of image sensors A pixel cell having a substrate, photo-conversion device, and at least one dielectric layer over the photo-conversion device. The at least one dielectric layer includes one or more rare earth elements for amplifying the number of photons capable of being converted t... | 10/28/2008 |
| 7439091 | Light-emitting diode and method for manufacturing the same A light-emitting diode (LED) and a method for manufacturing the same are described. The method for manufacturing the LED comprises the following steps. An illuminant epitaxial structure is provided, in which the illuminant epitaxial structure has a first surface and... | 10/21/2008 |
| 7432578 | CMOS image sensor with enhanced photosensitivity A photosensitive device is disclosed which comprises a semiconductor substrate, at least one reverse biased device, such as a P-N junction diode formed in the semiconductor substrate, and at least one photosensitive layer disposed above the semiconductor substrate a... | 10/07/2008 |
| 7427799 | Complementary metal oxide semiconductor image sensor and method for fabricating the same A CMOS image sensor and a method for fabricating the same is disclosed, to enhance the image-sensing efficiency by forming a concave lens area for improving the light-condensing efficiency in a planarization layer formed before a micro-lens array, in which the CMOS ... | 09/23/2008 |
| 7394140 | Micromirror array device with electrostatically deflectable mirror plates Disclosed herein is a micromirror array device that comprises an array of reflective deflectable mirror plates each being associated with one single addressing electrode to be deflected to an ON state angle. A light transmissive electrode is disposed proximate to th... | 07/01/2008 |
| 7372123 | Semiconductor light-receiving module capable of converting light into current efficiently at light absorbing layer A semiconductor light-receiving module includes a semiconductor light-receiving element and an incident light direction device. The semiconductor light-receiving element includes a substrate, at least a light absorbing layer and an upper cladding layer formed sequen... | 05/13/2008 |
| 7368750 | Semiconductor light-receiving device A semiconductor light-receiving device includes: a semi-insulating substrate; a semiconductor layer of a first conduction type that is formed on the semi-insulating substrate; a buffer layer of the first conduction type that is formed on the semi-insulating substrat... | 05/06/2008 |
