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| Number | Title | Issue Date |
| 8188540 | High breakdown voltage double-gate semiconductor device A double-gate semiconductor device includes a MOS gate and a junction gate, in which the bias of the junction gate is a function of the gate voltage of the MOS gate. The breakdown voltage of the double-gate semiconductor device is the sum of the breakdown voltages o... | 05/29/2012 |
| 8188539 | Field-effect semiconductor device and method of forming the same A semiconductor device comprises a semiconductor layer, a body region of a first conductivity type formed in the semiconductor layer and extending from a first surface of the semiconductor layer, a first region of a second conductivity type formed in the body region... | 05/29/2012 |
| 8154078 | Semiconductor structure and fabrication method thereof A semiconductor structure is provided. A second conductivity type well region is disposed on a first conductivity type substrate. A gate structure comprising a first sidewall and second sidewall is provided. The first sidewall is disposed on the second conductivity ... | 04/10/2012 |
| 8129784 | Semiconductor device The invention improves the performance of a semiconductor device. A metal silicide film is formed by a silicide process on a gate electrode and an n+-type source region of an LDMOSFET, and no such metal silicide film is formed on an n−-type o... | 03/06/2012 |
| 8129783 | Lateral power MOSFET with high breakdown voltage and low on-resistance A semiconductor device with high breakdown voltage and low on-resistance is provided. An embodiment comprises a substrate having a buried layer in a portion of the top region of the substrate in order to extend the drift region. A layer is formed over the buried lay... | 03/06/2012 |
| 8129782 | High-voltage transistor and method for its manufacture A high-voltage transistor is provided with a well of a first conductivity type, which is arranged in a substrate (10) of a second conductivity type, with a source (14), a drain (12), and a gate electrode (18) above a channel region (KN, K... | 03/06/2012 |
| 8125028 | Semiconductor devices for high power application Semiconductor devices for high voltage application are presented. A high power semiconductor device includes a first type doped semiconductor substrate and a second type doped epitaxial layer deposited thereon. A first type doped body region is disposed in the secon... | 02/28/2012 |
| 8106451 | Multiple lateral RESURF LDMOST A lateral DMOS transistor that includes two RESURF regions of one conductivity and two RESURF regions of another conductivity disposed between the base region and the drain region thereof. ... | 01/31/2012 |
| 8017996 | Semiconductor device, and energy transmission device using the same An energy transmission device includes: a semiconductor device formed on a first semiconductor substrate; a semiconductor integrated circuit including a reverse current preventing diode and a control circuit; a DC voltage source; and a transformer. The reverse curre... | 09/13/2011 |
| 8004039 | Field effect transistor with trench-isolated drain A MOS transistor includes a body region of a first conductivity type, a conductive gate and a first dielectric layer, a source region of a second conductivity type formed in the body region, a heavily doped source contact diffusion region formed in the source region... | 08/23/2011 |
| 7989889 | Integrated lateral high-voltage metal oxide semiconductor field effect transistor The present invention relates to integration of a lateral high-voltage metal oxide semiconductor field effect transistor (LHV-MOSFET) with other circuitry on a semiconductor wafer, which may be fabricated using low-voltage foundry technology, such as a low-voltage c... | 08/02/2011 |
| 7977744 | Field effect transistor with trench filled with insulating material and strips of semi-insulating material along trench sidewalls A MOSFET comprises a first semiconductor region having a first surface, a first insulation-filled trench region extending from the first surface into the first semiconductor region, and strips of semi-insulating material along the sidewalls of the first insulation-f... | 07/12/2011 |
| 7973361 | High breakdown voltage semiconductor device and fabrication method of the same A high breakdown voltage semiconductor device is formed using an SOI substrate comprising a support substrate, an insulating film, and an active layer. The high breakdown voltage semiconductor device comprises an N-type well region and a P-type drain offset region f... | 07/05/2011 |
| 7915676 | Integrated circuit The invention relates to an integrated circuit having a semiconductor component (10) comprising a first p-type region (12) and a first n-type region (11) adjoining the first p-type region (12), which together form a first pn junction havi... | 03/29/2011 |
| 7915677 | Lateral power MOSFET with high breakdown voltage and low on-resistance A semiconductor device with high breakdown voltage and low on-resistance is provided. An embodiment comprises a substrate having a buried layer in a portion of the top region of the substrate in order to extend the drift region. A layer is formed over the buried lay... | 03/29/2011 |
| 7902601 | Semiconductor device having deep trench charge compensation regions and method In one embodiment, a semiconductor device is formed in a body of semiconductor material. The semiconductor device includes a charge compensating trench formed in proximity to active portions of the device. The charge compensating trench includes a trench filled with... | 03/08/2011 |
| 7863682 | SIC semiconductor having junction barrier Schottky diode A semiconductor device having a junction barrier Schottky diode includes: a SiC substrate; a drift layer on the substrate; an insulation film on the drift layer having an opening in a cell region; a Schottky barrier diode having a Schottky electrode contacting the d... | 01/04/2011 |
| 7816733 | SiC semiconductor having junction barrier schottky device A semiconductor device having a JBS diode includes: a SiC substrate; a drift layer on the substrate; an insulation film on the drift layer having an opening in a cell region; a Schottky barrier diode having a Schottky electrode contacting the drift layer through the... | 10/19/2010 |
| 7732862 | Power semiconductor device having improved performance and method In one embodiment, a semiconductor device is formed in a body of semiconductor material. The semiconductor device includes an offset body region. ... | 06/08/2010 |
| 7692240 | Insulated gate semiconductor device Channel regions and gate electrodes are also disposed continuously with transistor cells below a gate pad electrode. The transistor cells are formed in a stripe pattern and allowed to contact a source electrode. In this way, the channel regions and the gate electrod... | 04/06/2010 |
| 7655981 | Superjunction semiconductor device In accordance with an embodiment of the invention, a superjunction semiconductor device includes an active region and a termination region surrounding the active region. A central vertical axis of a boundary column of a second conductivity type material defines the ... | 02/02/2010 |
| 7646059 | Semiconductor device including field effect transistor for use as a high-speed switching device and a power device A body layer of a first conductivity type is formed on a semiconductor substrate, and a source layer of a second conductivity type is formed in a surface region of the body layer. An offset layer of the second conductivity type is formed on the semiconductor substra... | 01/12/2010 |
| 7602018 | High withstand-voltage semiconductor device A high withstand-voltage semiconductor device has a gate electrode in a semiconductor layer of one conductivity type, a drain diffusion layer and a source diffusion layer, a thick gate insulating layer between the drain diffusion layer and the gate electrode, and a ... | 10/13/2009 |
| 7573100 | High voltage semiconductor device and method for fabricating the same There is provided a high voltage semiconductor device comprising: a semiconductor substrate of a first conductivity type, including a first region, a second region relatively lower than the first region, and a sloped region between the first region and the second re... | 08/11/2009 |
| 7485924 | Lateral double-diffused field effect transistor and integrated circuit having same In a lateral double-diffused field effect transistor of the present invention, a gate insulating film includes a first gate insulating film covering a source diffusion layer up to a region beyond the pattern of a body diffusion layer and a second gate insulating fil... | 02/03/2009 |
| 7482654 | MOSgated power semiconductor device with source field electrode A power semiconductor device which includes a source field electrode, and at least one insulated gate electrode adjacent a respective side of the source field electrode, the source field electrode and the gate electrode being disposed in a common trench, and a metho... | 01/27/2009 |
| 7479679 | Field effect transistor and application device thereof The present invention provides a MOSFET having a low on-state resistance and a high withstand voltage as well as a small output capacitance (C(gd), etc.). The MOSFET has a p-type base layer 4 and a n-type source layer 5 selectively formed on the surfac... | 01/20/2009 |
| 7436025 | Termination structures for super junction devices A semiconductor device 10 is provided. A first layer 12 has a first dopant type; a second layer 14 is provided over the first layer 12; and a third layer 16 is provided over the second layer and has the first dopant type. A plurali... | 10/14/2008 |
| 7436041 | Electrostatic discharge protection circuit using a double-triggered silicon controlling rectifier An ESD protection circuit using a double-triggered silicon controller rectifier (SCR). The double-triggered silicon controller rectifier (SCR) includes N+ diffusion areas, P+ diffusion areas, a first N-well region, a second N-well region and a third N-well region fo... | 10/14/2008 |
| 7429774 | Electrostatic discharge (ESD) protection MOS device and ESD circuitry thereof An NMOS device having protection against electrostatic discharge. The NMOS device includes a P-substrate, a P-epitaxial layer overlying the P-substrate, a P-well in the P-epitaxial layer, an N-well in the P-epitaxial layer and encompassing the P-well, an N-Buried La... | 09/30/2008 |
| 7427795 | Drain-extended MOS transistors and methods for making the same Drain-extended MOS transistors (T1, T2) and semiconductor devices (102) are described, as well as fabrication methods (202) therefor, in which a p-buried layer (130) is formed prior to formation of epitaxial silicon (106) ov... | 09/23/2008 |
| 7423319 | LDPMOS structure with enhanced breakdown voltage A semiconductor structure includes a first well region of a first conductivity type overlying a substrate, a second well region of a second conductivity type opposite the first conductivity type overlying the substrate and laterally adjoining the first well region, ... | 09/09/2008 |
| 7420245 | Semiconductor device and method of manufacturing the same A first semiconductor pillar layer of a first conductivity type is formed on a main surface of a semiconductor substrate of the first conductivity type. A second semiconductor pillar layer of a second conductivity type is formed adjacent to the first semiconductor p... | 09/02/2008 |
| 7414268 | High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities Silicon carbide high voltage semiconductor devices and methods of fabricating such devices are provided. The devices include a voltage blocking substrate. Insulated gate bipolar transistors are provided that have a voltage blocking substrate. Planar and beveled edge... | 08/19/2008 |
| 7411248 | Vertical unipolar component periphery A vertical unipolar component formed in a semiconductor substrate, comprising vertical fingers made of a conductive material surrounded with silicon oxide, portions of the substrate being present between the fingers and the assembly being coated with a conductive la... | 08/12/2008 |
| 7378317 | Superjunction power MOSFET Methods and apparatus are provided for TMOS devices, comprising multiple N-type source regions, electrically in parallel, located in multiple P-body regions separated by N-type JFET regions at a first surface. The gate overlies the body channel regions and the JFET ... | 05/27/2008 |
| 7372104 | High voltage CMOS devices A transistor suitable for high-voltage applications is provided. The transistor is formed on a substrate having a deep well of a first conductivity type. A first well of the first conductivity type and a second well of a second conductivity type are formed such that... | 05/13/2008 |
| 7372111 | Semiconductor device with improved breakdown voltage and high current capacity The superjunction semiconductor device includes a drain drift section, which includes a first alternating conductivity type layer formed of first n-type regions and first p-type regions arranged alternately. The device also includes a peripheral section around the d... | 05/13/2008 |
| 7361959 | CMOS circuits including a passive element having a low end resistance The present invention relates to complementary metal-oxide-semiconductor (CMOS) circuits, as well as methods for forming such CMOS circuits. More specifically, the present invention relates to CMOS circuits that contain passive elements, such as buried resistors, ca... | 04/22/2008 |
| 7361955 | High-voltage MOS device with dummy diffusion region A high-voltage MOS device includes a substrate; a drift ion well formed in the substrate; a first isolation region formed in the drift ion well; a gate electrode formed on the substrate and covering a portion of the first isolation region; a drain doping region disp... | 04/22/2008 |
