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Pizza Pie With Concentric Rings of Crust
A pizza mold for forming a plurality of concentric raised ridges of dough (i.e., crust) on the surface of a pizza pie.
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| Number | Title | Issue Date |
| 8063426 | Fast switching power insulated gate semiconductor device An insulated gate semiconductor device (30) includes a gate (34), a source terminal (36), a drain terminal (38) and a variable input capacitance at the gate. A ratio between the input capacitance (Cfiss) when the device is on a... | 11/22/2011 |
| 8013379 | Semiconductor variable capacitor and method of manufacturing the same The semiconductor variable capacitor includes a capacitor including an n-well 16 formed in a first region of a semiconductor substrate 10, an insulating film 18 formed over the semiconductor substrate 10 and a gate electrode 20n... | 09/06/2011 |
| 7994563 | MOS varactors with large tuning range A device is presented. The device includes a substrate with a first well of a first polarity type. The first well defines a varactor region and comprises a lower first well boundary located above a bottom surface of the substrate. A second well in the varactor regio... | 08/09/2011 |
| 7989868 | MOS varactor and fabricating method of the same A MOS varactor for use in circuits and elements of a millimeter-wave frequency band, which is capable of reducing series resistance and enhancing a Q-factor by using a plurality of island-like gates seated in a well region of a substrate and gate contacts directly o... | 08/02/2011 |
| 7960775 | Method for manufacturing a memory element comprising a resistivity-switching NiO layer and devices obtained thereof The present disclosure is related to non-volatile memory devices comprising a reversible resistivity-switching layer used for storing data. The resistivity of this layer can be varied between at least two stable resistivity states such that at least one bit can be s... | 06/14/2011 |
| 7952131 | Lateral junction varactor with large tuning range Large tuning range junction varactor includes first and second junction capacitors coupled in parallel between first and second varactor terminals. First and second plates of the capacitors are formed by three alternating doped regions in a substrate. The second and... | 05/31/2011 |
| 7902585 | Linear variable voltage diode capacitor and adaptive matching networks An integrated variable voltage diode capacitor topology applied to a circuit providing a variable voltage load for controlling variable capacitance. The topology includes a first pair of anti-series varactor diodes, wherein the diode power-law exponent n for the fir... | 03/08/2011 |
| 7884411 | Area-efficient gated diode structure and method of forming same An area-efficient gated diode includes a semiconductor layer of a first conductivity type, an active region of a second conductivity type formed in the semiconductor layer proximate an upper surface thereof, and at least one trench electrode extending vertically thr... | 02/08/2011 |
| 7821053 | Tunable capacitor Disclosed are embodiments of a transistor that operates as a capacitor and an associated method of tuning capacitance within such a capacitor. The embodiments of the capacitor comprise a field effect transistor with front and back gates above and below a semiconduct... | 10/26/2010 |
| 7804119 | Device structures with a hyper-abrupt P-N junction, methods of forming a hyper-abrupt P-N junction, and design structures for an integrated circuit Device structures with hyper-abrupt p-n junctions, methods of forming hyper-abrupt p-n junctions, and design structures for an integrated circuit containing devices structures with hyper-abrupt p-n junctions. The hyper-abrupt p-n junction is defined in a SOI substra... | 09/28/2010 |
| 7781821 | Parallel varactor capacitor with varying capacitance Provided is a parallel-varactor capacitor. The capacitor comprises a first varactor and a second varactor. The first varactor has a first capacitance which varies depending on voltages applied to a first anode and a first cathode. The second varactor has a second ca... | 08/24/2010 |
| 7728377 | Varactor design using area to perimeter ratio for improved tuning range Parallel plate tunable varactors having a bulk capacitance contribution to a total capacitance increased compared to a fringing capacitance contribution are disclosed. The contribution of the bulk capacitance to the total capacitance of an exemplary BST varactor is ... | 06/01/2010 |
| 7619273 | Varactor A varactor comprising a first layer separated from a second layer by an insulating layer, wherein the first layer is a first type of semiconductor material and the second layer is a second type of semiconductor material and the insulation layer is arranged to allow ... | 11/17/2009 |
| 7579644 | Adjustable on-chip sub-capacitor design One or more on-chip VNCAP or MIMCAP capacitors utilize a variable MOS capacitor to improve the uniform capacitance value of the capacitors. This permits the production of silicon semiconductor chips on which are mounted capacitors having capacitive values that are p... | 08/25/2009 |
| 7557400 | Semiconductor which a MOS capacitor is complemented with the capacitance of a wiring capacitor A semiconductor device has a MOS capacitor in which a drain region and a source region of a MOS structure are commonly connected, and a capacitance is formed between the commonly connected drain region/source region and a gate electrode of the MOS structure; and a w... | 07/07/2009 |
| 7547939 | Semiconductor device and circuit having multiple voltage controlled capacitors An improved solution for performing switching, routing, power limiting, and/or the like in a circuit, such as a radio frequency (RF) circuit, is provided. A semiconductor device that includes at least two electrodes, each of which forms a capacitor, such as a voltag... | 06/16/2009 |
| 7489004 | Micro-electro-mechanical variable capacitor for radio frequency applications with reduced influence of a surface roughness A micro-electro-mechanical variable capacitor has a first and a second electrode, and a dielectric region arranged on the first electrode. An intermediate electrode is arranged on the dielectric region. The first electrode is fixed and anchored to a substrate, and t... | 02/10/2009 |
| 7485916 | Dynamic control of capacitance elements in field effect structures A field effect device includes at least one segmented field plate, each of the at least one segmented field plates having a plurality of segments that each form a plate of a capacitor, wherein the field effect device is connected to an electronic element that dynami... | 02/03/2009 |
| 7459747 | Nonvolatile semiconductor memory device and manufacturing method of the same The invention realizes a smaller-sized OTP memory cell and large reduction of its manufacturing process and cost. An embedded layer (BN+) to be a lower electrode of a capacitor is formed in a drain region of a cell transistor of an OTP memory, a capacitor insulation... | 12/02/2008 |
| 7456464 | Semiconductor device including insulated gate type transistor and insulated gate type variable capacitance, and method of manufacturing the same It is an object to obtain a semiconductor device having such a structure that respective electrical characteristics of an insulated gate type transistor and an insulated gate type capacitance are not deteriorated and a method of manufacturing the semiconductor devic... | 11/25/2008 |
| 7453115 | Dielectric relaxation memory A capacitor structure having a dielectric layer disposed between two conductive electrodes, wherein the dielectric layer contains at least one charge trap site corresponding to a specific energy state. The energy states may be used to distinguish memory states for t... | 11/18/2008 |
| 7439819 | Piezoelectric-oscillator Deterioration in frequency stability with time in a conventional piezoelectric oscillator using an accumulation type MOS capacitance element is improved. A P-channel transistor type or an N-channel transistor type is used as a MOS capacitance element in a variable c... | 10/21/2008 |
| 7436015 | Driver for driving a load using a charge pump circuit A charge pump circuit includes MOSFETs and MOS capacitors formed on the same substrate. Each of the MOS capacitors has a multiplicity of first electrodes formed in one region of the substrate, insulating layers formed on/above respective substrate regions between ne... | 10/14/2008 |
| 7417277 | Semiconductor integrated circuit and method of manufacturing the same Conventional capacitors constituted of a FET incur degradation in frequency response. A semiconductor integrated circuit includes a semiconductor substrate, an N-type FET, a P-type FET, and capacitors. The N-type FET includes N-type impurity diffusion layers, a P-ty... | 08/26/2008 |
| 7388247 | High precision microelectromechanical capacitor with programmable voltage source A high precision microelectromechanical capacitor with programmable voltage source includes a monolithic MEMS device having a capacitance actuator, a trim capacitor, and a high precision, programmable voltage source. The trim capacitor has a variable capacitance val... | 06/17/2008 |
| 7388248 | Dielectric relaxation memory A capacitor structure having a dielectric layer disposed between two conductive electrodes, wherein the dielectric layer contains at least one charge trap site corresponding to a specific energy state. The energy states may be used to distinguish memory states for t... | 06/17/2008 |
| 7382014 | Semiconductor device with capacitor suppressing leak current A semiconductor device with a capacitor includes a lower electrode, a dielectric and an upper electrode on the dielectric layer. The dielectric layer including more than one polycrystalline tantalum oxide layer and more than one separation layer, wherein the polycry... | 06/03/2008 |
| 7378739 | Capacitor and light emitting display using the same A capacitor including a polysilicon layer doped with impurities to be conductive, a first dielectric layer formed on the polysilicon layer, a first conductive layer formed on the first dielectric layer, a second dielectric layer formed on the first conductive layer,... | 05/27/2008 |
| 7375376 | Semiconductor display device and method of manufacturing the same A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long, and moisture in the interlayer insulating film is prevented from esca... | 05/20/2008 |
| 7368775 | Single transistor DRAM cell with reduced current leakage and method of manufacture A single transistor planar DRAM memory cell with improved charge retention and reduced current leakage and a method for forming the same, the method including providing a semiconductor substrate; forming a gate dielectric on the semiconductor substrate; forming a pa... | 05/06/2008 |
| 7342314 | Device having a useful structure and an auxiliary structure The present invention provides a device having a useful structure which is arranged on a substrate and has a useful structure side edge. In addition, an auxiliary structure is arranged on the substrate adjacent to the useful structure, the auxiliary structure having... | 03/11/2008 |
| 7342276 | Method and apparatus utilizing monocrystalline insulator A semiconductor device, including: a semiconductor material; a conductive element; and a substantially monocrystalline insulator disposed between the semiconductor material and the conductive eleme... | 03/11/2008 |
| 7339238 | Semiconductor device including a capacitance It is an object to obtain a semiconductor device including a capacitance having a great Q-value. In an SOI substrate comprising a support substrate (165), a buried oxide film (166) and an SOI layer (171), an isolating oxide film 167 (1... | 03/04/2008 |
| 7326990 | Semiconductor device and method for fabricating the same A semiconductor device includes a first hydrogen barrier film, a capacitor device formed on the first hydrogen barrier film, and a second hydrogen barrier film formed to cover the capacitor device. The first and second hydrogen barrier films each contain at least on... | 02/05/2008 |
| 7323708 | Phase change memory devices having phase change area in porous dielectric layer A phase change memory device includes a lower electrode and a porous dielectric layer having fine pores on the lower electrode. A phase change layer is provided in the fine pores of the porous dielectric layer. An upper electrode is provided on the phase change laye... | 01/29/2008 |
| 7312487 | Three dimensional integrated circuit A three dimensional (3D) integrated circuit (IC), 3D IC chip and method of fabricating a 3D IC chip. The chip includes multiple layers of circuits, e.g., silicon insulator (SOI) CMOS IC layers, each including circuit elements. The layers may be formed in parallel an... | 12/25/2007 |
| 7307335 | Semiconductor device having MOS varactor and methods for fabricating the same A semiconductor device with having a MOS varactor and methods of fabricating the same are disclosed. The MOS varactor includes a metal gate electrode, an active semiconductor plate interposed between the metal gate electrode and the semiconductor substrate, and a ca... | 12/11/2007 |
| 7294877 | Nanotube-on-gate FET structures and applications Nanotube on gate FET structures and applications of such, including n2 crossbars requiring only 2n control lines. A non-volatile transistor device includes a source region and a drain region of a first semiconductor type of material and a channel region o... | 11/13/2007 |
| 7271436 | Flash memory devices including a pass transistor Flash memory integrated circuit devices include an integrated circuit substrate. A cell array on the integrated circuit substrate includes a plurality of cell transistors. A bit line is coupled to ones of the plurality of cell transistors and a first pass transistor... | 09/18/2007 |
| 7268646 | Temperature controlled MEMS resonator and method for controlling resonator frequency There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a temperature compensated microelectromechanical resonator as well as fabricating, manufacturing, providing and/or controlling microelectromechanical reso... | 09/11/2007 |
