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| Number | Title | Issue Date |
| 8178934 | Dielectric film with hafnium aluminum oxynitride film The present invention provides a method of manufacturing a dielectric film having a high permittivity. An embodiment of the present invention is a method of manufacturing, on a substrate, a dielectric film including a metallic oxynitride containing an element A made... | 05/15/2012 |
| 8154090 | Non-volatile two-transistor semiconductor memory cell and method for producing the same The invention relates to a nonvolatile semiconductor memory cell and to an associated fabrication method, a source region (7), a drain region (8) and a channel region lying in between being formed in a substrate (1). In order to realize locally ... | 04/10/2012 |
| 8154091 | Integrated electronic circuit including a thin film portion based on hafnium oxide An integrated electronic circuit has a thin layer portion based on hafnium oxide. This portion additionally contains magnesium atoms, so that the portion is in the form of a hafnium-and-magnesium mixed oxide. Such a portion has a high dielectric constant and a very ... | 04/10/2012 |
| 8125038 | Nanolaminates of hafnium oxide and zirconium oxide A dielectric film containing a HfO2/ZrO2 nanolaminate and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. A dielectric layer ... | 02/28/2012 |
| 8120124 | Ultra thin TCS (SiCl) cell nitride for DRAM capacitor with DCS (SiHCl) interface seeding layer A method for forming silicon nitride films on semiconductor devices is provided. In one embodiment of the method, a silicon-comprising substrate is first exposed to a mixture of dichlorosilane (DCS) and a nitrogen-comprising gas to deposit a thin silicon nitride see... | 02/21/2012 |
| 8115262 | Dielectric multilayer structures of microelectronic devices and methods for fabricating the same A dielectric multilayer structure of a microelectronic device, in which a leakage current characteristic and a dielectric constant are improved, is provided in an embodiment. The dielectric multilayer structure includes a lower dielectric layer, which is made of amo... | 02/14/2012 |
| 8106469 | Methods and apparatus of fluorine passivation The present disclosure provides methods and apparatus of fluorine passivation in IC device fabrication. In one embodiment, a method of fabricating a semiconductor device includes providing a substrate and passivating a surface of the substrate with a mixture of hydr... | 01/31/2012 |
| 8102013 | Lanthanide doped TiOfilms The use of atomic layer deposition (ALD) to form an amorphous dielectric layer of titanium oxide (TiOX) doped with lanthanide elements, such as samarium, europium, gadolinium, holmium, erbium and thulium, produces a reliable structure for use in a variety... | 01/24/2012 |
| 8084834 | Semiconductor device and method for manufacturing same A semiconductor device of the present invention includes: a semiconductor layer; a gate insulation film provided on the semiconductor layer and including at least one of Hf and Zr; and a gate electrode provided on the gate insulation film and including a carbonitrid... | 12/27/2011 |
| 8067809 | Semiconductor storage device including a gate insulating film with a favorable nitrogen concentration profile and method for manufacturing the same A semiconductor storage device with excellent electrical characteristics (write/erase characteristics) by favorable nitrogen concentration profile of a gate insulating film, and a method for manufacturing the semiconductor device. The semiconductor device fabricatin... | 11/29/2011 |
| 8063452 | Semiconductor device and method for manufacturing the same A gate insulating film having a high dielectric constant, a semiconductor device provided with the gate insulating film, and a method for manufacturing such film and device are provided. The semiconductor device is provided with a group 14 (IVA) semiconductor board ... | 11/22/2011 |
| 8053849 | Replacement metal gate transistors with reduced gate oxide leakage Thin effective gate oxide thickness with reduced leakage for replacement metal gate transistors is achieved by forming a protective layer between the gate oxide layer and metal gate electrode, thereby reducing stress. Embodiments include forming a protective layer o... | 11/08/2011 |
| 8030717 | Semiconductor device A disclosed semiconductor device includes a gate insulation film formed on a silicon substrate and a metal gate electrode formed in the gate insulation film, wherein the gate insulation film includes a first insulation film, a second insulation film that is formed o... | 10/04/2011 |
| 8013402 | Transistors with multilayered dielectric films Transistors that include multilayered dielectric films on a channel region are provided. The multilayered dielectric comprises a lower dielectric film that may have a thickness that is at least 50% the thickness of the multilayered dielectric film and that comprises... | 09/06/2011 |
| 7994591 | Semiconductor device and method for manufacturing the same Disclosed are a semiconductor device and a method for manufacturing the same. The semiconductor device includes a gate structure which includes a silicon oxynitride (SiON) layer formed on a semiconductor substrate, a hafnium silicon oxynitride (HfSiON) layer formed ... | 08/09/2011 |
| 7989903 | Semiconductor device with extension structure and method for fabricating the same A semiconductor device includes a semiconductor region, a source region, a drain region, a source extension region a drain extension region, a first gate insulation film, a second gate insulation film, and a gate electrode. The source region, drain region, source ex... | 08/02/2011 |
| 7986016 | Semiconductor device and associated manufacturing methodology for decreasing thermal instability between an insulating layer and a substrate According to an aspect of the present invention, there is provided a semiconductor device including: a substrate that includes a semiconductor region including Ge as a primary component; a compound layer that is formed above the semiconductor region, that includes G... | 07/26/2011 |
| 7960803 | Electronic device having a hafnium nitride and hafnium oxide film The use of atomic layer deposition (ALD) to form a dielectric layer of hafnium nitride (Hf3N4) and hafnium oxide (HfO2) and a method of fabricating such a combination gate and dielectric layer produces a reliable structure for use in... | 06/14/2011 |
| 7956426 | Lanthanide dielectric with controlled interfaces Methods and devices for a dielectric are provided. One method embodiment includes forming a passivation layer on a substrate, wherein the passivation layer contains a composition of silicon, oxygen, and nitrogen. The method also includes forming a lanthanide dielect... | 06/07/2011 |
| 7936026 | Semiconductor device and method of manufacturing the same A semiconductor device may include a semiconductor substrate, a diffusion layer provided over the semiconductor substrate, source and drain diffusion regions provided in upper regions of the diffusion layer, a gate insulating film provided over the source and drain ... | 05/03/2011 |
| 7915694 | Gate electrode having a capping layer A method of manufacturing a semiconductor device and a novel semiconductor device are disclosed herein. An exemplary method includes sputtering a capping layer in-situ on a gate dielectric layer, before any high temperature processing steps are performed. ... | 03/29/2011 |
| 7875938 | LDMOS device with multiple gate insulating members An LDMOS device and method of fabrication are provided. The LDMOS device has a substrate with a source region and a drain region formed in the substrate. An insulating layer is provided on a portion of the substrate between the source and the drain region, such that... | 01/25/2011 |
| 7863695 | Complementary MISFET semiconductor device having an atomic density ratio aluminum/lanthanum (Al/La) in the gate insulating layer of PMIS is larger than that of the NMIS A complementary semiconductor device includes a semiconductor substrate, a first semiconductor region formed on a surface of the semiconductor substrate, a second semiconductor region formed on the surface of the semiconductor substrate apart from the first semicond... | 01/04/2011 |
| 7859066 | Nonvolatile semiconductor memory device and method of manufacturing the same A nonvolatile semiconductor memory device has a plurality of memory strings each including a plurality of electrically rewritable memory cells serially connected. The memory string includes a columnar semiconductor portion extending in the vertical direction from a ... | 12/28/2010 |
| 7834408 | Semiconductor device and method for manufacturing the same It is possible to prevent the deterioration of device characteristic as much as possible. A semiconductor device includes: a semiconductor substrate; a gate insulating film provided above the semiconductor substrate and containing a metal, oxygen and an additive ele... | 11/16/2010 |
| 7812412 | Semiconductor device According to the present invention, a semiconductor device having a field effect transistor is provided. The field effect transistor comprises a gate insulating film 2 formed on a semiconductor layer 1 and a gate electrode 5 formed on the gate i... | 10/12/2010 |
| 7812413 | MOSFET devices and methods for making them A semiconductor device is disclosed. The device comprises a first MOSFET transistor. The transistor comprises a substrate, a first high-k dielectric layer upon the substrate, a first dielectric capping layer upon the first high-k dielectric, and a first gate electro... | 10/12/2010 |
| 7808057 | PMOS transistor with increased effective channel length in the peripheral region and method of manufacturing the same In manufacturing a PMOS transistor, a semiconductor substrate having an active region and a field region is formed with a hard mask layer, which covers a center portion of the active region on the substrate in a lengthwise direction of a channel. The hard mask layer... | 10/05/2010 |
| 7804146 | Semiconductor device and method for fabricating the same A semiconductor device includes an N-type MOS transistor and a P-type MOS transistor. The N-type MOS transistor has a first gate insulating film and a first gate electrode. The P-type MOS transistor has a second gate insulating film and a second gate electrode. The ... | 09/28/2010 |
| 7786539 | Dieletric film layered product In order to provide a dielectric film which can avoid both boron leakage and an increase of the leak current, a semiconductor apparatus which has the dielectric film, a production method of the dielectric film and a production method of the semiconductor apparatus, ... | 08/31/2010 |
| 7768080 | Multilayer dielectric An apparatus and method relating to a first inorganic dielectric layer having a first concentration of defects and a second inorganic dielectric layer in contact with a first layer and having a second lesser concentration of defects are disclosed. ... | 08/03/2010 |
| 7759746 | Semiconductor device with gate dielectric containing aluminum and mixed rare earth elements A semiconductor device, such as a transistor or capacitor, is provided. The device includes a substrate, a gate dielectric over the substrate, and a conductive gate electrode film over the gate dielectric. The gate dielectric includes a mixed rare earth aluminum oxi... | 07/20/2010 |
| 7759747 | Tantalum aluminum oxynitride high-κ dielectric Electronic apparatus and methods of forming the electronic apparatus may include a tantalum aluminum oxynitride film for use in a variety of electronic systems and devices. The tantalum aluminum oxynitride film may be structured as one or more monolayers. The tantal... | 07/20/2010 |
| 7741684 | Semiconductor device and method for fabricating the same The semiconductor device comprises a gate insulating film including a first dielectric film of HfxAl1-xOy (0.7 | 06/22/2010 |
| 7737511 | Semiconductor device and method of manufacturing the same There is provided a method of manufacturing a semiconductor device, including forming a structure including a first layer containing Si and a metal oxide layer in contact with the first layer, the metal oxide layer having a dielectric constant higher than that of si... | 06/15/2010 |
| 7719065 | Ruthenium layer for a dielectric layer containing a lanthanide oxide A ruthenium layer for a dielectric layer containing a lanthanide layer and a method of fabricating such a combination of ruthenium layer and dielectric layer produce a reliable structure for use in a variety of electronic devices. A ruthenium or a conductive rutheni... | 05/18/2010 |
| 7709909 | Method for making a semiconductor device having a high-k gate dielectric A method for making a semiconductor device is described. That method comprises forming an oxide layer on a substrate, and forming a high-k dielectric layer on the oxide layer. The oxide layer and the high-k dielectric layer are then annealed at a sufficient temperat... | 05/04/2010 |
| 7696584 | Reduced leakage power devices by inversion layer surface passivation A semiconductor device is disclosed that includes a contact and an adjacent film on the surface of an underlying doped semiconductor material. The film has sufficient fixed charge to create an inversion layer adjacent the surface of the doped semiconductor material ... | 04/13/2010 |
| 7679148 | Semiconductor device, production method and production device thereof The task of the present invention is to enable formation of a gate insulating film structure having a good-quality interface between a silicon oxide film and silicon in an interface between a high dielectric constant thin film and a silicon substrate to provide a se... | 03/16/2010 |
| 7655994 | Low threshold voltage semiconductor device with dual threshold voltage control means A semiconductor structure, particularly a pFET, which includes a dielectric material that has a dielectric constant of greater than that of SiO2 and a Ge or Si content of greater than 50% and at least one other means for threshold/flatband voltage tuning ... | 02/02/2010 |
