Class 257/424 - Sensor with region of high carrier recombination (e.g., magnetodiode with carriers deflected to recombination region by magnetic field)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter wherein the device has a region of high carrier
No. of patents: 54
Last issue date: 09/09/2008

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Number	Title	Issue Date
7423329	Semiconductor device and magneto-resistive sensor integration A magnetic-sensing apparatus and method of making and using thereof is provided. The sensing apparatus may be fabricated from semiconductor circuitry and a magneto-resistive sensor. A dielectric may be disposed between the semiconductor circuitry and the magneto-res...	09/09/2008
7394122	Magnetic random access memory array with thin conduction electrical read and write lines An MTJ MRAM cell is formed between or below an intersection of ultra-thin orthogonal word and bit lines of high conductivity material whose thickness is less than 100 nm. Lines of this thickness produce switching magnetic fields at the cell free layer that are enhan...	07/01/2008
7375406	Thermoplastic overmolding for small package turbocharger speed sensor A sensor package apparatus includes a lead frame substrate that supports one or more electrical components, which are connected to and located on the lead frame substrate. A plurality of wire bonds are also provided, which electrically connect the electrical compone...	05/20/2008
7355261	Thin film device, thin film device module, and method of forming thin film device module A thin film device includes a thin film element disposed on a surface of a substrate for high voltage formed of a material having an electric resistivity in the range of 108 Ω·cm to 1010 Ω·cm, with an adhesive layer in between. The substrat...	04/08/2008
7339245	Hall sensor A Hall sensor on a semiconductor substrate includes a Hall plate in the semiconductor substrate, where the Hall plate includes a first zone having a first conduction type. The semiconductor substrate also include a second zone having a second conduction type. A spac...	03/04/2008
7339214	Methods and apparatus for inducing stress in a semiconductor device Methods and apparatus are disclosed for selectively inducing stress in a semiconductor device, wherein a first region of a substrate is implanted so as to induce stress in a second region. An electrical device is formed at least partially in the second region, where...	03/04/2008
7309888	Spin based electronic device A thin film sensing device operates based on a spin polarized current. The spin device includes ferromagnetic layers characterized by different coercivities and/or magnetization states, and one or more low transmission barriers in between. The device is further conf...	12/18/2007
7294583	Methods for the use of alkoxysilanol precursors for vapor deposition of SiOfilms A method for depositing conformal dielectric films uses alkoxy silanol or silanediol precursors and oxidizing and/or hydrolyzing agents. The method produces a material with liquid-like flow properties capable of achieving improved high aspect ratio gap fill more eff...	11/13/2007
7279377	Method and structure for shallow trench isolation during integrated circuit device manufacture A method suitable for use during fabrication of a semiconductor device such as a dynamic random access memory or a flash programmable read-only memory comprises etching through silicon nitride and pad oxide layers and into a semiconductor wafer to form a trench into...	10/09/2007
7273788	Ultra-thin semiconductors bonded on glass substrates A method for forming a semiconductor on insulator structure includes providing a glass substrate, providing a semiconductor wafer, and performing a bonding cut process on the semiconductor wafer and the glass substrate to provide a thin semiconductor layer bonded to...	09/25/2007
7262428	Strained Si/SiGe/SOI islands and processes of making same A process of making a strained silicon-on-insulator structure is disclosed. A recess is formed in a substrate to laterally isolate an active area. An undercutting etch forms a bubble recess under the active area to partially vertically isolate the active area. A the...	08/28/2007
7253490	Magnetic sensor having vertical hall device and method for manufacturing the same A vertical Hall device includes: a substrate; a semiconductor region having a first conductive type and disposed in the substrate; and a magnetic field detection portion disposed in the semiconductor region. The magnetic field detection portion is capable of detecti...	08/07/2007
7239000	Semiconductor device and magneto-resistive sensor integration A magnetic-sensing apparatus and method of making and using thereof is provided. The sensing apparatus may be fabricated from semiconductor circuitry and a magneto-resistive sensor. A dielectric may be disposed between the semiconductor circuitry and the magneto-res...	07/03/2007
7208808	Magnetic random access memory with lower switching field A magnetic random access memory with lower switching field is provided. The memory includes a first antiferromagnetic layer, a pinned layer formed on the first antiferromagnetic layer, a tunnel barrier layer formed on the pinned layer, a ferromagnetic free layer for...	04/24/2007
7205622	Vertical hall effect device A vertical Hall effect apparatus, including methods thereof. A substrate layer can be provided upon which an epitaxial layer is formed. The epitaxial layer is surrounded vertically by one or more isolation layers. Additionally, an oxide layer can be formed above the...	04/17/2007
7202185	Silica thin films produced by rapid surface catalyzed vapor deposition (RVD) using a nucleation layer An method employing atomic layer deposition (ALD) and rapid vapor deposition (RVD) techniques conformally deposits a dielectric material on small features of a substrate surface. The resulting dielectric film has a low dielectric constant and a high degree of surfac...	04/10/2007
7175713	Apparatus for cyclical deposition of thin films An apparatus for cyclical depositing of thin films on semiconductor substrates, comprising a process chamber having a gas distribution system with separate paths for process gases and an exhaust system synchronized with operation of valves dosing the process gases i...	02/13/2007
7153753	Strained Si/SiGe/SOI islands and processes of making same A process of making a strained silicon-on-insulator structure is disclosed. A recess is formed in a substrate to laterally isolate an active area. An undercutting etch forms a bubble recess under the active area to partially vertically isolate the active area. A the...	12/26/2006
7148155	Sequential deposition/anneal film densification method A silicon dioxide-based dielectric layer is formed on a substrate surface by a sequential deposition/anneal technique. The deposited layer thickness is insufficient to prevent substantially complete penetration of annealing process agents into the layer and migratio...	12/12/2006
7135418	Optimal operation of conformal silica deposition reactors Methods of forming conformal films that reduce the amount of metal-containing precursor and/or silicon containing precursor materials required are described. The methods increase the amount of film grown following each dose of metal-containing and/or silicon-contain...	11/14/2006
7129534	Magneto-resistive memory and method of manufacturing the same A method of forming a magneto-resistive memory element includes forming a groove in a layer of insulating material. A liner is formed conformably within the groove and the groove is filled with copper and then planarized. The electrically conductive material is prov...	10/31/2006
7077904	Method for atomic layer deposition (ALD) of silicon oxide film The present invention relates to a method for forming silicon oxide films on substrates using an atomic layer deposition process. Specifically, the silicon oxide films are formed at low temperature and high deposition rate via the atomic layer deposition process usi...	07/18/2006
7067390	Method for forming isolation layer of semiconductor device Disclosed is a method for forming an isolation layer of a semiconductor device. The method includes the steps of providing a semiconductor substrate having a predetermined isolation region, sequentially forming a pad oxide layer and a pad nitride layer exposing the ...	06/27/2006
7060561	Method for fabricating memory device The present invention relates to a method for fabricating a memory device. According to this invention, because the trenches for the isolation structures are etched simultaneously as patterning the first conductive layer and the first dielectric layer, the formed is...	06/13/2006
7008854	Silicon oxycarbide substrates for bonded silicon on insulator A method for forming a semiconductor on insulator structure includes forming a semiconductor layer on an insulating substrate, where the substrate is a different material than the semiconductor layer, and has a coefficient of thermal expansion substantially equal to...	03/07/2006
6921953	Self-aligned, low-resistance, efficient MRAM read/write conductors The present invention seeks to reduce the amount of current required for a write operation by using a process for forming the read conductor within a recessed write conductor, the write conductor itself formed within a trench of an insulating layer. The present inve...	07/26/2005
6903429	Magnetic sensor integrated with CMOS A magnetic sensor device formed using SOI CMOS techniques includes a substrate, a silicon oxide layer and in some cases a plurality of gated regions. A first terminal is located between two innermost gated regions and supplies a supply voltage. A second and a third ...	06/07/2005
6900490	Magnetic random access memory In a magnetic random access memory for generating an inductive magnetic flux by passing current into write wirings disposed closely to MTJ elements, whose resistance values varying depending on the magnetization array state of two magnetic layers of MTJ elements inc...	05/31/2005
6861718	Spin valve transistor, magnetic reproducing head and magnetic information storage system A spin valve transistor, magnetic reproducing head including a spin valve transistor and a magnetic information storage system having the spin valve transistor. The spin valve transistor has a collector, a base formed on the collector, a tunnel barrier layer formed ...	03/01/2005
6858909	CMP assisted liftoff micropatterning A method and structure for a microelectronic device comprises a first film over a substrate, a first polish resistant layer over the first film, a second film over the first polish resistant layer, a second polish resistant layer over the second film, wherein the fi...	02/22/2005
6833599	Sensitivity enhancement of semiconductor magnetic sensor A semiconductor magnetic sensor includes a semiconductor substrate, a source, a drain, a gate, and a carrier condensing means. The source and the drain are located in a surface of the substrate. One of the source and the drain includes adjoining two regions. The gat...	12/21/2004
6828641	Semiconductor memory device using magneto resistive element and method of manufacturing the same A semiconductor memory device includes a first wiring extending in a first direction, a second wiring extending in a second direction differing from the first direction, and a magneto resistive element arranged between the first and second wirings and comprising a f...	12/07/2004
6815784	Magneto-resistive random access memory A magneto-resistive random access memory includes a MOS transistor having a first gate and source and drain junctions on a substrate, a lower electrode connected to the source junction, a first magnetic layer on the lower electrode, a dielectric barrier layer includ...	11/09/2004
6803638	Semiconductor hall sensor A semiconductor Hall sensor can reduce measuring error due to an unbalanced voltage by decreasing the unbalanced voltage, and improve resistance to electrostatic by suppressing maximum electric field in the sensor. A cross-shaped pattern of the semiconductor Hall se...	10/12/2004
6794696	Magnetic memory device and method of manufacturing the same A magnetic memory device includes a magnetoresistance configured to store information. A first wiring is provided along a first direction. The first wiring has a function of applying a magnetic field to the magnetoresistance element. The first wiring has a first sur...	09/21/2004
6744086	Current switched magnetoresistive memory cell A ferromagnetic thin-film based digital memory cell with a memory film of an anisotropic ferromagnetic material and with a source layer positioned on one side thereof so that a majority of conduction electrons passing therefrom have a selected spin orientation to be...	06/01/2004
6727537	Magnetic memory cell A magnetic memory device based on easy domain wall propagation and the extraordinary Hall effect includes a perpendicular-to-plane a magnetic electrically conductive element (2) that includes a memory node (3). Electrical conductors (12-15) surr...	04/27/2004
6720634	Contactless acceleration switch A contactless acceleration switch detects a threshold acceleration value when a mass attached to a spring, moves towards a source, a drain, and a threshold adjustment channel implanted in a substrate layer. The threshold adjustment channel is located between the sou...	04/13/2004
6683359	Hall effect device with multiple layers A Hall effect device comprising: (a) an electrically-conductive layer or plate having a top surface: and (b) a ferromagnetic multilayer, where the conductive film or layer is composed of high mobility semiconductors. Also, a Hall effect device can be a de...	01/27/2004
6653703	Semiconductor memory device using magneto resistive element and method of manufacturing the same A semiconductor memory device includes a first wiring extending in a first direction, a second wiring extending in a second direction differing from the first direction, and a magneto resistive element arranged between the first and second wirings and inc...	11/25/2003

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Class 257/424 - Sensor with region of high carrier recombination (e.g., magnetodiode with carriers deflected to recombination region by magnetic field)