Did You Know...
...that one person who claimed to be the inventor of the television is Russian emigre Vladimir Zworykin? In 1929 David Sarnoff, founder of RCA, asked Zworykin what it would take to develop TV for commercial use. He said: a year and a half and $100,000. In reality, it took 20 years and $50 million! Before his death in 1982 at the age of 92, Zworykin said of his invention: "The technique is wonderful. It is beyond my expectations. But the programs! I would never let my children even come close to this thing."
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| Number | Title | Issue Date |
| 8178926 | Thin film field effect transistor and display A thin film field effect transistor including, on a substrate, at least a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode, wherein an electric resistance layer is provided in electric connection between the active l... | 05/15/2012 |
| 8174078 | Flat-panel display semiconductor process for efficient manufacturing An embodiment is a method and apparatus to fabricate a flat panel display. A poly-last structure is formed for a display panel using an amorphous silicon or amorphous silicon compatible process. The poly-last structure has a channel silicon precursor. The display pa... | 05/08/2012 |
| 8143674 | Semiconductor devices having resistors A semiconductor device having a resistor and a method of fabricating the same are provided. The semiconductor device includes a semiconductor substrate having a first circuit region and a second circuit region. A lower interlayer insulating layer is provided over th... | 03/27/2012 |
| 7994579 | Thin film field-effect transistor and display using the same The present invention provides a thin film field-effect transistor comprising a substrate having thereon at least a gate electrode, a gate insulating film, an active layer, a source electrode, and a drain electrode, wherein the active layer is an oxide semiconductor... | 08/09/2011 |
| 7919818 | Semiconductor device A semiconductor device includes a principal IGBT controllable in accordance with a gate voltage applied to a gate electrode thereof, a current detecting IGBT connected to the principal IGBT in parallel and a current detecting part including a detecting resistor capa... | 04/05/2011 |
| 7825476 | Method of fabricating polycrystalline silicon, TFT fabricated using the same, method of fabricating the TFT, and organic light emitting diode display device including the TFT A method of fabricating a polycrystalline silicon (poly-Si) layer includes providing a substrate, forming an amorphous silicon (a-Si) layer on the substrate, forming a thermal oxide layer to a thickness of about 10 to 50 Å on the a-Si layer, forming a metal cataly... | 11/02/2010 |
| 7795685 | Method of manufacturing a thin film transistor substrate and stripping composition A method of manufacturing a thin film transistor substrate includes forming a transistor thin layer pattern, forming a protecting layer, forming a photoresist film, forming a pixel electrode and a conductive layer that are separated from each other, stripping a phot... | 09/14/2010 |
| 7763942 | Pixel structure A pixel structure and a fabrication method thereof are provided, wherein a semiconductor pattern and a data line are defined simultaneously by performing a half-tone or grey-tone masking process. In addition, a self-alignment manner is further adopted to fabricate a... | 07/27/2010 |
| 7492012 | Light emitting device and method of manufacturing the same A light emitting device is provided which has a structure for preventing degradation of a light emitting element due to water and oxygen contained in an interlayer insulating film formed between a TFT and the light emitting element. A TFT is formed on a substrate, a... | 02/17/2009 |
| 7408225 | Apparatus and method for forming thin film using upstream and downstream exhaust mechanisms A thin-film formation apparatus possesses a reaction chamber to be evacuated, a placing portion on which a substrate is placed inside the reaction chamber, a gas-dispersion guide installed over the placing portion for supplying a gas onto a substrate surface, a gas-... | 08/05/2008 |
| 7402846 | Electrostatic discharge (ESD) protection structure and a circuit using the same An electrostatic discharge (ESD) protection structure is disclosed. The ESD protection structure includes an active device. The active device includes a plurality of drains. Each of the drains has a contact row and at least one body contact row. The at least one bod... | 07/22/2008 |
| 7394156 | Semiconductor integrated circuit device and method of producing the same A semiconductor integrated circuit device has a plurality of CMOS-type base cells arranged on a semiconductor substrate and m wiring layers, and gate array type logic cells are composed of the base cells and the wiring layers. Wiring within and between the logic cel... | 07/01/2008 |
| 7394134 | Semiconductor device with electrostatic discharge protection A semiconductor device is provided having a high performance resistance element. In an N-type well isolated by an insulating film, two higher concentration N-type regions are formed. An interlayer insulating film is also formed. In a plurality of openings in the int... | 07/01/2008 |
| 7365484 | Patterned substrate, electro-optical device, and method for manufacturing an electro-optical device A patterned substrate includes a base layer; a droplet holding space surrounded by a barrier that is formed over the base layer; and a pattern formed by discharging droplets containing a pattern formation material into the droplet holding space surrounded by the bar... | 04/29/2008 |
| 7365397 | Semiconductor device The semiconductor device comprises a resistance element 26 formed of polysilicon film formed on a silicon substrate 10, which includes a resistor part 26a having a resistance value set at a prescribed value, contact parts 26b | 04/29/2008 |
| 7361957 | Device for electrostatic discharge protection and method of manufacturing the same The present invention relates to a device for electrostatic discharge protection (ESD). According to an embodiment of the present invention, a device for electrostatic discharge protection includes a semiconductor substrate, a plurality of field oxide films formed i... | 04/22/2008 |
| 7361877 | Pinned-photodiode pixel with global shutter An image sensor includes a two-dimensional array of pixels having a photodetector for collecting charge in response to incident light; a storage region adjacent the photodetector that receives the charge from the photodetector; a sense node adjacent the storage regi... | 04/22/2008 |
| 7362297 | Display device A display device of the present invention has an incorporated charge pump control circuit and a clock frequency of a switching element can be varied according to a display mode to reduce the power consumption. On the display device, a variable frequency-dividing cir... | 04/22/2008 |
| 7358592 | Semiconductor device A semiconductor integrated circuit device having a metal thin-film resistance includes a lower insulation film formed over a semiconductor substrate via another lawyer, a metal interconnection pattern formed on the lower insulation film, an underlying insulation fil... | 04/15/2008 |
| 7355282 | Post passivation interconnection process and structures A system and method for forming post passivation metal structures is described. Metal interconnections and high quality electrical components, such as inductors, transformers, capacitors, or resistors are formed on a layer of passivation, or on a thick layer of poly... | 04/08/2008 |
| 7355204 | Organic device with environmental protection structure An organic electronic device includes a first member including: a substrate; a first conductive layer formed on the substrate; an organic active layer deposited on a portion of the first conductive layer; and a second conductive layer deposited on the organic active... | 04/08/2008 |
| 7355250 | Electrostatic discharge device with controllable holding current An electrostatic discharge (ESD) device with a parasitic silicon controlled rectifier (SCR) structure and controllable holding current is provided. A first distance is kept between a first N+ doped region and a first P+ doped region, and a second distance is kept be... | 04/08/2008 |
| 7341923 | Substrate, manufacturing method therefor, and semiconductor device A step of forming the first substrate which has a separation layer and a Ge layer on the separation layer, and a step of forming a bonded substrate stack by bonding the first substrate to the second substrate through an insulating layer, and a step of dividing the b... | 03/11/2008 |
| 7332385 | Method of manufacturing a semiconductor device that includes gettering regions A catalytic element is added to an amorphous semiconductor film and heat treatment is conducted therefor to produce a crystalline semiconductor film with good quality, a TFT (semiconductor device) with a satisfactory characteristic is realized using the crystalline ... | 02/19/2008 |
| 7327000 | Patterned thin film graphite devices and method for making same In a method of making graphite devices, a preselected crystal face of a crystal is annealed to create a thin-film graphitic layer disposed against selected face. A preselected pattern is generated on the thin-film graphitic layer. A functional structure includes a c... | 02/05/2008 |
| 7326999 | Chip resistor and method for manufacturing same A chip resistor (R1) includes a resistor element (1) having a first surface (1a) and a second surface (1b) opposite to the first surface. Two main electrodes (21), spaced from each other, are provided on the first sur... | 02/05/2008 |
| 7323751 | Thin film resistor integration in a dual damascene structure A thin film resistor and at least one metal interconnect are formed in an integrated circuit. A first dielectric layer is formed over a metal interconnect layer. A thin film resistor is formed on the first dielectric layer and a second dielectric layer formed over t... | 01/29/2008 |
| 7323762 | Semiconductor package substrate with embedded resistors and method for fabricating the same A semiconductor package substrate with embedded resistors and a method for fabricating the same are proposed. Firstly, an inner circuit board having a first circuit layer thereon is provided, and a plurality of resistor electrodes are formed in the fist circuit laye... | 01/29/2008 |
| 7318866 | Systems and methods for inducing crystallization of thin films using multiple optical paths The present invention is directed to systems and methods for irradiating regions of a thin film sample(s) with laser beam pulses having different energy beam characteristics that are generated and delivered via different optical paths. Exemplary methods include the ... | 01/15/2008 |
| 7316973 | Method for fabricating semiconductor device The present invention relates to a method for fabricating a semiconductor device capable of preventing bridge formation caused by damages to a capacitor oxide structure including a phosphosilicate glass (PSG) layer and a tetraethylorthosilicate (TEOS) layer during a... | 01/08/2008 |
| 7312470 | Thin film transistor array panel and method for fabricating the same The present invention relates to a TFT array panel and a fabricating method thereof. A gate insulating layer and a passivation layer are formed by printing organic insulating material in order to simplify the fabricating process. The inventive TFT panel includes an ... | 12/25/2007 |
| 7312515 | Semiconductor apparatus including a thin-metal-film resistor element and a method of manufacturing the same A semiconductor apparatus includes a wiring pattern, an insulating film, and a thin-metal-film resistor element. The insulating film is formed on the wiring pattern having connection holes vertically penetrating there-through to expose part of the wiring pattern at ... | 12/25/2007 |
| 7298010 | Radiation-hardened transistor and integrated circuit A composite transistor is disclosed for use in radiation hardening a CMOS IC formed on an SOI or bulk semiconductor substrate. The composite transistor has a circuit transistor and a blocking transistor connected in series with a common gate connection. A body termi... | 11/20/2007 |
| 7294875 | Nanoscale programmable structures and methods of forming and using same A programmable structure and device and methods of forming and using the structure and device are disclosed. The structure includes a soluble electrode, an ion conductor, and an inert electrode. Upon application of a sufficient voltage, a conductive region forms wit... | 11/13/2007 |
| 7285764 | Solid state imaging device and method of driving the same An imaging device comprising: a photoelectric conversion element generating photo-generated charges; an accumulation well accumulating the charges; a modulation well storing the charges; a modulation transistor having a channel threshold voltage controlled by the st... | 10/23/2007 |
| 7282769 | Thin film transistor device and method of making the same The electronic device comprises a thin-film transistor (10) and can be obtained from two substrates (1, 11). In order to preclude delamination at a non-adhesive interface between a metal pattern (24, 29) and an organic layer (4), the meta... | 10/16/2007 |
| 7276767 | Thin film resistor device and a method of manufacture therefor The present invention provides a thin film resistor and method of manufacture therefor. The thin film resistor comprises a resistive layer located on a first dielectric layer, first and second contact pads located on the resistive layer, and a second dielectric laye... | 10/02/2007 |
| 7274047 | Silicon controlled rectifier electrostatic discharge protection device for power supply lines with powerdown mode of operation An electrostatic discharge (ESD) protection circuit in a semiconductor integrated circuit (IC) having protected circuitry. The ESD protection circuit includes a silicon controlled rectifier (SCR) having at least one first type high dopant region coupled to a first r... | 09/25/2007 |
| 7257020 | Thin film magnetic memory device having redundant configuration Normal memory cells are arranged in rows and columns, and dummy memory cells are arranged to form dummy memory cell rows by sharing memory celf columns with the normal memory cells. When there is at least one defect in the normal memory cells and/or the dummy memory... | 08/14/2007 |
| 7250660 | ESD protection that supports LVDS and OCT Circuits are described that provide electrostatic discharge protection for I/O circuits that support the low voltage differential signaling (LVDS) and on-chip termination (OCT) standards. At least one additional transistor is connected across an I/O transistor. In t... | 07/31/2007 |
