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| Number | Title | Issue Date |
| 8188558 | ST-RAM magnetic element configurations to reduce switching current In order to increase an efficiency of spin transfer and thereby reduce the required switching current, a current perpendicular to plane (CPP) magnetic element for a memory device includes either one or both of a free magnetic layer, which has an electronically refle... | 05/29/2012 |
| 8183652 | Non-volatile magnetic memory with low switching current and high thermal stability A non-volatile current-switching magnetic memory element includes a bottom electrode, a pinning layer formed on top of the bottom electrode, and a fixed layer formed on top of the pinning layer. The memory element further includes a tunnel layer formed on top of the... | 05/22/2012 |
| 8183653 | Magnetic tunnel junction having coherent tunneling structure A magnetic tunnel junction includes an amorphous ferromagnetic reference layer having a first reference layer side and an opposing second reference layer side. The first reference layer side has a greater concentration of boron than the second reference layer side. ... | 05/22/2012 |
| 8183654 | Static magnetic field assisted resistive sense element Apparatus and associated method for writing data to a non-volatile memory cell, such as spin-torque transfer random access memory (STRAM). In accordance with some embodiments, a resistive sense element (RSE) has a heat assist region, magnetic tunneling junction (MTJ... | 05/22/2012 |
| 8174086 | Magnetoresistive element, and magnetic random access memory A magnetoresistive element is provided with a first magnetization free layer; a second magnetization free layer; a non-magnetic layer disposed adjacent to the second magnetization free layer; and a first magnetization fixed layer disposed adjacent to the second magn... | 05/08/2012 |
| 8164148 | Method of generating strong spin waves and spin devices for ultra-high speed information processing using spin waves Provided are a method of generating strong spin waves, a method of simultaneously generating spin waves and electromagnetic waves, a logic operation device using spin waves, a variety of spin wave devices employing the same, and a method of controlling phases of spi... | 04/24/2012 |
| 8164147 | Magnetic random access memory A magnetic random access memory includes a first bit line and a second bit line, a source line formed for a group having the first bit line and the second bit line, adjacent to the first bit line, and running in a first direction in which the first bit line and the ... | 04/24/2012 |
| 8143682 | Methods and systems for implementing logic gates with spintronic devices located at nanowire crossbar junctions of crossbar arrays Various method and system embodiments of the present invention are directed to implementing serial logic gates using nanowire-crossbar arrays with spintronic devices located at nanowire-crossbar junctions. In one embodiment of the present invention, a nanowire-cross... | 03/27/2012 |
| 8143683 | In-situ formed capping layer in MTJ devices A method of forming an integrated circuit includes forming magnetic tunnel junction (MTJ) layers; etching the MTJ layers to form a MTJ cell; and forming a dielectric capping layer on sidewalls of the MTJ cell, wherein the step of forming the dielectric capping layer... | 03/27/2012 |
| 8138561 | Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by a NOX process, a CoFeB/FeSiO/CoFeB composite free layer with a middle nanocurrent channel layer to minimize Jc0, and a Ru capping layer to enhance the spin scattering effect and increase dR/R.... | 03/20/2012 |
| 8138562 | Bit line preparation method in MRAM fabrication A MRAM structure is disclosed that includes a metal contact bridge (MCB) which provides an electrical connection between a MTJ top electrode and an overlying bit line. The MCB has a width greater than a MTJ top electrode and serves as an etch stop during bit line et... | 03/20/2012 |
| 8129806 | Magnetic memory device A magnetic memory device includes a magnetic tunnel junction (MTJ) structure and an electrode embedded in a dielectric structure. The MTJ structure includes a free layer. The electrode is formed of silicon-germanium and is electrically connected to the MTJ. The elec... | 03/06/2012 |
| 8120127 | Magnetic random access memory and method of manufacturing the same A domain wall motion type MRAM 100 has: a magnetic recording layer 10 that is a ferromagnetic layer; and a magnetic coupling layer 20 that is a ferromagnetic layer whose magnetization direction is fixed. The magnetic recording layer 10 ha... | 02/21/2012 |
| 8120126 | Magnetic tunnel junction device and fabrication A magnetic tunneling junction device and fabrication method is disclosed. In a particular embodiment, the method includes depositing a capping material on a free layer of a magnetic tunneling junction structure to form the capping layer and oxidizing a portion of th... | 02/21/2012 |
| 8110881 | MRAM cell structure with a blocking layer for avoiding short circuits A MRAM cell structure includes a bottom electrode; a magnetic tunnel junction unit disposed on the bottom electrode; a top electrode disposed on the magnetic tunnel junction unit; and a blocking layer disposed on the top electrode, wherein the blocking layer is wide... | 02/07/2012 |
| 8093669 | Magnetic nanotransistor The present invention discloses methods and processes for producing magnetic nanotransistors containing carbon nanotubes. The nanotube is attached to at least one magnetic particle, the nanotube is then placed in between the two fixed magnetic moments, and subjected... | 01/10/2012 |
| 8093668 | Magnetoresistive random access memory including reference cells A magnetoresistive random access memory includes first and second magnetoresistive effect element. A shape of the first magnetoresistive effect element has a first length in a first direction and a second length in a second direction. The second length is equal to o... | 01/10/2012 |
| 8089132 | Magnetic memory with phonon glass electron crystal material A magnetic memory unit includes a tunneling barrier separating a free magnetic element and a reference magnetic element. A first phonon glass electron crystal layer is disposed on a side opposing the tunneling barrier of either the free magnetic element or the refer... | 01/03/2012 |
| 8084835 | Non-uniform switching based non-volatile magnetic based memory A non-uniform switching based non-volatile magnetic memory element includes a fixed layer, a barrier layer formed on top of the fixed layer, a first free layer formed on top of the barrier layer, a non-uniform switching layer (NSL) formed on top of the first free la... | 12/27/2011 |
| 8063459 | Non-volatile magnetic memory element with graded layer A non-volatile magnetic memory element includes a number of layers one of which is a free layer which is graded. The graded free layer may include various elements with each element having a different anisotropy or it may include nonmagnetic compounds and magnetic r... | 11/22/2011 |
| 8063460 | Spin torque magnetic integrated circuits and devices therefor Spin torque magnetic integrated circuits and devices therefor are described. A spin torque magnetic integrated circuit includes a first free ferromagnetic layer disposed above a substrate. A non-magnetic layer is disposed above the first free ferromagnetic layer. A ... | 11/22/2011 |
| 8058697 | Spin transfer MRAM device with novel magnetic synthetic free layer We describe a CPP MTJ MRAM element that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The device includes a tunneling barrier layer of MgO and a non-magnetic CPP layer of Cu or Cr and utilizes a... | 11/15/2011 |
| 8058696 | High capacity low cost multi-state magnetic memory A multi-state current-switching magnetic memory element includes a stack of magnetic tunneling junction (MTJ) separated by a non-magnetic layer for storing more than one bit of information, wherein different levels of current applied to the memory element cause swit... | 11/15/2011 |
| 8058698 | High performance MTJ element for STT-RAM and method for making the same An STT-MTJ MRAM cell that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The device includes an IrMn pinning layer, a SyAP pinned layer, a naturally oxidized, crystalline MgO tunneling barrier la... | 11/15/2011 |
| 8053851 | Spin transistor using epitaxial ferromagnet-semiconductor junction A spin transistor conducive to the miniaturization and large scale integration of devices, because a magnetization direction of a source and a drain is determined by a direction of the epitaxial growth of a ferromagnet. The spin transistor includes a semiconductor s... | 11/08/2011 |
| 8039913 | Magnetic stack with laminated layer A magnetic stack with a multilayer free layer having a switchable magnetization orientation, the free layer comprising a first ferromagnetic portion and a second ferromagnetic portion with an electrically conducting non-magnetic intermediate layer between the first ... | 10/18/2011 |
| 8035177 | Magnetic stack with oxide to reduce switching current A magnetic stack having a ferromagnetic free layer, a metal oxide layer that is antiferromagnetic at a first temperature and non-magnetic at a second temperature higher than the first temperature, a ferromagnetic pinned reference layer, and a non-magnetic spacer lay... | 10/11/2011 |
| 8026562 | Magnetic memory element utilizing spin transfer switching A magnetic memory element includes a pinned layer, a tunneling barrier layer, a free layer and a stabilizing layer. The tunneling barrier layer is disposed on the pinned layer. The free layer is disposed on the tunneling barrier layer. The stabilizing layer is dispo... | 09/27/2011 |
| 8026563 | Spin transistor based on the spin-filter effect, and non-volatile memory using spin transistors A spin transistor comprises a spin injector for injecting, from a first nonmagnetic electrode carriers with a spin parallel to a spin band forming the band edge of a first ferromagnetic barrier layer, to a second nonmagnetic electrode layer, as hot carriers. It also... | 09/27/2011 |
| 8026561 | Spin MOSFET and reconfigurable logic circuit A spin MOSFET includes: a first ferromagnetic layer provided on an upper face of a semiconductor substrate, and having a fixed magnetization direction perpendicular to a film plane; a semiconductor layer provided on an upper face of the first ferromagnetic layer, in... | 09/27/2011 |
| 8018011 | Low cost multi-state magnetic memory A multi-state current-switching magnetic memory element has a magnetic tunneling junction (MTJ), for storing more than one bit of information. The MTJ includes a fixed layer, a barrier layer, and a non-uniform free layer. In one embodiment, having 2 bits per cell, w... | 09/13/2011 |
| 8013406 | Method and apparatus for generating giant spin-dependent chemical potential difference in non-magnetic materials A system, structure, and method of making the structure are disclosed for generating a large chemical potential difference between spin-up and spin-down electrons in non-magnetic materials. The device includes an inverse spin valve of a sandwiched layer structure wi... | 09/06/2011 |
| 8013407 | Magnetic memory device having a recording layer There is provided a magnetic memory device stable in write characteristics. The magnetic memory device has a recording layer. The planar shape of the recording layer has the maximum length in the direction of the easy-axis over a primary straight line along the easy... | 09/06/2011 |
| 8013408 | Negative-resistance device with the use of magneto-resistive effect A magneto-resistive device has a magnetic free layer (33), a magnetic pinned layer (31) having a magnetic moment larger than that of the magnetic free layer, and an intermediate layer (32) provided between the magnetic free layer and the magneti... | 09/06/2011 |
| 8004054 | Semiconductor device, method of manufacturing the same, and signal transmitting/receiving method using the semiconductor device A semiconductor device (100) including: a semiconductor substrate including a semiconductor chip formation region (102); a chip internal circuit (124); a signal transmitting/receiving inductor (114) which transmits/receives a signal to/fr... | 08/23/2011 |
| 7999338 | Magnetic stack having reference layers with orthogonal magnetization orientation directions A magnetic cell includes a ferromagnetic free layer having a free magnetization orientation direction and a first ferromagnetic pinned reference layer having a first reference magnetization orientation direction that is parallel or anti-parallel to the free magnetiz... | 08/16/2011 |
| 7999336 | ST-RAM magnetic element configurations to reduce switching current In order to increase an efficiency of spin transfer and thereby reduce the required switching current, a current perpendicular to plane (CPP) magnetic element for a memory device includes either one or both of a free magnetic layer, which has an electronically refle... | 08/16/2011 |
| 7999337 | Static magnetic field assisted resistive sense element Apparatus and associated method for writing data to a non-volatile memory cell, such as spin-torque transfer random access memory (STRAM). In accordance with some embodiments, a resistive sense element (RSE) has a heat assist region, magnetic tunneling junction (MTJ... | 08/16/2011 |
| 7994596 | Magnetic tunneling junction film structure with process determined in-plane magnetic anisotropy An MTJ memory cell and/or an array of such cells is provided wherein each such cell has a small circular horizontal cross-section of 1.0 microns or less in diameter and wherein the ferromagnetic free layer of each such cell has a magnetic anisotropy produced by a ma... | 08/09/2011 |
| 7994597 | MRAM with coupling valve switching The free layer in a magneto-resistive memory element is stabilized through being pinned by an antiferromagnetic layer. A control valve layer provides exchange coupling between this antiferromagnetic layer and the free layer. When writing data into the free layer, th... | 08/09/2011 |
