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| Number | Title | Issue Date |
| 4058418 | Fabrication of thin film solar cells utilizing epitaxial deposition onto a liquid surface to obtain lateral growth A method to manufacture thin film solar cell in which a solar cell to convert directly light to electricity is formed by depositing silicon material on a carrier substrate having a coating which is liquid on the deposition temperature. An article manufact... | 11/15/1977 |
| 4047199 | Semiconductor device The invention disclosed relates to a bulk semiconductor device having a semiconductor element exhibiting a negative conductivity under a high electric field and being capable of generating a high electric field domain therein. The semiconductor device inc... | 09/06/1977 |
| 4038606 | Semiconductor device for storing and non-destructively reading image information and memory system comprising such a device A semiconductor device, in particular a target for use in a memory tube having an optical and electric input and an electric output, having a semiconductor plate of the silicon vidicon type, in which information in the form of charge is stored in an insul... | 07/26/1977 |
| 4029518 | Solar cell A P-type diffusion layer is formed on an N-type silicon semiconductor wafer to establish a P-N junction in a solar cell, the diffusion layer being exposed to radiation. A pair of electrodes are formed on the surfaces of the diffusion layer and the semicon... | 06/14/1977 |
| 4028565 | Semiconductor visible image storage device An improved optical storage device capable of storing optical images in a charge pattern in a high-resistivity piezoelectric semiconductor layer on a semiconductor substrate. A semiconductor substrate, coated with a layer of electrically insulating materi... | 06/07/1977 |
| 4025910 | Solid-state camera employing non-volatile charge storage elements A non-volatile charge storage element wherein long-term charge storage occurs in the interface states of the element. Charge is stored at low applied voltages (ࣘ 10 volts) in short times (ࣘ 1 microseconds) and is stored as long as 105 secon... | 05/24/1977 |
| 4016586 | Photovoltaic heterojunction device employing a wide bandgap material as an active layer A semiconductive heterojunction device particularly useful as a photovoltaic device such as a solar cell comprises a heterojunction formed between a first layer of semiconductor material exhibiting one type of electronic conductivity (N or P) and a second... | 04/05/1977 |
| 3990097 | Silicon solar energy cell having improved back contact and method forming same A silicon solar energy cell having a diffusant junction extending inwardly from one surface, an aluminum-silicon junction of the opposite polarity extending inwardly from the other surface, and a film of aluminum-oxygen-diffusant formed over the aluminum-... | 11/02/1976 |
| 3988497 | Photocathode made of a semiconductor single crystal The photoelectric surface of a photocathode made of a semiconductor single crystal is made minutely rough and, accordingly, lusterless, so that the transmissivity of a polarized light beam incident on the photoelectric surface is almost unaffected by the ... | 10/26/1976 |
| 3982269 | Semiconductor devices and method, including TGZM, of making same A homogeneous integrated power structure embodies solid state control or signal devices and power devices integrated monolithically to achieve optimum physical characteristics of each device embodied therein at economical cost of manufacturing the same. T... | 09/21/1976 |
| 3976872 | Gallium phosphide photodetector having an as-grown surface and producing an output from radiation having energies of 2.2 eV to 3.8 eV Anomalously large photoresponse to radiation of energies between about 2.8 eV and about 3.8 eV has been observed in certain gallium phosphide photodetectors having an "as-grown" surface. This photoresponse is believed to be due to the low density of recom... | 08/24/1976 |
| 3970778 | Monolithic acoustoelectric image pick-up device Monolithic acoustoelectric imager using a multistrip coupled convolver. The multistrip coupler of the convolver senses the electric fields associated with counter-propagating surface acoustic waves on a piezoelectric film. The interaction product of the s... | 07/20/1976 |
| 3961998 | Vacuum deposition method for fabricating an epitaxial PbSnTe rectifying metal semiconductor contact photodetector A junction photodetector employing Pb1-x Snx Te in narrow film strips grown epitaxially on an appropriate substrate. An appropriate metal overlaps the film to form a metal-semiconductor contact.... | 06/08/1976 |
| 3947681 | Electron tunneling device Tunneling electronic devices responsive to infrared and far infrared radiation are formed by overlapping deposits which define ultra-thin dielectric layers (less than about 10 Angstrom thickness) between metal layers, and contact areas of the order of 1 m... | 03/30/1976 |
| 3944732 | Method and apparatus for improving acousto-electric scanning An acoustically scanned, optical imaging system for converting patterns of light into electrical signals. The system includes a monolithic convolver that scans incident light patterns using two counter propagating acoustic waves. Located in front of the c... | 03/16/1976 |
