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| Number | Title | Issue Date |
| 8188542 | Field effect transistors including variable width channels and methods of forming the same A field effect transistor includes a first substrate region having a channel region and a second substrate region where a heavily doped region is formed. The channel region includes a first portion having a first width and a second portion having a second width larg... | 05/29/2012 |
| 8134206 | Semiconductor device This invention provides a semiconductor device, which is used to manufacture two lateral high-voltage devices on the same substrate, where the voltages between maximum voltage terminals and minimum voltage terminals of the two devices have not too much difference. B... | 03/13/2012 |
| 8089124 | Lateral DMOS device and method for fabricating the same An LDMOS device and a method for fabricating the same that may include a first conductivity-type semiconductor substrate having an active area and a field area; a second conductivity-type deep well formed on the first conductivity-type semiconductor substrate; a sec... | 01/03/2012 |
| 7999317 | Semiconductor device and manufacturing method thereof A p-type body region and an n-type buffer region are formed on an n− drift region. An n++ emitter region and a p++ contact region are formed on the p-type body region in contact with each other. A p++ collector region is... | 08/16/2011 |
| 7948033 | Semiconductor device having trench edge termination structure In one embodiment, a device is formed in a region of semiconductor material. The device includes active cell trenches and termination trenches each having doped sidewall surfaces that compensate the region of semiconductor material during reverse bias conditions to ... | 05/24/2011 |
| 7932559 | Semiconductor device A super-junction semiconductor substrate is configured in such a manner that an n-type semiconductor layer of a parallel pn structure is opposed to a boundary region between an active area and a peripheral breakdown-resistant structure area. A high-concentration reg... | 04/26/2011 |
| 7928508 | Disconnected DPW structures for improving on-state performance of MOS devices A semiconductor structure includes a semiconductor substrate; a first high-voltage well (HVW) region of a first conductivity type overlying the semiconductor substrate; a second HVW region of a second conductivity type opposite the first conductivity type overlying ... | 04/19/2011 |
| 7875929 | Semiconductor device and method for manufacturing the same A semiconductor device including a well region formed in a silicon substrate; a trench exposing a predetermined portion of the uppermost surface of the semiconductor substrate; a body layer formed in the semiconductor substrate at the trench; a device isolation laye... | 01/25/2011 |
| 7868384 | High-voltage semiconductor device and method of fabricating the same A high-voltage semiconductor device includes a semiconductor layer having a plurality of pillars of a first conductivity type defined by a plurality of trenches which extend from a top surface of the semiconductor layer toward a bottom surface thereof. A charge comp... | 01/11/2011 |
| 7671410 | Design and fabrication of rugged FRED, power MOSFET or IGBT An improved Fast Recovery Diode comprises a main PN junction defining a central conduction region for conducting high current in a forward direction and a peripheral field spreading region surrounding the central conduction region for blocking high voltage in the re... | 03/02/2010 |
| 7649224 | DMOS with high source-drain breakdown voltage, small on- resistance, and high current driving capacity This invention is directed to offer a MOS transistor that has a high source-drain breakdown BVds, a low on resistance and a high electric current driving capacity. On resistance is lowered by forming an N well layer for lowering on resistance in the drift region. Th... | 01/19/2010 |
| 7528444 | Efficient transistor structure An integrated circuit comprises a first drain region having a generally rectangular shape. First, second, third and fourth source regions have a generally rectangular shape and that are arranged adjacent to sides of the first drain region. A gate region is arranged ... | 05/05/2009 |
| 7473966 | Oxide-bypassed lateral high voltage structures and methods A lateral high-voltage active device structure, in which field-shaping trench electrodes are capacitively coupled to the voltage-withstand region near the source end thereof. ... | 01/06/2009 |
| 7432145 | Power semiconductor device with a base region and method of manufacturing same A low on-state resistance power semiconductor device has a shape and an arrangement that increase the channel density and the breakdown voltage The power semiconductor device comprises a plurality of individual cells formed on a semiconductor substrate (62). ... | 10/07/2008 |
| 7427795 | Drain-extended MOS transistors and methods for making the same Drain-extended MOS transistors (T1, T2) and semiconductor devices (102) are described, as well as fabrication methods (202) therefor, in which a p-buried layer (130) is formed prior to formation of epitaxial silicon (106) ov... | 09/23/2008 |
| 7417284 | Semiconductor device and method of manufacturing the same A semiconductor device having SJ structure has a peripheral region having a higher withstand voltage than the withstand voltage of the cell region. A semiconductor upper layer including second conductivity-type impurities and a semiconductor lower layer including fi... | 08/26/2008 |
| 7417282 | Vertical double-diffused metal oxide semiconductor (VDMOS) device incorporating reverse diode The present invention disclosed herein is a Vertical Double-Diffused Metal Oxide Semiconductor (VDMOS) device incorporating a reverse diode. This device includes a plurality of source regions isolated from a drain region. A source region in close proximity to the dr... | 08/26/2008 |
| 7411249 | Lateral high-voltage transistor with vertically-extended voltage-equalized drift region A lateral high-voltage device in which conductive trench plates are inserted across the voltage-withstand region, so that, in the on state, the current density vectors have less convergence. This can help reduce on-resistance. ... | 08/12/2008 |
| 7408234 | Semiconductor device and method for manufacturing the same An object of the present invention is to provide a semiconductor device that is able to realize a low on-resistance maintaining a high drain-to-source breakdown voltage, and a method for manufacturing thereof, the present invention including: a supporting substrate;... | 08/05/2008 |
| 7394156 | Semiconductor integrated circuit device and method of producing the same A semiconductor integrated circuit device has a plurality of CMOS-type base cells arranged on a semiconductor substrate and m wiring layers, and gate array type logic cells are composed of the base cells and the wiring layers. Wiring within and between the logic cel... | 07/01/2008 |
| 7385246 | Depletable cathode low charge storage diode An integrated circuit device comprising a diode and a method of making an integrated circuit device comprising a diode are provided. The diode can comprise an island of a first conductivity type, a first region of a second conductivity type formed in the island, and... | 06/10/2008 |
| 7385273 | Power semiconductor device A power semiconductor device that includes a plurality of gate structure each having a gate insulation of a first thickness, and a termination region, the termination including a field insulation body surrounding the active region and having a recess that includes a... | 06/10/2008 |
| 7378317 | Superjunction power MOSFET Methods and apparatus are provided for TMOS devices, comprising multiple N-type source regions, electrically in parallel, located in multiple P-body regions separated by N-type JFET regions at a first surface. The gate overlies the body channel regions and the JFET ... | 05/27/2008 |
| 7372104 | High voltage CMOS devices A transistor suitable for high-voltage applications is provided. The transistor is formed on a substrate having a deep well of a first conductivity type. A first well of the first conductivity type and a second well of a second conductivity type are formed such that... | 05/13/2008 |
| 7372111 | Semiconductor device with improved breakdown voltage and high current capacity The superjunction semiconductor device includes a drain drift section, which includes a first alternating conductivity type layer formed of first n-type regions and first p-type regions arranged alternately. The device also includes a peripheral section around the d... | 05/13/2008 |
| 7371564 | Apparatus for automatically analyzing genetic and protein materials using photodiodes An apparatus for automatically analyzing genetic and protein materials using photodiodes. The apparatus comprises a computer for controlling the entire operation of the apparatus and analyzing a voltage level from a characteristic detector to analyze states of the g... | 05/13/2008 |
| 7365402 | LDMOS transistor An LDMOS semiconductor transistor structure comprises a substrate having an epitaxial layer of a first conductivity type, a source region extending from a surface of the epitaxial layer of a second conductivity type, a lightly doped drain region within the epitaxial... | 04/29/2008 |
| 7365392 | Semiconductor device with integrated trench lateral power MOSFETs and planar devices Gate electrodes of a TLPM and gate electrodes of planar devices are formed by patterning a same polysilicon layer. Drain electrode(s) and source electrode(s) of the TLPM and drain electrodes and source electrodes of the planar devices are formed by patterning a same... | 04/29/2008 |
| 7361952 | Semiconductor apparatus and method of manufacturing the same A semiconductor apparatus includes a semiconductor substrate of a first conductivity type, a base region of a second conductivity type formed on a principal surface of the semiconductor substrate, a trench formed in a periphery of the base region, and an endless sou... | 04/22/2008 |
| 7358568 | Low resistance semiconductor process and structures A process for forming a semiconductor device comprises the steps of providing a semiconductor substrate assembly comprising a semiconductor wafer having an active area formed therein, a plurality of transistor gates each having a TEOS cap thereon and a pair of nitri... | 04/15/2008 |
| 7358566 | Semiconductor device A first main electrode is provided on one surface thereof. On the other surface thereof, a second semiconductor layer of the first conduction type and a third semiconductor layer of the second conduction type are arranged alternately along the surface. A fourth semi... | 04/15/2008 |
| 7355224 | High voltage LDMOS A semiconductor device, such as a LDMOS device, comprising: a semiconductor substrate; a drain region in the semiconductor substrate; a source region in the semiconductor substrate laterally spaced from the drain region; and a drift region in the semiconductor subst... | 04/08/2008 |
| 7345340 | Semiconductor integrated circuit and a semiconductor device A semiconductor integrated circuit that has a quick response to changes in source/drain electrode voltage having an LDMOS transistor. The transistor has a second conduction type first well region formed in a first conduction type semiconductor substrate; a first con... | 03/18/2008 |
| 7345341 | High voltage semiconductor devices and methods for fabricating the same High voltage semiconductor devices and methods for fabricating the same are provided. An exemplary embodiment of a semiconductor device capable of high-voltage operation, comprising a substrate comprising a first well formed therein. A gate stack is formed overlying... | 03/18/2008 |
| 7329940 | Semiconductor structure and method of manufacture A structure comprises a single wafer with a first subcollector formed in a first region having a first thickness and a second subcollector formed in a second region having a second thickness, different from the first thickness. A method is also contemplated which in... | 02/12/2008 |
| 7326996 | Semiconductor device and manufacturing process thereof The semiconductor device according to one of the aspects of the present invention includes a semiconductor substrate of a first conductivity type, having upper and lower surfaces. A collector region of a second conductivity type is formed on the lower surface of the... | 02/05/2008 |
| 7326995 | Trench MIS device having implanted drain-drift region and thick bottom oxide A trench MIS device is formed in a P-epitaxial layer that overlies an N+ substrate. In one embodiment, the device includes a thick oxide layer at the bottom of the trench and an N-type drain-drift region that extends from the bottom of the trench to the substrate. T... | 02/05/2008 |
| 7323745 | Top drain MOSFET A power MOSFET is disclosed in which the source and drain regions are reversed from their usual positions and the drain is on the top of the chip (the surface containing the junction pattern diffusions) and the source is on the bottom of the chip. A plurality of spa... | 01/29/2008 |
| 7323753 | MOS transistor circuit and voltage-boosting booster circuit To an output of an NMOS having one end connected to a power source, a capacitor and a PMOS are connected. A capacitor is connected to the output of the PMOS. The NMOS and the PMOS are turned on alternately. A pulse is applied to other end of the capacitor which is c... | 01/29/2008 |
| 7323747 | Lateral semiconductor device In a high voltage P-channel MOS transistor formed on a silicon-on-insulator (SOI) substrate, a P+-type source region (8), an N-type body region (4) and an N+-body contact diffusion region (10) are surrounded by a P+ | 01/29/2008 |
