Class 257/408 - Including lightly doped drain portion adjacent channel (e.g., lightly doped drain, LDD device)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter wherein the device includes a drain portion
No. of patents: 1222
Last issue date: 04/09/2013

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Number	Title	Issue Date
8415752	Configuration and fabrication of semiconductor structure having asymmetric field-effect transistor with tailored pocket portion along source/drain zone An asymmetric insulated-gate field effect transistor (100U or 102U) provided along an upper surface of a semiconductor body contains first and second source/drain zones (240 and 242 or 280 and 282) laterally separated by a c...	04/09/2013
8390080	Transistor with dopant-bearing metal in source and drain A transistor and method of manufacturing thereof. A gate dielectric and gate are formed over a workpiece, and the source and drain regions of a transistor are recessed. The recesses are filled with a dopant-bearing metal, and a low-temperature anneal process is used...	03/05/2013
8384167	Semiconductor device with field effect transistor and manufacturing method thereof A semiconductor device includes: a semiconductor substrate in which a SiGe layer having a first width in a channel direction is embedded in a channel forming region; gate insulating film formed on the channel forming region; a gate electrode formed on the gate insul...	02/26/2013
8350342	Semiconductor device A semiconductor device includes a gate electrode provided on a semiconductor region with a gate insulating film being interposed therebetween, extension diffusion layers provided in regions on both sides of the gate electrode of the semiconductor region, a first-con...	01/08/2013
8299546	Semiconductor devices with vertical extensions for lateral scaling A method of forming a semiconductor device is provided, in which extension regions are formed atop the substrate in a vertical orientation. In one embodiment, the method includes providing a semiconductor substrate doped with a first conductivity dopant. Raised exte...	10/30/2012
8288831	Semiconductor device, method of manufacturing the same, and electronic device having the same A semiconductor device, which can improve the effect of a hydrogenation treatment in case of using a GOLD structure, and a method of manufacturing thereof is provided. A gate insulating film is formed on a semiconductor layer, and a source region, a drain region, an...	10/16/2012
8253208	Structure and fabrication of field-effect transistor having nitrided gate dielectric layer with tailored vertical nitrogen concentration profile A gate dielectric layer (500, 566, or 700) of an insulated-gate field-effect transistor (110, 114, or 122) contains nitrogen having a vertical concentration profile specially tailored to prevent boron in the overlying gate electrode (5...	08/28/2012
8222706	Semiconductor device A semiconductor device includes, a gate insulating film, a gate electrode, a source/drain region, and a Si mixed crystal layer in the source/drain region. The Si mixed crystal layer includes a first Si mixed crystal layer that includes impurities with a first concen...	07/17/2012
8217471	System and method for metal-oxide-semiconductor field effect transistor System and method for metal-oxide-semiconductor field effect transistor. In a specific embodiment, the invention provides a field effect transistor (FET), which includes a substrate material, the substrate material being characterized by a first conductivity type, t...	07/10/2012
8159036	Semiconductor device and method of manufacturing the same A LDD layer of the second conduction type locates in the surface of a semiconductor layer beneath a sidewall insulator film. A source layer of the second conduction type is formed in the surface of the semiconductor layer at a position adjacent to the LDD layer. A r...	04/17/2012
8138559	Recessed drift region for HVMOS breakdown improvement A high-voltage metal-oxide-semiconductor (HVMOS) device having increased breakdown voltage and methods for forming the same are provided. The HVMOS device includes a semiconductor substrate; a gate dielectric on a surface of the semiconductor substrate; a gate elect...	03/20/2012
8106466	MOS transistor and method for fabricating the same A method for fabricating a MOS transistor is disclosed. First, a semiconductor substrate having a gate thereon is provided. A spacer is then formed on the sidewall of the gate, and two recesses are formed adjacent to the spacer and within the semiconductor substrate...	01/31/2012
8097924	Ultra-shallow junction MOSFET having a high-k gate dielectric and in-situ doped selective epitaxy source/drain extensions and a method of making same A MOSFET includes a gate having a high-k gate dielectric on a substrate and a gate electrode on the gate dielectric. The gate dielectric protrudes beyond the gate electrode. A deep source and drain having shallow extensions are formed on either side of the gate. The...	01/17/2012
8093665	Semiconductor device and method for fabricating the same A semiconductor device is described, which includes a substrate, a gate structure, doped regions and lightly doped regions. The substrate has a stepped upper surface, which includes a first surface, a second surface and a third surface. The second surface is lower t...	01/10/2012
8053847	Method for fabricating metal-oxide semiconductor transistors A method for fabricating a metal-oxide semiconductor transistor is disclosed. First, a semiconductor substrate having a gate structure thereon is provided, and a spacer is formed around the gate structure. An ion implantation process is performed to implant a molecu...	11/08/2011
8022488	High-performance FETs with embedded stressors A high-performance semiconductor structure and a method of fabricating such a structure are provided. The semiconductor structure includes at least one gate stack, e.g., FET, located on an upper surface of a semiconductor substrate. The structure further includes a ...	09/20/2011
7989901	MOS devices with improved source/drain regions with SiGe A semiconductor structure and methods for forming the same are provided. The semiconductor structure includes a semiconductor substrate; a gate stack on the semiconductor substrate; a SiGe region in the semiconductor substrate and adjacent the gate stack, wherein th...	08/02/2011
7973372	Semiconductor structure in which source and drain extensions of field-effect transistor are defined with different dopants An insulated-gate field-effect transistor (100) provided along an upper surface of a semiconductor body contains a pair of source/drain zones (240 and 242) laterally separated by a channel zone (244). A gate electrode (262) overlie...	07/05/2011
7956425	Graded gate field Thin film transistors (TFT) and methods for making same. The TFTs generally comprise: (a) a semiconductor layer comprising source and drain terminals and a channel region therebetween; (b) a gate electrode comprising a gate and a gate dielectric layer between the ga...	06/07/2011
7952152	Semiconductor device and fabrication method thereof For forming a gate electrode, a conductive film with low resistance including Al or a material containing Al as its main component and a conductive film with low contact resistance for preventing diffusion of Al into a semiconductor layer are laminated, and the gate...	05/31/2011
7906820	Source offset MOSFET optimized for current voltage characteristic invariance with respect to changing temperatures A semiconductor device is disclosed. The semiconductor device includes a source offset type MOS transistor in which a source and a drain are formed on a semiconductor substrate by having a predetermined distance between the source and the drain, and a gate electrode...	03/15/2011
7888752	Structure and method to form source and drain regions over doped depletion regions A structure and method of reducing junction capacitance of a source/drain region in a transistor. A gate structure is formed over on a first conductive type substrate. We perform a doped depletion region implantation by implanting ions being the second conductive ty...	02/15/2011
7884427	Applying epitaxial silicon in disposable spacer flow A process for forming active transistors for a semiconductor memory device by the steps of: forming transistor gates having generally vertical sidewalls in a memory array section and in periphery section; implanting a first type of conductive dopants into exposed si...	02/08/2011
7868398	Semiconductor device A semiconductor device, which can improve the effect of a hydrogenation treatment in case of using a GOLD structure, and a method of manufacturing thereof is provided. A gate insulating film is formed on a semiconductor layer, and a source region, a drain region, an...	01/11/2011
7863693	Forming conductive stud for semiconductive devices Embodiments of the present invention provide a method of forming a conductive stud contacting a semiconductor device. The method includes forming a protective layer covering the semiconductor device; selectively etching an opening down through the protective layer r...	01/04/2011
7863692	Semiconductor device Embodiments relate to a semiconductor device in which a first oxide layer may be formed in a channel area under the gate electrode. An electric field loaded on the gate electrode may be reduced when electrons are implanted from the source to the drain, the accelerat...	01/04/2011
7804142	Semiconductor device and fabrication method thereof For forming a gate electrode, a conductive film with low resistance including Al or a material containing Al as its main component and a conductive film with low contact resistance for preventing diffusion of Al into a semiconductor layer are laminated, and the gate...	09/28/2010
7768078	Power semiconductor device having improved performance and method In one embodiment, a semiconductor device is formed in a body of semiconductor material. The semiconductor device includes a counter-doped drain region spaced apart from a channel region. ...	08/03/2010
7759745	Semiconductor memory device A drain (7) includes a lightly-doped shallow impurity region (7a) aligned with a control gate (5), and a heavily-doped deep impurity region (7b) aligned with a sidewall film (8) and doped with impurities at a concentr...	07/20/2010
7737510	Semiconductor device and method for fabricating the same A gate insulating film and a gate electrode are formed on an active region of a semiconductor substrate. A sidewall forming an L shape in cross section is formed on the sides of the gate electrode. Source/drain regions are formed in regions of the semiconductor subs...	06/15/2010
7728393	Semiconductor device A semiconductor device and method of manufacturing the semiconductor device are provided. The semiconductor device may include a semiconductor substrate, a gate insulation layer and a gate electrode, a first spacer, a second spacer, an epitaxial pattern, and/or sour...	06/01/2010
7683440	Semiconductor memory device A drain (7) includes a lightly-doped shallow impurity region (7a) aligned with a control gate (5), and a heavily-doped deep impurity region (7b) aligned with a sidewall film (8) and doped with impurities at a concentr...	03/23/2010
7655991	CMOS device with stressed sidewall spacers Sidewall spacers on the gate of a MOS device are formed from stressed material so as to provide strain in the channel region of the MOS device that enhances carrier mobility. In a particular embodiment, the MOS device is in a CMOS cell that includes a second MOS dev...	02/02/2010
7649234	Semiconductor devices An embodiment of a semiconductor device includes a gate electrode overlying a substrate and a lightly doped epitaxial layer formed on the substrate. A high energy implant region forms a well in a source side of the lightly doped epitaxial layer. A self-aligned halo ...	01/19/2010
7642607	MOS devices with reduced recess on substrate surface A MOS device having reduced recesses under a gate spacer and a method for forming the same are provided. The MOS device includes a gate structure overlying the substrate, a sidewall spacer on a sidewall of the gate structure, a recessed region having a recess depth ...	01/05/2010
7598575	Semiconductor die with reduced RF attenuation The attenuation of an RF signal on a metal trace in a semiconductor die is substantially reduced by utilizing a number of RF blocking structures that lie on the surface of the substrate directly below the metal trace that carries the RF signal. The RF blocking struc...	10/06/2009
7535065	Thin film transistor device utilizing transistors of differing material characteristics A first insulating film is formed. Then, a gate electrode of a low voltage drive thin film transistor and a mask film for covering a region constituting a channel of a high voltage drive thin film transistor are formed with a molybdenum film on the first insulating ...	05/19/2009
7525165	Light emitting device and manufacturing method thereof The light emitting device according to the present invention is characterized in that a gate electrode comprising a plurality of conductive films is formed, and concentrations of impurity regions in an active layer are adjusted with making use of selectivity of the ...	04/28/2009
7521768	Electric device comprising an LDMOS transistor The LDMOS transistor (99) of the invention is provided with a stepped shield structure (50) and/or with a first (25) and a second (26) drain extension region having a higher dopant concentration than the second drain extension region, and...	04/21/2009
7521767	MOS transistor in a semiconductor device Methods of forming a MOS transistor and a MOS transistor fabricated thereby are provided. The MOS transistor includes a semiconductor substrate of a first conductivity type, and an insulated gate pattern having sidewalls disposed on a predetermined region of the sem...	04/21/2009

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Class 257/408 - Including lightly doped drain portion adjacent channel (e.g., lightly doped drain, LDD device)