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Lawrence Welk, the bandleader who entertained millions of Americans over a generation of broadcasting his TV show, once received a patent: for a music-themed design of an ashtray.
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| Number | Title | Issue Date |
| 4225877 | Integrated circuit with C-Mos logic, and a bipolar driver with polysilicon resistors An integrated circuit includes MOS transistors and bipolar transistors, each of both polarity types, in a silicon wafer. High value polysilicon resistors are formed over an outer protective silicon dioxide layer of the silicon wafer, which resistors are r... | 09/30/1980 |
| 4131908 | Semiconductor protection device having a bipolar lateral transistor A safeguarded integrated circuit includes two supply electrodes, an output electrode and an input electrode. Between two of the electrodes there is provided a protection circuit having a lateral bipolar transistor, the emitter and collector zones of which... | 12/26/1978 |
| 4122481 | Semiconductor IC structure including isolated devices in a single substrate and method for fabricating same A semiconductor IC structure including a plurality of isolated devices in a single substrate of a first conductivity type comprising at least three wells of a second conductivity type formed in the substrate, two of the wells reaching different edges of a... | 10/24/1978 |
| 4120707 | Process of fabricating junction isolated IGFET and bipolar transistor integrated circuit by diffusion A high voltage junction isolated integrated circuit having complementary insulated gate field effect and PNP transistors wherein low impurity gradient and concentration N-type source and drain regions of the N-channel device and base region of the PNP are... | 10/17/1978 |
| 4116102 | Integrated circuit for an electronic musical instrument The present invention is an integrated circuit for an electronic musical instrument comprising: a plurality of frequency divider chains receiving a plurality of input signals for dividing the frequencies of the input signals one after another and correspo... | 09/26/1978 |
| 4112670 | Electronic timepiece An electronic timepiece wherein the timekeeping circuitry is formed of bipolar transistors and C-MOS transistors integrated on a single integrated circuit chip substrate is provided. The electronic timepiece includes timekeeping circuitry for producing ti... | 09/12/1978 |
| 4016596 | High performance integrated bipolar and complementary field effect transistors A method for fabricating both bipolar as well as complementary MOS field effect transistors, i.e., BI-CMOS transistors in the same semiconductor substrate. The preferred embodiment of the method provides bipolar and CMOS transistors having breakdown volta... | 04/05/1977 |
| 4016594 | Semiconductor device and method of manufacturing the device A semiconductor device having at least an insulated gate field effect transistor. According to the invention, the device comprises a first semiconductor region of a first conductivity type, an inset insulating pattern in a surface of said semiconductor re... | 04/05/1977 |
| 3999213 | Semiconductor device and method of manufacturing the device A semiconductor device particularly suitable for ICs with complementary field effect transistors and/or bipolar circuit elements comprises a semiconductor body having a first type substrate region on which is a second type epitaxial layer of which a part ... | 12/21/1976 |
| 3974516 | Method of manufacturing a semiconductor device having at least one insulated gate field effect transistor, and semiconductor device manufactured by using the method A method of manufacturing a semiconductor device having an insulated gate field effect transistor in which a second region of the second conductivity type is indiffused in a first region of the first conductivity type and source and drain zones of the fir... | 08/10/1976 |
| 3955269 | Fabricating high performance integrated bipolar and complementary field effect transistors A method for fabricating both bipolar as well as complementary MOS field effect transistors, i.e., BI-CMOS transistors in the same semiconductor substrate. The preferred embodiment of the method provides bipolar and CMOS transistors having breakdown volta... | 05/11/1976 |
