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| Number | Title | Issue Date |
| 8183647 | Semiconductor device and manufacturing method for silicon oxynitride film The present invention provides a semiconductor device comprising: a silicon based semiconductor substrate provided with a step including an non-horizontal surface, a horizontal surface and a connection region for connecting the non-horizontal surface and the horizon... | 05/22/2012 |
| 8159037 | Stack structure comprising epitaxial graphene, method of forming the stack structure, and electronic device comprising the stack structure Provided are a stack structure including an epitaxial graphene, a method of forming the stack structure, and an electronic device including the stack structure. The stack structure includes: a Si substrate; an under layer formed on the Si substrate; and at least one... | 04/17/2012 |
| 8148789 | Non-volatile semiconductor storage device and method of manufacturing the same A non-volatile semiconductor storage device has a plurality of memory strings with a plurality of electrically rewritable memory cells connected in series. Each of the memory strings includes: a first columnar semiconductor layer extending in a direction perpendicul... | 04/03/2012 |
| 8125037 | Field effect transistor with channel region edge and center portions having different band structures for suppressed corner leakage Disclosed are embodiments of field effect transistors (FETs) having suppressed sub-threshold corner leakage, as a function of channel material band-edge modulation. Specifically, the FET channel region is formed with different materials at the edges as compared to t... | 02/28/2012 |
| 8115261 | Semiconductor device and method for manufacturing the same It is made possible to provide a semiconductor device and a method for manufacturing the semiconductor device that have the highest possible permittivity and can be produced at low production costs. A method for manufacturing a semiconductor device, includes: formin... | 02/14/2012 |
| 8106468 | Process for fabricating silicon-on-nothing MOSFETs A semiconductor device includes a gate stack; an air-gap under the gate stack; a semiconductor layer vertically between the gate stack and the air-gap; and a first dielectric layer underlying and adjoining the semiconductor layer. The first dielectric layer is expos... | 01/31/2012 |
| 8106467 | Semiconductor device having carrier mobility raised by generating strain in channel region A transistor is formed in the active region of a semiconductor substrate. A sidewall structure is disposed on the sidewalls of a gate electrode. A stress control film covers the semiconductor substrate. The sidewall structure includes a first portion extending along... | 01/31/2012 |
| 8093666 | Lanthanide yttrium aluminum oxide dielectric films Electronic apparatus and methods of forming the electronic apparatus include a lanthanide yttrium aluminum oxide dielectric film on a substrate for use in a variety of electronic systems. The lanthanide yttrium aluminum oxide film may be structured as one or more mo... | 01/10/2012 |
| 8089130 | Semiconductor device and process for reducing damaging breakdown in gate dielectrics The present invention, in one aspect, provides an integrated circuit that comprises a first region of transistors having gate structures with a low dopant concentration, and a second region of transistors having gate structures with a dopant concentration substantia... | 01/03/2012 |
| 8044471 | MOSFET having a channel mechanically stressed by an epitaxially grown, high K strain layer A transistor, such a MOSFET, having an epitaxially grown strain layer disposed over a channel region of a substrate for stressing the channel region to increase the carrier mobility in the channel, and method for making same. The strain layer is composed of a high d... | 10/25/2011 |
| 8035173 | CMOS transistors with differential oxygen content high-K dielectrics An NFET containing a first high-k dielectric portion and a PFET containing a second high-k gate dielectric portion are formed on a semiconductor substrate. A gate sidewall nitride is formed on the gate of the NFET, while the sidewalls of the PFET remain free of the ... | 10/11/2011 |
| 8035174 | Semiconductor device and method for fabricating the same A semiconductor device includes: a semiconductor substrate; a source region and a drain region formed in the upper part of the semiconductor substrate so as to be spaced; a channel region formed in a part of the semiconductor substrate between the source region and ... | 10/11/2011 |
| 8022489 | Air tunnel floating gate memory cell An air tunnel floating gate memory cell includes an air tunnel defined over a substrate. A first polysilicon layer (floating gate) is defined over the air tunnel. An oxide layer is disposed over the first polysilicon layer such that the oxide layer caps the first po... | 09/20/2011 |
| 7999334 | Hafnium tantalum titanium oxide films Embodiments of a dielectric layer containing a hafnium tantalum titanium oxide film structured as one or more monolayers include the dielectric layer disposed in an integrated circuit. Embodiments of methods of fabricating such a dielectric layer provide a dielectri... | 08/16/2011 |
| 7994590 | High dielectric constant insulators and associated fabrication methods High-dielectric-constant (k) materials and electrical devices implementing the high-k materials are provided herein. According to some embodiments, an electrical device includes a substrate and a crystalline-oxide-containing composition. The crystalline-oxide-contai... | 08/09/2011 |
| 7989902 | Scavenging metal stack for a high-k gate dielectric A stack of a high-k gate dielectric and a metal gate structure includes a lower metal layer, a scavenging metal layer, and an upper metal layer. The scavenging metal layer meets the following two criteria 1) a metal (M) for which the Gibbs free energy change of the ... | 08/02/2011 |
| 7977755 | Suspended nanochannel transistor structure and method for fabricating the same The present invention discloses a suspended nanochannel transistor structure and a method for fabricating the same. The transistor structure of the present invention comprises a substrate; a side gate formed on the substrate; a dielectric layer covering the substrat... | 07/12/2011 |
| 7964922 | Structure, design structure and method of manufacturing dual metal gate VT roll-up structure A structure, design structure and method of manufacturing is provided for a dual metal gate Vt roll-up structure, e.g., multi-work function metal gate. The multi-work function metal gate structure comprises a first type of metal with a first work function in a centr... | 06/21/2011 |
| 7919825 | Thin film transistors with poly(arylene ether) polymers as gate dielectrics and passivation layers The use of a poly(arylene ether) polymer as a passivation or gate dielectric layer in thin film transistors. This poly(arylene ether) polymer includes polymer repeat units of the following structure: —(O—Ar1—O—Ar2—O—)... | 04/05/2011 |
| 7893508 | Semiconductor device and manufacturing method thereof A semiconductor device capable of suppressing a threshold shift and a manufacturing method of the semiconductor device. On a high dielectric constant insulating film, a diffusion barrier film for preventing the diffusion of metal elements from the high dielectric co... | 02/22/2011 |
| 7893509 | Transistor and CVD apparatus used to deposit gate insulating film thereof In a transistor adapted to suppress characteristic degradation resulting from fluorine contained in a deposited film, the concentration of fluorine contained in a gate insulating film is reduced to 1.0×1020 atoms/cm3 or less. As a result, the ... | 02/22/2011 |
| 7880242 | Semiconductor device and method of fabricating the same A semiconductor device and a fabricating method thereof are provided. The semiconductor device includes a gate insulating layer with a high dielectric constant (k) and a polysilicon layer on a gate metal layer. The gate metal layer can include silicon atoms. Electro... | 02/01/2011 |
| 7880241 | Low-temperature electrically activated gate electrode and method of fabricating same A gate electrode structure is provided, which includes, from bottom to top, an optional, yet preferred metallic layer, a Ge rich-containing layer and a Si rich-containing layer. The sidewalls of the Ge rich-containing layer include a surface passivation layer. The i... | 02/01/2011 |
| 7863694 | Organic thin film transistors A thin film transistor having an improved gate dielectric layer is disclosed. The gate dielectric layer comprises a poly(hydroxyalkyl acrylate-co-acrylonitrile) based polymer. The resulting gate dielectric layer has a high dielectric constant and can be crosslinked.... | 01/04/2011 |
| 7821083 | Semiconductor device and method for manufacturing the same A semiconductor device includes a structure of a gate electrode/a high-k dielectric insulating film containing aluminum and having a dielectric constant greater than that of a silicon oxide film/the silicon oxide film/a silicon substrate, and is provided with a diff... | 10/26/2010 |
| 7812410 | Suspended-gate MOS transistor with non-volatile operation A microelectronic device, including at least one transistor including: on a substrate, a semiconductor zone with a channel zone covered with a gate dielectric zone, a mobile gate, suspended above the gate dielectric zone and separated from the gate dielectric zone b... | 10/12/2010 |
| 7812411 | High-k/metal gate MOSFET with reduced parasitic capacitance The present invention provides a high-k gate dielectric/metal gate MOSFET that has a reduced parasitic capacitance. The inventive structure includes at least one metal oxide semiconductor field effect transistor (MOSFET) 100 located on a surface of a semicond... | 10/12/2010 |
| 7804145 | Semiconductor device, capacitor, and field effect transistor It is made possible to provide a semiconductor device that has the effective work function of the connected metal optimized at the interface between a semiconductor and the metal. A semiconductor device includes: a semiconductor film; an oxide film formed on the sem... | 09/28/2010 |
| 7804144 | Low-temperature grown high quality ultra-thin CoTiOgate dielectrics A gate oxide and method of fabricating a gate oxide that produces a more reliable and thinner equivalent oxide thickness than conventional SiO2 gate oxides are provided. Gate oxides formed from alloys such as cobalt-titanium are thermodynamically stable s... | 09/28/2010 |
| 7791149 | Integrated circuit including a dielectric layer An integrated circuit including a dielectric layer and a method for manufacturing. One embodiment provides a substrate having a first side and a second side and at least one dielectric layer. The dielectric layer includes a zirconium oxide and at least one dopant se... | 09/07/2010 |
| 7768079 | Transistors with high-k dielectric spacer liner to mitigate lateral oxide encroachement Embodiments of the invention generally relate to transistors with high-k dielectric spacer liner to mitigate lateral oxide encroachment. In this regard a semiconductor device is introduced having a substrate, a high-k gate dielectric layer on the substrate, a metal ... | 08/03/2010 |
| 7683441 | Semiconductor device and method for fabricating the same Provided are a semiconductor device and a method for fabricating the same. The semiconductor device can include a transistor structure, including a gate dielectric on a substrate, a gate electrode on the gate dielectric, a spacer at sidewalls of the gate electrode, ... | 03/23/2010 |
| 7679147 | Semiconductor device fabricated by selective epitaxial growth method A semiconductor device in which selectivity in epitaxial growth is improved. There is provided a semiconductor device comprising a gate electrode formed over an Si substrate, which is a semiconductor substrate, with a gate insulating film therebetween and an insulat... | 03/16/2010 |
| 7675128 | Method for forming a gate insulating layer of a semiconductor device Embodiments relate to a method for forming a gate insulating layer, which may include forming a device isolation layer being divided into a device active region and a device isolation region, growing a first oxide layer at an entire surface of the semiconductor subs... | 03/09/2010 |
| 7671426 | Metal insulator semiconductor transistor using a gate insulator including a high dielectric constant film In a MIS transistor of which gate length is 10 nm or less, a gate insulator comprising a silicon oxide film formed on a silicon substrate and a high-k film formed on the silicon oxide film has a nitrided region including more nitrogen at the lateral side than at the... | 03/02/2010 |
| 7667281 | Method for hard mask CD trim Broadly speaking, methods and an apparatus are provided for removing an inorganic material from a substrate. More specifically, the methods provide for removing the inorganic material from the substrate through exposure to a high density plasma generated using an in... | 02/23/2010 |
| 7655993 | Method for manufacturing semiconductor integrated circuit device In a process of forming MISFETs that have gate insulating films that are mutually different in thickness on the same substrate, the formation of an undesirable natural oxide film at the interface between the semiconductor substrate and the gate insulating film is su... | 02/02/2010 |
| 7652341 | Semiconductor apparatus having a semicondutor element with a high dielectric constant film A semiconductor apparatus wherein a device formed on a semiconductor substrate comprises a gate insulating film including a high dielectric constant film formed on the substrate and an anti-reaction film formed on the high dielectric constant film, and a gate electr... | 01/26/2010 |
| 7642609 | Metal-oxide-semiconductor device with a doped titanate body A metal-oxide-semiconductor (MOS) device having a body of single-crystal strontium titanate or barium titanate (10) is provided in which the body comprises a doped semiconductor region (24) adjacent a dielectric region (26). The body may further... | 01/05/2010 |
| 7635900 | Insulating film and electronic device An electronic device including a semiconductor layer having silicon as a major component; and a dielectric film epitaxially grown directly on a major surface of the semiconductor layer, wherein the dielectric film consists of a dielectric material having a Ruddlesde... | 12/22/2009 |
