Class 257/316 - With additional contacted control electrode

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter including an additional control (gate) electrode
No. of patents: 2477
Last issue date: 05/29/2012

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Number	Title	Issue Date
8188534	Semiconductor memory device The present invention aims at providing a semiconductor memory device that can be manufactured by a MOS process and can realize a stable operation. A storage transistor has impurity diffusion regions, a channel formation region, a charge accumulation node, a gate ox...	05/29/2012
8188533	Write once read only memory employing charge trapping in insulators Structures and methods for write once read only memory employing charge trapping in insulators are provided. The write once read only memory cell includes a metal oxide semiconductor field effect transistor having a first source/drain region, a second source/drain r...	05/29/2012
8183620	Semiconductor memory and fabrication method for the same A semiconductor memory includes memory cell transistors including a tunnel insulating film, a floating gate electrode, a first insulating film, a control gate electrode, and a first metal salicide film; low-voltage transistors having a first p-type source region and...	05/22/2012
8174062	Semiconductor memory device and manufacturing method thereof A semiconductor memory device includes: a semiconductor substrate; a first impurity region; a second impurity region; a channel region; a first gate formed on a main surface on a side of the first impurity region; a second gate formed on the main surface on a side o...	05/08/2012
8164135	Non-diffusion junction split-gate nonvolatile memory cells and arrays, methods of programming, erasing, and reading thereof, and methods of manufacture Nonvolatile flash memory systems and methods are disclosed having a semiconductor substrate of a first conductivity type, including non-diffused channel regions through which electron flow is induced by application of voltage to associated gate elements. A plurality...	04/24/2012
8154069	NAND flash memory with selection transistor having two-layer inter-layer insulation film A nonvolatile semiconductor memory includes a memory cell string having a plurality of memory cell transistors connected in series, a selection gate transistor connected in series with one end of the memory cell string, and having a gate electrode provided on a gate...	04/10/2012
8154070	Semiconductor memory device and method of manufacturing the same A nonvolatile memory includes a semiconductor substrate having a body member and a step member formed on the body member, a highly doped first well layer formed on the step member, a control electrode formed on the step member, a first and a second diffusion layers ...	04/10/2012
8138541	Memory cells Some embodiments include memory cells that contain floating bodies and diodes. The diodes may be gated diodes having sections doped to a same conductivity type as the floating bodies, and such sections of the gated diodes may be electrically connected to the floatin...	03/20/2012
8134198	Nonvolatile semiconductor memory A nonvolatile semiconductor memory includes active regions . . . AAj−1, AAj, AAj−1, . . . formed in a semiconductor substrate; a plurality of word lines WL0, WL1, . . . in the row direction; memory cell transistors,...	03/13/2012
8134199	Nonvolatile semiconductor memory A nonvolatile semiconductor memory fabrication method including forming a first insulating film and a floating gate electrode material on a semiconductor substrate; forming a gate insulating film and a floating gate electrode by etching the first insulating film and...	03/13/2012
8125017	Semiconductor integrated circuit device with reduced leakage current The gate tunnel leakage current is increased in the up-to-date process, so that it is necessary to reduce the gate tunnel leakage current in the LSI which is driven by a battery for use in a cellular phone and which needs to be in a standby mode at a low leakage cur...	02/28/2012
8115246	Semiconductor device including protrusion type isolation layer A semiconductor device may include a semiconductor layer having a convex portion and a concave portion surrounding the convex portion. The semiconductor device may further include a protrusion type isolation layer filling the concave portion and extending upward so ...	02/14/2012
8110865	Semiconductor device and method for manufacturing the same A semiconductor device includes a semiconductor substrate, a first insulating film formed on the semiconductor substrate, a charge storage layer formed on the first insulating film, a second insulating film formed on the charge storage layer, and a control electrode...	02/07/2012
8110864	Nonvolatile semiconductor memory device In one aspect of the present invention, a nonvolatile semiconductor memory device may include a semiconductor substrate; a plurality of tunnel insulating films formed on the semiconductor substrate at predetermined intervals in a first direction; a plurality of floa...	02/07/2012
8097911	Etch stop structures for floating gate devices Etch stop structures for floating gate devices are generally described. In one example, a floating gate device includes a semiconductor substrate having a surface on which one or more floating gate devices are formed, a tunnel dielectric coupled with the surface of ...	01/17/2012
8093647	Nonvolatile semiconductor memory having transistor with a diffusion blocking layer between the lower gate and fully silicided upper gate A memory cell has a floating gate electrode, a first inter-gate insulating film arranged on the floating gate electrode, and a control gate electrode arranged on the first inter-gate insulating film. An FET has a lower gate electrode, a second inter-gate insulating ...	01/10/2012
8089117	Semiconductor structure A desired property for a metal gate electrode layer is that it can cover a three-dimensional semiconductor structure having a microstructure with high step coverage. Another desired property for the metal gate electrode layer is that the surface of a deposited elect...	01/03/2012
8089118	Method for selective gate halo implantation in a semiconductor die and related structure According to one embodiment, a method for selective gate halo implantation includes forming at least one gate having a first orientation and at least one gate having a second orientation over a substrate. The method further includes performing a halo implant over th...	01/03/2012
8089119	Semiconductor memory device and write method of the same A write and erase method of a semiconductor memory device includes a floating gate type transistor having a semiconductor substrate, a gate insulating film formed on the semiconductor substrate, a floating gate electrode formed on the gate insulating film, and a con...	01/03/2012
8084806	Isolation structure for a memory cell using A1Odielectric The invention provides, in one exemplary embodiment, an isolation gate formed over a substrate for biasing the substrate and providing isolation between adjacent active areas of an integrated circuit structure, for example a DRAM memory cell. An aluminum oxide (Al2O...	12/27/2011
8072021	Nonvolatile semiconductor memory device A memory cell includes a floating gate electrode, a first inter-electrode insulating film and a control gate electrode. A peripheral transistor includes a lower electrode, a second inter-electrode insulating film and an upper electrode. The lower electrode and the u...	12/06/2011
8072022	Apparatus and methods for improved flash cell characteristics Embodiments of an apparatus and methods for providing improved flash memory cell characteristics are generally described herein. Other embodiments may be described and claimed. ...	12/06/2011
8063432	Semiconductor device having nitride film between gate insulation film and gate electrode A semiconductor device includes a tunnel insulation film formed on a semiconductor substrate, a floating gate electrode formed on the tunnel insulation film, an inter-electrode insulation film formed on the floating gate electrode, a control gate electrode formed on...	11/22/2011
8053825	Stacked gate nonvolatile semiconductor memory and method for manufacturing the same A stacked gate nonvolatile semiconductor memory includes at least a memory cell transistor and a selective gate transistor which are formed on a semiconductor substrate. The memory cell transistor includes a floating gate made of a semiconductor material below an in...	11/08/2011
8049267	Semiconductor device and method of manufacturing the same A semiconductor device includes a semiconductor substrate, a gate insulating film formed on the substrate, a first gate electrode formed on the gate insulating film, source and drain regions formed in the substrate so as to sandwich the first gate electrode, an inte...	11/01/2011
8049268	Dielectric structure in nonvolatile memory device and method for fabricating the same A dielectric structure in a nonvolatile memory device and a method for fabricating the same are provided. The dielectric structure includes: a first oxide layer; a first high-k dielectric film formed on the first oxide layer, wherein the first high-k dielectric film...	11/01/2011
8044450	Semiconductor device with a non-volatile memory and resistor A semiconductor device comprising a resistance element with a high resistance and high resistance accuracy and a non-volatile semiconductor storage element is rationally realized by comprising the non-volatile semiconductor storage element comprising a first isolati...	10/25/2011
8044451	Method of manufacturing semiconductor device having notched gate MOSFET Provided is a method of manufacturing a semiconductor device, by which a cell transistor formed on a cell array area of a semiconductor substrate employs a structure in which an electrode in the shape of spacers is used to form a gate and a multi-bit operation is po...	10/25/2011
8039888	Conductive spacers for semiconductor devices and methods of forming A method of forming a conductive spacer on a semiconductor device. The method includes depositing a polysilicon layer on the semiconductor device, selectively implanting dopant ions in the polysilicon layer on a first side of a transistor region of the semiconductor...	10/18/2011
8035154	Semiconductor device including a plurality of memory cells with no difference in erasing properties A semiconductor device includes a semiconductor substrate, a plurality of memory cells, a plurality of bit lines, and a plurality of source lines. The memory cells are located in the semiconductor substrate. Each of the memory cells includes a trench provided in the...	10/11/2011
8030699	Flash memory device Disclosed herein is a flash memory device in which the distribution of threshold voltage is significantly reduced and the durability is improved even though a floating gate has a micro- or nano-size length. It comprises a tunneling insulation film formed on a semico...	10/04/2011
8022463	Semiconductor device and method of manufacturing the same This semiconductor device comprises a semiconductor substrate, a gate insulating film formed thereon, and a gate electrode formed through the gate insulating film on the semiconductor substrate. The first silicon nitride film is formed on the upper surface of the ga...	09/20/2011
8022464	Semiconductor memory device and manufacturing method thereof This semiconductor memory device comprises a semiconductor substrate, a plurality of tunnel insulator films formed on the semiconductor substrate along a first direction and a second direction orthogonal to the first direction with certain spaces in each directions,...	09/20/2011
8017990	Nonvolatile semiconductor memory device and method of fabricating the same A nonvolatile semiconductor memory device includes a gate insulating film formed on a semiconductor substrate, a first gate electrode corresponding to a memory cell transistor and a second gate electrode. The first gate electrode includes a floating gate electrode f...	09/13/2011
8013380	Non-volatile semiconductor memory device and method of manufacturing the same A MONOS type non-volatile semiconductor memory device which is capable of electrically writing, erasing, reading and retaining data, the memory device including source/drain regions, a first gate insulating layer, a first charge trapping layer formed on the first ga...	09/06/2011
8013381	Semiconductor device A semiconductor device has a semiconductor substrate of a first conductivity type; first to third high-voltage insulated-gate field effect transistors formed on a principal surface of the semiconductor substrate; a first device isolation insulating film that is form...	09/06/2011
8008707	Nonvolatile semiconductor memory device provided with charge storage layer in memory cell A nonvolatile semiconductor memory device includes a semiconductor substrate, a first insulation layer formed on the semiconductor substrate, a charge storage layer formed on the first insulation layer, a second insulation layer formed on the charge storage layer, a...	08/30/2011
8008705	Semiconductor storage device and method of manufacturing same Disclosed is a semiconductor storage device having a trench around a bit-line diffusion region in an area of a p-well, which constitutes a memory cell area, that is not covered by a word line and a select gate that intersects the word line. An insulating film is bur...	08/30/2011
8008706	Non-volatile memory cell and non-volatile memory cell array with minimized influence from neighboring cells The present invention relates to a non-volatile memory cell and a method of fabricating the same. The non-volatile memory cell according to the present invention comprises a substrate, a first oxide film formed over an active region of the substrate, a source and dr...	08/30/2011
8008708	Metal line of semiconductor device having a diffusion barrier and method for forming the same An insulation layer is formed on a semiconductor substrate so as to define a metal line forming region. A diffusion barrier having a multi-layered structure of an Mox1Si1-x1 layer, an Mox2Siy2Nz2 layer, and an M...	08/30/2011

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Class 257/316 - With additional contacted control electrode