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| Number | Title | Issue Date |
| 8138566 | Integrated circuit chip made secure against the action of electromagnetic radiation A chip for a chip-incorporating portable article having a card format, such as for smartcards. The chip includes a silicon substrate layer having integrated circuits in its active face defining a central processor unit and memories. The chip also includes physical m... | 03/20/2012 |
| 8129807 | Electro-optical device and electronic apparatus An electro-optical device includes a semiconductor layer including a channel region having a channel length along one of a first direction and a second direction, a source region having a source length along the second direction and electrically connected to a data ... | 03/06/2012 |
| 8049291 | Semiconductor optical sensor having an inter-region light-shielding plug A sensor includes a substrate provided with a circuit element forming region and a photodiode forming region, the substrate having a silicon substrate, an insulating layer on the silicon substrate, and a silicon layer on the insulating layer; a photodiode in the sil... | 11/01/2011 |
| 8030723 | Image sensor with decreased optical interference between adjacent pixels An image sensor with decreased optical interference between adjacent pixels is provided. An image sensor, which is divided into a pixel region and a peripheral region, the image sensor including a photodiode formed in a substrate in the pixel region, first to Mth me... | 10/04/2011 |
| 8018013 | Pixel structure and method for manufacturing thereof A pixel structure including a scan line, a data line, an active device, a shielding electrode, and a pixel electrode is provided on a substrate. The data line includes an upper conductive wire and a bottom conductive wire. The upper conductive wire is disposed over ... | 09/13/2011 |
| 8018014 | Semiconductor device A semiconductor device according to the present invention includes a semiconductor substrate: a photodiode responsive to a light, which is formed in the semiconductor substrate; at least an interlayer insulating layer formed over the semiconductor substrate, the at ... | 09/13/2011 |
| 8013411 | Method and structure to reduce optical crosstalk in a solid state imager Methods and structures to reduce optical crosstalk in solid state imager arrays. Sections of pixel material layers that previously would have been etched away and disposed of as waste during fabrication are left as conserved sections. These conserved sections are us... | 09/06/2011 |
| 7952157 | Electromagnetic shielding device for an infrared receiver An electromagnetic shielding device in an infrared receiver comprises of a wiring frame (4) of metal and an electromagnetic shielding cover (1) of metal. There is a window (2) in the electromagnetic shielding cover (1), in which there is ... | 05/31/2011 |
| 7952156 | Photoelectric conversion device and solid-state imaging device A photoelectric conversion device comprising a photo-electric conversion part including a first electrode layer, a second electrode layer and a photoelectric conversion layer provided between the first electrode layer and the second electrode layer, wherein light is... | 05/31/2011 |
| 7948047 | Input display An input display is provided in the present invention. The input display includes a thin film transistor (TFT) and a light blocking layer. The TFT includes a low-field electrode, a high-field electrode connected to the low-field electrode with a connecting section, ... | 05/24/2011 |
| 7944015 | Semiconductor device and method of manufacturing the same The invention provides a semiconductor device having high reliability and a method of manufacturing the same. The semiconductor device of the invention has pad electrodes formed on a semiconductor die near the side surface portion thereof and connected to a semicond... | 05/17/2011 |
| 7919827 | Method and structure for reducing noise in CMOS image sensors A method and device is disclosed for reducing noises in CMOS image sensors. An improved CMOS image sensor includes a light sensing structure surrounded by a support feature section. An active section of the light sensing structure is covered by no more than opticall... | 04/05/2011 |
| 7888760 | Solid state imaging device and method for manufacturing same, and solid state imaging module A solid state imaging device includes: an imaging device substrate with an imaging device section formed on a first major surface side thereof; a backside interconnect electrode provided on a second major surface side of the imaging device substrate and electrically... | 02/15/2011 |
| 7888759 | Photoelectric conversion device, imaging device, and process for producing the photoelectric conversion device A photoelectric conversion device comprising: a semiconductor substrate; an inorganic photoelectric conversion layer provided within the semiconductor substrate; and an organic photoelectric conversion layer provided above the inorganic photoelectric conversion laye... | 02/15/2011 |
| 7851879 | Imaging device comprising shielding unit which shields light incident from imaging area to optical black area and method of manufacturing the same An imaging device according to an example of the invention comprises a first photoelectric conversion unit which is formed at an imaging area of a substrate, a second photoelectric conversion unit for black reference observation which is formed at an optical black a... | 12/14/2010 |
| 7847361 | Solid state imaging device in which a plurality of imaging pixels are arranged two-dimensionally, and a manufacturing method for the solid state imaging device A solid state imaging device includes a plurality of imaging pixels that are arranged two-dimensionally along a main face of a semiconductor substrate. Each imaging pixel in the solid state imaging device includes a photodiode that performs photoelectric conversion ... | 12/07/2010 |
| 7804148 | Opto-thermal mask including aligned thermal dissipative layer, reflective layer and transparent capping layer An opto-thermal annealing mask stack layer includes a thermal dissipative layer located over a substrate. A reflective layer is located upon the thermal dissipative layer. A transparent capping layer, that may have a thickness from about 10 to about 100 angstroms, i... | 09/28/2010 |
| 7791155 | Detector shield An improved photodiode detector shielding apparatus and method are provided which shield a photodiode detector from electromagnetic interference and ambient light, without affecting the wavelengths of light that reach the photodiode. The improved photodiode detector... | 09/07/2010 |
| 7791156 | Semiconductor device, optical measuring and detecting device, and method of manufacturing the same Disclosed is a semiconductor device which is capable of preventing operation of the signal processing part from being unstable due to light not blocked by the light blocking layer by being obliquely incident on the signal processing part and preventing the operation... | 09/07/2010 |
| 7768087 | Photodiode, solid slate image sensor, and method of manufacturing the same A photodiode formed over a silicon substrate is disclosed. The photodiode includes a light-receiving region formed of a diffusion region of a first conduction type at the surface of the silicon substrate and forming a pn junction; an intermediate region formed of a ... | 08/03/2010 |
| 7745899 | Photomask and its method of manufacture An embodiment of a photomask for forming gate lines and a method of manufacturing semiconductor devices using the photomask is disclosed. The photomask includes a photomask substrate, gate line mask patterns that define gate lines that cross at least one active regi... | 06/29/2010 |
| 7741689 | Photoelectric conversion layer-stacked solid-state imaging element A photoelectric conversion layer-stacked solid-state imaging element comprises: a semiconductor substrate having a signal reading circuit formed thereon; at least one layer of photoelectric conversion layer each of which is provided interposed between a common elect... | 06/22/2010 |
| 7728400 | Electro-optical device and electronic apparatus An electro-optical device includes semiconductor layers disposed between a first substrate and an electro-optical layer. The semiconductor layers are provided at positions corresponding to crossover regions of scanning lines and data lines. Island light shielding fi... | 06/01/2010 |
| 7714404 | Solid-state imaging device A solid-state imaging device is provided and includes: a semiconductor substrate; a plurality of photoelectric conversion elements arranged in a two-dimensional array in a surface portion of the semiconductor substrate; a conductive light shielding film above the su... | 05/11/2010 |
| 7709917 | Solid state imaging device and method of manufacturing the same A solid state imaging device comprises: a photoelectric converting portion; a charge transferring portion including a charge transfer electrode for transferring an electric charge generated in the photoelectric converting portion; and a shielding film formed through... | 05/04/2010 |
| 7709918 | Photoelectric conversion device and manufacturing method thereof A photoelectric conversion device is provided which is capable of improving the light condensation efficiency without substantially decreasing the sensitivity. The photoelectric conversion device has a first pattern provided above an element isolation region formed ... | 05/04/2010 |
| 7683451 | CMOS image sensors with light shielding patterns An image sensor includes a semiconductor substrate including an active pixel region and an optical black region, a wiring pattern on the active pixel region and on the optical black region, and a light shielding pattern on the wiring pattern in the optical black reg... | 03/23/2010 |
| 7679157 | Image sensor and fabrication method thereof An image sensor has a substrate, a dielectric layer positioned on the substrate, a pixel array including a plurality of pixels defined on the substrate, a shield electrode positioned between any two adjacent pixel electrodes of the pixels, a photo conductive layer p... | 03/16/2010 |
| 7667286 | Light-collecting device, solid-state imaging apparatus and method of manufacturing thereof A high sensitive solid-state imaging apparatus which corresponds to an optical system has a short focal length (an optical system having a large incident angle θ). Each pixel (2.8 mm square in size) includes a distributed refractive index lens, a color filter for g... | 02/23/2010 |
| 7667285 | Printed electronic substrate havine photochromic barrier layer A protective photochromic barrier film for a light-sensitive printed electronic substrate. Light-sensitive semiconductor devices on a dielectric substrate are electrically connected by conductors. A barrier layer containing photochromic dyes covers some or all of th... | 02/23/2010 |
| 7629661 | Semiconductor devices with photoresponsive components and metal silicide light blocking structures In accordance with the invention, a photonic device comprises a semiconductor substrate including at least one circuit component comprising a metal silicide layer and an overlying layer including at least one photoresponsive component. The metal silicide layer is di... | 12/08/2009 |
| 7619292 | Semiconductor integrated device having solid-state image sensor packaged within and production method for same A semiconductor integrated device comprises: a light-shielding film which shields at least some part of a transfer section of the semiconductor integrated device from light; a first wiring formed in the same layer as the light-shielding film, with one end connected ... | 11/17/2009 |
| 7602034 | Image sensor and method for forming the same In an image sensor and a method for forming the same, the method comprises: preparing a substrate having a pixel array region and a peripheral circuit region; sequentially stacking a gate electrode layer and a mask layer on the substrate; patterning the gate electro... | 10/13/2009 |
| 7598581 | Image sensor with decreased optical interference between adjacent pixels An image sensor with decreased optical interference between adjacent pixels is provided. An image sensor, which is divided into a pixel region and a peripheral region, the image sensor including a photodiode formed in a substrate in the pixel region, first to Mth me... | 10/06/2009 |
| 7579664 | Semiconductor device with trench type device isolation layer and method for fabricating the same Disclosed are a semiconductor device with a device isolation structure and a method for fabricating the same. The method includes the steps of: forming a plurality of trenches defining first active regions by etching a substrate in a predetermined depth; forming a p... | 08/25/2009 |
| 7564113 | Solid state imaging device A solid-state imaging device includes a semiconductor substrate, photodetector elements, and blocking layers. The solid-state imaging device receives light on the back surface, and photoelectrically converts light incident upon the back surface of the semiconductor ... | 07/21/2009 |
| 7557419 | Method and apparatus for preventing or reducing color cross-talk between adjacent pixels in an image sensor device An image sensor device formed in an integrated circuit (IC) with one or more shading structures configured to provide a predetermined shading pattern to control the locations at which light impinges on the photodiode areas of the pixels. The predetermined shading pa... | 07/07/2009 |
| 7535072 | Input display An input display is provided in the present invention. The input display includes a thin film transistor (TFT) and a light blocking layer. The TFT includes a low-field electrode, a high-field electrode connected to the low-field electrode with a connecting section, ... | 05/19/2009 |
| 7473977 | Method of driving solid state image sensing device A solid-state imaging device that has a satisfactory noise characteristic and readout characteristic is provided by improving the noise characteristic and readout characteristic in a well balanced way. The solid-state imaging device has such a structure that ... | 01/06/2009 |
| 7439091 | Light-emitting diode and method for manufacturing the same A light-emitting diode (LED) and a method for manufacturing the same are described. The method for manufacturing the LED comprises the following steps. An illuminant epitaxial structure is provided, in which the illuminant epitaxial structure has a first surface and... | 10/21/2008 |
