Did You Know...
...that Thomas Edison's patent application on his phonograph was approved by the Patent Office in just seven weeks? In contrast, it took Gordon Gould, the inventor of the laser, 30 years to obtain his patent -- finally awarded in 1988!
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8044472 | Nanotube and graphene semiconductor structures with varying electrical properties Nanotube and graphene transducers are disclosed. A transducer according to the present invention can include a substrate, a plurality of semiconductive structures, one or more metal pads, and a circuit. The semiconductive structures can be nanotubes or graphene loca... | 10/25/2011 |
| 8039912 | Systems and methods for reduced stress anchors Anchor systems and methods anchor components of a Micro-Electro-Mechanical Systems (MEMS) device to a substrate. An exemplary embodiment has a trace anchor bonded to a substrate, a device anchor bonded to the substrate, and an anchor flexure configured flexibly coup... | 10/18/2011 |
| 7843024 | Method and structure for improving device performance variation in dual stress liner technology A method and semiconductor structure that overcome the dual stress liner boundary problem, without significantly increasing the overall size of the integrated circuit, are provided. In accordance with the present invention, the dual stress liner boundary or gap ther... | 11/30/2010 |
| 7808061 | Multi-die apparatus including moveable portions An electronic apparatus includes a first die, a second die, a third die, and a fourth die, wherein a portion of the second die and a portion of the third die are movably connected between the first die and the fourth die. ... | 10/05/2010 |
| 7781851 | Semiconductor device having reduced die-warpage and method of manufacturing the same A semiconductor device and a method of manufacturing the same reduce die-warpage. The semiconductor device includes a substrate and a first layer of material extending substantially over the entire surface of the substrate. A stress-relieving pattern exists in and t... | 08/24/2010 |
| 7737514 | MEMS pressure sensor using area-change capacitive technique A micro-electro-mechanical system (MEMS) pressure sensor includes a silicon spacer defining an opening, a silicon membrane layer mounted above the spacer, and a silicon sensor layer mounted above the silicon membrane layer. The silicon membrane layer forms a diaphra... | 06/15/2010 |
| 7705413 | Micromechanical component and method for producing a micromechanical component A micromechanical component, in particular a micromechanical sensor, having a first wafer and a second wafer is provided, the first wafer having at least one structural element, and the second wafer having at least one mating structural element, and, in addition, th... | 04/27/2010 |
| 7436037 | Moisture resistant pressure sensors A differential pressure sensor has a semiconductor wafer having a top and bottom surface. The top surface of the wafer has a central active area containing piezoresistive elements. These elements are passivated and covered with a layer of silicon dioxide. Each eleme... | 10/14/2008 |
| 7432542 | Semiconductor device with electrostrictive layer in semiconductor layer and method of manufacturing the same A semiconductor device includes a first semiconductor layer, and a first insulated-gate field-effect transistor of a first conductivity type that is provided in a major surface region of the first semiconductor layer. The semiconductor device further includes an ele... | 10/07/2008 |
| 7427797 | Semiconductor device having actuator A semiconductor device having a surface MEMS element, includes a semiconductor substrate, and an actuator which is arranged above the semiconductor substrate via a space and has a lower electrode, an upper electrode, and a piezoelectric layer sandwiched between the ... | 09/23/2008 |
| 7425749 | MEMS pixel sensor A MEMS pixel sensor is provided with a thin-film mechanical device having a mechanical body, with a mechanical state responsive to a proximate environment. A thin-film electronic device converts the mechanical state into electrical signals. A pixel interface supplie... | 09/16/2008 |
| 7388267 | Selective stress engineering for SRAM stability improvement An integrated circuit (IC) structure including a SRAM cell is provided in which the performance of the pass-gate transistors is degraded in order to increase the beta ratio of the transistors within the SRAM cell. In particular, the increased beta ratio is obtained ... | 06/17/2008 |
| 7372115 | Thermally isolated membrane structure An MEMS device including a semiconductor substrate having an upper and lower surface, and a support structure disposed at least partially in the semiconductor substrate. The support structure includes a plurality of support members oriented to define a plurality of ... | 05/13/2008 |
| 7367119 | Method for forming a reinforced tip for a probe storage device Systems and methods in accordance with the present invention can include a tip contactable with a media. In an embodiment, the tip comprises a substantially hollow structure formed of a metal. The tip can be formed by depositing a first metal layer over silicon ther... | 05/06/2008 |
| 7355268 | High reflector tunable stress coating, such as for a MEMS mirror An optical device having a high reflector tunable stress coating includes a micro-electromechanical system (MEMS) platform, a mirror disposed on the MEMS platform, and a multiple layer coating disposed on the mirror. The multiple layer coating includes a layer of si... | 04/08/2008 |
| 7354787 | Electrode design and positioning for controlled movement of a moveable electrode and associated support structure A MEMS system including a fixed electrode and a suspended moveable electrode that is controllable over a wide range of motion. In traditional systems where an fixed electrode is positioned under the moveable electrode, the range of motion is limited because the supp... | 04/08/2008 |
| 7348646 | Micromechanical capacitive transducer and method for manufacturing the same A micromechanical capacitive converter and a method for manufacturing a micromechanical converter comprise a movable membrane and an electrically conductive face element in a carrier layer. The electrically conductive face element is arranged opposite the membrane a... | 03/25/2008 |
| 7339214 | Methods and apparatus for inducing stress in a semiconductor device Methods and apparatus are disclosed for selectively inducing stress in a semiconductor device, wherein a first region of a substrate is implanted so as to induce stress in a second region. An electrical device is formed at least partially in the second region, where... | 03/04/2008 |
| 7336524 | Atomic probes and media for high density data storage A device in accordance with embodiments of the present invention comprises a contact probe for high density data storage reading, writing, erasing, or rewriting. In one embodiment, the contact probe can include a silicon core having a conductive coating. Contact pro... | 02/26/2008 |
| 7326974 | Sensor for measuring a gas concentration or ion concentration A field-effect transistor used as a sensor for measuring a gas or ion concentration utilizes a surface structure such as rings along with surface profiling, for example elevations of the rings and depressions therebetween, to decrease the surface conductivity betwee... | 02/05/2008 |
| 7320250 | Pressure sensing element and sensor incorporating the same A pressure sensor includes a sensor chip in which a diaphragm is provided, and a case to which the sensor chip is directly mounted by an adhesive. A groove that surrounds the diaphragm is provided on the rear surface of the sensor chip between the bonded part and th... | 01/22/2008 |
| 7320896 | Infrared radiation detector Electronic devices are disclosed that may be used for infrared radiation detection. An example electronic device includes a substrate, a transistor included in the substrate and a silicon-germanium (Si—Ge) structural layer coupled with the transistor. The structur... | 01/22/2008 |
| 7312096 | Nanotube semiconductor structures with varying electrical properties There is disclosed a nanotube sensor which essentially employs a straight or twisted nanotube deposited on a supporting surface, such as silicon, silicon dioxide and some other semiconductor or metal material. The nanotube is basically a graphite device which is now... | 12/25/2007 |
| 7312485 | CMOS fabrication process utilizing special transistor orientation Complementary metal oxide semiconductor transistors are formed on a silicon substrate. The substrate has a {100} crystallographic orientation. The transistors are formed on the substrate so that current flows in the channels of the transistors are parallel to the | 12/25/2007 |
| 7309902 | Microelectronic device with anti-stiction coating One embodiment of a microelectronic device includes a movable plate including a lower surface, a bump positioned on the lower surface, and an anti-stiction coating positioned only on the bump. ... | 12/18/2007 |
| 7309630 | Method for forming patterned media for a high density data storage device Systems in accordance with the present invention can include a tip contactable with a media, the media including a substrate and a plurality of cells disposed over the substrate, one or more of the cells being electrically isolated from the other of the cells by a m... | 12/18/2007 |
| 7302858 | MEMS capacitive cantilever strain sensor, devices, and formation methods An embodiment of the invention provides a MEMS cantilever strain sensor. Capacitor plates in a MEMS device of the invention are carried on cantilevered opposing micro-scale plates separated by a micro-scale gap under an unstrained condition. At least one of the micr... | 12/04/2007 |
| 7304358 | MOS transistor with a deformable gate A MOS transistor with a deformable gate formed in a semiconductor substrate, including source and drain areas separated by a channel area extending in a first direction from the source to the drain and in a second direction perpendicular to the first one, a conducti... | 12/04/2007 |
| 7300815 | Method for fabricating a gold contact on a microswitch Described is a process to pattern adhesion and top contact layers in such a way that at least some portion of the top contact layers overlaps the adhesion layer, while another portion of the top contact layer overlaps with the bottom contacts, but does not overlap w... | 11/27/2007 |
| 7301213 | Acoustic sensor A sound hole is provided in a silicon substrate. A diaphragm electrode is secured to the upper surface of the silicon substrate via at least one fixed end so as to cover the sound hole of the silicon substrate. The diaphragm electrode is provided with four projectio... | 11/27/2007 |
| 7279760 | Nanotube relay device The present invention relates to a nanotube device (100, 600), comprising a nanotube with a longitudinal and a lateral extension, a structure for supporting at least a first part of the nanotube, and first means for exerting a force upon the nanotube in a fir... | 10/09/2007 |
| 7270868 | Micromechanical component A component having a surface micromechanical structure containing both movable elements and immovable elements, and a method of manufacturing same are described. The surface micromechanical structure of the component is produced in a functional layer, which is conne... | 09/18/2007 |
| 7260051 | Molecular memory medium and molecular memory integrated circuit A molecular memory media having a media surface and a platform with read/write heads. The platform and media are moved to allow one of addition, removal, and repositioning of atoms, electrons, and charges on a surface of the media. The media is a material capable of... | 08/21/2007 |
| 7253488 | Piezo-TFT cantilever MEMS A piezo-TFT cantilever microelectromechanical system (MEMS) and associated fabrication processes are provided. The method comprises: providing a substrate, such as glass for example; forming thin-films overlying the substrate; forming a thin-film cantilever beam; an... | 08/07/2007 |
| 7253016 | Micromechanical capacitive transducer and method for producing the same A micromechanical capacitive converter and a method for manufacturing a micromechanical converter comprise a movable membrane and an electrically conductive face element in a carrier layer. The electrically conductive face element is arranged opposite the membrane a... | 08/07/2007 |
| 7233517 | Atomic probes and media for high density data storage A device in accordance with embodiments of the present invention comprises an atomic probe for high density data storage reading, writing, erasing, or rewriting. In one embodiment, the atomic probe can include a core having a conductive coating. The core can compris... | 06/19/2007 |
| 7183620 | Moisture resistant differential pressure sensors A differential pressure sensor has a semiconductor wafer having a top and bottom surface. The top surface of the wafer has a central active area containing piezoresistive elements. These elements are passivated and covered with a layer of silicon dioxide. Each eleme... | 02/27/2007 |
| 7176540 | Method for producing micromechanical structures and a micromechanical structure A method for producing micromechanical structures, in which a functional layer is deposited onto a sacrificial layer, and the sacrificial layer is removed again for the production of at least one mechanical functional element, which is characterized by a surface bar... | 02/13/2007 |
| 7176541 | Pressure sensor A pressure sensor chip includes a diaphragm and pads. A flexible printed circuit board (FPC) includes a resin sheet having a through-hole and wiring patterns that are formed within the resin sheet and sealed. The resin sheet is press-fitted to the pressure sensor ch... | 02/13/2007 |
| 7153717 | Encapsulation of MEMS devices using pillar-supported caps This invention comprises a process for fabricating a MEMS microstructure in a sealed cavity wherein the etchant entry holes are created as a by-product of the fabrication process without an additional step to etch holes in the cap layer. The process involves extendi... | 12/26/2006 |
