Class 257/341 - Plural sections connected in parallel (e.g., power MOSFET)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter wherein the graded channel doping short channel
No. of patents: 1209
Last issue date: 05/29/2012

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Number	Title	Issue Date
8188541	Vertical MOSFET with through-body via for gate In an embodiment, set forth by way of example and not limitation, a MOSFET power chip includes a first vertical MOSFET and a second vertical MOSFET. The first vertical MOSFET includes a semiconductor body having a first surface defining a source and a second surface...	05/29/2012
8183631	Semiconductor device A semiconductor device has a semiconductor substrate having an upper main surface and a lower main surface. The semiconductor substrate includes a drain layer, a main base region, an underpad base region and a source region. The semiconductor device includes a first...	05/22/2012
8174070	Dual channel trench LDMOS transistors and BCD process with deep trench isolation A dual channel trench LDMOS transistor includes a substrate of a first conductivity type; a semiconductor layer of a second conductivity type formed on the substrate; a first trench formed in the semiconductor layer where a trench gate is formed in an upper portion ...	05/08/2012
8174069	Power semiconductor device and a method of forming a power semiconductor device A power semiconductor device has a top surface and an opposed bottom surface below a part of which is a thick portion of semiconductor substrate. At least a portion of a drift region of the device has either no or only a thin portion of semiconductor substrate posit...	05/08/2012
8169023	Power semiconductor device An impurity concentration profile in a vertical direction of a p type base contact layer of a power semiconductor device has a two-stage configuration. In other word, the impurity concentration profile is highest at an upper face of the p type base contact layer, ha...	05/01/2012
8134205	Layout structure of power MOS transistor The present invention discloses a layout structure of a transistor unit of a power MOS transistor, wherein the layout structure comprises a drain area, a plurality of body areas, a plurality of source areas and a gate area. The plurality of body areas surround the d...	03/13/2012
8125029	Lateral power diode with self-biasing electrode A semiconductor diode includes a drift region of a first conductivity type and an anode region of a second conductivity type in the drift region such that the anode region and the drift region form a pn junction therebetween. A first highly doped silicon region of t...	02/28/2012
8125030	High voltage SCRMOS in BiCMOS process technologies An integrated circuit containing an SCRMOS transistor. The SCRMOS transistor has one drain structure with a centralized drain diffused region and distributed SCR terminals, and a second drain structure with distributed drain diffused regions and SCR terminals. An MO...	02/28/2012
8120108	High voltage SCRMOS in BiCMOS process technologies An integrated circuit having an SCRMOS transistor with a RESURF region around the drain region and SCR terminal. The RESURF region is the same conductivity type as the drift region and is more heavily doped than the drift region. An SCRMOS transistor with a RESURF r...	02/21/2012
8115253	Ultra high voltage MOS transistor device An ultra high voltage MOS transistor device includes a substrate having a first conductive type, a first well having a second conductive type and a second well having the first conductive type formed in the substrate, a drain region having the second conductive type...	02/14/2012
8106454	Power semiconductor device and method for manufacturing same A vertical power semiconductor device includes a first semiconductor layer of a first conductivity type formed in both a cell section and a termination section, the termination section surrounding the cell section, a second semiconductor layer of a second conductivi...	01/31/2012
8106453	Semiconductor device having super junction structure A semiconductor device having a super junction structure includes: multiple first columns extending in a current flowing direction; and multiple second columns extending in the current flowing direction. The first and second columns are alternately arranged in an al...	01/31/2012
8101997	Semiconductor device with a charge carrier compensation structure in a semiconductor body and method for its production A semiconductor device with a charge carrier compensation structure in a semiconductor body and to a method for its production. The semiconductor body includes drift zones of a first conduction type and charge compensation zones of a second conduction type complemen...	01/24/2012
8097919	Mesa termination structures for power semiconductor devices including mesa step buffers An electronic device includes a drift layer having a first conductivity type, a buffer layer having a second conductivity type, opposite the first conductivity type, on the drift layer and forming a P−N junction with the drift layer, and a junction termination ext...	01/17/2012
8093655	Integrated circuit including a trench transistor having two control electrodes An integrated circuit including a field effect controllable trench transistor having two-control electrodes is disclosed. One embodiment provides a trench having a first control electrode and a second control electrode. A first electrical line is provided in an edge...	01/10/2012
8084816	Semiconductor module A semiconductor module is disclosed. One embodiment provides a first semiconductor chip having a first contact pad on a first main surface and a second contact pad on a second main surface, a first electrically conductive layer applied to the first main surface, a s...	12/27/2011
8084815	Superjunction semiconductor device A superjunction semiconductor device includes an edge p pillar, an active region, and a termination region. The edge p pillar has a rectangular ring shape with rounded corners surrounding the active region. The active region includes an active n region and active p ...	12/27/2011
8080847	Low on resistance CMOS “wave” transistor for integrated circuit applications In one embodiment of the present invention an array of power transistors on a semiconductor chip has repeating patterns of two “wave” gates which have alternating longer and shorter horizontal sections which are offset mirror images of each other together with a...	12/20/2011
8080846	Semiconductor device having improved breakdown voltage and method of manufacturing the same A semiconductor device is disclosed which improves the breakdown voltage of a planar-type junction edge terminating structure. The device includes an n-type semiconductor substrate layer common to an active section and an edge terminating section. An n-type drift re...	12/20/2011
8058688	Semiconductor device A semiconductor device includes: a semiconductor substrate; a first semiconductor layer of a first conductivity type provided on a major surface of the semiconductor substrate and having lower doping concentration than the semiconductor substrate; a plurality of fir...	11/15/2011
8049276	Reduced process sensitivity of electrode-semiconductor rectifiers Disclosed are semiconductor devices and methods of making semiconductor devices. An exemplary embodiment comprises a semiconductor layer of a first conductivity type having a first surface, a second surface, and a graded net doping concentration of the first conduct...	11/01/2011
8044463	Method of manufacturing a trench transistor having a heavy body region A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped h...	10/25/2011
8044462	Process for manufacturing a power device on a semiconductor substrate and corresponding device An electronic device includes a semiconductor substrate of a first conductivity type and a drain layer adjacent the semiconductor substrate and having a plurality of drains. The drain layer includes a first semiconductor layer of the first conductivity type adjacent...	10/25/2011
RE42864	Rugged and fast power MOSFET and IGBT A power semiconductor device includes a substrate having an upper surface and a lower surface. A source region of first conductivity is formed within a well region of second conductivity. The source region is provided proximate to the upper surface of the substrate....	10/25/2011
8039898	Process for manufacturing a charge-balance power diode and an edge-termination structure for a charge-balance semiconductor power device An embodiment of a process for manufacturing a semiconductor power device envisages the steps of: providing a body made of semiconductor material having a first top surface; forming an active region with a first type of conductivity in the proximity of the first top...	10/18/2011
8030706	Power semiconductor device A semiconductor device according to an embodiment of the present invention includes a device part and a terminal part. The device includes a first semiconductor layer, and second and third semiconductor layers formed on the first semiconductor layer, and alternately...	10/04/2011
8026550	Integrated circuits and interconnect structure for integrated circuits An integrated circuit includes N plane-like metal layers. A first plane-like metal layer includes M contact portions that communicate with respective ones of the N plane-like metal layers, where M is an integer greater than one, wherein the first plane-like metal la...	09/27/2011
8008720	Transistor structure having a conductive layer formed contiguous in a single deposition A semiconductor device is formed having a pedestal. The pedestal includes at least two dielectric layers. The pedestal has a sidewall and a major surface. A conductive layer is formed overlying the pedestal. A vertical portion of the conductive layer adjacent to the...	08/30/2011
8004040	Semiconductor device and its manufacturing method Provided are a semiconductor device which can be manufactured at low cost and has a low on-resistance and a high withstand voltage, and its manufacturing method. The semiconductor device comprises an N-type well area formed on a P-type semiconductor substrate, a P-t...	08/23/2011
7999316	Semiconductor device and method for manufacturing the same Disclosed is a vertically arranged semiconductor device. The semiconductor device can include a semiconductor substrate comprising a first conductive type buried layer, a first conductive type drift region formed on the first conductive type buried layer, and a seco...	08/16/2011
7986005	Short circuit limiting in power semiconductor devices A power semiconductor device includes a semiconductor body. The semiconductor body includes a body region of a first conductivity type for forming therein a conductive channel of a second conductivity type; a gate electrode arranged next to the body region; and a fl...	07/26/2011
7982265	Trenched shield gate power semiconductor devices and methods of manufacture A semiconductor power device includes a drift region of a first conductivity type, a well region extending above the drift region and having a second conductivity type opposite the first conductivity type, an active trench extending through the well region and into ...	07/19/2011
7977745	Tungsten plug drain extension A power metal-oxide-semiconductor field effect transistor (MOSFET) cell includes a semiconductor substrate. A first electrode is disposed on the semiconductor substrate. A voltage sustaining layer is formed on the semiconductor substrate. A highly doped active zone ...	07/12/2011
7973363	IGBT semiconductor device To provide a semiconductor device in which dielectric breakdown strength in a peripheral region is increased without increasing on-resistance. An IGBT comprises a body region, guard ring, and collector layer. The body region is formed within an active region in a su...	07/05/2011
7973362	Semiconductor component and method for producing it A semiconductor component includes a semiconductor body having an edge with an edge zone of a first conductivity type. Charge compensation regions of a second conductivity type are embedded into the edge zone, with the charge compensation regions extending from a to...	07/05/2011
7968942	Semiconductor apparatus The present invention provides a semiconductor apparatus having high reliability with respect to a withstand voltage, leakage characteristics, etc. by disposing a structure of preventing stress occurring by metal wiring from directly acting on a trench relating to t...	06/28/2011
7964915	Semiconductor device having a DMOS structure The invention provides a high voltage MOS transistor having a high source/drain breakdown voltage of about 300V and a low on-resistance. An N-type body layer is formed extending from a source layer side to under a gate electrode. A P-type second drift layer is forme...	06/21/2011
7960787	Configuration of trenched semiconductor power device to reduce masked process A semiconductor power device formed on a semiconductor substrate of a first conductivity type wherein the semiconductor power device includes trench gates surrounded by body regions of a second conductivity type encompassing source regions of the first conductivity ...	06/14/2011
7960786	Breakdown voltages of ultra-high voltage devices by forming tunnels A semiconductor structure includes a semiconductor substrate of a first conductivity type; a pre-high-voltage well (pre-HVW) in the semiconductor substrate, wherein the pre-HVW is of a second conductivity type opposite the first conductivity type; a high-voltage wel...	06/14/2011
7952144	Integration of a sense FET into a discrete power MOSFET A semiconductor device includes a main field effect transistor (FET) and one or more sense FETs, and a common gate pad. The main FET and the one or more sense FETs are formed in a common substrate. The main FET and each of the sense FETs include a source terminal, a...	05/31/2011

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Class 257/341 - Plural sections connected in parallel (e.g., power MOSFET)