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| Number | Title | Issue Date |
| 7868405 | Inexpensive organic solar cell and method of producing same The present invention proposes an organic photovoltaic component, particularly an organic solar cell, whose electrode is implemented as unstructured and is provided with a passivation layer, so that the passivated electrode layer acts functionally as a structured el... | 01/11/2011 |
| 7863701 | Optical semiconductor device and method for manufacturing the same An optical semiconductor device is provided with a low concentration p-type silicon substrate (1); a low dopant concentration n-type epitaxial layer (second epitaxial layer) (26); a low dopant concentration p-type anode layer (27); a high concen... | 01/04/2011 |
| 7859070 | Airtight apparatus having a lid with an optical window for passage of optical signals An airtight apparatus includes a package and a lid. The lid is bonded to the package and defines an airtight space, together with the package. The lid includes an optical window which allows the passage of optical signals, a holding part which holds the optical wind... | 12/28/2010 |
| 7855424 | Method for packaging semiconductor device and package structure thereof A method for packaging a semiconductor device includes following steps. First, a first substrate including at least one first pattern is provided. At least one semiconductor device is disposed on the surface of the first substrate. Next, a spacer with at least one a... | 12/21/2010 |
| 7821089 | Photodetector array using isolation diffusions as crosstalk inhibitors between adjacent photodiodes A photodetector array includes a semiconductor substrate having opposing first and second main surfaces, a first layer of a first doping concentration proximate the first main surface, and a second layer of a second doping concentration proximate the second main sur... | 10/26/2010 |
| 7816749 | Photoelectric conversion device and method of producing the same, and method of producing line image sensor IC A plurality of line image sensor ICs 110 are formed to be arranged in X, Y directions with gaps therebetween on a semiconductor substrate 101. The gaps between the line image sensor ICs 110 become scribe lines 102X, 102Y. A pattern... | 10/19/2010 |
| 7816748 | Semiconductor device and method for manufacturing same The absorption of moisture from a wall surface of an apertured part formed in an interlayer insulating film in accordance with a light-receiving part of a light detector is minimized and deterioration of wiring in the interlayer insulating film is prevented. A posit... | 10/19/2010 |
| 7812420 | Polydiode structure for photo diode An integrated circuit device for converting an incident optical signal into an electrical signal comprises a semiconductor substrate, a well region formed inside the semiconductor substrate, a dielectric layer formed over the well region, and a layer of polysilicon ... | 10/12/2010 |
| 7768085 | Photodetector array using isolation diffusions as crosstalk inhibitors between adjacent photodiodes A photodetector array includes a semiconductor substrate having opposing first and second main surfaces, a first layer of a first doping concentration proximate the first main surface, and a second layer of a second doping concentration proximate the second main sur... | 08/03/2010 |
| 7768084 | Shallow semiconductor sensor with fluorescent molecule layer that eliminates optical and electronic crosstalk A semiconductor sensor including a plurality of pixels, each of which includes a fluorescent molecule layer and a photosensitive layer. The fluorescent molecule layer converts light incident on the pixel to surface plasmons. The photosensitive layer generates a ligh... | 08/03/2010 |
| 7755154 | Image sensor An image sensor which may maximize the optical integrity by maximizing the amount of incident light through a microlens layer and a method for manufacturing an image sensor. An image sensor may include a pixel region, a microlens layer, and at least one microlens. T... | 07/13/2010 |
| 7750423 | Photoelectric conversion device, solid-state imaging device and manufacturing method of solid-state imaging device A photoelectric conversion device comprising a lower electrode, an upper electrode opposing to the lower electrode and a photoelectric conversion layer provided between the lower electrode and the upper electrode, the photoelectric conversion device being for collec... | 07/06/2010 |
| 7750422 | Solid state image pickup apparatus and radiation image pickup apparatus In a solid state image pickup apparatus with a photodetecting device and one or more thin film transistors connected to the photodetecting device formed in one pixel, a part of the photodetecting device is formed over at least a part of the thin film transistor, and... | 07/06/2010 |
| 7714401 | Solid state imaging device and method of manufacturing the same A solid state imaging device comprises: a photoelectric converting portion provided on a semiconductor substrate; a charge transfer path, formed in an adjacent position to the photoelectric converting portion, that receives a signal charge generated in the photoelec... | 05/11/2010 |
| 7705414 | Photoelectric conversion device and image sensor A photoelectric conversion device (10) includes a first conductivity type first semiconductor region (10a) located in a pixel region (11), a second conductivity type second semiconductor region (12) provided in the first semiconduc... | 04/27/2010 |
| 7701023 | TFA image sensor with stability-optimized photodiode A TFA (thin film on ASIC) image sensor with stability-optimized photodiode for converting electromagnetic radiation into an intensity-dependent photocurrent. The TFA includes an intermetal dielectric layer, pixel back electrodes, vias, metal contacts, a transparent ... | 04/20/2010 |
| 7692259 | Solid-state element device A solid-state element device having: a solid-state element having a pad electrode smaller than a contact electrode, the solid-state element being flip-mounted; a power receiving/supplying portion for receiving/supplying a power, the power receiving/supplying portion... | 04/06/2010 |
| 7683448 | CMOS image sensor A complementary metal oxide semiconductor (CMOS) image sensor is provided. The CMOS image sensor can include a photodiode, a transfer transistor (Tx), a reset transistor (Rx), a drive transistor (Dx), and a select transistor (Sx). The CMOS image sensor includes a fl... | 03/23/2010 |
| 7675130 | Waveguide photodetector A waveguide photodetector detecting light incident on a light detecting end face includes: a substrate; and a layer stack structure on the substrate and including a semiconductor layer of a first conductivity type, an undoped semiconductor layer, and a semiconductor... | 03/09/2010 |
| 7655997 | Wafer level electro-optical semiconductor manufacture fabrication mechanism and a method for the same A wafer-level electro-optical semiconductor fabrication mechanism and method for the same which improves upon traditional electro-optical semiconductor grain packaging methods. The present invention electrically connects semiconductor grains to the grains on a top s... | 02/02/2010 |
| 7642613 | CMOS image sensor and method for fabricating the same A CMOS image sensor and a method for fabricating the same are disclosed, in which light that transmits through a microlens is prevented from being beyond a photodiode region to minimize loss of incident light and to improve low illumination characteristics of the CM... | 01/05/2010 |
| 7612425 | Image sensor with a transparent plate having refractive index changing regions An image sensor includes: a light source that irradiates a light on an object; a lens body that converges a reflection of the light from the object; a plurality of IC chips that receive the reflection passed through the lens body; and a transparent member provided b... | 11/03/2009 |
| 7608903 | Image sensor with SOI substrate An imager pixel utilizing a silicon-on-insulator substrate, a photodiode in said substrate below the buried oxide, and a dual contact to said photodiode and methods of forming said imager pixel. The photodiode has an increased fill factor due to its increased size r... | 10/27/2009 |
| 7595540 | Semiconductor device and method of manufacturing the same A semiconductor device including a package (2) having a plurality of wall portions (9a) and a plurality of conductor portions (4), a semiconductor element such as a solid-state image pickup device (1) mounted in an internal space o... | 09/29/2009 |
| 7586168 | High performance photosensor A photosensor includes a photovoltage generator for generating a photovoltage, and a comparator for determining a number of integer multiples of a threshold voltage associated with the photosensor. A primary counter is incremented by the determined number of integer... | 09/08/2009 |
| 7586167 | Detecting plasmons using a metallurgical junction A sensor device includes a substrate having first and second regions of first and second conductivity types, respectively. A junction having a band-gap is formed between the first and second regions. A plasmon source generates plasmons having fields. At least a port... | 09/08/2009 |
| 7550811 | Image pickup device and method of manufacturing the same The present invention relates to an image pickup device, etc., having a structure such that electrostatic discharge is unlikely to occur when an FOP and a CCD reading part are joined. This image pickup device comprises a semiconductor substrate, provided with the CC... | 06/23/2009 |
| 7538403 | PIN diode structure with zinc diffusion region A PIN photodiode having a substrate, a first type electrode layer disposed on the substrate, a first layer of intrinsic material disposed over a portion of the first-type electrode layer, a first type window layer disposed over said intrinsic layer. An island shaped... | 05/26/2009 |
| 7538404 | Optical semiconductor device and method for manufacturing the same An optical semiconductor device includes a first light receiving region and a second light receiving region provided on a substrate and the first and second light receiving regions include light receiving elements, respectively. A first anti-reflection film is forme... | 05/26/2009 |
| 7518204 | Semiconductor device A semiconductor device includes a semiconductor substrate formed of at least two kinds of group III elements and nitrogen, an active layer formed on the semiconductor substrate, and a nitride semiconductor layer formed on a surface of the semiconductor substrate and... | 04/14/2009 |
| 7508044 | End face sensor and method of producing the same An end face sensor device and a method of producing the sensor device, where the sensor device has flexibility or bendability independent of its shape and is suitable for constructing various devices with desired shapes. The end face sensor device is characterized i... | 03/24/2009 |
| 7498645 | Extreme ultraviolet (EUV) detectors based upon aluminum nitride (ALN) wide bandgap semiconductors Disclosed are detector devices and related methods. In an AlN EUV detector a low temperature AlN layer is deposed above an AlN buffer layer. In one embodiment, the low temperature AlN layer is deposed at about 800° C. Pulsed NH3 is used when growing an A... | 03/03/2009 |
| 7489014 | Front side electrical contact for photodetector array and method of making same A photodiode includes a semiconductor having front and backside surfaces and first and second active layers of opposite conductivity, separated by an intrinsic layer. A plurality of isolation trenches filled with conductive material extend into the first active laye... | 02/10/2009 |
| 7482665 | Photo diode and method for manufacturing same A photo diode includes a buried layer of first conductivity type, an epitaxial layer of first conductivity type and an epitaxial layer second conductivity type which are sequentially formed on a semiconductor substrate, a doped shallow junction layer of second condu... | 01/27/2009 |
| 7466001 | Image sensor and manufacturing method of image sensor In a manufacturing method of an image sensor, a lightproof film (an antireflective film for avoiding flares) is formed over a wiring area; a transparent film is formed over an imaging area using a material capable of patterning; a transparent film, for forming micro... | 12/16/2008 |
| 7446384 | CMOS image sensor module with wafers The present invention relates to an image sensor module and a manufacturing method thereof, especially to a wafer level chip size package (WL-CSP) realized by directly contacting an image sensor chip wafer to a glass wafer on which an IR filter coating layer is depo... | 11/04/2008 |
| 7443038 | Flip-chip image sensor packages The present invention provides flip-chip packaging for optically interactive devices such as image sensors and methods of assembly. In a first embodiment of the invention, conductive traces are formed directly on the second surface of a transparent substrate and an ... | 10/28/2008 |
| 7443017 | Package having bond-sealed underbump A package for containing microelectromechanical devices includes a first substrate wafer, and a second substrate wafer made of an optical quality material. An underbump is interposed between the first and second substrate wafers. The underbump is composed of a stand... | 10/28/2008 |
| 7438978 | Transparent conductive film, transparent conductive plate, and touch panel A touch panel having excellent durability, in which depression is scarcely generated on the surface of the touch panel by pushing the surface with a pen, and a transparent conductive film and plate useful in the touch panel are provided. The transparent conductive f... | 10/21/2008 |
| 7439554 | Semiconductor device and method for fabricating the same A semiconductor device comprises a photoelectric conversion portion formed on a semiconductor substrate, a first transparent film provided on the photoelectric conversion portion, and an interlayer lens provided on the first transparent film at a position correspond... | 10/21/2008 |
