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...During the Civil War, the Confederacy established its own Patent Office which issued 266 patents, a third of which concerned implements of war.
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| Number | Title | Issue Date |
| 8188468 | Compound-type thin film, method of forming the same, and electronic device using the same An organometal material gas is supplied into a low electron temperature and high density plasma excited by microwaves to form a thin film of a compound on a substrate as a film forming object. In this case, the temperature of a supply system for the organometal mate... | 05/29/2012 |
| 8188467 | Amorphous oxide and field effect transistor In a field effect transistor, a channel layer of the field effect transistor is composed of an amorphous oxide including In, Zn, N and O, an atomic composition ratio of N to N and O (N/(N+O)) in the amorphous oxide is equal to or larger than 0.01 atomic percent and ... | 05/29/2012 |
| 8188466 | Resistance variable element A resistance variable element is provided, which is capable of performing bipolar operation by a specified mechanism and usable as a memory. The resistance variable element has a laminated structure including an electrode, another electrode, an oxide layer between t... | 05/29/2012 |
| 8174009 | Organic electroluminescence element and manufacturing method thereof To provide an organic electroluminescence element including a structure that facilitates manufacturing of a large scale organic EL panel and a manufacturing method thereof, the organic electroluminescence element includes: an anode; a cathode; an organic luminescent... | 05/08/2012 |
| 8168969 | Semiconductor-on-diamond devices and methods of forming The present invention provides semiconductor-on-diamond devices, and methods for the formation thereof. In one aspect, a mold is provided which has an interface surface configured to inversely match a configuration intended for the device surface of a diamond layer.... | 05/01/2012 |
| 8168968 | Thin film transistor and organic light emitting display device using the same There is provided a thin film transistor exhibiting stable reliability and electrical characteristics by forming an active layer by adding material having a large difference of electronegativity from oxygen like Hf and an atomic radius similar to that of Zn or SN to... | 05/01/2012 |
| 8164090 | Field effect transistor and process for production thereof A field effect transistor has a gate electrode, gate-insulating layer, a channel and a source and drain electrodes connected electrically to the channel, the channel comprising an oxide semiconductor, the source electrode or the drain electrode comprising an oxynitr... | 04/24/2012 |
| 8158979 | Organic light emitting display and method of manufacturing the same An organic light emitting display is disclosed. The display comprises a transistor with an active layer comprising an oxide semiconductor material. The oxide semiconductor material has conductivity suitable for the transistor because of a diffusion path allowing hyd... | 04/17/2012 |
| 8158978 | Inverter, logic circuit including an inverter and methods of fabricating the same An inverter, a logic circuit including the inverter and method of fabricating the same are provided. The inverter includes a load transistor of a depletion mode, and a driving transistor of an enhancement mode, which is connected to the load transistor. The load tra... | 04/17/2012 |
| 8158976 | Thin-film transistor and method of manufacturing the same Example embodiments relate to thin-film transistors (TFT) and methods for fabricating the same. A thin-film transistor according to example embodiments may include a gate, a gate insulation layer, a channel layer including a first oxide semiconductor layer and a sec... | 04/17/2012 |
| 8158975 | Semiconductor device and manufacturing method thereof Electric characteristics and reliability of a thin film transistor are impaired by diffusion of an impurity element into a channel region. The present invention provides a thin film transistor in which aluminum atoms are unlikely to be diffused to an oxide semicondu... | 04/17/2012 |
| 8158974 | Semiconductor device, polycrystalline semiconductor thin film, process for producing polycrystalline semiconductor thin film, field effect transistor, and process for producing field effect transistor An object of the present invention is to provide a novel semiconductor device which is excellent in stability, uniformity, reproducibility, heat resistance, durability and the like, and can exert excellent transistor properties. The semiconductor device is a thin-fi... | 04/17/2012 |
| 8154018 | Semiconductor device, its manufacture method and template substrate A semiconductor device includes a ZnO-containing substrate containing Li, a zinc silicate layer formed above the ZnO-containing substrate, and a semiconductor layer epitaxially grown relative to the ZnO-containing substrate via the zinc silicate layer. ... | 04/10/2012 |
| 8154017 | Amorphous oxide semiconductor, semiconductor device, and thin film transistor An amorphous oxide semiconductor contains at least one element selected from In, Ga, and Zn at an atomic ratio of InxGayZnz, wherein the density M of the amorphous oxide semiconductor is represented by the relational expression (1) b... | 04/10/2012 |
| 8148722 | Method of manufacturing P-type ZnO semiconductor layer using atomic layer deposition and thin film transistor including the P-type ZnO semiconductor layer Provided are a method of manufacturing a transparent N-doped p-type ZnO semiconductor layer using a surface chemical reaction between precursors containing elements constituting thin layers, and a thin film transistor (TFT) including the p-type ZnO semiconductor lay... | 04/03/2012 |
| 8148721 | Bottom gate type thin film transistor, method of manufacturing the same, and display apparatus Provided is a bottom gate type thin film transistor including on a substrate (1) a gate electrode (2), a first insulating film (3) as a gate insulating film, an oxide semiconductor layer (4) as a channel layer, a second insulating film ( | 04/03/2012 |
| 8143618 | ZnO based semiconductor device and its manufacture method A ZnO based semiconductor device includes: a lamination structure including a first semiconductor layer containing ZnO based semiconductor of a first conductivity type and a second semiconductor layer containing ZnO based semiconductor of a second conductivity type ... | 03/27/2012 |
| 8134151 | Thin film transistor, active matrix substrate, and image pickup device A thin film transistor including: source and drain electrodes, an active layer that contacts the source and drain electrodes and contains an oxide semiconductor, a gate electrode that controls current flowing between the source and drain electrodes via the active la... | 03/13/2012 |
| 8134152 | CMOS thin film transistor, method of fabricating the same and organic light emitting display device having laminated PMOS poly-silicon thin film transistor with a top gate configuration and a NMOS oxide thin film transistor with an inverted staggered bottom gate configuration A CMOS thin film transistor arrangement including a PMOS poly-silicon thin film transistor having a top gate configuration and a NMOS oxide thin film transistor having an inverted staggered bottom gate configuration where both transistors share the same gate electro... | 03/13/2012 |
| 8129717 | Semiconductor device and method for manufacturing the same It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device with high productivity. In an inverted staggered (bottom gate) thin fi... | 03/06/2012 |
| 8129719 | Semiconductor device and method for manufacturing the semiconductor device An object is to provide favorable interface characteristics of a thin film transistor including an oxide semiconductor layer without mixing of an impurity such as moisture. Another object is to provide a semiconductor device including a thin film transistor having e... | 03/06/2012 |
| 8129718 | Amorphous oxide semiconductor and thin film transistor using the same There is provided an amorphous oxide semiconductor including hydrogen and at least one element of indium (In) and zinc (Zn), the amorphous oxide semiconductor containing one of hydrogen atoms and deuterium atoms of 1×1020 cm−3 or more to 1×... | 03/06/2012 |
| 8124969 | Semiconductor light emitting element and method for manufacturing the same A ZnO-based semiconductor light emitting element includes a ZnO-based semiconductor layer formed on a rectangular sapphire A-plane substrate having a principal surface lying in the A-plane {11-20}. The substrate has a thickness of 50 to 200 μm and is surrounded by ... | 02/28/2012 |
| 8115201 | Semiconductor device with oxide semiconductor formed within One of the objects of the present invention is to provide a thin film transistor using an oxide semiconductor film containing indium (In), gallium (Ga), and zinc (Zn), in which the contact resistance between the oxide semiconductor layer and a source and drain elect... | 02/14/2012 |
| 8101947 | System and method for manufacturing a thin-film device A thin-film device includes a plurality of circuit components defining an operational region of the thin-film device, an unpatterned channel portion (108, 340) disposed on the plurality of circuit components, and a patterned passivation dielectric (380,385... | 01/24/2012 |
| 8097879 | Light emitting diode and method for manufacturing the same The present invention relates to a light emitting diode (100, 109), comprising at least one p-doped structure, a plurality of n-doped zinc-oxide (ZnO) nanowires (104) arranged on the at least one p-doped structure, thereby forming a plurality of p-n ju... | 01/17/2012 |
| 8097878 | Nonvolatile memory elements with metal-deficient resistive-switching metal oxides Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed by depositing a metal-containing material on a silicon-containing material. The metal-containing material may be oxidized to form a res... | 01/17/2012 |
| 8097877 | Inorganic-organic hybrid thin-film transistors using inorganic semiconducting films Inorganic semiconducting compounds, composites and compositions thereof, and related device structures. ... | 01/17/2012 |
| 8093589 | Semiconductor device with an active layer containing zinc oxide, manufacturing method, and electronic device In a thin film transistor (1), a gate insulating layer (4) is formed on a gate electrode (3) formed on an insulating substrate (2). Formed on the gate insulating layer (4) is a semiconductor layer (5). Formed on the semicond... | 01/10/2012 |
| 8071977 | Thin film transistor array panel and manufacturing method thereof A thin film transistor and a manufacturing method thereof are provided. In the manufacturing method of the thin film transistor a semiconductive active layer and a semiconductor passivation layer are sequentially formed such that the semiconductor passivation layer ... | 12/06/2011 |
| 8067767 | Display substrate having vertical thin film transistor having a channel including an oxide semiconductor pattern A display substrate according to the present invention comprises a gate line formed on a substrate, a data line, a thin film transistor connected to the gate line and the data line respectively and pixel electrode connected to the thin film transistor, wherein a cha... | 11/29/2011 |
| 8067768 | Thin-film transistor display panel including an oxide active layer and a nitrogen oxide passivation layer, and method of fabricating the same Provided is a thin-film transistor (TFT) display panel having improved electrical and reliability properties and a method of fabricating the TFT display panel. The TFT display panel includes gate wiring formed on a substrate; an oxide active layer pattern formed on ... | 11/29/2011 |
| 8058646 | Programmable resistive memory cell with oxide layer Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. An electrically insulating oxide laye... | 11/15/2011 |
| 8058647 | Semiconductor device and method for manufacturing the same An object is to increase field effect mobility of a thin film transistor including an oxide semiconductor. Another object is to stabilize electrical characteristics of the thin film transistor. In a thin film transistor including an oxide semiconductor layer, a semi... | 11/15/2011 |
| 8058645 | Thin film transistor, display device, including the same, and associated methods A thin film transistor (TFT), including a substrate, a gate electrode on the substrate, an oxide semiconductor layer including a channel region, a source region, and a drain region, a gate insulating layer between the gate electrode and the oxide semiconductor layer... | 11/15/2011 |
| 8053773 | Thin film transistor, flat panel display device having the same, and associated methods A thin film transistor includes a gate electrode, a first insulating layer on the gate electrode, a semiconductor layer on the gate electrode and separated from the gate electrode by the first insulating layer, the semiconductor layer including a channel region corr... | 11/08/2011 |
| 8049212 | Thin film transistor, method of fabricating a thin film transistor and flat panel display device having the same A TFT includes a substrate, a transparent semiconductor layer on the substrate, the transparent semiconductor layer including zinc oxide and exhibiting a surface roughness of about 1.3 nm or less, a gate electrode on the transparent semiconductor layer, a gate insul... | 11/01/2011 |
| 8039835 | Semiconductor device, method for manufacturing the same, electro-optical device and electronic apparatus A semiconductor device includes a substrate, a transparent oxide layer disposed on one surface side of the substrate, a gate disposed apart from the transparent oxide layer, and a gate insulating layer disposed between the transparent oxide layer and the gate. The t... | 10/18/2011 |
| 8039836 | Semiconductor device In the present invention, a thin film transistor is formed on a plastic film substrate (1) having anisotropy of thermal shrinkage rate or coefficient of thermal expansion in in-plane directions of the substrate. A channel is formed such that the direction ( | 10/18/2011 |
| 8039834 | Nanogenerator comprising piezoelectric semiconducting nanostructures and Schottky conductive contacts A semiconducting device includes a substrate, a piezoelectric wire, a structure, a first electrode and a second electrode. The piezoelectric wire has a first end and an opposite second end and is disposed on the substrate. The structure causes the piezoelectric wire... | 10/18/2011 |
