Class 257/332 - Gate electrode self-aligned with groove

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter wherein the gate electrode is self-aligned
No. of patents: 447
Last issue date: 05/08/2012

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Number	Title	Issue Date
8174066	Semiconductor device and method of manufacturing semiconductor device A semiconductor device includes: a semiconductor layer; a first conductivity type region of a first conductivity type formed in a base layer portion of the semiconductor layer; a body region of a second conductivity type formed in the semiconductor layer to be in co...	05/08/2012
8143670	Self aligned field effect transistor structure Provided is a self aligned filed effect transistor structure. The self aligned field effect transistor structure includes: an active region on a substrate; a U-shaped gate insulation pattern on the active region; and a gate electrode self-aligned by the gate insulat...	03/27/2012
8097917	Silicon carbide semiconductor device A silicon carbide semiconductor device includes: a semiconductor substrate having a silicon carbide substrate, a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer; a trench penetrating the second and the third semiconductor lay...	01/17/2012
8097918	Semiconductor arrangement including a load transistor and sense transistor A semiconductor arrangement including a load transistor and a sense transistor that are integrated in a semiconductor body. One embodiment provides a number of transistor cells integrated in the semiconductor body, each transistor cell including a first active trans...	01/17/2012
8072027	3D channel architecture for semiconductor devices Semiconductor devices and methods for making such devices that contain a 3D channel architecture are described. The 3D channel architecture is formed using a dual trench structure containing with a plurality of lower trenches extending in an x and y directional chan...	12/06/2011
8058687	Split gate with different gate materials and work functions to reduce gate resistance of ultra high density MOSFET This invention discloses a trenched metal oxide semiconductor field effect transistor (MOSFET) cell. The trenched MOSFET cell includes a trenched gate opened from a top surface of the semiconductor substrate surrounded by a source region encompassed in a body region...	11/15/2011
8030704	Method of manufacturing semiconductor device A trench gate type power transistor of high performance is provided. A trench gate as a gate electrode is formed in a super junction structure comprising a drain layer and an epitaxial layer. In this case, the gate electrode is formed in such a manner that an upper ...	10/04/2011
8026547	Semiconductor memory device and method of manufacturing the same A semiconductor memory device has side surfaces of neighboring bit lines that do not face each other to reduce a capacitance of a parasitic capacitor formed between adjacent bit lines. The semiconductor memory device includes contact plugs formed on a semiconductor ...	09/27/2011
8008716	Inverted-trench grounded-source FET structure with trenched source body short electrode This invention discloses bottom-source lateral diffusion MOS (BS-LDMOS) device. The device has a source region disposed laterally opposite a drain region near a top surface of a semiconductor substrate supporting a gate thereon between the source region and a drain ...	08/30/2011
7999313	Semiconductor device having vertical pillar transistors and method for manufacturing the same A semiconductor device includes vertical pillar transistors formed in respective silicon pillars of a silicon substrate. The gates of the vertical pillar transistor are selectively formed on a single surface of lower portions of the silicon pillars, and drain areas ...	08/16/2011
7994573	Structure and method for forming power devices with carbon-containing region A field effect transistor (FET) includes body regions of a first conductivity type over a semiconductor region of a second conductivity type. The body regions form p-n junctions with the semiconductor region. Source regions of the second conductivity type extend ove...	08/09/2011
7977742	Trench-gate MOSFET with capacitively depleted drift region A trench-gate metal oxide semiconductor field-effect transistor (MOSFET) includes a field plate that extends into a drift region of the MOSFET. The field plate, which is electrically coupled to a source region, is configured to deplete the drift region when the MOSF...	07/12/2011
7968940	Insulated gate bipolar transistor device comprising a depletion-mode MOSFET Double gate IGBT having both gates referred to a cathode in which a second gate is for controlling flow of hole current. In on-state, hole current can be largely suppressed. While during switching, hole current is allowed to flow through a second channel. Incorporat...	06/28/2011
7943993	Structure and method for forming field effect transistor with low resistance channel region A trench-gate field effect transistor includes trenches extending into a silicon region of a first conductivity type, and a gate electrodes in each trench. Body regions of second conductivity type extend over the silicon region between adjacent trenches. Each body r...	05/17/2011
7932557	Semiconductor contact device The invention provides an advanced metallization technique for fabricating a memory cell array on a substrate. The array is fabricated by forming discrete and self-aligned vias in a first layer disposed over the array to form contacts to each of the source and drain...	04/26/2011
7923776	Trench-gate field effect transistor with channel enhancement region and methods of forming the same A field effect transistor includes a body region of a first conductivity type in a semiconductor region of a second conductivity type. A gate trench extends through the body region and terminating within the semiconductor region. A source region of the second conduc...	04/12/2011
7910990	Insulated gate type semiconductor device and method for fabricating the same In an insulated-gate type semiconductor device in which a gate-purpose conductive layer is embedded into a trench which is formed in a semiconductor substrate, and a source-purpose conductive layer is provided on a major surface of the semiconductor substrate, a por...	03/22/2011
7863679	Semiconductor apparatus and method of manufacturing the same A vertical power MOSFET includes a semiconductor substrate including a trench, a gate electrode layer having a prescribed impurity concentration and being formed inside the trench, and a cap insulating layer having a lower impurity concentration than the impurity co...	01/04/2011
7855413	Diode with low resistance and high breakdown voltage A transistor and diode having a low resistance and a high breakdown voltage are provided. When the bottom portion of a narrow trench having the shape of a rectangular parallelepiped is filled with a semiconductor grown by epitaxial method, a {1 0 0} plane is exposed...	12/21/2010
7843001	Insulated gate type semiconductor device and method for fabricating the same In an insulated-gate type semiconductor device in which a gate-purpose conductive layer is embedded into a trench which is formed in a semiconductor substrate, and a source-purpose conductive layer is provided on a major surface of the semiconductor substrate, a por...	11/30/2010
7825464	Semiconductor device with recessed active region and gate in a groove A semiconductor device and a method for manufacturing the same are disclosed. The disclosed semiconductor device includes a semiconductor substrate having a device isolation structure for delimiting an active region, the active region being recessed and grooves bein...	11/02/2010
7825463	Semiconductor device having asymmetric bulb-type recess gate and method for manufacturing the same A semiconductor device includes a silicon substrate; a device isolation structure formed in the silicon substrate to delimit an active region which has a pair of gate forming areas, a drain forming area between the gate forming areas, and source forming areas outsid...	11/02/2010
7825465	Structure and method for forming field effect transistor with low resistance channel region A trench-gate field effect transistor includes trenches extending into a silicon region of a first conductivity type, and a gate electrodes in each trench. Body regions of second conductivity type extend over the silicon region between adjacent trenches. Each body r...	11/02/2010
7659576	Semiconductor device and method of manufacturing the same A punch-through type IGBT generally has a thick p++-type collector layer. Therefore, the FWD need be externally attached to the IGBT when the IGBT is used as a switching element in an inverter circuit for driving a motor load, and thus the number of proce...	02/09/2010
7649223	Semiconductor device having superjunction structure and method for manufacturing the same An n-type drift region includes an active element region and a peripheral region. A p-type base region is formed at least in the active element region. A trench-type gate electrode is formed in each of the active element region and the peripheral region. An n-type s...	01/19/2010
7635893	Transistor, memory cell array and method of manufacturing a transistor A transistor, memory cell array and method of manufacturing a transistor are disclosed. In one embodiment, the invention refers to a transistor, which is formed at least partially in a semiconductor substrate, comprising a first and a second source/drain regions, a ...	12/22/2009
7582932	Silicon carbide semiconductor device and method for manufacturing the same A silicon carbide semiconductor device includes: a semiconductor substrate having a silicon carbide substrate, a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer; a trench penetrating the second and the third semiconductor lay...	09/01/2009
7564098	Semiconductor device having trench-type gate and its manufacturing method capable of simplifying manufacturing steps In a semiconductor device, a gate silicon dioxide layer is formed within a trench of a semiconductor wafer. A first gate electrode is formed on a sidewall of the trench of the semiconductor wafer via the gate silicon dioxide layer. An insulating layer is formed on a...	07/21/2009
7459749	High speed power mosfet A semiconductor device provided with: a channel region formed in a surface of a semiconductor substrate in a predetermined depth range, a trench being formed in the surface as penetrating the channel region in a depthwise direction; a gate insulating film formed on ...	12/02/2008
7439183	Method of manufacturing a semiconductor device, and a semiconductor substrate A method of manufacturing a semiconductor device. In the method, a thin film is formed on an Si substrate having face orientation (100), that part of the thin film, which lies on an element-isolating region, is removed. Then, the Si substrate is subjected to ...	10/21/2008
7436069	Semiconductor device, having a through electrode semiconductor module employing thereof and method for manufacturing semiconductor device having a through electrode The layout density of the through electrodes in the horizontal plane of the substrate is enhanced. Through holes 103 extending through the silicon substrate 101 is provided. An insulating film 105 is buried within the through hole 103. A ...	10/14/2008
7423317	Split electrode gate trench power device A power semiconductor device which includes gate liners extending along gate insulation liners and an insulation block spacing the two gate liners. ...	09/09/2008
7423318	Recessed gate structure with stepped profile Disclosed herein are a recess-gate structure in which junctions have a thickness significantly smaller than the thickness of a device isolation layer to thereby prevent shorting of the junctions located at opposite lateral sides of the device isolation layer close t...	09/09/2008
7423316	Semiconductor devices The dense accumulation of hole carriers can be obtained over a wide range of a semiconductor region in a floating state formed within a body region of an IGBT. An n type semiconductor region (52) whose potential is floating is formed within a p− ...	09/09/2008
7408224	Vertical transistor structure for use in semiconductor device and method of forming the same According to some embodiments, a structure of vertical transistor includes gate electrodes distanced by a predetermined interval in an active region, formed in a vertical shape to have a predetermined depth from a top surface of a semiconductor substrate. A gate ins...	08/05/2008
7405437	CMOS image sensor and method for fabricating the same A CMOS image sensor includes a first conductive type semiconductor substrate defined by a photodiode area and a transistor area, a trench formed in the semiconductor substrate corresponding to a transfer transistor of the transistor area, a gate electrode of the tra...	07/29/2008
7402863	Trench FET with reduced mesa width and source contact inside active trench A trench FET has source contacts which contact the entire top surface of source regions, and contact a portion of side walls of the source regions. The side walls of the source regions form a portion of the side walls of the trenches in the trench FET. ...	07/22/2008
7400013	High-voltage transistor having a U-shaped gate and method for forming same According to one exemplary embodiment, a method includes forming first, second, and third shallow trench isolation regions in a substrate, wherein the second shallow trench isolation region is situated between the first and the third shallow trench isolation regions...	07/15/2008
7393749	Charge balance field effect transistor A field effect transistor is formed as follows. A semiconductor region of a first conductivity type with an epitaxial layer of a second conductivity extending over the semiconductor region is provided. A trench extending through the epitaxial layer and terminating i...	07/01/2008
7391079	Metal oxide semiconductor device A method of fabricating an MOS device is described. A substrate doped a first type dopant is provided as a drain. A first type epitaxial layer is formed on the substrate and is patterned with a trench to form several islands. A gate dielectric layer is than formed o...	06/24/2008

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Class 257/332 - Gate electrode self-aligned with groove