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| Number | Title | Issue Date |
| 6878602 | Dielectric cure for reducing oxygen vacancies A unique electrochemical process fills oxygen vacancies in dielectrics while reducing oxidation of nearby electrodes and conductors. Preferably, an electromagnetic field or bias is applied to a dielectric. The bias causes oxygen vacancies in the dielectric to migrat... | 04/12/2005 |
| 6875652 | Method for producing ferroelectric capacitors and integrated semiconductor memory chips The invention relates to a method for producing ferroelectric capacitors that are structured using the stack principle and that are used in integrated semiconductor memory chips. The individual capacitor modules have an oxygen barrier between a lower capacitor elect... | 04/05/2005 |
| 6876026 | Memory cell, wafer, semiconductor component with memory cell having insulation collars and method for fabricating an insulating collar for a memory cell The invention relates to a DRAM memory cell having a trench filled with conductive material connected to a selection transistor by a connection having a vertical insulation collar arranged perpendicularly to a layer sequence of the memory cell. The vertical insulati... | 04/05/2005 |
| 6872998 | Ferroelectric memory device A memory cell transistor using a word line WL as the gate thereof is provided in an active region OD, and a ferroelectric capacitor, including bottom electrode, ferroelectric film and top electrode TE, is formed on a field oxide film. A first interconnection layer i... | 03/29/2005 |
| 6870210 | Dual-sided capacitor A dual-sided HSG capacitor and a method of fabrication are disclosed. A thin native oxide layer is formed between a doped polycrystalline layer and a layer of hemispherical grained polysilicon (HSG) as part of a dual-sided lower capacitor electrode. Prior to the die... | 03/22/2005 |
| 6867451 | Semiconductor device and method for manufacturing the same A semiconductor device comprises a lower electrode shaped as a convex formed on a semiconductor substrate having crystals, a grain boundary between adjacent crystals being perpendicular to a side of the lower electrode, a capacitor insulating film covering the lower... | 03/15/2005 |
| 6867448 | Electro-mechanically polished structure A method of patterning a metal surface by electro-mechanical polishing is disclosed. A metal surface is placed in fluid communication with an abrasive surface of a pad. The two surfaces are moved relative to each other, in acidic fluid which contains abrasive partic... | 03/15/2005 |
| 6867447 | Ferroelectric memory cell and methods for fabricating the same Semiconductor devices and ferroelectric memory cells therefor are provided, where the cells include a ferroelectric capacitor with one or more corners, as well as a transistor. Conductive bitline structures are located near the corners of ferroelectric cell capacito... | 03/15/2005 |
| 6864546 | Semiconductor device having memory cell portion and manufacturing method thereof A semiconductor device having a memory cell portion and a peripheral circuit portion is provided which achieves suppression of reduction of punch-through margin of transistors in the peripheral circuit portion and offers ensured short margin and enhanced current dri... | 03/08/2005 |
| 6864527 | Capacitor having tantalum oxynitride film and method for making same A capacitor has a tantalum oxynitride film. One method for making the film comprises forming a bottom plate electrode and then forming a tantalum oxide film on the bottom plate electrode. Nitrogen is introduced to form a tantalum oxynitride film. A top plate electro... | 03/08/2005 |
| 6864526 | Capacitor with via plugs forming first and second electrodes in a multilayer wiring structure of a semiconductor device A capacitor which can be manufactured easily without an addition of photo masks and manufacturing processes is obtained. The capacitor has a plural via plugs (1a to 1c) which function as a first electrode and a plural via plugs ( | 03/08/2005 |
| 6861695 | High-k dielectric materials and processes for manufacturing them High dielectric films of mixed transition metal oxides of titanium and tungsten, or titanium and tantalum, are formed by sequential chemical vapor deposition (CVD) of the respective nitrides and annealing in the presence of oxygen to densify and oxidize the nitrides... | 03/01/2005 |
| 6861690 | Lower electrode contact structure and method of forming the same Lower electrode contact structures and methods of forming the same provide an interface having a large surface area between a lower electrode and the underlying layers. The lower electrode is in contact with a contact plug and an insulation layer in which the contac... | 03/01/2005 |
| 6861330 | Structures and methods for enhancing capacitors in integrated circuits Systems, devices, structures, and methods are described that inhibit dielectric degradation in the presence of contaminants. An enhanced capacitor in a dynamic random access memory cell is discussed. The enhanced capacitor includes a first electrode, a dielectric co... | 03/01/2005 |
| 6858890 | Ferroelectric memory integrated circuit with improved reliability An IC with memory cells arranged in a chained architecture is disclosed. The top local interconnect between the top capacitor electrodes and active area is achieved by using a strap. The use of a strap eliminates the need for additional metal layer which reduces man... | 02/22/2005 |
| 6853025 | Trench capacitor with buried strap A trench capacitor with improved strap is disclosed. The strap is located above the top surface of the capacitor. The top surface of the trench capacitor which is formed by the top surfaces of the collar and storage plate, is planar. By locating the strap on a plana... | 02/08/2005 |
| 6849494 | Dielectric cure for reducing oxygen vacancies A unique electrochemical process fills oxygen vacancies in dielectrics while reducing oxidation of nearby electrodes and conductors. Preferably, an electromagnetic field or bias is applied to a dielectric. The bias causes oxygen vacancies in the dielectric to migrat... | 02/01/2005 |
| 6849890 | Semiconductor device and manufacturing method thereof A semiconductor device comprises a semiconductor substrate having first conductivity type, a trench capacitor, provided in the substrate, having a charge accumulation region, a gate electrode provided on the substrate via a gate insulating film, a gate side wall ins... | 02/01/2005 |
| 6849894 | Semiconductor device with transistor and capacitor and its manufacture method On a semiconductor substrate, a transistor and a capacitor electrically connected to the transistor are formed, the capacitor having two electrodes made of metal and a capacitor dielectric layer between the two electrodes made of oxide dielectric material. A tempora... | 02/01/2005 |
| 6847077 | Capacitor for a semiconductor device and method for fabrication therefor A semiconductor device having a capacitor integrated in a damascene structure. In one embodiment, the capacitor is formed entirely within a metallization layer of a damascene structure, having therein a semiconductor device component. Preferably, the capacitor is fo... | 01/25/2005 |
| 6847072 | Low switching field magnetic element A magnetic element which can switch states using a relatively lower magnetic field. The magnetic element comprises first and second magnetic layers separated by an intermediate layer. The magnetization of the first magnetic layer is fixed in a first direction parall... | 01/25/2005 |
| 6841820 | Information storage apparatus and manufacturing method therefor The invention achieves the fine processing of an information writing device, which includes a multilayered element obtained by stacking ferromagnetic/semiconductor/ferromagnetic layers, without increasing the resistivity and power consumption of the device and lower... | 01/11/2005 |
| 6841443 | Method for fabricating a deep trench capacitor for dynamic memory cells A method for fabricating a deep trench capacitor for dynamic memory cells in which a trench is etched into the depth of a semiconductor substrate, and wherein the interior of the trench is provided with a doping and a dielectric and is filled with a conductive mater... | 01/11/2005 |
| 6838722 | Structures of and methods of fabricating trench-gated MIS devices In a trench-gated MIS device contact is made to the gate within the trench, thereby eliminating the need to have the gate material, typically polysilicon, extend outside of the trench. This avoids the problem of stress at the upper corners of the trench. Contact bet... | 01/04/2005 |
| 6838331 | Method and system for dynamically operating memory in a power-saving error correction mode A scrubbing controller used with a DRAM stores data in an error correcting code format. The system then uses a memory control state machine and associated timer to periodically cause the DRAM to read the error correcting codes. An ECC generator/checker in the scrubb... | 01/04/2005 |
| 6835976 | Semiconductor device and its manufacture A method of manufacturing a semiconductor device has the steps of: (a) forming a lower electrode made of rare metal above a semiconductor substrate; (b) depositing a capacitor dielectric film made of a high dielectric material or ferroelectric oxide on the lower ele... | 12/28/2004 |
| 6833605 | Method of making a memory cell capacitor with Ta2O5 dielectric The present invention provides a method for making an integrated circuit capacitor having a Ta2O5 dielectric which includes a high-temperature nitrogen anneal and a low-temperature ozone anneal of the dielectric. ... | 12/21/2004 |
| 6833579 | Conductive container structures having a dielectric cap Container structures for use in integrated circuits and methods of their manufacture. The container structures have a dielectric cap on the top of a conductive container to reduce the risk of container-to-container shorting by insulating against bridging of conducti... | 12/21/2004 |
| 6833573 | Curvature anisotropy in magnetic bits for a magnetic random access memory A magnetic memory cell that uses a curved magnetic region to create magnetic anisotropy is provided by the present invention. The magnetic memory cell is created from a free magnetic layer, a barrier layer and a reference magnetic layer. The magnetic layers are cons... | 12/21/2004 |
| 6833572 | Electrode materials with improved hydrogen degradation resistance An electrode for use in a ferroelectric device includes a bottom electrode; a ferroelectric layer; and a top electrode formed on the ferroelectric layer and formed of a combination of metals, including a first metal take from the group of metals consisting of platin... | 12/21/2004 |
| 6832420 | Method of manufacturing a thin film capacitor array An electronic device has a plurality of capacitors in an ultra-small integrated package. The device has a plurality of terminal structures on one terminal side of the package to permit inverted mounting to a printed circuit board. The terminals are widely spaced, wi... | 12/21/2004 |
| 6831321 | Semiconductor device with a capacitor electrode isolation film formed from the same layer as a capacitor electrode A semiconductor device that can prevent short-circuit occurring between capacitor electrodes and a method of manufacturing the semiconductor device are obtained. A semiconductor includes two capacitor electrodes formed spaced from each other and including conductive... | 12/14/2004 |
| 6831319 | Cell nitride nucleation on insulative layers and reduced corner leakage of container capacitors Methods of forming a uniform cell nitride dielectric layer over varying substrate materials such as an insulation material and a conductive or semiconductive material, methods of forming capacitors having a uniform nitride dielectric layer deposited onto varying sub... | 12/14/2004 |
| 6831314 | Magnetoresistive effect element and magnetic memory device A magnetoresistive effect element (1) has an arrangement in which a pair of ferromagnetic material layers (magnetization fixed layer (5) and magnetization free layer (7)) is opposed to each other through an intermediate layer (6) to obtai... | 12/14/2004 |
| 6828617 | Method for fabricating a capacitor of a semiconductor device and a capacitor made thereby A method for fabricating a capacitor of a semiconductor device, and a capacitor made in accordance with the method, wherein the method includes forming a plate electrode polysilicon layer on a semiconductor substrate having a cell array region and a core/peripheral ... | 12/07/2004 |
| 6828616 | Integrated circuit devices that utilize doped Poly-Si1−xGex conductive plugs as interconnects The present invention provides an integrated circuit device that include a semiconductor substrate having a semiconductor region of first conductivity type therein extending adjacent the surface of the substrate. The device further includes an electrically insulatin... | 12/07/2004 |
| 6828611 | Integrated circuit ferroelectric memory devices including plate lines directly on ferroelectric capacitors Integrated circuit ferroelectric memory devices are provided that include an integrated circuit transistor. The memory device further includes a ferroelectric capacitor on the integrated circuit transistor. The ferroelectric capacitor includes a first electrode adja... | 12/07/2004 |
| 6828586 | Semiconductor device and method of manufacturing the same A semiconductor device with high reliability and operation performance is manufactured without increasing the number of manufacture steps. A gale electrode has a laminate structure. A TFT having a low concentration impurity region that overlaps the gate electrode or... | 12/07/2004 |
| 6825518 | Capacitor in semiconductor device and method for fabricating the same A capacitor in a semiconductor device and a method for fabricating the same is disclosed. Disclosed the method for fabricating the capacitor in a semiconductor device comprises the steps of: forming a lower electrode made of doped silicon materials on a semiconducto... | 11/30/2004 |
| 6822277 | Semiconductor device and method for manufacturing the same The present invention is characterized by including an electrode formed on surface of a semiconductor substrate, wherein said electrode includes a barrier layer consisting of amorphous or microcrystal expressed by the following expression: M1xM2... | 11/23/2004 |
