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| Number | Title | Issue Date |
| 4794563 | Semiconductor memory device having a high capacitance storage capacitor This invention provides a semiconductor memory device for an integrated circuit comprising a semiconductor substrate of a first conductivity type, a field insulation layer on the semiconductor substrate, and a switch. This switch includes a gate insulatio... | 12/27/1988 |
| 4786954 | Dynamic ram cell with trench surrounded switching element A semiconductor memory device has a semiconductor substrate of one conductivity type in which a plurality of memory cells are formed, each of the plurality of memory cells including at least one capacitor and having a trench which is formed from one major... | 11/22/1988 |
| 4685197 | Fabricating a stacked capacitor The present invention provides a structure and method for fabricating that structure which provides increased capacitance over the prior art while occupying a minimum of surface area of the integrated circuit. The present invention accomplishes this by in... | 08/11/1987 |
| 4646118 | Semiconductor memory device A semiconductor memory device, such as a MOS dynamic RAM device, having memory cells each comprising a transfer gate transistor and a capacitor. The capacitor is a so-called groove-type capacitor and has a conductive layer formed on an insulation film att... | 02/24/1987 |
| 4329704 | MOS Random access memory with buried storage capacitor A one transistor, one capacitance type dynamic MOS.RAM is provided with a buried storage capacitor and a planar transfer electrode. The MOS.RAM is, therefore, characterized by a small size of the memory cells and a simple production process. One process f... | 05/11/1982 |
| 4163243 | One-transistor memory cell with enhanced capacitance A one-transistor memory cell is provided in which the depletion-layer capacitance of an MOS capacitor is increased by locally enhancing the substrate dopant concentration. In preferred embodiments the substrate may also be doped adjacent to the substrate-... | 07/31/1979 |
