Did You Know...
...that the Band-Aid Bandage was invented by a Johnson & Johnson employee whose wife had cut herself? Earl Dickson's wife was rather accident prone, so he set out to develop a bandage that she could apply without help. He placed a small piece of gauze in the center of a small piece of surgical tape, and what we know today as the Band Aid bandage was born!
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| Number | Title | Issue Date |
| 7312507 | Sensitizing dye solar cell A dye-sensitized solar cell with high conversion efficiency is provided. The dye-sensitized solar cell according to the present invention has, between an electrode (2) formed on a surface of a transparent substrate (1) and a counter electrode (6... | 12/25/2007 |
| 7259381 | Methodology for determining electron beam penetration depth The Grunn equation: Depth = 0.046 ( ... | 08/21/2007 |
| 7245696 | Element-specific X-ray fluorescence microscope and method of operation An element-specific imaging technique utilizes the element-specific fluorescence X-rays that are induced by primary ionizing radiation. The fluorescence X-rays from an element of interest are then preferentially imaged onto a detector using an optical train. The pre... | 07/17/2007 |
| 7242006 | Dual-sided microstructured, position-sensitive detector The invention relates to a detector for determining the position and/or energy of photons and/or charged particles. Said detector comprises a plurality of diodes made of a semi-conductor material, n-contacts (1) and p-contacts (4), the n-contacts being... | 07/10/2007 |
| 7238597 | Boron ion delivery system A boron ion plasma, generated by use of a cathodic arc, is manipulated and delivered to a large flat product such as a silicon wafer with boron ion energies suitable for incorporation of boron atoms into solid state devices as one of the key steps in manufacturing s... | 07/03/2007 |
| 7142634 | Radiation field detection A radiation field detection system, for use with a radiating device, includes a radiation detector configured to receive radiation and to provide radiation strength indicia of amounts of radiation received, a positioning mechanism connected to the radiation detector... | 11/28/2006 |
| 7045833 | Avalanche photodiodes with an impact-ionization-engineered multiplication region An avalanche photodiode including a multiplication layer is provided. The multiplication layer may include a well region and a barrier region. The well region may include a material having a higher carrier ionization probability than a material used to form the barr... | 05/16/2006 |
| 7015560 | Light-receiving device, method for manufacturing the same, and optoelectronic integrated circuit comprising the same A light-receiving device, a method for manufacturing the same, and an optoelectronic integrated circuit including the same are provided. The light-receiving device includes a substrate; an intrinsic region formed on the substrate; a first region formed to a shallow ... | 03/21/2006 |
| 6903432 | Photosensitive device A photosensitive device for enabling high speed detection of electromagnetic radiation. The device includes recessed electrodes for providing a generally homogeneous electric field in an active region. Carriers generated in the active region are detected using the r... | 06/07/2005 |
| 6720206 | Method for manufacturing digital micro-mirror device (DMD) packages A method for manufacturing a semiconductor package is disclosed. A wafer including a plurality of semiconductor chips is provided. Each chip has one or more mirrors mounted thereon. Further, a plurality of bond pads formed on a periphery of the chip. Next, a photore... | 04/13/2004 |
| 6670657 | Integrated circuit having photodiode device and associated fabrication process An integrated circuit is provided that includes a substrate incorporating a semiconductor photodiode device having a p-n junction. The photodiode device includes at least one capacitive trench buried in the substrate and connected in parallel with the jun... | 12/30/2003 |
| 6627973 | Void-free interlayer dielectric (ILD0) for 0.18-micron flash memory semiconductor device A method of eliminating voids in the interlayer dielectric material of 0.18-μm flash memory semiconductor devices and a semiconductor device formed by the method. The present invention provides a method for eliminating voids in the interlayer dielectric ... | 09/30/2003 |
| 6525386 | Non-protruding optoelectronic lens An optoelectronic component has a lens that is formed in the surface of an encapsulant surrounding a semiconductor diode element. With respect to emitters, the lens reduces internal reflection and reduces dispersion to increase overall efficiency. With re... | 02/25/2003 |
| 6215164 | Elevated image sensor array which includes isolation between uniquely shaped image sensors An image pixel sensor array. The image pixel sensor array includes a substrate. An interconnect structure is formed adjacent to the substrate. A plurality of image pixel sensors are formed adjacent to the interconnect structure. Each image pixel sensor in... | 04/10/2001 |
| 6177710 | Semiconductor waveguide type photodetector and method for manufacturing the same A semiconductor waveguide type photo detector capable of preventing leak current from occurring and excellent in dark current characteristics, and a manufacturing method thereof are provided. In a semiconductor waveguide type photo detector, a layered str... | 01/23/2001 |
| 5808349 | Magnetized photoconductive semiconductor switch A strong magnetic field is applied to a photoconductive semiconductor switch to make the opening time of the switch independent of the recombination time of the photoionized semiconductor. As a result, the switch is capable of shaping current pulses with ... | 09/15/1998 |
| 4785186 | Amorphous silicon ionizing particle detectors Amorphous silicon ionizing particle detectors having a hydrogenated amorphous silicon (a--Si:H) thin film deposited via plasma assisted chemical vapor deposition techniques are utilized to detect the presence, position and counting of high energy ionizing... | 11/15/1988 |
| 4589006 | Germanium detector passivated with hydrogenated amorphous germanium Passivation of predominantly crystalline semiconductor devices (12) is provided for by a surface coating (21) of sputtered hydrogenated amorphous semiconductor material. Passivation of a radiation detector germanium diode, for example, is realized by sput... | 05/13/1986 |
| 4472728 | Imaging X-ray spectrometer An X-ray spectrometer for providing imaging and energy resolution of an X-ray source comprised of a thick silicon wafer (10) having an embedded matrix or grid of aluminum completely through the wafer fabricated, for example, by thermal migration. The alum... | 09/18/1984 |
| 4415916 | Germanium semiconducting radiation detector with phosphorus implanted n+ contact Germanium detectors usable for charged particle spectroscopy and capable of enduring overvoltage without impairment are produced by first implanting phosphorus ions of high energy in a small dose and then implanting more phosphorus ions of lower energy in... | 11/15/1983 |
| 4292645 | Charge splitting resistive layer for a semiconductor gamma camera An improved semiconductor gamma camera is disclosed. The gamma camera includes a p-i-n semiconductor diode which detects the presence and energy of gamma radiation from a source. Typically the source is radioactive material in a patient organ which is det... | 09/29/1981 |
| 4237470 | Hyperpure germanium coaxial radiation detector A radiation detector made of hyperpure germanium has generally the shape of a hollow cylinder with an outer generally cylindrical surface and an inner generally cylindrical surface and is formed with a p+ contact and n+ contact. One ... | 12/02/1980 |
| 4163240 | Sensitive silicon pin diode fast neutron dosimeter A method is disclosed of controlling and improving the sensitivity of silicon PIN diodes to dosage by fast neutrons. The method includes selecting a silicon mass of high resistivity n or p-type material having a relatively long minority carrier lifetime, ... | 07/31/1979 |
| 4157559 | Coaxial nuclear radiation detector with deep junction and radial field gradient Germanium radiation detectors are manufactured by diffusing lithium into high purity p-type germanium. The diffusion is most readily accomplished from a lithium-lead-bismuth alloy at approximately 430° and is monitored by a quartz half cell containing a ... | 06/05/1979 |
