Did You Know...
...that the Eveready Battery began as an invention called the "electric flowerpot," which was a tube with a battery and light bulb inside? The idea was to fasten this gizmo to the side of a flowerpot so it would illuminate the flowers from the bottom. The idea died on the vine and the businessman who licensed the flower pot, Conrad Huber, was left with a pile of useless tubes -- until he found a way to market them as batteries to light the world!
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| Number | Title | Issue Date |
| 8106472 | Image sensor with large-area, high-sensitivity and high-speed pixels The pixel for use in an image sensor comprises a low-doped semiconductor substrate (A). On the substrate (A), an arrangement of a plurality of floating areas, e.g., floating gates (FG2-FG6), is provided. Neighboring floating gates are electrically isol... | 01/31/2012 |
| 8097928 | Solid-state imaging device, and imaging apparatus A solid-state imaging device having a light-receiving section that photoelectrically converts incident light includes an insulating film formed on a light-receiving surface of the light-receiving section and a film and having negative fixed charges formed on the ins... | 01/17/2012 |
| 8097927 | Highly sensitive photo-sensing element and photo-sensing device using the same The present invention provides an image display unit integrated with a photo-sensor, comprising a photo-sensing element with high sensitivity and low noise and a polycrystalline silicon TFT prepared at the same time on an insulating substrate using planer process. A... | 01/17/2012 |
| 8093671 | Semiconductor device with a bulk single crystal on a substrate Device and method of forming a device in which a substrate (10) is fabricated with at least part of an electronic circuit for processing signals. A bulk single crystal material (14) is formed on the substrate, either directly on the substrate (10 | 01/10/2012 |
| 8076741 | Photo sensing element array substrate A photo sensing element array substrate is provided. The photo sensing element array substrate includes a flexible substrate and a plurality of photo sensing elements. The photo sensing elements are disposed in array on the flexible substrate. Each of the photo sens... | 12/13/2011 |
| 8076740 | Photo detector with a quantum dot layer A photo detector is provided with a plurality of quantum dot layers and first conductive type contact layers provided at both sides of the plurality of quantum dot layers so as to sandwich them; a second conductive type impurity is doped in a first semiconductor lay... | 12/13/2011 |
| 8072038 | Image sensor An image sensor having greatly improved physical and electrical bonding forces between a photodiode and a substrate, and a manufacturing method thereof. The image sensor includes a semiconductor substrate and readout circuitry, a dielectric layer on the semiconducto... | 12/06/2011 |
| 8058699 | Area sensor and display apparatus provided with an area sensor An area sensor of the present invention has a function of displaying an image in a sensor portion by using light-emitting elements and a reading function using photoelectric conversion devices. Therefore, an image read in the sensor portion can be displayed thereon ... | 11/15/2011 |
| 8053853 | Color filter-embedded MSM image sensor An image sensor device includes a semiconductor substrate having a light-sensing region, and a first and second electrode embedded within the substrate. The first and second electrode forms an array of slits, the array of slits is configured to allow a wavelength of... | 11/08/2011 |
| 8053854 | Micro-heater arrays and pn-junction devices having micro-heater arrays, and methods for fabricating the same Example embodiments include micro-heater arrays including first and second micro-heaters disposed perpendicular to or parallel with each other on a substrate and methods of fabricating pn junctions between first and second heating portions using the heat generated f... | 11/08/2011 |
| 8049288 | Image sensor and method for manufacturing the same An image sensor is provided. The image sensor comprises a readout circuitry, interconnections, a first image sensing device, and a second image sensing device. The readout circuitry is disposed on a first substrate. The interconnections comprise a first interconnect... | 11/01/2011 |
| 8044473 | Light sensor A light sensor includes an intrinsic layer, a first ion doping area disposed one side of the intrinsic layer, a second ion doping area disposed at the other side of the intrinsic layer, an oxide insulating layer on the intrinsic layer, and a gate metal on the oxide ... | 10/25/2011 |
| 8030721 | Method to optimize substrate thickness for image sensor device Provided is a method for fabricating an image sensor device that includes providing a substrate having a front side and a back side; patterning a photoresist on the front side of the substrate to define an opening having a first width, the photoresist having a first... | 10/04/2011 |
| 8030720 | Back-illuminated type solid-state imaging device A back-illuminated type solid-state imaging device is provided in which an electric field to collect a signal charge (an electron, a hole and the like, for example) is reliably generated to reduce a crosstalk. The back-illuminated type solid-state imaging dev... | 10/04/2011 |
| 8022492 | Semiconductor device for performing photoelectric conversion A semiconductor device for performing photoelectric conversion has a semiconductor substrate of a first conductivity type and a well region of a second conductivity type different from the first conductivity type and formed in a predetermined region of the semicondu... | 09/20/2011 |
| 8004056 | Solid-state imaging device and method for manufacturing the same A solid-state imaging device having a high sensitivity and a structure in which a miniaturized pixel is obtained, and a method for manufacturing the solid-state imaging device in which an interface is stable, a spectroscopic characteristic is excellent and which can... | 08/23/2011 |
| 7999339 | Photoelectric conversion device and solid-state imaging device A photoelectric conversion device comprising a photoelectric conversion part including a first electrode, a second electrode opposing to the first electrode and a photoelectric conversion layer provided between the first electrode and the second electrode, wherein a... | 08/16/2011 |
| 7999340 | Apparatus and method for forming optical black pixels with uniformly low dark current An apparatus and method for forming optical black pixels having uniformly low dark current. Optical Black opacity is increased without having to increase Ti/TiN layer thickness. A hybrid approach is utilized combining a Ti/TiN OB layer in conjunction with in-pixel m... | 08/16/2011 |
| 7982276 | Optical semiconductor device and method for manufacturing the same An optical semiconductor device is provided with a low concentration p-type silicon substrate (1); a low dopant concentration n-type epitaxial layer (second epitaxial layer) (26); a low dopant concentration p-type anode layer (27); a high concen... | 07/19/2011 |
| 7973377 | Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry In accordance with the invention, an improved image sensor comprises an array of germanium photosensitive elements integrated with a silicon substrate and integrated with silicon readout circuits. The silicon transistors are formed first on a silicon substrate, usin... | 07/05/2011 |
| 7968960 | Methods of forming strained semiconductor channels In various method embodiments, a device region in a semiconductor substrate and isolation regions adjacent to the device region are defined. The device region has a channel region and the isolation regions have strain-inducing regions laterally adjacent to the chann... | 06/28/2011 |
| 7964925 | Photodiode module and apparatus including multiple photodiode modules Various embodiments of the present invention are directed to a photodiode module including a structure configured to selectively couple light to a dielectric-surface mode of a photonic crystal of the photodiode module. In one embodiment of the present invention, a p... | 06/21/2011 |
| 7964926 | Image sensing devices including image sensor chips, image sensor package modules employing the image sensing devices, electronic products employing the image sensor package modules, and methods of fabricating the same An image sensor package includes an image sensor chip, a handling substrate mounted on a front side of the image sensor chip and a through electrode disposed on a backside of the image sensor chip. The through electrode extends into the image sensor chip. Moreover, ... | 06/21/2011 |
| 7960806 | Sub-mount, light emitting diode package and manufacturing method thereof A sub-mount, a light emitting diode package, and a method of manufacturing thereof are disclosed. A sub-mount, on which multiple light emitting diodes are mounted, can include a multiple number of metal bodies on which the light emitting diodes are respectively moun... | 06/14/2011 |
| 7944012 | Accelerated particle and high energy radiation sensor An accelerated electron detector comprises an array of monolithic sensors in a CMOS structure, each sensor comprising a substrate (10), an epi layer (11), a p+ well (12) and n+ wells (13) which are separated from the p+ well (12) b... | 05/17/2011 |
| 7932574 | Solid-state imaging device A solid-state imaging device having a light receiving section comprised of a stack of a photoconductive layer for absorbing light in a wavelength region for red, a photoconductive layer for absorbing light in a wavelength region for green, and a photoconductive laye... | 04/26/2011 |
| 7911016 | Method and structure for fabricating multiple tiled regions onto a plate using a controlled cleaving process A reusable transfer substrate member for forming a tiled substrate structure. The member including a transfer substrate, which has a surface region. The surface region comprises a plurality of donor substrate regions. Each of the donor substrate regions is character... | 03/22/2011 |
| 7911015 | Infrared detector and infrared solid-state imaging device An infrared detector includes a first PN junction diode and a second PN junction diode which are formed in a silicon layer formed apart from a support substrate, the silicon layer having a P-type first region and an N-type second region, wherein the first PN junctio... | 03/22/2011 |
| 7906825 | Ge imager for short wavelength infrared A germanium (Ge) short wavelength infrared (SWIR) imager and associated fabrication process are provided. The imager comprises a silicon (Si) substrate with doped wells. An array of pin diodes is formed in a relaxed Ge-containing film overlying the Si substrate, eac... | 03/15/2011 |
| 7906824 | Solid state imaging device and method of manufacturing the same A solid state imaging device has a plurality of photodetector parts 11 arranged in matrix, a plurality of vertical charge transfer electrodes 13 that read out signal charge from the photodetector parts and transfer the signal charge in the vertical dir... | 03/15/2011 |
| 7902618 | Backside illuminated imaging sensor with improved angular response A backside illuminated imaging pixel with improved angular response includes a semiconductor layer having a front and a back surface. The imaging pixel also includes a photodiode region formed in the semiconductor layer. The photodiode region includes a first and a ... | 03/08/2011 |
| 7893513 | Nanoparticle/nanotube-based nanoelectronic devices and chemically-directed assembly thereof According to some embodiments, the present invention provides a nanoelectronic device based on a nanostructure that may include a nanotube with first and second ends, a metallic nanoparticle attached to the first end, and an insulating nanoparticle attached to the s... | 02/22/2011 |
| 7893512 | Optoelectronic devices utilizing materials having enhanced electronic transitions An optoelectronic device that includes a material having enhanced electronic transitions. The electronic transitions are enhanced by mixing electronic states at an interface. The interface may be formed by a nano-well, a nano-dot, or a nano-wire. ... | 02/22/2011 |
| 7880251 | Structure having nanoapertures A structure includes a film having a plurality of nanoapertures. The nanoapertures are configured to allow the transmission of a predetermined subwavelength of light through the film via the plurality of nanoapertures. The structure also includes a semiconductor lay... | 02/01/2011 |
| 7868405 | Inexpensive organic solar cell and method of producing same The present invention proposes an organic photovoltaic component, particularly an organic solar cell, whose electrode is implemented as unstructured and is provided with a passivation layer, so that the passivated electrode layer acts functionally as a structured el... | 01/11/2011 |
| 7863701 | Optical semiconductor device and method for manufacturing the same An optical semiconductor device is provided with a low concentration p-type silicon substrate (1); a low dopant concentration n-type epitaxial layer (second epitaxial layer) (26); a low dopant concentration p-type anode layer (27); a high concen... | 01/04/2011 |
| 7859070 | Airtight apparatus having a lid with an optical window for passage of optical signals An airtight apparatus includes a package and a lid. The lid is bonded to the package and defines an airtight space, together with the package. The lid includes an optical window which allows the passage of optical signals, a holding part which holds the optical wind... | 12/28/2010 |
| 7855424 | Method for packaging semiconductor device and package structure thereof A method for packaging a semiconductor device includes following steps. First, a first substrate including at least one first pattern is provided. At least one semiconductor device is disposed on the surface of the first substrate. Next, a spacer with at least one a... | 12/21/2010 |
| 7821089 | Photodetector array using isolation diffusions as crosstalk inhibitors between adjacent photodiodes A photodetector array includes a semiconductor substrate having opposing first and second main surfaces, a first layer of a first doping concentration proximate the first main surface, and a second layer of a second doping concentration proximate the second main sur... | 10/26/2010 |
| 7816749 | Photoelectric conversion device and method of producing the same, and method of producing line image sensor IC A plurality of line image sensor ICs 110 are formed to be arranged in X, Y directions with gaps therebetween on a semiconductor substrate 101. The gaps between the line image sensor ICs 110 become scribe lines 102X, 102Y. A pattern... | 10/19/2010 |
