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| Number | Title | Issue Date |
| 8134150 | Hydrazine-free solution deposition of chalcogenide films A method of depositing a film of a metal chalcogenide including the steps of: contacting an isolated hydrazinium-based precursor of a metal chalcogenide and a solvent having therein a solubilizing additive to form a solution of a complex thereof; applying the soluti... | 03/13/2012 |
| 8124968 | Non-volatile memory device Provided are a non-volatile memory device which can be extended in a stack structure and thus can be highly integrated, and a method of manufacturing the non-volatile memory device. The non-volatile memory device includes: at least one first electrode, at least one ... | 02/28/2012 |
| 8110828 | Real time process monitoring and control for semiconductor junctions A method of manufacturing a semiconductor layer is provided. In a first deposition during a first period of time, at least one Group IIIA element and at least one Group VIA element are deposited on a substrate or on a layer optional disposed on the substrate such as... | 02/07/2012 |
| 8106394 | Multi-layer storage node, resistive random access memory device including a multi-layer storage node and methods of manufacturing the same A multi-layer storage node, resistive random access memory device and methods of manufacturing the same are provided. The resistive random access memory device includes a switching structure and a storage node connected to the switching structure. The storage node i... | 01/31/2012 |
| 8067766 | Multi-level memory cell A multi-level memory cell having a bottom electrode, a first dielectric layer, a plurality of memory material layers, a plurality of second dielectric layers, and an upper electrode is provided. The bottom electrode is disposed in a substrate. The first dielectric l... | 11/29/2011 |
| 8053772 | Hydrazine-free solution deposition of chalcogenide films A method of depositing a film of a metal chalcogenide including the steps of: contacting an isolated hydrazinium-based precursor of a metal chalcogenide and a solvent having therein a solubilizing additive to form a solution of a complex thereof; applying the soluti... | 11/08/2011 |
| 7999255 | Hydrazine-free solution deposition of chalcogenide films A method of depositing a film of a metal chalcogenide including the steps of: contacting an isolated hydrazinium-based precursor of a metal chalcogenide and a solvent having therein a solubilizing additive to form a solution of a complex thereof; applying the soluti... | 08/16/2011 |
| 7977674 | Phase change memory device and method of fabricating the same A phase change memory device and a method of fabricating the same are provided. A phase change material layer of the phase change memory device is formed of germanium (Ge)-antimony (Sb)-Tellurium (Te)-based Ge2Sb2+xTe5 (0.12≦x≦0.... | 07/12/2011 |
| 7968876 | Phase change memory cell having vertical channel access transistor Memory devices are described along with methods for manufacturing. A device as described herein includes a substrate having a first region and a second region. The first region comprises a first field effect transistor comprising first and second doped regions separ... | 06/28/2011 |
| 7960726 | Hydrazine-free solution deposition of chalcogenide films A method of depositing a film of a metal chalcogenide including the steps of: contacting an isolated hydrazinium-based precursor of a metal chalcogenide and a solvent having therein a solubilizing additive to form a solution of a complex thereof; applying the soluti... | 06/14/2011 |
| 7858980 | Reduced active area in a phase change memory structure A phase change memory structure and method for forming the same, the method including providing a substrate comprising a conductive area; forming a spacer having a partially exposed sidewall region at an upper portion of the spacer defining a phase change memory ele... | 12/28/2010 |
| 7851791 | Thin film transistor having N-type and P-type CIS thin films and method of manufacturing the same Provided is a thin film transistor (TFT) which uses CIS (CuInSe2), including Se, which is a chalcogen-based material, and can provide a rectifying function, and electric and optical switching functions of a diode. The TFT according to the present inventio... | 12/14/2010 |
| 7763886 | Doped phase change material and pram including the same Provided are a doped phase change material and a phase change memory device including the phase change material. The phase change material, which may be doped with Se, has a higher crystallization temperature than a Ge2Sb2Te5 (GST) m... | 07/27/2010 |
| 7741636 | Programmable resistive RAM and manufacturing method Integrated circuit nonvolatile memory uses programmable resistive elements. In some examples, conductive structures such as electrodes are prepared, and the programmable resistive elements are laid upon the prepared electrodes. This prevents contamination of the pro... | 06/22/2010 |
| 7709835 | Method to form high efficiency GST cell using a double heater cut Embodiments of the present invention provide a method that includes providing wafer including multiple cells, each cell including at least one emitter. The method further includes performing a lithographic operation in a word line direction of the wafer across the c... | 05/04/2010 |
| 7671360 | Semiconductor device and method of producing the same A phase change memory includes a sidewall insulation film and a heater electrode which are formed in a contact hole formed in an interlayer insulation film on a lower electrode. The heater electrode has a recessed structure. In a recessed area surrounded by the side... | 03/02/2010 |
| 7642549 | Phase change memory cells delineated by regions of modified film resistivity A Phase Change Memory (PCM) cell structure comprises both a lower electrode composed of a PCM layer and a conductive encapsulating upper electrode layer. The PCM layer is protected from damage by the conductive encapsulating layer. Electrical isolation between adjac... | 01/05/2010 |
| 7547913 | Phase-change memory device using Sb-Se metal alloy and method of fabricating the same Provided are a phase-change memory device using a phase-change material having a low melting point and a high crystallization speed, and a method of fabricating the same. The phase-change memory device includes an antimony (Sb)-selenium (Se) chalcogenide Sbx | 06/16/2009 |
| 7511297 | Phase change memory device and method of fabricating the same A phase change memory device and a method of fabricating the same are disclosed. The phase change memory device includes a first conductor pattern having a first conductivity type and a sidewall. A second conductor pattern is connected to the sidewall of the first c... | 03/31/2009 |
| 7422926 | Self-aligned process for manufacturing phase change memory cells A process for manufacturing phase change memory cells includes the step of forming a heater element in a semiconductor wafer and a storage region of a phase change material on and in contact with the heater element. In order to form the heater element and the phase ... | 09/09/2008 |
| 7381611 | Multilayered phase change memory A phase change layer may switch between more and less conductive states in response to electrical stimulation. The phase change layer may be positioned over a non-switching ovonic material which acts as an electrode, a resistive heater, and an insulating barrier. Th... | 06/03/2008 |
| 7374174 | Small electrode for resistance variable devices A memory element comprising first and second electrodes is provided. The first electrode is tapered such that a first end of the first electrode is larger than a second end of the first electrode. A resistance variable material layer is located between the first and... | 05/20/2008 |
| 7358521 | Lateral phase change memory and method therefor Briefly, in accordance with an embodiment of the invention, a lateral phase change memory and a method to manufacture a phase change memory is provided. The method may include forming a conductor material over a substrate and patterning the conductor material to for... | 04/15/2008 |
| 7351991 | Methods for forming phase-change memory devices Phase-change memory devices include a phase-change material layer and a first electrode having a contact area therebetween. The contact area extends into a recess of the first electrode to provide current density concentration. ... | 04/01/2008 |
| 7351992 | Forming nonvolatile phase change memory cell having a reduced thermal contact area The invention provides for a nonvolatile memory cell comprising a heater layer in series with a phase change material, such as a chalcogenide. Phase change is achieved in chalcogenide memories by thermal means. Concentrating thermal energy in a relatively small volu... | 04/01/2008 |
| 7335907 | Memory device A phase change memory device is provided which is constituted by memory cells using memory elements and select transistors and having high heat resistance to be capable of an operation at 140 degrees or higher. As a device configuration, a recording layer of which, ... | 02/26/2008 |
| 7332735 | Phase change memory cell and method of formation A phase change memory element and methods for forming the same are provided. The memory element includes a first electrode and a chalcogenide comprising phase change material layer over the first electrode. A metal-chalcogenide layer is over the phase change materia... | 02/19/2008 |
| 7323356 | LnCuO(S,Se,Te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film Disclosed is a method of producing an LnCuOX single-crystal thin film (wherein Ln is at least one selected from the group consisting of lanthanide elements and yttrium, and X is at least one selected from the group consisting of S, Se and Te), which comprises the st... | 01/29/2008 |
| 7288784 | Structure for amorphous carbon based non-volatile memory A memory device including at least one first memory element comprising a first layer of amorphous carbon over at least one second memory element comprising a second layer of amorphous carbon. The device also includes at least one first conductive layer common to the... | 10/30/2007 |
| 7288468 | Luminescent efficiency of semiconductor nanocrystals by surface treatment A method for improving the luminescent efficiency of semiconductor nanocrystals by surface treatment with a reducing agent to produce an improvement in luminescent efficiency and quantum efficiency without creating changes in the luminescent characteristics of the n... | 10/30/2007 |
| 7282730 | Forming a carbon layer between phase change layers of a phase change memory A carbon containing layer may be formed between a pair of chalcogenide containing layers of a phase change memory. When the lower chalcogenide layer allows current to pass, a filament may be formed therein. The filament then localizes the electrical heating of the c... | 10/16/2007 |
| 7253409 | Electrochemical nano-patterning using ionic conductors The present invention provides nano-patterning based on flow of an ion current within an ionic conductor to bring ions in proximity to a microscope probe tip touching a surface of the conductor. These ions are then electrochemically reduced to form one or more featu... | 08/07/2007 |
| 7229676 | Thermal imaging processes and products of electroactive organic material Processes for effecting thermal transfer of electroactive organic material are disclosed wherein unwanted portions of a layer of electroactive organic material supported by a donor element are removed or transferred from the layer by thermal transfer, particularly l... | 06/12/2007 |
| 7220982 | Amorphous carbon-based non-volatile memory A resistance variable memory element and a method for forming the same. The memory element has an amorphous carbon layer between first and second electrodes. A metal-containing layer is formed between the amorphous carbon layer and the second electrode. ... | 05/22/2007 |
| 7200318 | Near infra-red composite polymer-nanocrystal materials and electro-optical devices produced therefrom The invention comprises a composite material comprising a host material in which are incorporated semiconductor nanocrystals. The host material is light-transmissive and/or light-emissive and is electrical chargetransporting thus permitting electrical charge transpo... | 04/03/2007 |
| 7196466 | Organic Electroluminescence device suppressing brightness unevenness An electrode of the organic EL device includes a substantially rectangular electrode region that contacts an organic layer, a terminal section to which an external drive circuit is connected, and a conductive section that electrically connects the terminal section t... | 03/27/2007 |
| 7190033 | CMOS device and method of manufacture A CMOS device and manufacturing method thereof wherein a bilayer etch stop is used over a PMOS transistor, and a single etch stop layer is used for an NMOS transistor, for forming contacts to the source or drain of the CMOS device. A surface tension-reducing layer i... | 03/13/2007 |
| 7157716 | Semiconductor radiation detector and radiation detection apparatus The present invention provides a semiconductor radiation detector and radiation detection apparatus capable of improving energy resolution and the semiconductor radiation detection apparatus includes a semiconductor radiation detector and a signal processing circuit... | 01/02/2007 |
| 7157054 | Membrane type gas sensor and method for manufacturing membrane type gas sensor A gas sensor includes a semiconductor substrate and a sensing membrane. The sensing membrane is located at the bottom of a recess, which is formed by etching the substrate, and includes a heater, heater extension electrodes, a gas sensitive film, and gas-sensitive-f... | 01/02/2007 |
| 7151273 | Silver-selenide/chalcogenide glass stack for resistance variable memory The invention is related to methods and apparatus for providing a resistance variable memory element with improved data retention and switching characteristics. According to an embodiment of the invention a resistance variable memory element is provided having at le... | 12/19/2006 |
