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| Number | Title | Issue Date |
| 8169015 | Semiconductor device and manufacturing method therefor This semiconductor device according to the present invention includes a plurality of cylindrical lower electrodes aligned densely in a memory array region; a plate-like support which is contacted on the side surface of the cylindrical lower electrodes, and links to ... | 05/01/2012 |
| 8159016 | Capacitor of a semiconductor device A capacitor of a semiconductor device, and a method of manufacturing the capacitor of the semiconductor device, include a lower electrode layer, a dielectric layer, and an upper electrode layer, wherein the dielectric layer includes tantalum (Ta) oxide and an oxide ... | 04/17/2012 |
| 8154066 | Titanium aluminum oxide films A dielectric layer containing an insulating metal oxide film having multiple metal components and a method of fabricating such a dielectric layer produce a reliable dielectric layer for use in a variety of electronic devices. Embodiments include a titanium aluminum ... | 04/10/2012 |
| 8148765 | Resistive random access memory A resistive memory device includes a first electrode, a resistive oxidation structure and a second electrode. The resistive oxidation structure has sets of oxidation layers stacked on the first electrode. Each set is made up of a first metal oxide layer and a second... | 04/03/2012 |
| 8143660 | Method for manufacturing oxide film having high dielectric constant, capacitor having dielectric film formed using the method, and method for manufacturing the same Provided are a method for manufacturing a high k-dielectric oxide film, a capacitor having a dielectric film formed using the method, and a method for manufacturing the capacitor. A high k-dielectric oxide film is manufactured by (a) loading a semiconductor substrat... | 03/27/2012 |
| 8120087 | Ferroelectric capacitor with underlying conductive film A semiconductor device includes an insulating film provided over a semiconductor substrate, a conductive plug buried in the insulating film, an underlying conductive film which is provided on the conductive plug and on the insulating film and which has a flat upper ... | 02/21/2012 |
| 8106440 | Selective high-k dielectric film deposition for semiconductor device Embodiments of the present invention describe a method of fabricating a III-V quantum well transistor with low current leakage and high on-to-off current ratio. A hydrophobic mask having an opening is formed on a semiconductor film. The opening exposes a portion on ... | 01/31/2012 |
| 8089113 | Damascene metal-insulator-metal (MIM) device The present method of fabricating a memory device includes the steps of providing a dielectric layer, providing an opening in the dielectric layer, providing a first conductive body in the opening in the dielectric layer, providing a switching body in the opening, a... | 01/03/2012 |
| 8084804 | Capacitor with zirconium oxide and method for fabricating the same A capacitor with zirconium oxide and a method for fabricating the same are provided. The method includes: forming a storage node; forming a multi-layered dielectric structure on the storage node, the multi-layered dielectric structure including a zirconium oxide (Zr... | 12/27/2011 |
| 8067794 | Conductive layers for hafnium silicon oxynitride films Electronic apparatus and methods of forming the electronic apparatus include a HfSiON film on a substrate for use in a variety of electronic systems. The HfSiON film may be structured as one or more monolayers. Electrodes to a dielectric containing a HfSiON may be s... | 11/29/2011 |
| 8049264 | Method for producing a dielectric material on a semiconductor device and semiconductor device Method for producing a dielectric material on a semiconductor device and semiconductor device Method for producing a dielectric material on semiconductor device with an atomic layer deposition procedure, whereby an aluminum oxide nitride or a silicon oxide ni... | 11/01/2011 |
| 8022459 | Metal source and drain transistor having high dielectric constant gate insulator The invention is directed to a device for regulating the flow of electric current with high dielectric constant gate insulating layer and a source and/or drain forming a Schottky contact or Schottky-like region with a substrate and its fabrication method. In one asp... | 09/20/2011 |
| 7994562 | Memory apparatus The memory apparatus includes a memory device including a gate insulating layer formed on a silicon substrate by sequentially stacking a tunnel oxide layer, a charge trap layer, and a block oxide layer in this order, on the silicon substrate. In addition, a gate ele... | 08/09/2011 |
| 7973352 | Capacitors having composite dielectric layers containing crystallization inhibiting regions Integrated circuit capacitors have composite dielectric layers therein. These composite dielectric layers include crystallization inhibiting regions that operate to increase the overall crystallization temperature of the composite dielectric layer. An integrated cir... | 07/05/2011 |
| 7960774 | Memory devices including dielectric thin film and method of manufacturing the same A memory device including a dielectric thin film having a plurality of dielectric layers and a method of manufacturing the same are provided. The memory device includes: a bottom electrode; at least one dielectric thin film disposed on the bottom electrode and havin... | 06/14/2011 |
| 7956401 | Bi-axial texturing of high-K dielectric films to reduce leakage currents The present invention is directed to methods of fabricating a high-K dielectric films having a high degree of crystallographic alignment at grain boundaries of the film. A disclosed method involves providing a substrate and then depositing a high-K dielectric materi... | 06/07/2011 |
| 7919804 | Power distribution for high-speed integrated circuits An improved technique for power distribution for use by high speed integrated circuit devices. A mixture of high dielectric constant, Er and low Er materials are used in a dielectric layer sandwiched between the voltage and ground planes of a printed circuit board t... | 04/05/2011 |
| 7898015 | Insulating film and semiconductor device using this film An insulating film includes a first metal, oxygen, fluorine and one of a second metal or nitrogen, and satisfies {k×[X]−[F]}/2≦8.4 atomic %, wherein the fluorine amount [F], the one element amount [X], and a valence number difference k between the first and sec... | 03/01/2011 |
| 7888726 | Capacitor for semiconductor device A capacitor for a semiconductor device having a dielectric film between an upper electrode and a lower electrode is featured in that the dielectric film includes an alternately laminated film of hafnium oxide and titanium oxide at an atomic layer level. ... | 02/15/2011 |
| 7872294 | Semiconductor device having a capacitance element and method of manufacturing the same A dielectric film is formed by depositing an amorphous strontium oxide film to a thickness of one to several atomic layers on a first electrode layer, then depositing an amorphous titanium oxide film to a thickness of one to several atomic layers on the amorphous st... | 01/18/2011 |
| 7863667 | Zirconium titanium oxide films Dielectric layers having an atomic layer deposited oxide containing titanium and zirconium and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Pul... | 01/04/2011 |
| 7800153 | Capacitive electrode having semiconductor layers with an interface of separated grain boundaries The present invention relates to a structure of a capacitor, in particular using niobium pentoxide, of a semiconductor capacitor memory device. Since niobium pentoxide has a low crystallization temperature of 600° C. or less, niobium pentoxide can suppress the oxid... | 09/21/2010 |
| 7795663 | Acceptor doped barium titanate based thin film capacitors on metal foils and methods of making thereof The present invention is directed to a dielectric thin film composition comprising: (1) one or more barium/titanium-containing additives selected from (a) barium titanate, (b) any composition that can form barium titanate during firing, and (c) mixtures thereof; dis... | 09/14/2010 |
| 7791125 | Semiconductor devices having dielectric layers and methods of forming the same A method of forming a semiconductor device includes loading a semiconductor substrate into a reaction chamber, and providing metal organic precursors including hafnium and zirconium into the reaction chamber to form hafnium-zirconium oxide (HfxZr1-x | 09/07/2010 |
| 7759718 | Method manufacturing capacitor dielectric A method of forming a dielectric layer in a capacitor adapted for use in a semiconductor device is disclosed. The method includes forming a first ZrO2 layer, forming an interfacial layer using a plasma treatment on the first ZrO2 layer, and for... | 07/20/2010 |
| 7755128 | Semiconductor device containing crystallographically stabilized doped hafnium zirconium based materials A semiconductor device, such as a transistor or capacitor is provided. The device includes a substrate, a gate dielectric over the substrate, and a conductive gate dielectric film over the gate dielectric. The gate dielectric includes a doped hafnium zirconium oxide... | 07/13/2010 |
| 7745869 | Thin film capacitance element composition, high permittivity insulation film, thin film capacitance element, thin film multilayer capacitor and production method of thin film capacitance element A thin film capacitance element composition, wherein a bismuth layer compound having a c-axis oriented vertically with respect to a substrate surface is expressed by a composition formula of (Bi2O2)2+(Am−1BmO | 06/29/2010 |
| 7732852 | High-K dielectric materials and processes for manufacturing them High dielectric films of mixed transition metal oxides of titanium and tungsten, or titanium and tantalum, are formed by sequential chemical vapor deposition (CVD) of the respective nitrides and annealing in the presence of oxygen to densify and oxidize the nitrides... | 06/08/2010 |
| 7732851 | Method for fabricating a three-dimensional capacitor A capacitor and a method of fabricating the capacitor are provided herein. The capacitor can be formed by forming two or more dielectric layers and a lower electrode, wherein at least one of the two or more dielectric layers is formed before the lower electrode is f... | 06/08/2010 |
| 7728376 | Semiconductor memory device HfO2 films and ZrO2 films are currently being developed for use as capacitor dielectric films in 85 nm technology node DRAM. However, these films will be difficult to use in 65 nm technology node or later DRAM, since they have a relative dielec... | 06/01/2010 |
| 7723770 | Integrated circuit capacitors having composite dielectric layers therein containing crystallization inhibiting regions Integrated circuit capacitors have composite dielectric layers therein. These composite dielectric layers include crystallization inhibiting regions that operate to increase the overall crystallization temperature of the composite dielectric layer. An integrated cir... | 05/25/2010 |
| 7723771 | Zirconium oxide based capacitor and process to manufacture the same A capacitor structure comprises a first and a second electrode of conducting material. Between the first and second electrodes, an atomic layer deposited dielectric film is disposed, which comprises zirconium oxide and a dopant oxide. Herein, the dopant comprises an... | 05/25/2010 |
| 7700989 | Hafnium titanium oxide films Embodiments of a dielectric layer containing a hafnium titanium oxide film structured as one or more monolayers include the dielectric layer disposed in an integrated circuit. Embodiments of methods of fabricating such a dielectric layer provide a dielectric layer f... | 04/20/2010 |
| 7700988 | Metal-insulator-metal capacitor A metal-insulator-metal (MIM) capacitor having a top electrode, a bottom electrode and a capacitor dielectric layer is provided. The top electrode is located over the bottom electrode and the capacitor dielectric layer is disposed between the top and the bottom elec... | 04/20/2010 |
| 7683418 | High-temperature stable gate structure with metallic electrode The present invention provides a method for depositing a dielectric stack comprising forming a dielectric layer atop a substrate, the dielectric layer comprising at least oxygen and silicon atoms; forming a layer of metal atoms atop the dielectric layer within a non... | 03/23/2010 |
| 7679124 | Analog capacitor and method of manufacturing the same An analog capacitor capable of reducing the influence of an applied voltage on a capacitance and a method of manufacturing the analog capacitor are provided. The analog capacitor includes a lower electrode which is formed on a substrate, a multi-layered dielectric l... | 03/16/2010 |
| 7638831 | Molecular memory and method for making same A molecular memory including a substrate made of silicon; a set of condensers, each condenser including two conductive layers constituting armatures of the condensers and between which is placed a dielectric layer; and a connector to provide electric contacts with e... | 12/29/2009 |
| 7619272 | Bi-axial texturing of high-K dielectric films to reduce leakage currents The present invention is directed to a method of fabricating a high-K dielectric films having a high degree of crystallographic alignment at grain boundaries of the film. A disclosed method involves providing a substrate and then depositing a material used in formin... | 11/17/2009 |
| 7602003 | Semiconductor device structure for reducing hot carrier effect of MOS transistor A semiconductor device structure is described, including a MOS transistor, a silicon-rich silicon nitride layer having a refractive index of about 2.00-2.30, and a dielectric layer. The silicon-rich silicon nitride layer is disposed between the MOS transistor and th... | 10/13/2009 |
| 7544987 | High-k dielectric materials and processes for manufacturing them High dielectric films of mixed transition metal oxides of titanium and tungsten, or titanium and tantalum, are formed by sequential chemical vapor deposition (CVD) of the respective nitrides and annealing in the presence of oxygen to densify and oxidize the nitrides... | 06/09/2009 |
