Class 257/328 - Vertical channel or double diffused insulated gate field effect device provided with means to protect against excess voltage (e.g., gate protection diode)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter wherein the short channel IGFET has a vertical
No. of patents: 978
Last issue date: 05/22/2012

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Number	Title	Issue Date
8183626	High-voltage MOS devices having gates extending into recesses of substrates An integrated circuit structure includes a high-voltage well (HVW) region in a semiconductor substrate; a first double diffusion (DD) region in the HVW region; and a second DD region in the HVW region. The first DD region and the second DD region are spaced apart fr...	05/22/2012
8169019	Metal-oxide-semiconductor chip and fabrication method thereof A metal-oxide-semiconductor chip having a semiconductor substrate, an epitaxial layer, at least a MOS cell, and a metal pattern layer is provided. The epitaxial layer is located on the semiconductor substrate and has an active region, a termination region, and a scr...	05/01/2012
8159023	Semiconductor device A semiconductor device includes a semiconductor substrate of a first conductivity type, a first semiconductor region of the first conductivity type on the semiconductor substrate, and a plurality of second semiconductor regions of a second conductivity type disposed...	04/17/2012
8159022	Robust semiconductor device with an emitter zone and a field stop zone A power semiconductor component is described. One embodiment provides a semiconductor body having an inner zone and an edge zone. A base zone of a first conduction type is provided. The base zone is arranged in the at least one inner zone and the at least one edge z...	04/17/2012
8159021	Trench MOSFET with double epitaxial structure A trenched semiconductor power device includes a plurality of trenched gates surrounded by source regions near a top surface of a semiconductor substrate encompassed in body regions. The trenched semiconductor power device further includes a first epitaxial layer ab...	04/17/2012
8148774	Method of fabricating semiconductor device with a high breakdown voltage between neighboring wells To provide a semiconductor device in which an interval between first wells can be shortened by improving a separation breakdown voltage between the first wells and a method for manufacturing the same. A semiconductor device includes a first conductivity type semicon...	04/03/2012
8120094	Shallow trench isolation with improved structure and method of forming A shallow trench isolation (STI) structure has a top portion tapering in width from wide to narrow in a direction from a substrate surface, from a first width at a top of the first portion to a second width at a bottom of the first portion. The STI structure also in...	02/21/2012
8120095	High-density, trench-based non-volatile random access SONOS memory SOC applications The present invention provides two-transistor silicon-oxide-nitride-oxide-semiconductor (2-Tr SONOS) non-volatile memory cells with randomly accessible storage locations as well as a design structure including the semiconductor memory devices embodied in a machine r...	02/21/2012
8110868	Power semiconductor component with a low on-state resistance A semiconductor component having a semiconductor body is disclosed. In one embodiment, the semiconductor component includes a drift zone of a first conductivity type, a drift control zone composed of a semiconductor material which is arranged adjacent to the drift z...	02/07/2012
8110869	Planar SRFET using no additional masks and layout method A semiconductor power device supported on a semiconductor substrate of a first conductivity type with a bottom layer functioning as a bottom electrode and an epitaxial layer overlying the bottom layer with a same conductivity type as the bottom layer. The semiconduc...	02/07/2012
8101991	Semiconductor device with vertical current flow and low substrate resistance and manufacturing process thereof A semiconductor device with vertical current flow includes a body having a substrate made of semiconductor material. At least one electrical contact on a first face of the body. A metallization structure is formed on a second face of the body, opposite to the first ...	01/24/2012
8097914	Semiconductor device and manufacturing method of the same Disclosed herein is a semiconductor device including: a main body transistor region; and an electrostatic discharge protection element region, wherein the main body transistor region includes, a drain region; a drift region; body regions; a gate insulating film; gat...	01/17/2012
8093651	MOS device with integrated schottky diode in active region contact trench A semiconductor device is formed on a semiconductor substrate. The device comprises a drain, an epitaxial layer overlaying the drain, and an active region. The active region comprises a body disposed in the epitaxial layer, having a body top surface and a body botto...	01/10/2012
8089122	Vertical trench gate transistor semiconductor device and method for fabricating the same A first region functioning as a transistor includes a drain region, a body region formed over the drain region, a source region formed over the body region and a trench formed through the body region and having a gate electrode buried therein. A source region is for...	01/03/2012
8076716	Electronic device including a trench and a conductive structure therein An electronic device can include a transistor. In an embodiment, the transistor can include a semiconductor layer having a primary surface and a conductive structure. The conductive structure can include a horizontally-oriented doped region lying adjacent to the pri...	12/13/2011
8067796	Semiconductor component with cell structure and method for producing the same A semiconductor component comprises a semiconductor body comprising a first component electrode arranged on one of the surfaces of the semiconductor body, a second component electrode arranged on one of the surfaces of the semiconductor body, and a component control...	11/29/2011
8063439	Semiconductor device and fabrication method thereof A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a semiconductor substrate which comprise a first type well and a second type well, and a plurality of junction regions therebetween, wherein each of the junction ...	11/22/2011
8063438	Vertical-type semiconductor devices In a vertical-type memory device and a method of manufacturing the vertical-type memory device, the vertical memory device includes an insulation layer pattern of a linear shape provided on a substrate, pillar-shaped single-crystalline semiconductor patterns provide...	11/22/2011
8058682	Semiconductor device A semiconductor structure includes a number of semiconductor regions, a pair of dielectric regions and a pair of terminals. The first and second regions of the structure are respectively coupled to the first and second terminals. The third region of the structure is...	11/15/2011
8053830	Semiconductor device A semiconductor device including a semiconductor section including a semiconductor element and a recess formed in one of main surfaces and a metallic member at least a part of which is embedded in the recess. A void is formed in a region of the metallic member corre...	11/08/2011
8049270	Semiconductor device This semiconductor device an epitaxial layer of a first conductivity type formed on a surface of the first semiconductor layer, and a base layer of a second conductivity type formed on a surface of the epitaxial layer. A diffusion layer of a first conductivity type ...	11/01/2011
8049271	Power semiconductor device having a voltage sustaining layer with a terraced trench formation of floating islands A method is provided for forming a power semiconductor device. The method begins by providing a substrate of a second conductivity type and then forming a voltage sustaining region on the substrate. The voltage sustaining region is formed by depositing an epitaxial ...	11/01/2011
8044457	Transient over-voltage clamp In various embodiments, the invention relates to semiconductor structures, such as planar MOS structures, suitable as voltage clamp devices. Additional doped regions formed in the structures may improve over-voltage protection characteristics. ...	10/25/2011
8022470	Semiconductor device with a trench gate structure and method for the production thereof A semiconductor device with a trench gate structure includes a semiconductor body with switching electrodes. At least gate electrode controls the off state and the on state between the switching electrodes. The at least one gate electrode in the trench gate structur...	09/20/2011
8013385	Semiconductor device A semiconductor device of the present invention has a first contact and a second contact which are located over a device isolation film so as to be opposed with each other, and have a length in the horizontal direction larger than the height; a first electro-conduct...	09/06/2011
8004036	MOSFET-Schottky rectifier-diode integrated circuits with trench contact structures for device shrinkage and performance improvement A trench MOSFET device with embedded Schottky rectifier, Gate-Drain and Gate-Source diodes on single chip is formed to achieve device shrinkage and performance improvement. The present semiconductor devices achieve low Vf and reverse leakage current for embedded Sch...	08/23/2011
7999309	Semiconductor device In a semiconductor device and associated methods, the semiconductor device includes a substrate, an insulation layer on the substrate, a conductive structure on the insulation layer, the conductive structure including at least one metal silicide film pattern, a semi...	08/16/2011
7994568	Vertical transistor of semiconductor device and method for forming the same A vertical transistor of a semiconductor device and a method for forming the same are disclosed. The vertical transistor comprises a silicon fin disposed on a semiconductor substrate, a source region disposed in the semiconductor substrate below a lower portion of t...	08/09/2011
7989879	LDMOS transistor The LDMOS transistor (1) of the invention comprises a source region (3), a channel region (4), a drain extension region (7) and a gate electrode (10). The LDMOS transistor (1) further comprises a first gate oxide layer (8...	08/02/2011
7989878	Cathode cell design An n-channel insulated gate semiconductor device with an active cell (5) comprising a p channel well region (6) surrounded by an n type third layer (8), the device further comprising additional well regions (11) formed adjacent to the cha...	08/02/2011
7968936	Quasi-vertical gated NPN-PNP ESD protection device Fashioning a quasi-vertical gated NPN-PNP (QVGNP) electrostatic discharge (ESD) protection device is disclosed. The QVGNP ESD protection device has a well having one conductivity type formed adjacent to a deep well having another conductivity type. The device has a ...	06/28/2011
7964911	Semiconductor element and electrical apparatus In a semiconductor element (20) including a field effect transistor (90), a schottky electrode (9a) and a plurality of bonding pads (12S, 12G), at least one of the plurality of bonding pads (12S, 12G) is dispos...	06/21/2011
7964912	High-voltage vertical transistor with a varied width silicon pillar In one embodiment, a vertical HVFET includes a pillar of semiconductor material a pillar of semiconductor material arranged in a loop layout having at least two substantially parallel and substantially linear fillet sections each having a first width, and at least t...	06/21/2011
7956410	Trench MOSFET with trench gates underneath contact areas of ESD diode for prevention of gate and source shortage A trench DMOS transistor employing trench contacts has overvoltage protection for prevention of shortage between gate and source, comprising a plurality of first-type function trenched gates, at least one second-type function trenched gate and at least two third-typ...	06/07/2011
7956409	Semiconductor device having trench gate structure The present invention provides a vertical MOSFET which has striped trench gate structure which can secure avalanche resistance without increasing Ron. A vertical MOSFET 100 comprises a plurality of gate trenches 7 which is arranged in stripes, an array...	06/07/2011
7952137	Trench semiconductor device and method of making the same A trench semiconductor device and a method of making the same are provided. The trench semiconductor device includes a trench MOS device and a trench ESD protection device. The trench ESD protection device is electrically connected between the gate electrode and sou...	05/31/2011
7943986	Method for fabricating a body contact in a finfet structure and a device including the same A method for fabricating a Finfet device with body contacts and a device fabricated using the method are provided. In one example, a silicon-on-insulator substrate is provided. A T-shaped active region is defined in the silicon layer of the silicon-on-insulator subs...	05/17/2011
7939882	Integration of sense FET into discrete power MOSFET A semiconductor device includes a main field effect transistor (FET) and one or more sense FETs. A transistor portion of the sense FET is surrounded by transistors of the main FET. An electrical isolation structure that surrounds the main FET is configured to electr...	05/10/2011
7936007	LDMOS with self aligned vertical LDD backside drain A field effect transistor includes a semiconductor region of a first conductivity type having an upper surface and a lower surface, the lower surface of the semiconductor region extending over and abutting a substrate. A well regions of a second conductivity type is...	05/03/2011
7932553	Semiconductor device including a plurality of cells A semiconductor device includes an insulated gate transistor and a resistor. The insulated gate transistor includes a plurality of first cells for supplying electric current to a load and a second cell for detecting an electric current that flows in the first cells....	04/26/2011

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Class 257/328 - Vertical channel or double diffused insulated gate field effect device provided with means to protect against excess voltage (e.g., gate protection diode)