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| Number | Title | Issue Date |
| 8138563 | Circuit structures and methods with BEOL layers configured to block electromagnetic edge interference Back-end-of-line (BEOL) circuit structures and methods are provided for blocking externally-originating or internally-originating electromagnetic edge interference. One such BEOL circuit structure includes a semiconductor substrate supporting one or more integrated ... | 03/20/2012 |
| 8125040 | Two mask MTJ integration for STT MRAM A method for forming a magnetic tunnel junction (MTJ) for magnetic random access memory (MRAM) using two masks includes depositing over an interlevel dielectric layer containing an exposed first interconnect metallization, a first electrode, a fixed magnetization la... | 02/28/2012 |
| 8110882 | Semiconductor device with magnetic powder mixed therein and manufacturing method thereof A semiconductor device includes a semiconductor substrate on one side of which an integrated circuit and a plurality of connection pads connected to the integrated circuit are provided. An insulating film is provided on the plurality of connection pads except for pa... | 02/07/2012 |
| 7772663 | Method and apparatus for bitline and contact via integration in magnetic random access memory arrays In one embodiment, the invention is a method and apparatus for bitline and contact via integration in magnetic random access memory arrays. One embodiment of a magnetic random access memory according to the present invention includes a magnetic tunnel junction and a... | 08/10/2010 |
| 7768083 | Arrangements for an integrated sensor An integrated circuit can have a first substrate supporting a magnetic field sensing element and a second substrate supporting another magnetic field sensing element. The first and second substrates can be arranged in a variety of configurations. Another integrated ... | 08/03/2010 |
| 7737515 | Method of assembly using array of programmable magnets Systems and methods for assembling a structure onto a substrate include an array of programmable magnets disposed beneath a substrate, wherein a magnetic field is applied to the structure to levitate the structure above the substrate while the structure is moved rel... | 06/15/2010 |
| 7683447 | MRAM device with continuous MTJ tunnel layers A method for fabricating a magnetoresistive random access memory (MRAM) device having a plurality of memory cells includes: forming a fixed magnetic layer having magnetic moments fixed in a predetermined direction; forming a tunnel layer over the fixed magnetic laye... | 03/23/2010 |
| 7683446 | Magnetic memory using spin injection flux reversal A magnetization direction in a magnetosensing layer (5b) is perturbed near the magnetic connection between a magnetic yoke (5) and the magnetosensing layer (5b). If the magnetization direction of a region in the magnetosensing laye... | 03/23/2010 |
| 7635903 | Oscillator and method of manufacture An oscillator includes at least one of: (i) a parallel array of resistors (420, 421, 422, 701, 801, 901, 902) or magnetoresistive contacts to a magnetoresistive film (120, 320); and (ii) a series array of resistors (620, 621, 702, 902) or magnet... | 12/22/2009 |
| 7633132 | Magnetic sensor and manufacturing method therefor A magnetic sensor comprises a substrate, magnetoresistive element of a spin-valve type, a bias magnetic layer (or a permanent magnet film), and a protective film, wherein the bias magnetic layer is connected with both ends of the magnetoresistive element and the upp... | 12/15/2009 |
| 7511351 | Semiconductor device and method for fabricating the same In a semiconductor device having a WCSP type construction package, to increase inductance without increasing further an area conventionally occupied by a coil. A pseudo-post part 27 comprising a magnetic body is extended in a direction perpendicular to a main... | 03/31/2009 |
| 7508041 | Magnetic memory device having uniform switching characteristics and capable of switching with low current and associated methods A magnetic memory device includes a magnetic tunneling junction (MTJ) structure having a cylindrical shape. Elements of the MTJ structure are co-axial. The MTJ structure includes a conductive layer, an insulating layer co-axially formed around the conductive layer a... | 03/24/2009 |
| 7492021 | Magnetic transistor A magnetic transistor includes a magnetic section, a thin semiconductor layer, a first metal terminal, a second metal terminal, and a third metal terminal. The thin semiconductor layer is disposed on the magnetic section. The first metal terminal is disposed on one ... | 02/17/2009 |
| 7485938 | Magneto-resistive effect element and magnetic memory It is possible to perform a writing operation with low power consumption and a low current, and enhance reliability without causing element breakdown. There are provided a first magnetization-pinned layer including at least one magnetic film in which a magnetization... | 02/03/2009 |
| 7432573 | Surface-spintronics device A surface-spintronic device operating on a novel principles of operations may be implemented as a spin conducting, a spin switching or a spin memory device. It includes a magnetic atom thin film (13) layered on a surface of a solid crystal (12) and a d... | 10/07/2008 |
| 7423328 | Method for reducing word line current in magnetoresistive random access memory and structure thereof The method for reducing word line currents in magnetoresistive random access memory (MRAM) includes disposing the MRAM bit between a pair of word lines according to a magnetic field strength is increased when a distance between a magnetic section and its correspondi... | 09/09/2008 |
| 7411816 | Enhanced MRAM reference bit programming structure An MRAM circuit includes an MRAM array having a plurality of operational MRAM elements and a reference cell made up of one or more reference MRAM elements. A plurality of program lines within a first region are cladded with a flux-concentrating layer configured to f... | 08/12/2008 |
| 7411264 | Etch-stop layers for patterning block structures for reducing thermal protrusion The present invention provides a thin-film structure that includes an etch-stop layer having a first side and a second side, a patterned compensation layer for dissipating thermal energy, and an etch-vulnerable layer, where the etch-stop layer substantially impedes ... | 08/12/2008 |
| 7411262 | Self-aligned, low-resistance, efficient memory array The present invention seeks to reduce the amount of current required for a write operation by using a process for forming the read conductor within a recessed write conductor, the write conductor itself formed within a trench of an insulating layer. The present inve... | 08/12/2008 |
| 7411263 | Magnetic memory device A magnetic memory device includes a magnetoresistive element and a first wiring layer. The magnetoresistive element includes a fixed layer, a recording layer, and a non-magnetic layer interposed therebetween. The first wiring layer extends in a first direction and g... | 08/12/2008 |
| 7405085 | Amorphous soft magnetic shielding and keeper for MRAM devices An amorphous soft magnetic thin film material for forming shielding and keeper applications in MRAM devices. The amorphous soft magnetic material may be deposited using Physical Vapor Deposition (PVD) in the presence of a magnetic field, in order to form shielding l... | 07/29/2008 |
| 7397694 | Magnetic memory arrays A magnetic memory array. A first bit line provides a first writing magnetic field to a magnetic memory cell. A second bit line provides a second writing magnetic field to a reference magnetic memory cell. A word line provides a third writing magnetic field to the ma... | 07/08/2008 |
| 7378716 | Magnetic tunneling junction cell having a free magnetic layer with a low magnetic moment and magnetic random access memory having the same A magnetic tunneling junction (MTJ) cell includes a free magnetic layer having a low magnetic moment, and a magnetic random access memory (MRAM) includes the MTJ cell. The MTJ cell of the MRAM includes a lower electrode, a lower magnetic layer, a tunneling layer, an... | 05/27/2008 |
| 7375388 | Device having improved surface planarity prior to MRAM bit material deposition The present invention provides a method of fabricating a portion of a memory cell, the method comprising providing a first conductor in a trench which is provided in an insulating layer and flattening an upper surface of the insulating layer and the first conductor,... | 05/20/2008 |
| 7375405 | Magnetoresistance effect element, magnetic head, and magnetic storage system using a giant magnetoresistance effect element A magnetoresistance effect (MR) device incorporating a spin valve film, and a magnetic head, a magnetic head assembly and a magnetic recording/reproducing system incorporating the MR device, wherein the magnetization direction of a free layer is at a certain angle t... | 05/20/2008 |
| 7367111 | Method for producing a spin valve transistor with stabilization A method and structure for a spin valve transistor (SVT) comprises a magnetic field sensor, an insulating layer adjacent the magnetic field sensor, a bias layer adjacent the insulating layer, a non-magnetic layer adjacent the bias layer, and a ferromagnetic layer ov... | 05/06/2008 |
| 7339819 | Spin based memory coupled to CMOS amplifier A nonvolatile hybrid memory cell is provided. The cell is comprised of a magnetic spin storage element and one or two semiconductor FET isolation elements. The magnetic spin storage element is an electron spin-based memory element situated on a silicon based substra... | 03/04/2008 |
| 7339245 | Hall sensor A Hall sensor on a semiconductor substrate includes a Hall plate in the semiconductor substrate, where the Hall plate includes a first zone having a first conduction type. The semiconductor substrate also include a second zone having a second conduction type. A spac... | 03/04/2008 |
| 7335961 | Magnetic random access memory array with coupled soft adjacent magnetic layer An MTJ element is formed between orthogonal word and bit lines. The bit line is a composite line which includes a high conductivity layer and a soft magnetic layer under the high conductivity layer. During operation, the soft magnetic layer concentrates the magnetic... | 02/26/2008 |
| 7332781 | Magnetic memory with spin-polarized current writing, using amorphous ferromagnetic alloys, writing method for same The invention concerns a magnetic memory, whereof each memory point consists of a magnetic tunnel junction (60), comprising: a magnetic layer, called trapped layer (61), whereof the magnetization is rigid; a magnetic layer, called free layer (63... | 02/19/2008 |
| 7329935 | Low power magnetoresistive random access memory elements Low power magnetoresistive random access memory elements and methods for fabricating the same are provided. In one embodiment, a magnetoresistive random access device has an array of memory elements. Each element comprises a fixed magnetic portion, a tunnel barrier ... | 02/12/2008 |
| 7323732 | MRAM array employing spin-filtering element connected by spin-hold element to MRAM cell structure for enhanced magnetoresistance An MRAM array having enhanced magnetoresistance includes a spin filtering element connected by a spin hold element to the MRAM cell structures. A spin filtering element may serve several MRAM cell structures, by connecting the spin filtering element to a series of M... | 01/29/2008 |
| 7323757 | System for field assisted statistical assembly of wafers A wafer having heterostructure therein is formed using a substrate with recesses formed within a dielectric layer. A magnetized magnetic layer or a polarized electret material is formed at the bottom of each recess. The magnetized magnetic layer or a polarized elect... | 01/29/2008 |
| 7319262 | MRAM over sloped pillar An apparatus including a pillar located over a substrate and having at least one sloped surface oriented at an acute angle relative to the substrate. The apparatus also includes an MRAM stack substantially conforming to the sloped surface, the MRAM stack thereby als... | 01/15/2008 |
| 7312506 | Memory cell structure A memory cell structure. A first conductive line is cladded by at least two first ferromagnetic layers respectively having a first easy axis and a second easy axis, a nano oxide layer located between the first ferromagnetic layers, and a first pinned ferromagnetic l... | 12/25/2007 |
| 7309888 | Spin based electronic device A thin film sensing device operates based on a spin polarized current. The spin device includes ferromagnetic layers characterized by different coercivities and/or magnetization states, and one or more low transmission barriers in between. The device is further conf... | 12/18/2007 |
| 7310209 | Magnetoresistive sensor having a high coercivity hard magnetic bias layer deposited over a metallic layer A magnetoresistive sensor having hard bias layers constructed of CoPtCrB, which high coercivity when deposited over crystalline materials such as an AFM layer or other sensor material. The bias layer material exhibits high coercivity and high moment even when deposi... | 12/18/2007 |
| 7307302 | Magneto-resistive effect element and magnetic memory It is possible to obtain excellent heat stability even though the element is miniaturized and keep stable magnetic domains even though switching is repeated any number of times. A magneto-resistive effect element includes: a magnetization-pinned layer including a ma... | 12/11/2007 |
| 7304360 | Method of forming super-paramagnetic cladding material on conductive lines of MRAM devices A super-paramagnetic cladding layer formed on from 1 to 3 sides of a conductive line in a magnetic device is disclosed. The cladding layer is made of “x” ML/SL stacks in which x is between 5 and 50, SL is an amorphous AlOx seed layer, and ML is a comp... | 12/04/2007 |
| 7285811 | MRAM device for preventing electrical shorts during fabrication The present invention provides an MRAM cell which minimizes the occurrence of electrical shorts during fabrication. A first conductor is provided in a trench in an insulating layer and an upper surface of the insulating layer and the first conductor is planarized. A... | 10/23/2007 |
