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| Number | Title | Issue Date |
| 7977668 | Multilayer structure with zirconium-oxide tunnel barriers and applications of same A multilayer structure with zirconium-oxide tunnel barriers. In one embodiment, the multilayer structure includes a first niobium (Nb) layer, a second niobium (Nb) layer, and a plurality of zirconium-oxide tunnel barriers sandwiched between the first niobium (Nb) la... | 07/12/2011 |
| 7932515 | Quantum processor Multiple substrates that carry quantum devices are coupled to provide quantum mechanical communicators therebetween, for example, using superconducting interconnects, vias, solder and/or magnetic flux. Such may advantageously reduce a footprint of a device such as a... | 04/26/2011 |
| 7932514 | Microwave readout for flux-biased qubits A method for determining whether a quantum system comprising a superconducting qubit is occupying a first basis state or a second basis state once a measurement is performed is provided. The method, comprising: applying a signal having a frequency through a transmis... | 04/26/2011 |
| 7791065 | Ultrasensitive optical detector having a large temporal resolution and using a waveguide, and methods for producing said detector An ultrasensitive optical detector with high resolution in time, using a waveguide, and a processes for manufacturing this detector. The detector is configured to detect at least one photon and includes a dielectric substrate and at least one detection element on th... | 09/07/2010 |
| 7521708 | High sensitivity ring-SQUID magnetic sensor More sensitive (especially due to reduced interference of flux noise) than a conventional SQUID, an inventive SQUID's major component is a hollow cylindric structure comprising one or more annular Josephson junctions. Each annular Josephson junction is defined by tw... | 04/21/2009 |
| 7411187 | Ion trap in a semiconductor chip A micrometer-scale ion trap, fabricated on a monolithic chip using semiconductor micro-electromechanical systems (MEMS) technology. A single 111Cd+ ion is confined, laser cooled, and the heating measured in an integrated radiofrequency trap etched from a doped galli... | 08/12/2008 |
| 7364923 | Dressed qubits A quantum computing method comprising constructing a dressing transformation V between a physical Hamiltonian H and an ideal Hamiltonian HID. The physical Hamiltonian H describes a physical quantum computer that comprises a plurality of qubits, including ... | 04/29/2008 |
| 7335909 | Superconducting phase-charge qubits A quantum computing structure comprising a superconducting phase-charge qubit, wherein the superconducting phase-charge qubit comprises a superconducting loop with at least one Josephson junction. The quantum computing structure also comprises a first mechanism for ... | 02/26/2008 |
| 7336515 | Method of manipulating a quantum system comprising a magnetic moment A method for manipulating a quantum system comprises at least one mobile charge carrier with a magnetic moment. The method comprises the steps or acts of applying magnetic field to the charge carrier. The magnetic is spatially non-homogeneous. The method also compri... | 02/26/2008 |
| 7332738 | Quantum phase-charge coupled device A method for reading out the state of a mesoscopic phase device. In the method the mesoscopic phase device is coherently coupled to a mesoscopic charge device using a phase shift device and the quantum state of the mesoscopic charge device is measured. A method for ... | 02/19/2008 |
| 7327022 | Assembly, contact and coupling interconnection for optoelectronics A novel micro optical system as a platform technology for electrical and optical interconnections, thermal and mechanical assembly and integration of electronic, optoelectronic, passive and active components. This platform provides optical coupling and chip-to-chip ... | 02/05/2008 |
| 7323711 | High-temperature superconductive device A high-temperature superconductive device is disclosed, including a ramp-edge junction. The ramp-edge junction includes a first electrode layer (5) that defines the size of the ramp-edge junction and a second electrode layer (6). The width of the secon... | 01/29/2008 |
| 7320732 | Method for preparing atomistically straight boundary junctions in high temperature superconducting oxides A method for preparing film oxides deposited on a substrate with a resulting grain boundary junction that is atomistically straight. A bicrystal substrate having a straight grain boundary is prepared as a template. The Miller indices h1, k1, h2, k2 of the two grains... | 01/22/2008 |
| 7312182 | Rare earth metal compounds for use in high critical temperature thin film super-conductors Rare earth metal containing compounds of the formula Sr2LuSbO6 and Sr2LaSbO6 have been prepared as high critical temperature thin film superconductor structures, and can be used in other ferroelectrics, pyroelectrics, piez... | 12/25/2007 |
| 7307275 | Encoding and error suppression for superconducting quantum computers The present invention involves a quantum computing structure, comprising: one or more logical qubits, which is encoded into a plurality of superconducting qubits; and each of the logical qubits comprises at least one operating qubit and at least one ancilla qubit. A... | 12/11/2007 |
| 7268576 | Superconducting qubit with a plurality of capacitive couplings A first qubit having a superconducting loop interrupted by a plurality of Josephson junctions is provided. Each junction interrupts a different portion of the superconducting loop and each different adjacent pair of junctions in the plurality of Josephson junctions ... | 09/11/2007 |
| 7253654 | Superconducting qubits having a plurality of capacitive couplings A first qubit having a superconducting loop interrupted by a plurality of Josephson junctions is provided. Each junction interrupts a different portion of the superconducting loop and each different adjacent pair of junctions in the plurality of Josephson junctions ... | 08/07/2007 |
| 7253038 | Semiconductor device and method for manufacturing the same It is a problem to realize, by a reduced number of processes than that of the conventional, a reliable active-matrix liquid crystal display device having a high opening ratio for high-definition display. The present invention is characterized by: forming a gate elec... | 08/07/2007 |
| 7253701 | Multiplexed amplifier Multiple sensor signals are used to modulate an equal number of frequency-spaced carrier signals in a directional parametric upconverting amplifier. Basically, the carrier signals are separated in a cascaded or parallel configuration of narrow frequency passbands, w... | 08/07/2007 |
| 7250624 | Quasi-particle interferometry for logical gates A quantum computer can only function stably if it can execute gates with extreme accuracy. “Topological protection” is a road to such accuracies. Quasi-particle interferometry is a tool for constructing topologically protected gates. Assuming the corrections of ... | 07/31/2007 |
| 7247876 | Three dimensional programmable device and method for fabricating the same A three-dimensional memory device having polycrystalline silicon diode isolation elements for phase change memory cells and method for fabricating the same. The memory device includes a plurality of stacked memory cells to form a three-dimensional memory array. The ... | 07/24/2007 |
| 7230266 | Conditional Rabi oscillation readout for quantum computing A method for determining whether a first state of a quantum system is occupied is provided. A driving signal is applied to the system at a frequency corresponding to an energy level separation between a first and second state of the system. The system produces a rea... | 06/12/2007 |
| 7217948 | Semiconductor substrate The present invention relates to a preferred semiconductor substrate for the production of devices. The semiconductor substrate is comprised of GaAs. Then, a plurality of quantum rings, which are composed of GaSb and have a substantially elliptical shape with an asp... | 05/15/2007 |
| 7219017 | Quantum information processing elements and quantum information processing platforms using such elements The invention in various embodiments is directed to quantum information processing elements and quantum information processing platforms employing such elements. In one aspect, the quantum information processing elements are formed with self-assembling protein molec... | 05/15/2007 |
| 7219018 | Quantum information processing elements and quantum information processing platforms using such elements The invention in various embodiments is directed to quantum information processing elements and quantum information processing platforms employing such elements. In one aspect, the quantum information processing elements are formed with self-assembling purified Clat... | 05/15/2007 |
| 7216038 | Quantum information processing elements and quantum information processing platforms using such elements The invention in various embodiments is directed to quantum information processing elements and quantum information processing platforms employing such elements. In one aspect, the quantum information processing elements are formed with self-assembling protein molec... | 05/08/2007 |
| 7192892 | Atomic layer deposited dielectric layers An atomic layer deposited dielectric layer and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Depositing a hafnium metal layer on a substrate sur... | 03/20/2007 |
| 7135701 | Adiabatic quantum computation with superconducting qubits A method for computing using a quantum system comprising a plurality of superconducting qubits is provided. Quantum system can be in any one of at least two configurations including (i) an initialization Hamiltonian H0 and (ii) a problem Hamiltonian H | 11/14/2006 |
| 7135369 | Atomic layer deposited ZrAlO dielectric layers including ZrAlO An atomic layer deposited ZrAlxOy dielectric layer and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Pulsing a zirconium-c... | 11/14/2006 |
| 7112952 | Inspection system, inspection method, and method for manufacturing semiconductor device The present invention provides an inspection system of ID chips that can supply a signal or power supply voltage to an ID chip without contact, and can increase throughput of an inspection process and an inspection method using the inspection system. The inspection ... | 09/26/2006 |
| 7109593 | Systems and methods for performing quantum computations Apparatus and methods for performing quantum computations are disclosed. Such apparatus and methods may include identifying a first quantum state of a lattice having a system of quasi-particles disposed thereon, moving the quasi-particles within the lattice accordin... | 09/19/2006 |
| 7109518 | Electronic element operable at room temperature using super-dielectric phenomenon This invention relates to an electronic element having an electron function which acts even at room temperature using a super dielectric effect. The element has a crystalline electron system, and uses a perovskite crystal in the ground state of a “macroscopic quan... | 09/19/2006 |
| 7110297 | Semiconductor storage device and mobile electronic apparatus A semiconductor storage device is provided, which comprises a memory array comprising memory elements. Each memory element comprises a gate electrode, a channel region, first and second diffusion regions, and first and second memory function sections provided an opp... | 09/19/2006 |
| 7105365 | Method of manufacturing a semiconductor device The present invention supplies a manufacturing method of a semiconductor device, which includes a non-contact inspection process capable of confirming if a circuit or circuit element formed on an array substrate is normally performed and can decrease a manufacturing... | 09/12/2006 |
| 7105853 | Self-aligned junction passivation for superconductor integrated circuit A superconductor integrated circuit (1) includes an anodization ring (35) disposed around a perimeter of a tunnel junction region (27) for preventing a short-circuit between an outside contact (41) and the base electrode layer (18)... | 09/12/2006 |
| 7105857 | Nitride semiconductor device comprising bonded substrate and fabrication method of the same A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers 3 to 5, an active layer 6 | 09/12/2006 |
| 7105852 | High speed electron tunneling devices A detector includes a voltage source for providing a bias voltage and first and second non-insulating layers, which are spaced apart such that the bias voltage can be applied therebetween and form an antenna for receiving electromagnetic radiation and directing it t... | 09/12/2006 |
| 7103079 | Pulsed quantum dot laser system with low jitter A circuit for generating a clock or sampling signal, the circuit including: a semiconductor quantum dot laser element including a region of quantum dots, wherein the region of quantum dots is characterized by an emission distribution having a half-width of at least ... | 09/05/2006 |
| 7091515 | High-temperature superconducting device and manufacturing method thereof At least two ramp-edge-structure Josephson junctions having different critical current densities to one another are provided on a substrate. ... | 08/15/2006 |
| 7084078 | Atomic layer deposited lanthanide doped TiOx dielectric films A dielectric film containing atomic layer deposited lanthanide doped TiOx and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. The lantha... | 08/01/2006 |
