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A resilient headband in a shape for being mounted on the head of the user. The headband is equipped with a longitudinal slotted member for holding a placard.

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Class 257/417 - Strain sensors


Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter wherein the physically deforming force is
No. of patents: 554
Last issue date: 05/08/2012


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NumberTitleIssue Date
8174085Method of manufacturing MEMS sensor and MEMS sensor
A method of manufacturing an MEMS sensor according to the present invention includes the steps of: forming a first sacrificial layer on one surface of a substrate; forming a lower electrode on the first sacrificial layer; forming a second sacrificial layer made of a...
05/08/2012
8174084Stress sensor for in-situ measurement of package-induced stress in semiconductor devices
A stress sensor is disclosed herein. The stress sensor includes a plurality of carbon nanotubes in a substrate, and first and second contacts electrically connectable with the plurality of carbon nanotubes. Methods of making and using the stress sensor are also disc...
05/08/2012
8154094Micromechanical component having a cap having a closure
A micromechanical component having a substrate, having a cavity and having a cap that bounds the cavity. The cap has an access opening to the cavity. The cap has a diaphragm for closing the access opening. ...
04/10/2012
8106471Semiconductor dynamic quantity sensor and method of producing the same
A semiconductor dynamic quantity sensor includes a sensor part and a cap connected to the sensor part. Dynamic quantity is detected based on a capacitance of a capacitor defined between a movable electrode and a fixed electrode of the sensor part. A float portion of...
01/31/2012
8076738Integrally fabricated micromachine and logic elements
Embodiments of the invention are related to micromachine structures. In one embodiment, a micromachine structure comprises a first electrode, a second electrode, and a sensing element. The sensing element is mechanically movable and is disposed intermediate the firs...
12/13/2011
8063457Semiconductor strain gauge and the manufacturing method
A high-density impurity diffused layer of an identical conduction type to the semiconductor substrate on which the impurity is doped higher in density than the semiconductor substrate around the diffuse resistance region is provided, one side of the electrodes is fo...
11/22/2011
8013405Transducer with fluidly isolated connection
A transducer for use in a harsh environment including a substrate and a transducer die directly coupled to the substrate by a bond frame positioned between the substrate and the transducer die. The transducer die includes a transducer element which provides an outpu...
09/06/2011
8008739Microelectromechanical apparatus and method for producing the same
A microelectromechanical apparatus (X) includes a microelectromechanical component (10), an insulating substrate (21), a through via (22c) disposed in the insulating substrate (21), a sealing member (30) and a conductive con...
08/30/2011
8004053Micromechanical device and method of manufacturing micromechanical device
A micromechanical device according to an aspect of the present invention includes, a substrate, a micromachine which is mounted on the substrate, is provided with a mechanism deformed by a function of an electric field, and changes the electrical characteristics con...
08/23/2011
7956430Semiconductor device including groove width variation portion for inspection
An accelerator sensor includes a semiconductor substrate having a main front surface and a main rear surface, a first groove portion being formed along a front surface pattern, in the main front surface, a second groove portion being formed along a rear surface patt...
06/07/2011
7952154High temperature resistant solid state pressure sensor
A harsh environment transducer including a substrate having a first surface and a second surface, wherein the second surface is in communication with the environment. The transducer includes a device layer sensor means located on the substrate for measuring a parame...
05/31/2011
7932570Silicon tab edge mount for a wafer level package
A Micro-ElectroMechanical Systems (MEMS) device having electrical connections (a metallization pattern) available at an edge of the MEMS die. The metallization pattern on the edge of the die allows the die to be mounted on edge with no further packaging, if desired....
04/26/2011
7906823MEMS apparatus and method of manufacturing the same
A MEMS apparatus includes a MEMS unit formed on a semiconductor substrate and a cover provided with a pore and serving to seal the MEMS unit. The pore is sealed with a sealing material shaped in a sphere or a hemisphere. ...
03/15/2011
7880248Destructor integrated circuit chip, interposer electronic device and methods
A semiconductor device. The device includes a substrate and an integrated circuit chip. The device also includes an electrically or thermally reactive layer located between a top surface of the substrate and a bottom surface of the integrated circuit chip, wherein t...
02/01/2011
7868403Integrated MEMS resonator device
The present invention provides a method for manufacturing a micro-electro-mechanical system (MEMS) resonator device using the same device layer, dielectric layer, and conductive layer that is used to create other electrical devices in a complementary metal oxide sem...
01/11/2011
7843023Electromechanical switch
An electromechanical filter of the present invention is an electromechanical switch formed on a substrate. The switch has a fixed electrode which is to become a signal transmission line, and a movable electrode formed in a levitating manner while being spaced from t...
11/30/2010
7821085Physical quantity sensor and method for manufacturing the same
A physical quantity sensor includes: a sensor substrate including a first support substrate, a first insulation film and a first semiconductor layer, which are stacked in this order; a cap substrate including a second support substrate disposed on the first semicond...
10/26/2010
7795694Quantum device, manufacturing method of the same and controlling method of the same
By bringing a tip of an AFM into contact with the surface of a GaAs substrate or an AlGaAs substrate, for example, applying a negative bias to the tip, and applying a positive bias to the GaAs substrate or the AlGaAs substrate, a donut-shaped oxide film is formed. T...
09/14/2010
7795693Flat substrate having an electrically conductive structure
The description is of a flat substrate with an electrically conductive structure integrated inside the flat substrate or applied to a surface of the flat substrate and/or with a technically improved surface. The invention is characterised in that at least one...
09/14/2010
7791151Force input control device and method of fabrication
Method of fabricating 3-dimensional force input control device are disclosed. These roughly follow a process of providing a first substrate having side one and side two, fabricating stress-sensitive IC components and signal processing IC on the side one of the first...
09/07/2010
7768082Surface-shape sensor and method of manufacturing the same
According to the present embodiment, a surface-shape sensor is provided. The surface-shape sensor includes a silicon substrate, an interlayer insulating film formed over the silicon substrate, a first moisture-barrier insulating film formed on the interlayer insulat...
08/03/2010
7763947Piezo-diode cantilever MEMS
A piezo thin-film diode (piezo-diode) cantilever microelectromechanical system (MEMS) and associated fabrication processes are provided. The method deposits thin-films overlying a substrate. The substrate can be made of glass, polymer, quartz, metal foil, Si, sapphi...
07/27/2010
7705412SOI substrate and semiconductor acceleration sensor using the same
According to the present invention, a SOI substrate includes a first silicon substrate having first and second surfaces; a second silicon substrate having first and second surfaces; and a first insulating layer formed between first surface of the first silicon subst...
04/27/2010
7671431Cloverleaf microgyroscope with through-wafer interconnects and method of manufacturing a cloverleaf microgyroscope with through-wafer interconnects
The present invention relates to a method of manufacturing a cloverleaf microgyroscope containing an integrated post comprising: attaching a post wafer to a resonator wafer, forming a bottom post from the post wafer being attached to the resonator wafer, preparing a...
03/02/2010
7615835Package for semiconductor acceleration sensor
A semiconductor device comprises a package having a cavity in the interior thereof, a chip having a semiconductor element, a board having the chip fixed to a first region on the upper face thereof, and an adhesive portion formed in a second region on the bottom face...
11/10/2009
7608900Semiconductor device and method of manufacturing and inspection thereof
An accelerator sensor includes a semiconductor substrate having a main front surface and a main rear surface, a first groove portion being formed along a front surface pattern, in the main front surface, a second groove portion being formed along a rear surface patt...
10/27/2009
7554168Semiconductor acceleration sensor device
A semiconductor device comprises a package having a cavity in the interior thereof, a chip having a semiconductor element, and an adhesive portion comprised of a silicone or fluorine resin and particles each having a predetermined shape. The adhesive portion fixes t...
06/30/2009
7518202Mechanical quantity measuring apparatus
A semiconductor mechanical quantity measuring apparatus in which the reverse surface of a strain-detecting semiconductor element is bonded to an object of measurement, and a member having a small elastic modulus is interposed between the wiring board for supporting ...
04/14/2009
7495301Thin film accelerometer
A thin film structure including a conductive thin film provided on a substrate and configured to be displaced in response to an applied acceleration, a pair of electrode pads formed on the substrate such that the pair of electrode pads are disposed on respective sid...
02/24/2009
7489013Destructor integrated circuit chip, interposer electronic device and methods
A semiconductor device. The device includes a substrate and an integrated circuit chip. The device also includes an electrically or thermally reactive layer located between a top surface of the substrate and a bottom surface of the integrated circuit chip, wherein t...
02/10/2009
7466000Semiconductor device having multiple substrates
A semiconductor device includes a first substrate including first, second and third layers; a second substrate; and a loop bump. The first and second substrates provides an electric device and physical quantity sensor. The first layer is a shield for protecting the ...
12/16/2008
7462918Pressure sensor having gold-silicon eutectic crystal layer interposed between contact layer and silicon substrate
A pressure sensor includes a gold-silicon eutectic crystal layer interposed between the contact layer and the silicon substrate. Because the contact layer and the silicon substrate are electrically connected to each other by using a gold-silicon eutectic reaction at...
12/09/2008
7443002Encapsulated microstructure and method of producing one such microstructure
A microstructure including in a first layer insulated from a substrate by an insulator layer at least one sensitive element connected to at least one contact pad by an electrical connection and protected by a package cap. The sensitive element, the electrical connec...
10/28/2008
7436037Moisture resistant pressure sensors
A differential pressure sensor has a semiconductor wafer having a top and bottom surface. The top surface of the wafer has a central active area containing piezoresistive elements. These elements are passivated and covered with a layer of silicon dioxide. Each eleme...
10/14/2008
7427797Semiconductor device having actuator
A semiconductor device having a surface MEMS element, includes a semiconductor substrate, and an actuator which is arranged above the semiconductor substrate via a space and has a lower electrode, an upper electrode, and a piezoelectric layer sandwiched between the ...
09/23/2008
7425749MEMS pixel sensor
A MEMS pixel sensor is provided with a thin-film mechanical device having a mechanical body, with a mechanical state responsive to a proximate environment. A thin-film electronic device converts the mechanical state into electrical signals. A pixel interface supplie...
09/16/2008
7405099Wide and narrow trench formation in high aspect ratio MEMS
Methods have been provided for forming both wide and narrow trenches on a high-aspect ratio microelectromechanical (MEM) device on a substrate including a substrate layer (126), an active layer (128), and a first sacrificial layer (130) disposed...
07/29/2008
7394138Capacitance-type dynamic-quantity sensor and manufacturing method therefor
A capacitance-type dynamic-quantity sensor has a silicon substrate having etched recessed upper and lower surface portions forming a weight supported by beam portions and mounted to undergo displacement due to an applied external dynamic quantity such as acceleratio...
07/01/2008
7393711Method of producing a digital fingerprint sensor and the corresponding sensor
An embodiment of the present invention related to fingerprint sensors is described. The sensor comprises an integrated-circuit chip having a sensitive surface, a substrate provided with electrical connections and wire-bonding wires connecting the chip to the electri...
07/01/2008
7380461Micro-electromechanical capacitive strain sensor
A micro-electromechanical capacitive strain sensor. The micro-electromechanical capacitive strain sensor comprises a first bent beam, a second bent beam, and a straight center beam. The first bent beam, second bent beam, and straight center beam are aligned in the X...
06/03/2008
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